{"id":"https://openalex.org/W2013933530","doi":"https://doi.org/10.1109/led.2012.2185920","title":"InP HBT Transferred to Higher Thermal Conductivity Substrate","display_name":"InP HBT Transferred to Higher Thermal Conductivity Substrate","publication_year":2012,"publication_date":"2012-03-13","ids":{"openalex":"https://openalex.org/W2013933530","doi":"https://doi.org/10.1109/led.2012.2185920","mag":"2013933530"},"language":"en","primary_location":{"id":"doi:10.1109/led.2012.2185920","doi":"https://doi.org/10.1109/led.2012.2185920","is_oa":false,"landing_page_url":"https://doi.org/10.1109/led.2012.2185920","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5066769747","display_name":"Dennis W. Scott","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Dennis W. Scott","raw_affiliation_strings":["Northrop Grumman Corporation, Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Northrop Grumman Corporation, Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086199335","display_name":"Cedric Monier","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Cedric Monier","raw_affiliation_strings":["Northrop Grumman Corporation, Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Northrop Grumman Corporation, Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068566197","display_name":"Sujane Wang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sujane Wang","raw_affiliation_strings":["Northrop Grumman Corporation, Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Northrop Grumman Corporation, Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069272465","display_name":"Vesna Radisic","orcid":"https://orcid.org/0000-0001-9740-1836","observed_orcids":["https://orcid.org/0000-0001-9740-1836"]},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Vesna Radisic","raw_affiliation_strings":["Northrop Grumman Corporation, Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Northrop Grumman Corporation, Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023628088","display_name":"Phuong Nguyen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Phuong Nguyen","raw_affiliation_strings":["Northrop Grumman Corporation, Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Northrop Grumman Corporation, Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007607182","display_name":"Abdullah Cavus","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Abdullah Cavus","raw_affiliation_strings":["Northrop Grumman Corporation, Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Northrop Grumman Corporation, Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078379335","display_name":"William R. Deal","orcid":"https://orcid.org/0000-0002-6343-9489","observed_orcids":["https://orcid.org/0000-0002-6343-9489"]},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"William R. Deal","raw_affiliation_strings":["Northrop Grumman Corporation, Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Northrop Grumman Corporation, Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5025920971","display_name":"AUGUSTO L. GUTIERREZ-AITKEN","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Augusto Gutierrez-Aitken","raw_affiliation_strings":["Northrop Grumman Corporation, Redondo Beach, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Northrop Grumman Corporation, Redondo Beach, CA, USA","institution_ids":["https://openalex.org/I2948394018"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I2948394018"],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":1.2005,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.80081983,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":96},"biblio":{"volume":"33","issue":"4","first_page":"507","last_page":"509"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.8134999871253967,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.8134999871253967,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.10530000180006027,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.025299999862909317,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/inp-hbt","display_name":"InP HBT","score":0.7889999747276306},{"id":"https://openalex.org/keywords/double-heterojunction-bipolar-transistors","display_name":"double heterojunction bipolar transistors","score":0.9359999895095825},{"id":"https://openalex.org/keywords/substrate-transfer","display_name":"substrate transfer","score":0.6940000057220459},{"id":"https://openalex.org/keywords/silicon-carbide-substrate","display_name":"SiC substrate","score":0.7649999856948853},{"id":"https://openalex.org/keywords/thermal-conductivity","display_name":"thermal conductivity","score":0.8209999799728394},{"id":"https://openalex.org/keywords/parasitic-capacitance-reduction","display_name":"parasitic capacitance reduction","score":0.7940000295639038},{"id":"https://openalex.org/keywords/junction-temperature","display_name":"junction temperature","score":0.8169999718666077},{"id":"https://openalex.org/keywords/current-gain","display_name":"current gain","score":0.5590000152587891},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"breakdown voltage","score":0.8859999775886536},{"id":"https://openalex.org/keywords/rf-performance","display_name":"RF performance","score":0.8560000061988831},{"id":"https://openalex.org/keywords/maximum-available-gain","display_name":"maximum available gain","score":0.8999999761581421}],"concepts":[{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.6890445351600647},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5780436992645264},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4058026075363159},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.36831405758857727},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3428609073162079},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2995518445968628},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.25041159987449646},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.23925268650054932},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.09778082370758057},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/led.2012.2185920","doi":"https://doi.org/10.1109/led.2012.2185920","is_oa":false,"landing_page_url":"https://doi.org/10.1109/led.2012.2185920","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","score":0.4943999946117401,"display_name":"Industry, innovation and infrastructure"}],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1963756629","https://openalex.org/W2076634786","https://openalex.org/W2082579884","https://openalex.org/W2121186100","https://openalex.org/W2125641640","https://openalex.org/W2145542372","https://openalex.org/W2151556463","https://openalex.org/W2159829399","https://openalex.org/W2168057168"],"related_works":["https://openalex.org/W4389256322","https://openalex.org/W2332005740","https://openalex.org/W1995473113","https://openalex.org/W2135646896","https://openalex.org/W1978138198","https://openalex.org/W1598326046","https://openalex.org/W3153657444","https://openalex.org/W1488134573","https://openalex.org/W1485663120","https://openalex.org/W2151518580"],"abstract_inverted_index":{"We":[0],"report":[1],"the":[2,27,32,79],"first":[3],"demonstration":[4],"of":[5,31],"an":[6],"InP":[7],"double":[8],"heterojunction":[9],"bipolar":[10],"transistor":[11],"(HBT)":[12],"transferred":[13],"to":[14,25,34,40],"a":[15,41],"higher":[16,52],"thermal":[17],"conductivity":[18],"substrate.":[19],"This":[20],"process":[21,81],"allows":[22],"lithographic":[23],"access":[24],"both":[26],"frontside":[28],"and":[29,70,93],"backside":[30],"device":[33,87],"minimize":[35],"parasitic":[36],"capacitances":[37],"while":[38],"transfer":[39],"SiC":[42],"substrate":[43],"should":[44],"reduce":[45],"junction":[46],"temperature":[47],"by":[48],"42%,":[49],"allowing":[50],"for":[51],"current":[53,65],"density":[54],"operation.":[55],"The":[56],"0.20":[57],"\u00d7":[58],"3":[59],"\u03bcm2emitter-area":[60],"HBT":[61],"has":[62],"peak":[63],"common-emitter":[64],"gain":[66,96],"\u03b2":[67],"=":[68],"22":[69],"breakdown":[71],"VBR,CEO>;":[72],"4":[73],"V.":[74],"No":[75],"electrical":[76],"degradation":[77],"from":[78],"transferred-substrate":[80],"is":[82,101],"observed.":[83],"RF":[84],"measurements":[85],"show":[86],"peakf\u03c4=":[88],"397":[89],"GHz,fmax\u2265":[90],"400":[91],"GHz,":[92],"maximum":[94],"available":[95],"(MAG)":[97],"at":[98],"100":[99],"GHz":[100],"15.3":[102],"dB.":[103]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}