{"id":"https://openalex.org/W2013564056","doi":"https://doi.org/10.1016/j.elecom.2012.03.011","title":"Monodisperse GaN nanowires prepared by metal-assisted chemical etching with in situ catalyst deposition","display_name":"Monodisperse GaN nanowires prepared by metal-assisted chemical etching with in situ catalyst deposition","publication_year":2012,"publication_date":"2012-03-17","ids":{"openalex":"https://openalex.org/W2013564056","doi":"https://doi.org/10.1016/j.elecom.2012.03.011","mag":"2013564056"},"language":"en","primary_location":{"id":"doi:10.1016/j.elecom.2012.03.011","doi":"https://doi.org/10.1016/j.elecom.2012.03.011","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.elecom.2012.03.011","pdf_url":null,"source":{"id":"https://openalex.org/S1342386","display_name":"Electrochemistry Communications","issn_l":"1388-2481","issn":["1388-2481","1873-1902"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-1","norway-1","oarl","poland-100"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electrochemistry Communications","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5063028394","display_name":"Xuewen Geng","orcid":"https://orcid.org/0000-0002-9477-0297","observed_orcids":["https://orcid.org/0000-0002-9477-0297"]},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]},{"id":"https://openalex.org/I204983213","display_name":"Harbin Institute of Technology","ror":"https://ror.org/01yqg2h08","country_code":"CN","type":"education","lineage":["https://openalex.org/I204983213"]}],"countries":["CN","US"],"is_corresponding":true,"raw_author_name":"Xuewen Geng","raw_affiliation_strings":["Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, IN 46556, USA","School of Materials Science and Engineering, Harbin Institute of Technology, No.92, West Da-Zhi Street, Harbin, Heilongjiang Province, 150001, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, IN 46556, USA","institution_ids":["https://openalex.org/I107639228"]},{"raw_affiliation_string":"School of Materials Science and Engineering, Harbin Institute of Technology, No.92, West Da-Zhi Street, Harbin, Heilongjiang Province, 150001, People's Republic of China","institution_ids":["https://openalex.org/I204983213"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038946563","display_name":"Barrett K. Duan","orcid":"https://orcid.org/0000-0002-9908-7104","observed_orcids":["https://orcid.org/0000-0002-9908-7104"]},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Barrett K. Duan","raw_affiliation_strings":["Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, IN 46556, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, IN 46556, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031919796","display_name":"Dane A. Grismer","orcid":"https://orcid.org/0009-0007-5342-6311","observed_orcids":["https://orcid.org/0009-0007-5342-6311"]},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Dane A. Grismer","raw_affiliation_strings":["Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, IN 46556, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, IN 46556, USA","institution_ids":["https://openalex.org/I107639228"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055306776","display_name":"Liancheng Zhao","orcid":"https://orcid.org/0009-0002-2244-166X","observed_orcids":["https://orcid.org/0009-0002-2244-166X","https://orcid.org/0000-0002-1414-3454"]},"institutions":[{"id":"https://openalex.org/I204983213","display_name":"Harbin Institute of Technology","ror":"https://ror.org/01yqg2h08","country_code":"CN","type":"education","lineage":["https://openalex.org/I204983213"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Liancheng Zhao","raw_affiliation_strings":["School of Materials Science and Engineering, Harbin Institute of Technology, No.92, West Da-Zhi Street, Harbin, Heilongjiang Province, 150001, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Materials Science and Engineering, Harbin Institute of Technology, No.92, West Da-Zhi Street, Harbin, Heilongjiang Province, 150001, People's Republic of China","institution_ids":["https://openalex.org/I204983213"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5090209222","display_name":"Paul W. Bohn","orcid":"https://orcid.org/0000-0001-9052-0349","observed_orcids":["https://orcid.org/0000-0001-9052-0349"]},"institutions":[{"id":"https://openalex.org/I107639228","display_name":"University of Notre Dame","ror":"https://ror.org/00mkhxb43","country_code":"US","type":"education","lineage":["https://openalex.org/I107639228"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Paul W. Bohn","raw_affiliation_strings":["Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, IN 46556, USA","Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, IN 46556, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, IN 46556, USA","institution_ids":["https://openalex.org/I107639228"]},{"raw_affiliation_string":"Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, IN 46556, USA","institution_ids":["https://openalex.org/I107639228"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5063028394","https://openalex.org/A5090209222"],"corresponding_institution_ids":["https://openalex.org/I107639228","https://openalex.org/I204983213"],"apc_list":{"value":2630,"currency":"USD","value_usd":2630},"apc_paid":null,"fwci":1.6141,"has_fulltext":false,"cited_by_count":51,"citation_normalized_percentile":{"value":0.83498854,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":93,"max":99},"biblio":{"volume":"19","issue":null,"first_page":"39","last_page":"42"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9297000169754028,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9297000169754028,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.05389999970793724,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11169","display_name":"Silicon Nanostructures and Photoluminescence","score":0.006300000008195639,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gan-nanowires","display_name":"GaN nanowires","score":0.9879999756813049},{"id":"https://openalex.org/keywords/metal-assisted-chemical-etching","display_name":"metal-assisted chemical etching","score":0.953000009059906},{"id":"https://openalex.org/keywords/porous-gan","display_name":"porous GaN","score":0.7129999995231628},{"id":"https://openalex.org/keywords/galvanic-cells","display_name":"galvanic cells","score":0.781000018119812},{"id":"https://openalex.org/keywords/uv-illumination","display_name":"UV illumination","score":0.6570000052452087}],"concepts":[{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.8034147024154663},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7096993923187256},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.7053398489952087},{"id":"https://openalex.org/C11432220","wikidata":"https://www.wikidata.org/wiki/Q1975334","display_name":"Dispersity","level":2,"score":0.6078912019729614},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.6024800539016724},{"id":"https://openalex.org/C33220542","wikidata":"https://www.wikidata.org/wiki/Q6086567","display_name":"Isotropic etching","level":4,"score":0.5699265003204346},{"id":"https://openalex.org/C161790260","wikidata":"https://www.wikidata.org/wiki/Q82264","display_name":"Catalysis","level":2,"score":0.557535707950592},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.547010600566864},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.5437563061714172},{"id":"https://openalex.org/C155672457","wikidata":"https://www.wikidata.org/wiki/Q61231","display_name":"Nanoparticle","level":2,"score":0.5016677379608154},{"id":"https://openalex.org/C186187911","wikidata":"https://www.wikidata.org/wiki/Q1093894","display_name":"Nanostructure","level":2,"score":0.44852039217948914},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.4197111427783966},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.21718329191207886},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.19384047389030457},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.06726202368736267},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C188027245","wikidata":"https://www.wikidata.org/wiki/Q750446","display_name":"Polymer chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1016/j.elecom.2012.03.011","doi":"https://doi.org/10.1016/j.elecom.2012.03.011","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.elecom.2012.03.011","pdf_url":null,"source":{"id":"https://openalex.org/S1342386","display_name":"Electrochemistry Communications","issn_l":"1388-2481","issn":["1388-2481","1873-1902"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-b","jufo-1","norway-1","oarl","poland-100"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electrochemistry Communications","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:43ac1052959643889dfebfa25819bf2f","doi":null,"is_oa":false,"landing_page_url":"https://doaj.org/article/43ac1052959643889dfebfa25819bf2f","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Electrochemistry Communications, Vol 19, Iss , Pp 39-42 (2012)","raw_type":"article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W1636543212","https://openalex.org/W1966484207","https://openalex.org/W1983477436","https://openalex.org/W1999955312","https://openalex.org/W2017901301","https://openalex.org/W2020134657","https://openalex.org/W2033907889","https://openalex.org/W2036755647","https://openalex.org/W2049947000","https://openalex.org/W2061835626","https://openalex.org/W2064218362","https://openalex.org/W2074370930","https://openalex.org/W2080774188","https://openalex.org/W2089576688","https://openalex.org/W2091777171","https://openalex.org/W2092018938","https://openalex.org/W2099459460","https://openalex.org/W2125700073","https://openalex.org/W2160708428","https://openalex.org/W2326379093","https://openalex.org/W3039602780"],"related_works":["https://openalex.org/W2620787982","https://openalex.org/W2251705297","https://openalex.org/W2942773405","https://openalex.org/W4312528596","https://openalex.org/W4406980775","https://openalex.org/W3216723618","https://openalex.org/W1981552175","https://openalex.org/W859670032","https://openalex.org/W4396512206","https://openalex.org/W2605990370"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":5},{"year":2021,"cited_by_count":10},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":4},{"year":2017,"cited_by_count":5},{"year":2016,"cited_by_count":5},{"year":2015,"cited_by_count":3},{"year":2014,"cited_by_count":5},{"year":2013,"cited_by_count":2}],"updated_date":"2026-11-05T12:25:35.769452","created_date":"2016-06-24T00:00:00"}