{"id":"https://openalex.org/W2013270602","doi":"https://doi.org/10.1063/1.4832482","title":"Trap states in AlGaN channel high-electron-mobility transistors","display_name":"Trap states in AlGaN channel high-electron-mobility transistors","publication_year":2013,"publication_date":"2013-11-18","ids":{"openalex":"https://openalex.org/W2013270602","doi":"https://doi.org/10.1063/1.4832482","mag":"2013270602"},"language":"en","primary_location":{"id":"doi:10.1063/1.4832482","doi":"https://doi.org/10.1063/1.4832482","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.4832482","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5090882194","display_name":"Shenglei Zhao","orcid":"https://orcid.org/0000-0002-1406-1088","observed_orcids":["https://orcid.org/0000-0002-1406-1088"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"ShengLei Zhao","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 1 , Xi'an 710071, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 1 , Xi'an 710071, People's Republic of China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024084717","display_name":"Kai Zhang","orcid":"https://orcid.org/0000-0002-2984-5985","observed_orcids":["https://orcid.org/0000-0002-2984-5985"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kai Zhang","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 1 , Xi'an 710071, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 1 , Xi'an 710071, People's Republic of China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082674758","display_name":"Wei Ha","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wei Ha","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 1 , Xi'an 710071, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 1 , Xi'an 710071, People's Republic of China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":null,"display_name":"YongHe Chen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"YongHe Chen","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 1 , Xi'an 710071, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 1 , Xi'an 710071, People's Republic of China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044215108","display_name":"Peng Zhang","orcid":"https://orcid.org/0000-0001-5345-3810","observed_orcids":["https://orcid.org/0000-0001-5345-3810","https://orcid.org/0009-0002-7607-5095"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Peng Zhang","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 1 , Xi'an 710071, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 1 , Xi'an 710071, People's Republic of China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100638045","display_name":"Jincheng Zhang","orcid":"https://orcid.org/0000-0001-7332-6704","observed_orcids":["https://orcid.org/0000-0001-7332-6704","https://orcid.org/0009-0005-1860-0009"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"JinCheng Zhang","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 1 , Xi'an 710071, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 1 , Xi'an 710071, People's Republic of China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100321027","display_name":"Xiaohua Ma","orcid":"https://orcid.org/0000-0002-1331-6253","observed_orcids":["https://orcid.org/0000-0002-1331-6253"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"XiaoHua Ma","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 1 , Xi'an 710071, People's Republic of China","School of Advanced Materials and Nanotechnology, Xidian University 2 , Xi'an 710071, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 1 , Xi'an 710071, People's Republic of China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"School of Advanced Materials and Nanotechnology, Xidian University 2 , Xi'an 710071, People's Republic of China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100427150","display_name":"Yue Hao","orcid":"https://orcid.org/0000-0001-7876-8878","observed_orcids":["https://orcid.org/0000-0001-7876-8878","https://orcid.org/0000-0002-8081-2919"]},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yue Hao","raw_affiliation_strings":["Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 1 , Xi'an 710071, People's Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University 1 , Xi'an 710071, People's Republic of China","institution_ids":["https://openalex.org/I149594827"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I149594827"],"apc_list":null,"apc_paid":null,"fwci":0.9484,"has_fulltext":false,"cited_by_count":18,"citation_normalized_percentile":{"value":0.72980389,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"103","issue":"21","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.00039999998989515007,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/trap-states","display_name":"trap states","score":0.8299999833106995},{"id":"https://openalex.org/keywords/trap-density","display_name":"trap density","score":0.8479999899864197},{"id":"https://openalex.org/keywords/frequency-dependent-capacitance","display_name":"frequency-dependent capacitance","score":0.7940000295639038},{"id":"https://openalex.org/keywords/frequency-dependent-conductance","display_name":"frequency-dependent conductance","score":0.9629999995231628},{"id":"https://openalex.org/keywords/energy-levels","display_name":"energy levels","score":0.4909999966621399},{"id":"https://openalex.org/keywords/schottky-barrier-height","display_name":"Schottky barrier height","score":0.9929999709129333}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6889006495475769},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6554975509643555},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.636727511882782},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.6087703108787537},{"id":"https://openalex.org/C121099081","wikidata":"https://www.wikidata.org/wiki/Q665580","display_name":"Trap (plumbing)","level":2,"score":0.5896679162979126},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5604429244995117},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.47418317198753357},{"id":"https://openalex.org/C121932024","wikidata":"https://www.wikidata.org/wiki/Q5159376","display_name":"Conductance","level":2,"score":0.4705550968647003},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.46039101481437683},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.4104541838169098},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.2119753062725067},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.19464662671089172},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.15095192193984985},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13035848736763},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.07525655627250671},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.060050249099731445},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.05247354507446289},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.4832482","doi":"https://doi.org/10.1063/1.4832482","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.4832482","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1975340932","https://openalex.org/W1979823405","https://openalex.org/W2000321358","https://openalex.org/W2018429898","https://openalex.org/W2045052520","https://openalex.org/W2056276153","https://openalex.org/W2062245785","https://openalex.org/W2077096396","https://openalex.org/W2124738378"],"related_works":["https://openalex.org/W2631686042","https://openalex.org/W2258583306","https://openalex.org/W1971783208","https://openalex.org/W2521127454","https://openalex.org/W4200060118","https://openalex.org/W2072371118","https://openalex.org/W2269069110","https://openalex.org/W2068236473","https://openalex.org/W2265979243","https://openalex.org/W2544558376"],"abstract_inverted_index":{"Frequency":[0],"dependent":[1],"capacitance":[2],"and":[3],"conductance":[4],"measurements":[5],"were":[6],"performed":[7],"to":[8,41],"analyze":[9],"the":[10,14,25,36,54,58,73,81,84,90],"trap":[11,21,55,67],"states":[12,56],"in":[13,24,57,72],"AlGaN":[15,26,59,74],"channel":[16,27,52,60,75],"high-electron-mobility":[17],"transistors":[18],"(HEMTs).":[19],"The":[20,66],"state":[22],"density":[23],"HEMTs":[28,61,76],"decreases":[29],"from":[30],"1.26":[31],"\u00d7":[32,43],"1013":[33],"cm\u22122eV\u22121":[34,45],"at":[35,46],"energy":[37,64,70],"of":[38,83],"0.33":[39],"eV":[40],"4.35":[42],"1011":[44],"0.40":[47],"eV.":[48],"Compared":[49],"with":[50,68],"GaN":[51],"HEMTs,":[53],"have":[62],"deeper":[63,69],"levels.":[65],"levels":[71],"is":[77],"another":[78],"reason":[79],"for":[80],"reduction":[82],"reverse":[85],"gate":[86],"leakage":[87],"current":[88],"besides":[89],"higher":[91],"Schottky":[92],"barrier":[93],"height.":[94]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":5},{"year":2020,"cited_by_count":1},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":3},{"year":2014,"cited_by_count":2}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}