{"id":"https://openalex.org/W2013043816","doi":"https://doi.org/10.1143/jjap.41.464","title":"Computer Simulation of Point-Defect Fields and Microdefect Patterns in Czochralski-Grown Si Crystals","display_name":"Computer Simulation of Point-Defect Fields and Microdefect Patterns in Czochralski-Grown Si Crystals","publication_year":2002,"publication_date":"2002-02-15","ids":{"openalex":"https://openalex.org/W2013043816","doi":"https://doi.org/10.1143/jjap.41.464","mag":"2013043816"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.41.464","doi":"https://doi.org/10.1143/jjap.41.464","is_oa":false,"landing_page_url":"https://doi.org/10.1143/jjap.41.464","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5085876991","display_name":"Nikolai I. Puzanov","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Nikolai I. Puzanov","raw_affiliation_strings":["Podolsk Chemical-Metallurgical Plant, Podolsk, Moscow Region, 142100, Russia","Podolsk Chemical-Metallurgical Plant"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Podolsk Chemical-Metallurgical Plant, Podolsk, Moscow Region, 142100, Russia","institution_ids":[]},{"raw_affiliation_string":"Podolsk Chemical-Metallurgical Plant","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049001521","display_name":"Anna M. Eidenzon","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Anna M. Eidenzon","raw_affiliation_strings":["Podolsk Chemical-Metallurgical Plant, Podolsk, Moscow Region, 142100, Russia","Podolsk Chemical-Metallurgical Plant"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Podolsk Chemical-Metallurgical Plant, Podolsk, Moscow Region, 142100, Russia","institution_ids":[]},{"raw_affiliation_string":"Podolsk Chemical-Metallurgical Plant","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052603362","display_name":"Dmitrii N. Puzanov","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Dmitri N. Puzanov","raw_affiliation_strings":["Podolsk Chemical-Metallurgical Plant, Podolsk, Moscow Region, 142100, Russia","Podolsk Chemical-Metallurgical Plant"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Podolsk Chemical-Metallurgical Plant, Podolsk, Moscow Region, 142100, Russia","institution_ids":[]},{"raw_affiliation_string":"Podolsk Chemical-Metallurgical Plant","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113687499","display_name":"Jun Furukawa","orcid":"https://orcid.org/0000-0002-7284-2261","observed_orcids":["https://orcid.org/0000-0002-7284-2261"]},"institutions":[{"id":"https://openalex.org/I864419238","display_name":"Mitsubishi Materials (Japan)","ror":"https://ror.org/03p5evc41","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861","https://openalex.org/I864419238"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Jun Furukawa","raw_affiliation_strings":["Mitsubishi Materials Silicon Corporation, Technology Division 314 Nishisangao, Noda, Chiba 278-0015, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Mitsubishi Materials Silicon Corporation, Technology Division 314 Nishisangao, Noda, Chiba 278-0015, Japan","institution_ids":["https://openalex.org/I864419238"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019191680","display_name":"Kazuhiro Harada","orcid":"https://orcid.org/0000-0003-0010-2042","observed_orcids":["https://orcid.org/0000-0003-0010-2042"]},"institutions":[{"id":"https://openalex.org/I864419238","display_name":"Mitsubishi Materials (Japan)","ror":"https://ror.org/03p5evc41","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861","https://openalex.org/I864419238"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kazuhiro Harada","raw_affiliation_strings":["Mitsubishi Materials Silicon Corporation, Production Division, 4-3146-12 Yawatahara, Yonezawa, Yamagata 992-1128, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Mitsubishi Materials Silicon Corporation, Production Division, 4-3146-12 Yawatahara, Yonezawa, Yamagata 992-1128, Japan","institution_ids":["https://openalex.org/I864419238"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109361382","display_name":"Naoki Ono","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I864419238","display_name":"Mitsubishi Materials (Japan)","ror":"https://ror.org/03p5evc41","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861","https://openalex.org/I864419238"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Naoki Ono","raw_affiliation_strings":["Mitsubishi Materials Silicon Corporation, Technology Division 314 Nishisangao, Noda, Chiba 278-0015, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Mitsubishi Materials Silicon Corporation, Technology Division 314 Nishisangao, Noda, Chiba 278-0015, Japan","institution_ids":["https://openalex.org/I864419238"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110019945","display_name":"Y. Shimanuki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I864419238","display_name":"Mitsubishi Materials (Japan)","ror":"https://ror.org/03p5evc41","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861","https://openalex.org/I864419238"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yasushi Shimanuki","raw_affiliation_strings":["Mitsubishi Materials Silicon Corporation, Technology Division 314 Nishisangao, Noda, Chiba 278-0015, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Mitsubishi Materials Silicon Corporation, Technology Division 314 Nishisangao, Noda, Chiba 278-0015, Japan","institution_ids":["https://openalex.org/I864419238"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":0.3439,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.63258347,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"41","issue":"Part 1, No. 2A","first_page":"464","last_page":"471"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.5116999745368958,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.5116999745368958,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11087","display_name":"Solidification and crystal growth phenomena","score":0.4708999991416931,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0020000000949949026,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/point-defects","display_name":"point defects","score":0.9509999752044678},{"id":"https://openalex.org/keywords/czochralski-silicon","display_name":"Czochralski silicon","score":0.8930000066757202},{"id":"https://openalex.org/keywords/silicon-crystals","display_name":"silicon crystals","score":0.7070000171661377},{"id":"https://openalex.org/keywords/computer-simulation","display_name":"computer simulation","score":0.5770000219345093},{"id":"https://openalex.org/keywords/crystal-defects","display_name":"crystal defects","score":0.5199999809265137}],"concepts":[{"id":"https://openalex.org/C2781285689","wikidata":"https://www.wikidata.org/wiki/Q21921428","display_name":"Crystal (programming language)","level":2,"score":0.7004005312919617},{"id":"https://openalex.org/C164675345","wikidata":"https://www.wikidata.org/wiki/Q898226","display_name":"Crystallographic defect","level":2,"score":0.6157130599021912},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6132926344871521},{"id":"https://openalex.org/C114221277","wikidata":"https://www.wikidata.org/wiki/Q899743","display_name":"Vacancy defect","level":2,"score":0.6123796105384827},{"id":"https://openalex.org/C2994547563","wikidata":"https://www.wikidata.org/wiki/Q594666","display_name":"Czochralski method","level":3,"score":0.5704189538955688},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.5613470077514648},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.5521902441978455},{"id":"https://openalex.org/C203036418","wikidata":"https://www.wikidata.org/wiki/Q284256","display_name":"Crystallization","level":2,"score":0.4935556650161743},{"id":"https://openalex.org/C26456737","wikidata":"https://www.wikidata.org/wiki/Q185154","display_name":"Crystal growth","level":2,"score":0.4858996272087097},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.4506525993347168},{"id":"https://openalex.org/C69357855","wikidata":"https://www.wikidata.org/wiki/Q163214","display_name":"Diffusion","level":2,"score":0.42938777804374695},{"id":"https://openalex.org/C41999313","wikidata":"https://www.wikidata.org/wiki/Q489328","display_name":"Molecular physics","level":1,"score":0.33257347345352173},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.25630664825439453},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.222890704870224},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.14382299780845642},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.09225240349769592},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/jjap.41.464","doi":"https://doi.org/10.1143/jjap.41.464","is_oa":false,"landing_page_url":"https://doi.org/10.1143/jjap.41.464","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2032699489","https://openalex.org/W2059074511","https://openalex.org/W2097963589","https://openalex.org/W2117401640"],"related_works":["https://openalex.org/W3033620484","https://openalex.org/W2133082578","https://openalex.org/W2032587034","https://openalex.org/W2945218593","https://openalex.org/W1979604286","https://openalex.org/W2891787758","https://openalex.org/W1981824039","https://openalex.org/W1969913946","https://openalex.org/W2021841669","https://openalex.org/W1997071295"],"abstract_inverted_index":{"Computer":[0],"Simulation":[1],"of":[2],"Point-Defect":[3],"Fields":[4],"and":[5],"Microdefect":[6],"Patterns":[7],"in":[8],"Czochralski-Grown":[9],"Si":[10],"Crystals,":[11],"Puzanov,":[12,18],"Nikolai":[13],"I.,":[14],"Eidenzon,":[15],"Anna":[16],"M.,":[17],"Dmitri":[19],"N.,":[20],"Furukawa,":[21],"Jun,":[22],"Harada,":[23],"Kazuhiro,":[24],"Ono,":[25],"Naoki,":[26],"Shimanuki,":[27],"Yasushi":[28]},"counts_by_year":[],"updated_date":"2026-09-25T08:18:29.962427","created_date":"2016-06-24T00:00:00"}