{"id":"https://openalex.org/W2014077853","doi":"https://doi.org/10.1109/iirw.2014.7049513","title":"Application of compact HCI model to prediction of process effect in 28FDSOI technology","display_name":"Application of compact HCI model to prediction of process effect in 28FDSOI technology","publication_year":2014,"publication_date":"2014-10-01","ids":{"openalex":"https://openalex.org/W2014077853","doi":"https://doi.org/10.1109/iirw.2014.7049513","mag":"2014077853"},"language":"en","primary_location":{"id":"doi:10.1109/iirw.2014.7049513","doi":"https://doi.org/10.1109/iirw.2014.7049513","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iirw.2014.7049513","pdf_url":null,"source":{"id":"https://openalex.org/S4210230073","display_name":"IEEE International Integrated Reliability Workshop final report","issn_l":"1930-8841","issn":["1930-8841","2374-8036"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5002633964","display_name":"Wafa Arfaoui","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]},{"id":"https://openalex.org/I4210112016","display_name":"Institut des Mat\u00e9riaux, de Micro\u00e9lectronique et des Nanosciences de Provence","ror":"https://ror.org/0238zyh04","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I143002897","https://openalex.org/I21491767","https://openalex.org/I4210098836","https://openalex.org/I4210112016","https://openalex.org/I4387153205"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"W. Arfaoui","raw_affiliation_strings":["ISEN, IM2NP UMR, Toulon, France","STMicroelectronics, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ISEN, IM2NP UMR, Toulon, France","institution_ids":["https://openalex.org/I4210112016"]},{"raw_affiliation_string":"STMicroelectronics, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087103079","display_name":"X. Federspiel","orcid":"https://orcid.org/0009-0000-1171-1578","observed_orcids":["https://orcid.org/0009-0000-1171-1578"]},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"X. Federspiel","raw_affiliation_strings":["STMicroelectronics, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5104439073","display_name":"A. Bravaix","orcid":"https://orcid.org/0000-0002-2308-3537","observed_orcids":["https://orcid.org/0000-0002-2308-3537"]},"institutions":[{"id":"https://openalex.org/I4210112016","display_name":"Institut des Mat\u00e9riaux, de Micro\u00e9lectronique et des Nanosciences de Provence","ror":"https://ror.org/0238zyh04","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I143002897","https://openalex.org/I21491767","https://openalex.org/I4210098836","https://openalex.org/I4210112016","https://openalex.org/I4387153205"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"A. Bravaix","raw_affiliation_strings":["ISEN, IM2NP UMR, Toulon, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ISEN, IM2NP UMR, Toulon, France","institution_ids":["https://openalex.org/I4210112016"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055085547","display_name":"Pascal Mora","orcid":"https://orcid.org/0000-0001-5047-2821","observed_orcids":["https://orcid.org/0000-0001-5047-2821"]},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"P. Mora","raw_affiliation_strings":["STMicroelectronics, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022057098","display_name":"A. Cros","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"A. Cros","raw_affiliation_strings":["STMicroelectronics, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5113211895","display_name":"D. Roy","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"D. Roy","raw_affiliation_strings":["STMicroelectronics, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, France","institution_ids":["https://openalex.org/I4210104693"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.6058,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.80652577,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"69","last_page":"72"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.6815999746322632,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.6815999746322632,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.11900000274181366,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.033399999141693115,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/hot-carrier-degradation","display_name":"hot carrier degradation","score":0.8410000205039978},{"id":"https://openalex.org/keywords/fd-soi-mosfet","display_name":"FD-SOI MOSFET","score":0.8479999899864197},{"id":"https://openalex.org/keywords/process-variation","display_name":"process variation","score":0.7979999780654907},{"id":"https://openalex.org/keywords/channel-length-variation","display_name":"channel length variation","score":0.7710000276565552},{"id":"https://openalex.org/keywords/source-drain-resistance","display_name":"source/drain resistance","score":0.968999981880188},{"id":"https://openalex.org/keywords/oxide-thickness","display_name":"oxide thickness","score":0.7710000276565552},{"id":"https://openalex.org/keywords/lightly-doped-drain","display_name":"lightly doped drain","score":0.8949999809265137},{"id":"https://openalex.org/keywords/28-nm-technology","display_name":"28 nm technology","score":0.703000009059906}],"concepts":[{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6862446069717407},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.670971155166626},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.6377788782119751},{"id":"https://openalex.org/C93389723","wikidata":"https://www.wikidata.org/wiki/Q7247313","display_name":"Process variation","level":3,"score":0.591160237789154},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5165740251541138},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.5085576772689819},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5037803053855896},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.47381511330604553},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4189736247062683},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4188840091228485},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.41263625025749207},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.3548150658607483},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.35439926385879517},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.32049596309661865},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.31065213680267334},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.26128971576690674},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.17219901084899902},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.11457690596580505},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.10803836584091187},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.06943550705909729},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/iirw.2014.7049513","doi":"https://doi.org/10.1109/iirw.2014.7049513","is_oa":false,"landing_page_url":"https://doi.org/10.1109/iirw.2014.7049513","pdf_url":null,"source":{"id":"https://openalex.org/S4210230073","display_name":"IEEE International Integrated Reliability Workshop final report","issn_l":"1930-8841","issn":["1930-8841","2374-8036"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE International Integrated Reliability Workshop Final Report (IIRW)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W2036064369","https://openalex.org/W2052508807","https://openalex.org/W2079719098","https://openalex.org/W2095601935","https://openalex.org/W2102352834","https://openalex.org/W2110237089","https://openalex.org/W2111758240","https://openalex.org/W2117517685","https://openalex.org/W2133178842","https://openalex.org/W2899501811","https://openalex.org/W6675726429"],"related_works":["https://openalex.org/W3038538248","https://openalex.org/W2079719098","https://openalex.org/W7047338344","https://openalex.org/W1607314904","https://openalex.org/W7147687431","https://openalex.org/W2980921962","https://openalex.org/W2023009996","https://openalex.org/W2911580614","https://openalex.org/W6964028472","https://openalex.org/W2120024693"],"abstract_inverted_index":{"A":[0],"comprehensive":[1],"study":[2],"of":[3],"HC":[4,33],"reliability":[5],"and":[6,29],"process":[7,23,68],"change":[8],"variation":[9,24],"for":[10],"submicron":[11],"fully":[12],"depleted":[13],"Silicon":[14],"On":[15],"Insulator":[16],"(FDSOI)":[17],"MOSFET's":[18],"is":[19],"presented.":[20],"The":[21],"different":[22,67],"within":[25],"the":[26,66],"FDSOI":[27],"technology":[28],"their":[30],"impact":[31],"on":[32],"degradation":[34],"are":[35],"examined":[36],"(i.e.":[37],"channel":[38],"length":[39],"L,":[40],"Source/Drain":[41],"resistance":[42],"RSD,":[43],"oxide":[44],"thickness":[45],"Tox,":[46],"lightly-doped":[47],"drain":[48],"LDD).":[49],"In":[50],"order":[51],"to":[52,65],"prove":[53],"its":[54],"consistence,":[55],"our":[56],"energy":[57],"driven":[58],"model":[59],"recently":[60],"presented":[61],"will":[62],"be":[63],"applied":[64],"changes.":[69]},"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}