{"id":"https://openalex.org/W2011820941","doi":"https://doi.org/10.1116/1.583247","title":"Submicrometer FET gate fabrication using resistless and focused ion beam techniques","display_name":"Submicrometer FET gate fabrication using resistless and focused ion beam techniques","publication_year":1985,"publication_date":"1985-01-01","ids":{"openalex":"https://openalex.org/W2011820941","doi":"https://doi.org/10.1116/1.583247","mag":"2011820941"},"language":"en","primary_location":{"id":"doi:10.1116/1.583247","doi":"https://doi.org/10.1116/1.583247","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.583247","pdf_url":null,"source":{"id":"https://openalex.org/S4210191927","display_name":"Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena","issn_l":"0734-211X","issn":["0734-211X","2327-9877"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320061","host_organization_name":"AIP Publishing","host_organization_lineage":["https://openalex.org/P4310320061","https://openalex.org/P4310320257"],"host_organization_lineage_names":["AIP Publishing","American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5069628633","display_name":"David B. Rensch","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"David B. Rensch","raw_affiliation_strings":["Hughes Research Laboratories, Malibu, California 90265"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hughes Research Laboratories, Malibu, California 90265","institution_ids":["https://openalex.org/I200576644"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018878130","display_name":"John Y. Chen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"John Y. Chen","raw_affiliation_strings":["Hughes Research Laboratories, Malibu, California 90265"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hughes Research Laboratories, Malibu, California 90265","institution_ids":["https://openalex.org/I200576644"]}]},{"author_position":"middle","author":{"id":null,"display_name":"William M. Clark","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"William M. Clark","raw_affiliation_strings":["Hughes Research Laboratories, Malibu, California 90265"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hughes Research Laboratories, Malibu, California 90265","institution_ids":["https://openalex.org/I200576644"]}]},{"author_position":"last","author":{"id":null,"display_name":"M. DuChesne Courtney","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. DuChesne Courtney","raw_affiliation_strings":["Hughes Research Laboratories, Malibu, California 90265"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hughes Research Laboratories, Malibu, California 90265","institution_ids":["https://openalex.org/I200576644"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I200576644"],"apc_list":null,"apc_paid":null,"fwci":0.5426,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.62738443,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"3","issue":"1","first_page":"286","last_page":"289"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.6782000064849854,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.6782000064849854,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.2240999937057495,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.04780000075697899,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/focused-ion-beam-lithography","display_name":"focused ion beam lithography","score":0.8669999837875366},{"id":"https://openalex.org/keywords/ion-implantation","display_name":"ion implantation","score":0.7239999771118164},{"id":"https://openalex.org/keywords/liquid-metal-ion-source","display_name":"liquid metal ion source","score":0.6290000081062317},{"id":"https://openalex.org/keywords/gate-oxide-thickness","display_name":"gate oxide thickness","score":0.8130000233650208},{"id":"https://openalex.org/keywords/transconductance","display_name":"transconductance","score":0.8679999709129333}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7621468305587769},{"id":"https://openalex.org/C53524968","wikidata":"https://www.wikidata.org/wiki/Q7315582","display_name":"Resist","level":3,"score":0.732197642326355},{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.7034784555435181},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.6407760977745056},{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.6212595701217651},{"id":"https://openalex.org/C204223013","wikidata":"https://www.wikidata.org/wiki/Q133036","display_name":"Lithography","level":2,"score":0.5824251770973206},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.5821976065635681},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5651407837867737},{"id":"https://openalex.org/C105487726","wikidata":"https://www.wikidata.org/wiki/Q622938","display_name":"Photolithography","level":2,"score":0.5263584852218628},{"id":"https://openalex.org/C161866238","wikidata":"https://www.wikidata.org/wiki/Q258563","display_name":"Focused ion beam","level":3,"score":0.4195462465286255},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.40207362174987793},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.37722405791282654},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.23344531655311584},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1539861261844635},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.1020737886428833},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.08984693884849548},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0535714328289032},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1116/1.583247","doi":"https://doi.org/10.1116/1.583247","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.583247","pdf_url":null,"source":{"id":"https://openalex.org/S4210191927","display_name":"Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena","issn_l":"0734-211X","issn":["0734-211X","2327-9877"],"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/P4310320061","host_organization_name":"AIP Publishing","host_organization_lineage":["https://openalex.org/P4310320061","https://openalex.org/P4310320257"],"host_organization_lineage_names":["AIP Publishing","American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2106482209","https://openalex.org/W1975389511","https://openalex.org/W2029364380","https://openalex.org/W1979107769","https://openalex.org/W2021828226","https://openalex.org/W2122966751","https://openalex.org/W1991308296","https://openalex.org/W2079462616","https://openalex.org/W2063166277","https://openalex.org/W2765341086"],"abstract_inverted_index":{"We":[0,69],"report":[1],"using":[2,72,104],"a":[3,24,64,86],"focused":[4,46],"ion":[5,61],"beam":[6],"lithography,":[7],"without":[8],"the":[9,80,98],"use":[10],"of":[11,21,48,114],"organic":[12],"resists,":[13],"to":[14,37,83],"produce":[15],"submicrometer":[16],"gates.":[17],"Refractory":[18],"metal":[19,60],"gates":[20,103],"WTi,":[22],"with":[23,34,97],"minimum":[25],"length":[26],"near":[27],"0.1":[28],"\u03bcm,":[29,39],"and":[30,63,75,100,107,116,125],"p-type":[31,101],"polysilicon":[32],"gates,":[33],"lengths":[35,121],"down":[36],"0.5":[38],"were":[40,95,134],"fabricated.":[41],"The":[42,119],"gate":[43,81,91,111,120],"lithography":[44],"utilizes":[45],"beams":[47],"Si++":[49],"or":[50,56],"B+":[51],"ions":[52],"produced":[53],"from":[54],"Au\u2013Si":[55],"B\u2013Pt":[57],"alloy":[58],"liquid":[59],"sources":[62],"three-lens":[65],"mass-separating":[66],"focusing":[67],"column.":[68],"found":[70],"that":[71],"proper":[73],"implant":[74],"subsequent":[76],"etch":[77],"conditions":[78],"causes":[79],"material":[82],"behave":[84],"as":[85,129,131],"negative":[87],"resist":[88],"thus":[89],"enabling":[90],"definition.":[92],"NMOS":[93],"FET\u2019s":[94],"fabricated":[96],"WTi":[99],"Si":[102],"these":[105,108],"techniques":[106],"devices":[109],"had":[110],"oxide":[112],"thicknesses":[113],"38":[115],"\u223c13":[117],"nm.":[118],"varied":[122],"between":[123],"2.0":[124],"0.15":[126],"\u03bcm.":[127],"Transconductances":[128],"large":[130],"180":[132],"mS/mm":[133],"obtained.":[135]},"counts_by_year":[],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2016-06-24T00:00:00"}