{"id":"https://openalex.org/W2013406473","doi":"https://doi.org/10.1116/1.584156","title":"The effects of annealing encapsulant and ambient on the barrier height of WNx/GaAs contact and self-aligned gate field effect transistor fabrication","display_name":"The effects of annealing encapsulant and ambient on the barrier height of WNx/GaAs contact and self-aligned gate field effect transistor fabrication","publication_year":1988,"publication_date":"1988-11-01","ids":{"openalex":"https://openalex.org/W2013406473","doi":"https://doi.org/10.1116/1.584156","mag":"2013406473"},"language":"en","primary_location":{"id":"doi:10.1116/1.584156","doi":"https://doi.org/10.1116/1.584156","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.584156","pdf_url":null,"source":{"id":"https://openalex.org/S4210191927","display_name":"Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena","issn_l":"0734-211X","issn":["0734-211X","2327-9877"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320061","host_organization_name":"AIP Publishing","host_organization_lineage":["https://openalex.org/P4310320061","https://openalex.org/P4310320257"],"host_organization_lineage_names":["AIP Publishing","American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103446891","display_name":"S. K. Cheung","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. K. Cheung","raw_affiliation_strings":["Ford Microelectronics, Incorporated, Colorado Springs, Colorado 80921"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ford Microelectronics, Incorporated, Colorado Springs, Colorado 80921","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109201125","display_name":"Siang Ping Kwok","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. P. Kwok","raw_affiliation_strings":["Ford Microelectronics, Incorporated, Colorado Springs, Colorado 80921"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ford Microelectronics, Incorporated, Colorado Springs, Colorado 80921","institution_ids":[]}]},{"author_position":"middle","author":{"id":null,"display_name":"A. Kaleta","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"A. Kaleta","raw_affiliation_strings":["Ford Microelectronics, Incorporated, Colorado Springs, Colorado 80921"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Ford Microelectronics, Incorporated, Colorado Springs, Colorado 80921","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002707278","display_name":"Kin Man Yu","orcid":"https://orcid.org/0000-0003-1350-9642","observed_orcids":["https://orcid.org/0000-0003-1350-9642"]},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. M. Yu","raw_affiliation_strings":["University of California, Berkeley, California 94720"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of California, Berkeley, California 94720","institution_ids":["https://openalex.org/I95457486"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111918834","display_name":"J.M. Jaklevic","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. M. Jaklevic","raw_affiliation_strings":["University of California, Berkeley, California 94720"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of California, Berkeley, California 94720","institution_ids":["https://openalex.org/I95457486"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5107842852","display_name":"C. L. Liang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C. L. Liang","raw_affiliation_strings":["University of California, Berkeley, California 94720"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of California, Berkeley, California 94720","institution_ids":["https://openalex.org/I95457486"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009041573","display_name":"Nathan W. Cheung","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"N. W. Cheung","raw_affiliation_strings":["University of California, Berkeley, California 94720"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of California, Berkeley, California 94720","institution_ids":["https://openalex.org/I95457486"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5105890465","display_name":"E. E. Haller","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"E. E. Haller","raw_affiliation_strings":["University of California, Berkeley, California 94720"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of California, Berkeley, California 94720","institution_ids":["https://openalex.org/I95457486"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.7763,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.66533683,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"6","issue":"6","first_page":"1779","last_page":"1784"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0012000000569969416,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/schottky-barrier-height","display_name":"Schottky barrier height","score":0.9269999861717224},{"id":"https://openalex.org/keywords/furnace-annealing","display_name":"furnace annealing","score":0.6690000295639038},{"id":"https://openalex.org/keywords/rapid-thermal-annealing","display_name":"rapid thermal annealing","score":0.9829999804496765},{"id":"https://openalex.org/keywords/interdiffusion","display_name":"interdiffusion","score":0.5920000076293945},{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.9240000247955322},{"id":"https://openalex.org/keywords/short-channel-effects","display_name":"short-channel effects","score":0.7919999957084656},{"id":"https://openalex.org/keywords/transconductance","display_name":"transconductance","score":0.9070000052452087},{"id":"https://openalex.org/keywords/gaas-integrated-circuits","display_name":"GaAs integrated circuits","score":0.7760000228881836}],"concepts":[{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.887347400188446},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.7147167325019836},{"id":"https://openalex.org/C2776776902","wikidata":"https://www.wikidata.org/wiki/Q334599","display_name":"Arsine","level":4,"score":0.6389769911766052},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6215503215789795},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.47184398770332336},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.40344634652137756},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.29966914653778076},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.25804781913757324},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.062599778175354},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C161790260","wikidata":"https://www.wikidata.org/wiki/Q82264","display_name":"Catalysis","level":2,"score":0.0},{"id":"https://openalex.org/C2777716191","wikidata":"https://www.wikidata.org/wiki/Q207877","display_name":"Phosphine","level":3,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1116/1.584156","doi":"https://doi.org/10.1116/1.584156","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.584156","pdf_url":null,"source":{"id":"https://openalex.org/S4210191927","display_name":"Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena","issn_l":"0734-211X","issn":["0734-211X","2327-9877"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320061","host_organization_name":"AIP Publishing","host_organization_lineage":["https://openalex.org/P4310320061","https://openalex.org/P4310320257"],"host_organization_lineage_names":["AIP Publishing","American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2022184333","https://openalex.org/W2777341947","https://openalex.org/W2015834396","https://openalex.org/W2095890216","https://openalex.org/W2040299103","https://openalex.org/W1967331962","https://openalex.org/W7001270700","https://openalex.org/W2059842194","https://openalex.org/W7024928669","https://openalex.org/W2021908692"],"abstract_inverted_index":{"It":[0,240],"was":[1,29,71,241,265],"found":[2,242],"that":[3,243,256],"the":[4,25,89,120,130,135,174,196,199,215,218],"barrier":[5,111],"height":[6,112],"of":[7,81,98,124,177,198,214,257,271],"thermally":[8],"stable":[9],"WNx":[10,26,90,200,220],"/GaAs":[11,27,91,201],"Schottky":[12,110],"contacts":[13],"can":[14,207],"be":[15,208],"enhanced":[16],"by":[17,210],"a":[18,204,268],"high-temperature":[19],"annealing":[20,37,48,57,70,96,103,136,153,188,229,246],"technique.":[21],"In":[22],"this":[23],"study,":[24],"contact":[28],"annealed":[30],"under":[31,38,49,59,154],"different":[32],"conditions":[33,137,189],"including":[34],"(i)":[35],"furnace":[36,47,69,102,152,228,245],"SiO2":[39,60,155],"encapsulant":[40,61,156],"with":[41,139,267],"N2":[42],"and":[43,53,62,74,104,157,169,234],"arsine":[44,158,232],"ambient,":[45],"(ii)":[46],"arsine-overpressure":[50],"capless":[51,227,244],"annealing,":[52],"(iii)":[54],"rapid":[55],"thermal":[56],"(RTA)":[58],"argon":[63,238],"ambient.":[64,159,239],"The":[65,109],"temperature":[66,97],"range":[67],"for":[68,75,101,107,133,172],"700\u2013850":[72],"\u00b0C":[73,100,106],"RTA,":[76],"700\u2013950":[77],"\u00b0C.":[78],"RBS":[79],"analysis":[80],"all":[82,134],"samples":[83],"revealed":[84],"no":[85],"detectable":[86],"interdiffusion":[87],"at":[88,129,195,217],"interface":[92],"up":[93,165],"to":[94,119,126,162,166,252],"an":[95,163,231,237],"850":[99],"950":[105],"RTA.":[108,258],"increased":[113],"from":[114],"0.59":[115],"eV,":[116,128],"as":[117,144,146,260,262],"deposited,":[118],"commonly":[121],"reported":[122],"value":[123],"0.72":[125],"0.74":[127],"optimum":[131],"temperatures":[132],"mentioned,":[138],"one":[140],"exception.":[141],"Barrier":[142],"heights":[143],"high":[145,261],"0.8":[147],"eV":[148],"were":[149,223],"obtained":[150,266],"using":[151,225],"This":[160],"corresponds":[161],"enhancement":[164],"80":[167],"meV":[168],"is":[170,182],"significant":[171],"improving":[173],"noise":[175],"margin":[176],"GaAs":[178,216],"integrated":[179],"circuits,":[180],"which":[181],"typically":[183],"200\u2013300":[184],"mV.":[185],"However,":[186],"such":[187],"also":[190],"caused":[191],"leakage":[192,205],"current":[193,206],"localized":[194],"perimeter":[197],"contact.":[202],"Such":[203],"removed":[209],"slight":[211],"mesa":[212],"etching":[213],"edges.":[219],"SAGFET":[221],"structures":[222],"fabricated":[224],"both":[226],"in":[230,236,248],"ambient":[233],"RTA":[235],"resulted":[247],"significantly":[249],"better":[250],"immunity":[251],"short-channel":[253],"effects":[254],"than":[255],"Transconductance":[259],"300":[263],"mS/mm":[264],"gate":[269],"length":[270],"0.5":[272],"\u03bcm.":[273]},"counts_by_year":[],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2016-06-24T00:00:00"}