{"id":"https://openalex.org/W2014009187","doi":"https://doi.org/10.1063/1.1851001","title":"Hot-electron transport in 4H\u2013SiC","display_name":"Hot-electron transport in 4H\u2013SiC","publication_year":2005,"publication_date":"2005-01-05","ids":{"openalex":"https://openalex.org/W2014009187","doi":"https://doi.org/10.1063/1.1851001","mag":"2014009187"},"language":"en","primary_location":{"id":"doi:10.1063/1.1851001","doi":"https://doi.org/10.1063/1.1851001","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1851001","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5000340707","display_name":"Linas Ardaravi\u010dius","orcid":"https://orcid.org/0000-0002-2685-7446","observed_orcids":["https://orcid.org/0000-0002-2685-7446"]},"institutions":[{"id":"https://openalex.org/I4210087412","display_name":"Center for Physical Sciences and Technology","ror":"https://ror.org/010310r32","country_code":"LT","type":"facility","lineage":["https://openalex.org/I4210087412"]}],"countries":["LT"],"is_corresponding":false,"raw_author_name":"L. Ardaravi\u010dius","raw_affiliation_strings":["Semiconductor Physics Institute , A Go\u0161tauto 11, Vilnius LT01108, Lithuania"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Physics Institute , A Go\u0161tauto 11, Vilnius LT01108, Lithuania","institution_ids":["https://openalex.org/I4210087412"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037443570","display_name":"A. Matulionis","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210087412","display_name":"Center for Physical Sciences and Technology","ror":"https://ror.org/010310r32","country_code":"LT","type":"facility","lineage":["https://openalex.org/I4210087412"]}],"countries":["LT"],"is_corresponding":false,"raw_author_name":"A. Matulionis","raw_affiliation_strings":["Semiconductor Physics Institute , A Go\u0161tauto 11, Vilnius LT01108, Lithuania"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Physics Institute , A Go\u0161tauto 11, Vilnius LT01108, Lithuania","institution_ids":["https://openalex.org/I4210087412"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027965686","display_name":"O. Kiprijanovi\u010d","orcid":"https://orcid.org/0000-0003-2729-1066","observed_orcids":["https://orcid.org/0000-0003-2729-1066"]},"institutions":[{"id":"https://openalex.org/I4210087412","display_name":"Center for Physical Sciences and Technology","ror":"https://ror.org/010310r32","country_code":"LT","type":"facility","lineage":["https://openalex.org/I4210087412"]}],"countries":["LT"],"is_corresponding":false,"raw_author_name":"O. Kiprijanovic","raw_affiliation_strings":["Semiconductor Physics Institute , A Go\u0161tauto 11, Vilnius LT01108, Lithuania"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Physics Institute , A Go\u0161tauto 11, Vilnius LT01108, Lithuania","institution_ids":["https://openalex.org/I4210087412"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048795209","display_name":"J. Liberis","orcid":"https://orcid.org/0000-0001-6254-8547","observed_orcids":["https://orcid.org/0000-0001-6254-8547"]},"institutions":[{"id":"https://openalex.org/I4210087412","display_name":"Center for Physical Sciences and Technology","ror":"https://ror.org/010310r32","country_code":"LT","type":"facility","lineage":["https://openalex.org/I4210087412"]}],"countries":["LT"],"is_corresponding":false,"raw_author_name":"J. Liberis","raw_affiliation_strings":["Semiconductor Physics Institute , A Go\u0161tauto 11, Vilnius LT01108, Lithuania"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Physics Institute , A Go\u0161tauto 11, Vilnius LT01108, Lithuania","institution_ids":["https://openalex.org/I4210087412"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053169867","display_name":"Ho\u2010Young Cha","orcid":"https://orcid.org/0000-0002-1363-3152","observed_orcids":["https://orcid.org/0000-0002-1363-3152"]},"institutions":[{"id":"https://openalex.org/I205783295","display_name":"Cornell University","ror":"https://ror.org/05bnh6r87","country_code":"US","type":"education","lineage":["https://openalex.org/I205783295"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H.-Y. Cha","raw_affiliation_strings":["Cornell University , 425 Philips Hall, Ithaca, New York 14853"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Cornell University , 425 Philips Hall, Ithaca, New York 14853","institution_ids":["https://openalex.org/I205783295"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111472820","display_name":"LESTER F. EASTMAN","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I205783295","display_name":"Cornell University","ror":"https://ror.org/05bnh6r87","country_code":"US","type":"education","lineage":["https://openalex.org/I205783295"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"L. F. Eastman","raw_affiliation_strings":["Cornell University , 425 Philips Hall, Ithaca, New York 14853"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Cornell University , 425 Philips Hall, Ithaca, New York 14853","institution_ids":["https://openalex.org/I205783295"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063382303","display_name":"Michael G. Spencer","orcid":"https://orcid.org/0000-0003-0914-9218","observed_orcids":["https://orcid.org/0000-0003-0914-9218"]},"institutions":[{"id":"https://openalex.org/I205783295","display_name":"Cornell University","ror":"https://ror.org/05bnh6r87","country_code":"US","type":"education","lineage":["https://openalex.org/I205783295"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. G. Spencer","raw_affiliation_strings":["Cornell University , 425 Philips Hall, Ithaca, New York 14853"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Cornell University , 425 Philips Hall, Ithaca, New York 14853","institution_ids":["https://openalex.org/I205783295"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.2296,"has_fulltext":false,"cited_by_count":15,"citation_normalized_percentile":{"value":0.79583333,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":96},"biblio":{"volume":"86","issue":"2","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/hot-electron-transport","display_name":"hot electron transport","score":0.9929999709129333},{"id":"https://openalex.org/keywords/4h-sic","display_name":"4H-SiC","score":0.9959999918937683},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"silicon carbide","score":0.9179999828338623},{"id":"https://openalex.org/keywords/negative-differential-resistance","display_name":"negative differential resistance","score":0.8550000190734863},{"id":"https://openalex.org/keywords/saturation-velocity","display_name":"saturation velocity","score":0.9350000023841858},{"id":"https://openalex.org/keywords/drift-velocity","display_name":"drift velocity","score":0.7599999904632568},{"id":"https://openalex.org/keywords/high-electric-field","display_name":"high electric field","score":0.6460000276565552}],"concepts":[{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.7469194531440735},{"id":"https://openalex.org/C51141536","wikidata":"https://www.wikidata.org/wiki/Q838801","display_name":"Nanosecond","level":3,"score":0.695071280002594},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.5475316643714905},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.5222345590591431},{"id":"https://openalex.org/C121932024","wikidata":"https://www.wikidata.org/wiki/Q5159376","display_name":"Conductance","level":2,"score":0.4809655249118805},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.4773312211036682},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.4702153503894806},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.45402413606643677},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4525924026966095},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.43945014476776123},{"id":"https://openalex.org/C151431374","wikidata":"https://www.wikidata.org/wiki/Q7426597","display_name":"Saturation velocity","level":4,"score":0.43535569310188293},{"id":"https://openalex.org/C131751877","wikidata":"https://www.wikidata.org/wiki/Q909891","display_name":"Drift velocity","level":3,"score":0.43090328574180603},{"id":"https://openalex.org/C207740977","wikidata":"https://www.wikidata.org/wiki/Q234072","display_name":"Current density","level":2,"score":0.4147469997406006},{"id":"https://openalex.org/C116468062","wikidata":"https://www.wikidata.org/wiki/Q11651","display_name":"Electric current","level":2,"score":0.414470374584198},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.29228174686431885},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.13667461276054382},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.060098081827163696},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.1851001","doi":"https://doi.org/10.1063/1.1851001","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1851001","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1966369780","https://openalex.org/W1968646817","https://openalex.org/W1970198604","https://openalex.org/W1976367170","https://openalex.org/W1998266613","https://openalex.org/W2000846431","https://openalex.org/W2002654474","https://openalex.org/W2014718851","https://openalex.org/W2020367549","https://openalex.org/W2029065013","https://openalex.org/W2074103508","https://openalex.org/W2076862654","https://openalex.org/W2083726625","https://openalex.org/W2088705226"],"related_works":["https://openalex.org/W7099999378","https://openalex.org/W2414950578","https://openalex.org/W2000846431","https://openalex.org/W2942611635","https://openalex.org/W3156166697","https://openalex.org/W2473685288","https://openalex.org/W2105838914","https://openalex.org/W2040175037","https://openalex.org/W7213334706","https://openalex.org/W7054629938"],"abstract_inverted_index":{"Nanosecond-pulsed":[0],"technique":[1],"is":[2,43,72,94],"used":[3],"to":[4,14,34,86],"study":[5],"hot-electron":[6],"transport":[7],"in":[8,57],"donor-doped":[9],"4H\u2013SiC":[10],"(n=2\u00d71017cm\u22123)":[11],"biased":[12],"parallel":[13],"the":[15,46,58,75,79,82,88,91],"basal":[16],"plane.":[17],"The":[18,64],"measurements":[19],"of":[20,48,66,81,90],"current":[21,59],"with":[22,38],"1ns":[23],"voltage":[24],"pulses":[25],"are":[26],"carried":[27],"out":[28],"at":[29,60,98],"average":[30],"electric":[31,70],"fields":[32,49,61],"up":[33],"570kV\u2215cm.":[35],"A":[36],"region":[37],"a":[39,54],"negative":[40,83],"differential":[41,84],"conductance":[42,85],"observed":[44],"for":[45,74],"range":[47,77],"exceeding":[50],"280kV\u2215cm,":[51],"followed":[52],"by":[53],"sharp":[55],"increase":[56],"over":[62],"345kV\u2215cm.":[63],"dependence":[65],"drift":[67],"velocity":[68,93],"on":[69],"field":[71,76],"deduced":[73],"below":[78],"onset":[80],"appear:":[87],"value":[89],"saturation":[92],"estimated":[95],"as":[96],"1.4\u00d7107cm\u2215s":[97],"room":[99],"temperature.":[100]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2}],"updated_date":"2026-10-28T10:33:24.094632","created_date":"2016-06-24T00:00:00"}