{"id":"https://openalex.org/W2011198261","doi":"https://doi.org/10.1063/1.119952","title":"Subpicosecond carrier lifetime in beryllium-doped InGaAsP grown by He-plasma-assisted molecular beam epitaxy","display_name":"Subpicosecond carrier lifetime in beryllium-doped InGaAsP grown by He-plasma-assisted molecular beam epitaxy","publication_year":1997,"publication_date":"1997-09-15","ids":{"openalex":"https://openalex.org/W2011198261","doi":"https://doi.org/10.1063/1.119952","mag":"2011198261"},"language":"en","primary_location":{"id":"doi:10.1063/1.119952","doi":"https://doi.org/10.1063/1.119952","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.119952","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100330371","display_name":"Li Qian","orcid":"https://orcid.org/0000-0001-6424-7158","observed_orcids":["https://orcid.org/0000-0001-6424-7158"]},"institutions":[{"id":"https://openalex.org/I185261750","display_name":"University of Toronto","ror":"https://ror.org/03dbr7087","country_code":"CA","type":"education","lineage":["https://openalex.org/I185261750"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"Li Qian","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Toronto, Ontario Laser and Lightwave Research Centre, Toronto, Ontario M5S 3G4, Canada"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Toronto, Ontario Laser and Lightwave Research Centre, Toronto, Ontario M5S 3G4, Canada","institution_ids":["https://openalex.org/I185261750"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002092477","display_name":"Seldon D. Benjamin","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I185261750","display_name":"University of Toronto","ror":"https://ror.org/03dbr7087","country_code":"CA","type":"education","lineage":["https://openalex.org/I185261750"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"S. D. Benjamin","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Toronto, Ontario Laser and Lightwave Research Centre, Toronto, Ontario M5S 3G4, Canada"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Toronto, Ontario Laser and Lightwave Research Centre, Toronto, Ontario M5S 3G4, Canada","institution_ids":["https://openalex.org/I185261750"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113653176","display_name":"P. W. E. Smith","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I185261750","display_name":"University of Toronto","ror":"https://ror.org/03dbr7087","country_code":"CA","type":"education","lineage":["https://openalex.org/I185261750"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"P. W. E. Smith","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Toronto, Ontario Laser and Lightwave Research Centre, Toronto, Ontario M5S 3G4, Canada"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Toronto, Ontario Laser and Lightwave Research Centre, Toronto, Ontario M5S 3G4, Canada","institution_ids":["https://openalex.org/I185261750"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111656472","display_name":"Brad J. Robinson","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98251732","display_name":"McMaster University","ror":"https://ror.org/02fa3aq29","country_code":"CA","type":"education","lineage":["https://openalex.org/I98251732"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"B. J. Robinson","raw_affiliation_strings":["Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S 4L7, Canada"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S 4L7, Canada","institution_ids":["https://openalex.org/I98251732"]}]},{"author_position":"last","author":{"id":null,"display_name":"D. A. Thompson","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98251732","display_name":"McMaster University","ror":"https://ror.org/02fa3aq29","country_code":"CA","type":"education","lineage":["https://openalex.org/I98251732"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"D. A. Thompson","raw_affiliation_strings":["Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S 4L7, Canada"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre for Electrophotonic Materials and Devices, McMaster University, Hamilton, Ontario L8S 4L7, Canada","institution_ids":["https://openalex.org/I98251732"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":4.327,"has_fulltext":false,"cited_by_count":39,"citation_normalized_percentile":{"value":0.93621714,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"71","issue":"11","first_page":"1513","last_page":"1515"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.4207000136375427,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.4207000136375427,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.22779999673366547,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.10719999670982361,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ingaasp","display_name":"InGaAsP","score":0.8669999837875366},{"id":"https://openalex.org/keywords/beryllium-doping","display_name":"beryllium doping","score":0.9919999837875366},{"id":"https://openalex.org/keywords/carrier-lifetime","display_name":"carrier lifetime","score":0.9369999766349792},{"id":"https://openalex.org/keywords/deep-donor-levels","display_name":"deep donor levels","score":0.7289999723434448},{"id":"https://openalex.org/keywords/compensation","display_name":"compensation","score":0.44200000166893005},{"id":"https://openalex.org/keywords/trap-saturation","display_name":"trap saturation","score":0.8730000257492065},{"id":"https://openalex.org/keywords/photogenerated-carriers","display_name":"photoexcited carriers","score":0.8240000009536743},{"id":"https://openalex.org/keywords/absorption-edge","display_name":"absorption edge","score":0.875},{"id":"https://openalex.org/keywords/ultrafast-optical-switching","display_name":"ultrafast optical switching","score":0.9580000042915344}],"concepts":[{"id":"https://openalex.org/C506630978","wikidata":"https://www.wikidata.org/wiki/Q569","display_name":"Beryllium","level":2,"score":0.7477363348007202},{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.677242636680603},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.6589393615722656},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6452434659004211},{"id":"https://openalex.org/C160892712","wikidata":"https://www.wikidata.org/wiki/Q901559","display_name":"Fourier transform infrared spectroscopy","level":2,"score":0.5392841696739197},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5273279547691345},{"id":"https://openalex.org/C125287762","wikidata":"https://www.wikidata.org/wiki/Q1758948","display_name":"Absorption (acoustics)","level":2,"score":0.5095839500427246},{"id":"https://openalex.org/C198865614","wikidata":"https://www.wikidata.org/wiki/Q5046374","display_name":"Carrier lifetime","level":3,"score":0.4944753646850586},{"id":"https://openalex.org/C50792271","wikidata":"https://www.wikidata.org/wiki/Q332846","display_name":"Absorption edge","level":3,"score":0.4409814774990082},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.410527765750885},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.3190310597419739},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.2765916883945465},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2695557475090027},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.18964403867721558},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.14085975289344788},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.13248273730278015},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.119952","doi":"https://doi.org/10.1063/1.119952","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.119952","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1964811862","https://openalex.org/W1978504861","https://openalex.org/W2016079592","https://openalex.org/W2021830345","https://openalex.org/W2029758105","https://openalex.org/W2037885912","https://openalex.org/W2061804116","https://openalex.org/W2080219309","https://openalex.org/W2090022468","https://openalex.org/W2092410777","https://openalex.org/W2092821723","https://openalex.org/W2122230179"],"related_works":["https://openalex.org/W2132492030","https://openalex.org/W1515320151","https://openalex.org/W2098915433","https://openalex.org/W2037885912","https://openalex.org/W2113245676","https://openalex.org/W2317668625","https://openalex.org/W2080219309","https://openalex.org/W2049257369","https://openalex.org/W1540257433","https://openalex.org/W2462882866"],"abstract_inverted_index":{"The":[0,49,69,81,98],"carrier":[1,52,70,75,100],"dynamics":[2,101],"and":[3,15,27,102],"absorption":[4,32,86,105],"edges":[5,87],"of":[6,20,45,59],"InGaAsP":[7],"samples":[8,44],"grown":[9],"by":[10,65],"He-plasma-assisted":[11],"molecular":[12],"beam":[13],"epitaxy":[14],"doped":[16],"with":[17,73],"various":[18],"concentrations":[19,93],"beryllium":[21],"are":[22,41,54],"investigated":[23],"via":[24],"pump-probe":[25],"experiments":[26],"Fourier":[28],"transform":[29],"infrared":[30],"(FTIR)":[31],"spectroscopy.":[33],"Carrier":[34],"lifetimes":[35,53],"from":[36],"10":[37],"to":[38,56,78,95],"<1":[39],"ps":[40],"obtained":[42],"for":[43,91,112,117],"increasing":[46],"doping":[47,92],"concentrations.":[48],"reduced":[50],"in":[51,88,119],"attributed":[55],"Be":[57],"compensation":[58],"the":[60,66,103],"deep":[61],"donor":[62],"levels":[63],"introduced":[64],"He":[67],"plasma.":[68],"lifetime":[71],"increases":[72],"photogenerated":[74],"density":[76],"due":[77],"trap":[79],"saturation.":[80],"FTIR":[82],"results":[83],"reveal":[84],"sharp":[85],"this":[89,108],"material":[90,109],"up":[94],"1\u00d71018":[96],"cm\u22123.":[97],"fast":[99],"steep":[104],"edge":[106],"make":[107],"very":[110],"attractive":[111],"ultrafast":[113],"optical":[114],"switching":[115],"devices":[116],"use":[118],"high-speed":[120],"time-division-multiplexing":[121],"fiber":[122],"communication":[123],"systems.":[124]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}