{"id":"https://openalex.org/W2014074433","doi":"https://doi.org/10.1116/1.588902","title":"High index orientation effects of strained self-assembled InGaAs quantum dots","display_name":"High index orientation effects of strained self-assembled InGaAs quantum dots","publication_year":1996,"publication_date":"1996-05-01","ids":{"openalex":"https://openalex.org/W2014074433","doi":"https://doi.org/10.1116/1.588902","mag":"2014074433"},"language":"en","primary_location":{"id":"doi:10.1116/1.588902","doi":"https://doi.org/10.1116/1.588902","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.588902","pdf_url":null,"source":{"id":"https://openalex.org/S4210169477","display_name":"Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena","issn_l":"1071-1023","issn":["1071-1023","1520-8567"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","poland-70"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science &amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5001639266","display_name":"Dmitri Lubyshev","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I17974374","display_name":"Universidade de S\u00e3o Paulo","ror":"https://ror.org/036rp1748","country_code":"BR","type":"education","lineage":["https://openalex.org/I17974374"]},{"id":"https://openalex.org/I4405267372","display_name":"Instituto de F\u00edsica de S\u00e3o Carlos","ror":"https://ror.org/02f1crb75","country_code":"BR","type":"education","lineage":["https://openalex.org/I17974374","https://openalex.org/I4405267372"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"D. I. Lubyshev","raw_affiliation_strings":["Instituto de F\u00edsica de S\u00e3o Carlos-Universidade de S\u00e3o Paulo, 13960-970 S\u00e3o Carlos, SP, Brazil"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instituto de F\u00edsica de S\u00e3o Carlos-Universidade de S\u00e3o Paulo, 13960-970 S\u00e3o Carlos, SP, Brazil","institution_ids":["https://openalex.org/I17974374","https://openalex.org/I4405267372"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087856138","display_name":"Pedro Pablo Gonz\u00e1lez\u2010Borrero","orcid":"https://orcid.org/0000-0002-7453-4924","observed_orcids":["https://orcid.org/0000-0002-7453-4924"]},"institutions":[{"id":"https://openalex.org/I17974374","display_name":"Universidade de S\u00e3o Paulo","ror":"https://ror.org/036rp1748","country_code":"BR","type":"education","lineage":["https://openalex.org/I17974374"]},{"id":"https://openalex.org/I4405267372","display_name":"Instituto de F\u00edsica de S\u00e3o Carlos","ror":"https://ror.org/02f1crb75","country_code":"BR","type":"education","lineage":["https://openalex.org/I17974374","https://openalex.org/I4405267372"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"P. P. Gonz\u00e1lez-Borrero","raw_affiliation_strings":["Instituto de F\u00edsica de S\u00e3o Carlos-Universidade de S\u00e3o Paulo, 13960-970 S\u00e3o Carlos, SP, Brazil"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instituto de F\u00edsica de S\u00e3o Carlos-Universidade de S\u00e3o Paulo, 13960-970 S\u00e3o Carlos, SP, Brazil","institution_ids":["https://openalex.org/I17974374","https://openalex.org/I4405267372"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029940098","display_name":"Euclydes Marega Jr.","orcid":"https://orcid.org/0000-0002-3334-4630","observed_orcids":["https://orcid.org/0000-0002-3334-4630"]},"institutions":[{"id":"https://openalex.org/I17974374","display_name":"Universidade de S\u00e3o Paulo","ror":"https://ror.org/036rp1748","country_code":"BR","type":"education","lineage":["https://openalex.org/I17974374"]},{"id":"https://openalex.org/I4405267372","display_name":"Instituto de F\u00edsica de S\u00e3o Carlos","ror":"https://ror.org/02f1crb75","country_code":"BR","type":"education","lineage":["https://openalex.org/I17974374","https://openalex.org/I4405267372"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"E. Marega","raw_affiliation_strings":["Instituto de F\u00edsica de S\u00e3o Carlos-Universidade de S\u00e3o Paulo, 13960-970 S\u00e3o Carlos, SP, Brazil"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instituto de F\u00edsica de S\u00e3o Carlos-Universidade de S\u00e3o Paulo, 13960-970 S\u00e3o Carlos, SP, Brazil","institution_ids":["https://openalex.org/I17974374","https://openalex.org/I4405267372"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084305410","display_name":"Emmanuel Olivier Petitprez","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I17974374","display_name":"Universidade de S\u00e3o Paulo","ror":"https://ror.org/036rp1748","country_code":"BR","type":"education","lineage":["https://openalex.org/I17974374"]},{"id":"https://openalex.org/I4405267372","display_name":"Instituto de F\u00edsica de S\u00e3o Carlos","ror":"https://ror.org/02f1crb75","country_code":"BR","type":"education","lineage":["https://openalex.org/I17974374","https://openalex.org/I4405267372"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"E. Petitprez","raw_affiliation_strings":["Instituto de F\u00edsica de S\u00e3o Carlos-Universidade de S\u00e3o Paulo, 13960-970 S\u00e3o Carlos, SP, Brazil"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instituto de F\u00edsica de S\u00e3o Carlos-Universidade de S\u00e3o Paulo, 13960-970 S\u00e3o Carlos, SP, Brazil","institution_ids":["https://openalex.org/I17974374","https://openalex.org/I4405267372"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5013701136","display_name":"P. Basmaji","orcid":"https://orcid.org/0000-0003-0620-7056","observed_orcids":["https://orcid.org/0000-0003-0620-7056"]},"institutions":[{"id":"https://openalex.org/I17974374","display_name":"Universidade de S\u00e3o Paulo","ror":"https://ror.org/036rp1748","country_code":"BR","type":"education","lineage":["https://openalex.org/I17974374"]},{"id":"https://openalex.org/I4405267372","display_name":"Instituto de F\u00edsica de S\u00e3o Carlos","ror":"https://ror.org/02f1crb75","country_code":"BR","type":"education","lineage":["https://openalex.org/I17974374","https://openalex.org/I4405267372"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"P. Basmaji","raw_affiliation_strings":["Instituto de F\u00edsica de S\u00e3o Carlos-Universidade de S\u00e3o Paulo, 13960-970 S\u00e3o Carlos, SP, Brazil"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instituto de F\u00edsica de S\u00e3o Carlos-Universidade de S\u00e3o Paulo, 13960-970 S\u00e3o Carlos, SP, Brazil","institution_ids":["https://openalex.org/I17974374","https://openalex.org/I4405267372"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":7.2013,"has_fulltext":false,"cited_by_count":73,"citation_normalized_percentile":{"value":0.97931932,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"14","issue":"3","first_page":"2212","last_page":"2215"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ingaas-quantum-dots","display_name":"InGaAs quantum dots","score":0.890999972820282},{"id":"https://openalex.org/keywords/strained-quantum-dots","display_name":"strained quantum dots","score":0.9350000023841858},{"id":"https://openalex.org/keywords/self-assembled-quantum-dots","display_name":"self-assembled quantum dots","score":0.871999979019165},{"id":"https://openalex.org/keywords/crystallographic-orientation-effects","display_name":"crystal orientation effects","score":0.5120000243186951},{"id":"https://openalex.org/keywords/photoluminescence","display_name":"photoluminescence","score":0.8479999899864197},{"id":"https://openalex.org/keywords/quantum-efficiency","display_name":"quantum efficiency","score":0.8980000019073486},{"id":"https://openalex.org/keywords/thermal-quenching","display_name":"thermal quenching","score":0.9229999780654907},{"id":"https://openalex.org/keywords/electron-hole-recombination","display_name":"electron-hole recombination","score":0.7089999914169312},{"id":"https://openalex.org/keywords/polarized-photoluminescence","display_name":"polarized photoluminescence","score":0.8870000243186951},{"id":"https://openalex.org/keywords/structural-anisotropy","display_name":"structural anisotropy","score":0.9559999704360962},{"id":"https://openalex.org/keywords/ingaas-gaas-heterostructures","display_name":"InGaAs/GaAs heterostructures","score":0.8550000190734863}],"concepts":[{"id":"https://openalex.org/C124657808","wikidata":"https://www.wikidata.org/wiki/Q1133068","display_name":"Quantum dot","level":2,"score":0.8997522592544556},{"id":"https://openalex.org/C85080765","wikidata":"https://www.wikidata.org/wiki/Q614893","display_name":"Photoluminescence","level":2,"score":0.8725534677505493},{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.6086574196815491},{"id":"https://openalex.org/C150724011","wikidata":"https://www.wikidata.org/wiki/Q1055226","display_name":"Quantum point contact","level":4,"score":0.5845118165016174},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5380565524101257},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.4985625743865967},{"id":"https://openalex.org/C29169072","wikidata":"https://www.wikidata.org/wiki/Q521166","display_name":"Quantum well","level":3,"score":0.4948570132255554},{"id":"https://openalex.org/C74130334","wikidata":"https://www.wikidata.org/wiki/Q4252980","display_name":"Quantum dot laser","level":4,"score":0.4510582387447357},{"id":"https://openalex.org/C85725439","wikidata":"https://www.wikidata.org/wiki/Q466686","display_name":"Anisotropy","level":2,"score":0.4291321635246277},{"id":"https://openalex.org/C89298294","wikidata":"https://www.wikidata.org/wiki/Q5357904","display_name":"Electro-absorption modulator","level":5,"score":0.4173368811607361},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3634943962097168},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3534737527370453},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.21228542923927307},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.1984575390815735},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.12609267234802246},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.0513746440410614},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1116/1.588902","doi":"https://doi.org/10.1116/1.588902","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.588902","pdf_url":null,"source":{"id":"https://openalex.org/S4210169477","display_name":"Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena","issn_l":"1071-1023","issn":["1071-1023","1520-8567"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","poland-70"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science &amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320320997","display_name":"Funda\u00e7\u00e3o de Amparo \u00e0 Pesquisa do Estado de S\u00e3o Paulo","ror":"https://ror.org/02ddkpn78"},{"id":"https://openalex.org/F4320321091","display_name":"Coordena\u00e7\u00e3o de Aperfei\u00e7oamento de Pessoal de N\u00edvel Superior","ror":"https://ror.org/00x0ma614"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W1972045779","https://openalex.org/W2020960584","https://openalex.org/W2054118200","https://openalex.org/W2021472987","https://openalex.org/W2004760086","https://openalex.org/W7160013720","https://openalex.org/W1617666702","https://openalex.org/W3112043609","https://openalex.org/W2036900850","https://openalex.org/W7097693109"],"abstract_inverted_index":{"Optical":[0],"characterization":[1],"of":[2,76,87],"strained":[3],"InGaAs/GaAs":[4],"quantum":[5,57,63,66,78,100,108,120],"dots":[6,49,64,79,101],"grown":[7,50],"by":[8,84,118],"molecular":[9],"beam":[10],"epitaxy":[11],"on":[12,51],"(001)":[13],"and":[14,21,45,65],"(n11)B,":[15],"where":[16],"n=1,":[17],"2,":[18],"3,":[19],"5,":[20],"7":[22],"orientations":[23],"is":[24,68,102],"reported":[25],"in":[26,38,99,107],"this":[27],"work.":[28],"Quantum":[29,48],"dot":[30],"photoluminescence":[31,60],"emission":[32,98],"shows":[33],"remarkable":[34],"orientation":[35],"effects,":[36],"presented":[37],"peak":[39],"shape,":[40],"full":[41],"width":[42],"at":[43],"half-maximum,":[44],"integrated":[46,59],"intensity.":[47],"the":[52,77,119],"(711)B":[53],"plane":[54],"demonstrate":[55],"high":[56],"efficiency:":[58],"ratio":[61],"between":[62],"well":[67],"about":[69],"10.":[70],"Our":[71],"results":[72],"indicate":[73],"an":[74],"enhancement":[75],"onset":[80],"thermal":[81,95],"quenching":[82],"energy":[83,93],"a":[85],"factor":[86],"2.5":[88],"for":[89,94],"all":[90],"orientations.":[91],"Activation":[92],"stimulated":[96],"electron\u2013hole":[97],"2\u20135":[103],"times":[104],"higher":[105],"than":[106],"wells.":[109],"Photoluminescence":[110],"polarization":[111],"measurements":[112],"show":[113],"strong":[114],"in-plane":[115],"dependence":[116],"caused":[117],"dots\u2019":[121],"structural":[122],"anisotropy.":[123]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2016-06-24T00:00:00"}
