{"id":"https://openalex.org/W2014258017","doi":"https://doi.org/10.1049/el:19950179","title":"Low-threshold pulsed operation of long-wavelengthlasers on Sifabricated by direct bonding","display_name":"Low-threshold pulsed operation of long-wavelengthlasers on Sifabricated by direct bonding","publication_year":1995,"publication_date":"1995-02-16","ids":{"openalex":"https://openalex.org/W2014258017","doi":"https://doi.org/10.1049/el:19950179","mag":"2014258017"},"language":"en","primary_location":{"id":"doi:10.1049/el:19950179","doi":"https://doi.org/10.1049/el:19950179","is_oa":false,"landing_page_url":"https://doi.org/10.1049/el:19950179","pdf_url":null,"source":{"id":"https://openalex.org/S149016011","display_name":"Electronics Letters","issn_l":"0013-5194","issn":["0013-5194","1350-911X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1","norway-1","oarl","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electronics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100651122","display_name":"Koichi Mori","orcid":"https://orcid.org/0000-0002-6210-6850","observed_orcids":["https://orcid.org/0000-0002-6210-6850"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Mori","raw_affiliation_strings":["Optoelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, Tsukuba, Ibaraki, 305, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Optoelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, Tsukuba, Ibaraki, 305, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111569901","display_name":"Keiichi Tokutome","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Tokutome","raw_affiliation_strings":["Optoelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, Tsukuba, Ibaraki, 305, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Optoelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, Tsukuba, Ibaraki, 305, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111533102","display_name":"S. Sugou","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Sugou","raw_affiliation_strings":["Optoelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, Tsukuba, Ibaraki, 305, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Optoelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, Tsukuba, Ibaraki, 305, Japan","institution_ids":["https://openalex.org/I118347220"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I118347220"],"apc_list":{"value":2590,"currency":"USD","value_usd":2590},"apc_paid":null,"fwci":4.6305,"has_fulltext":false,"cited_by_count":19,"citation_normalized_percentile":{"value":0.94732157,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"31","issue":"4","first_page":"284","last_page":"285"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9887999892234802,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9887999892234802,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.006000000052154064,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.002899999963119626,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/direct-bonding","display_name":"direct bonding","score":0.5669999718666077},{"id":"https://openalex.org/keywords/silicon-substrate","display_name":"silicon substrate","score":0.796999990940094},{"id":"https://openalex.org/keywords/low-threshold-lasers","display_name":"low-threshold lasers","score":0.699999988079071},{"id":"https://openalex.org/keywords/pulsed-operation","display_name":"pulsed operation","score":0.8450000286102295},{"id":"https://openalex.org/keywords/room-temperature-operation","display_name":"room-temperature operation","score":0.824999988079071},{"id":"https://openalex.org/keywords/threshold-current-density","display_name":"threshold current density","score":0.7820000052452087},{"id":"https://openalex.org/keywords/1550-nm-laser","display_name":"1.55 \u03bcm lasers","score":0.871999979019165},{"id":"https://openalex.org/keywords/inp-buffer-layer","display_name":"InP buffer layer","score":0.6129999756813049}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8193208575248718},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.7873353958129883},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7648818492889404},{"id":"https://openalex.org/C6260449","wikidata":"https://www.wikidata.org/wiki/Q41364","display_name":"Wavelength","level":2,"score":0.5323510766029358},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.49684956669807434},{"id":"https://openalex.org/C207740977","wikidata":"https://www.wikidata.org/wiki/Q234072","display_name":"Current density","level":2,"score":0.47447139024734497},{"id":"https://openalex.org/C121477167","wikidata":"https://www.wikidata.org/wiki/Q17154002","display_name":"Semiconductor laser theory","level":3,"score":0.45511749386787415},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.33083468675613403},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.1473311185836792},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1049/el:19950179","doi":"https://doi.org/10.1049/el:19950179","is_oa":false,"landing_page_url":"https://doi.org/10.1049/el:19950179","pdf_url":null,"source":{"id":"https://openalex.org/S149016011","display_name":"Electronics Letters","issn_l":"0013-5194","issn":["0013-5194","1350-911X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1","norway-1","oarl","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electronics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1978520376","https://openalex.org/W2029308890","https://openalex.org/W2050160558","https://openalex.org/W2081215805","https://openalex.org/W2090326785","https://openalex.org/W2170056580"],"related_works":["https://openalex.org/W3199172976","https://openalex.org/W1986889299","https://openalex.org/W2943703392","https://openalex.org/W2100566650","https://openalex.org/W2153393285","https://openalex.org/W2538658349","https://openalex.org/W1972337614","https://openalex.org/W2900695457","https://openalex.org/W1963667806","https://openalex.org/W2031870776"],"abstract_inverted_index":{"Low-threshold":[0],"room-temperature":[1],"pulsed":[2],"operation":[3],"of":[4,46],"InGaAs/InGaAsP":[5],"multiquantum-well":[6],"(MQW)":[7],"lasers":[8,40,64],"(\u03bb":[9],"\u2243":[10],"1.55":[11],"\u00b5m)":[12],"on":[13,24,65],"Si":[14,32],"substrates":[15,33],"is":[16,58],"demonstrated.":[17],"These":[18],"laser":[19],"structures":[20],"were":[21],"first":[22],"grown":[23],"InP":[25,66],"substrates,":[26],"then":[27],"bonded":[28],"at":[29],"700\u00b0C":[30],"onto":[31],"with":[34],"buffer":[35],"layers.":[36],"The":[37],"mesa-stripe":[38],"broad-area":[39],"have":[41],"a":[42],"threshold":[43],"current":[44],"density":[45],"1.7":[47],"kA/cm2":[48],"(50":[49],"\u00b5m":[50,54],"mesa":[51],"width,":[52],"330":[53],"cavity":[55],"length),":[56],"which":[57],"comparable":[59],"to":[60],"the":[61],"value":[62],"for":[63],"substrates.":[67]},"counts_by_year":[{"year":2019,"cited_by_count":1}],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}