{"id":"https://openalex.org/W2010831980","doi":"https://doi.org/10.1016/0022-3093(96)00016-6","title":"Enhancement of the deposition rate of a-Si:H by introduction of an electronegative molecule into a silane discharge","display_name":"Enhancement of the deposition rate of a-Si:H by introduction of an electronegative molecule into a silane discharge","publication_year":1996,"publication_date":"1996-05-01","ids":{"openalex":"https://openalex.org/W2010831980","doi":"https://doi.org/10.1016/0022-3093(96)00016-6","mag":"2010831980"},"language":"en","primary_location":{"id":"doi:10.1016/0022-3093(96)00016-6","doi":"https://doi.org/10.1016/0022-3093(96)00016-6","is_oa":false,"landing_page_url":"https://doi.org/10.1016/0022-3093(96)00016-6","pdf_url":null,"source":{"id":"https://openalex.org/S59020844","display_name":"Journal of Non-Crystalline Solids","issn_l":"0022-3093","issn":["0022-3093","1873-4812"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Non-Crystalline Solids","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5027119652","display_name":"T\u014dru IKEDA","orcid":"https://orcid.org/0000-0003-3566-503X","observed_orcids":["https://orcid.org/0000-0003-3566-503X"]},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"Toru Ikeda","raw_affiliation_strings":["Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060071355","display_name":"Ian S. Osborne","orcid":"https://orcid.org/0009-0005-9556-4494","observed_orcids":["https://orcid.org/0009-0005-9556-4494"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Ian S. Osborne","raw_affiliation_strings":["Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077688626","display_name":"Nobuhiro Hata","orcid":"https://orcid.org/0000-0002-8132-0895","observed_orcids":["https://orcid.org/0000-0002-8132-0895"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Nobuhiro Hata","raw_affiliation_strings":["Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5005997243","display_name":"Akihisa Matsuda","orcid":"https://orcid.org/0000-0002-6468-9375","observed_orcids":["https://orcid.org/0000-0002-6468-9375"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Akihisa Matsuda","raw_affiliation_strings":["Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":["https://openalex.org/A5027119652"],"corresponding_institution_ids":[],"apc_list":{"value":3380,"currency":"USD","value_usd":3380},"apc_paid":null,"fwci":0.9698,"has_fulltext":false,"cited_by_count":13,"citation_normalized_percentile":{"value":0.73858323,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"198-200","issue":null,"first_page":"987","last_page":"990"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10781","display_name":"Plasma Diagnostics and Applications","score":0.7387999892234802,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10781","display_name":"Plasma Diagnostics and Applications","score":0.7387999892234802,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.11140000075101852,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10642","display_name":"Plasma Applications and Diagnostics","score":0.03590000048279762,"subfield":{"id":"https://openalex.org/subfields/2741","display_name":"Radiology, Nuclear Medicine and Imaging"},"field":{"id":"https://openalex.org/fields/27","display_name":"Medicine"},"domain":{"id":"https://openalex.org/domains/4","display_name":"Health Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/hydrogenated-amorphous-silicon","display_name":"hydrogenated amorphous silicon","score":0.9869999885559082},{"id":"https://openalex.org/keywords/deposition-rate-enhancement","display_name":"deposition rate enhancement","score":0.7699999809265137},{"id":"https://openalex.org/keywords/dichlorosilane","display_name":"dichlorosilane","score":0.9700000286102295},{"id":"https://openalex.org/keywords/anions","display_name":"negative ions","score":0.6930000185966492},{"id":"https://openalex.org/keywords/electron-temperature","display_name":"electron temperature","score":0.8080000281333923},{"id":"https://openalex.org/keywords/plasma-potential","display_name":"plasma electric potential","score":0.7170000076293945},{"id":"https://openalex.org/keywords/optical-emission-spectroscopy","display_name":"optical emission spectroscopy","score":0.7860000133514404},{"id":"https://openalex.org/keywords/plasma-enhanced-chemical-vapor-deposition","display_name":"plasma-enhanced chemical vapor deposition","score":0.7599999904632568},{"id":"https://openalex.org/keywords/powder-formation","display_name":"powder formation","score":0.6710000038146973}],"concepts":[{"id":"https://openalex.org/C2779523567","wikidata":"https://www.wikidata.org/wiki/Q418556","display_name":"Dichlorosilane","level":3,"score":0.9811014533042908},{"id":"https://openalex.org/C2778024649","wikidata":"https://www.wikidata.org/wiki/Q410572","display_name":"Silane","level":2,"score":0.9449293613433838},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.6756053566932678},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5971018671989441},{"id":"https://openalex.org/C172120300","wikidata":"https://www.wikidata.org/wiki/Q1134348","display_name":"Volumetric flow rate","level":2,"score":0.5833507776260376},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.5718590617179871},{"id":"https://openalex.org/C38347018","wikidata":"https://www.wikidata.org/wiki/Q905958","display_name":"Plasma-enhanced chemical vapor deposition","level":3,"score":0.5580259561538696},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.4902670681476593},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.4580378532409668},{"id":"https://openalex.org/C2776154250","wikidata":"https://www.wikidata.org/wiki/Q415811","display_name":"Germane","level":4,"score":0.44982945919036865},{"id":"https://openalex.org/C2778183973","wikidata":"https://www.wikidata.org/wiki/Q2476769","display_name":"Silanes","level":3,"score":0.44294896721839905},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4380350112915039},{"id":"https://openalex.org/C124681953","wikidata":"https://www.wikidata.org/wiki/Q339062","display_name":"Decomposition","level":2,"score":0.42350342869758606},{"id":"https://openalex.org/C2776390347","wikidata":"https://www.wikidata.org/wiki/Q474163","display_name":"Amorphous silicon","level":4,"score":0.41498565673828125},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.37565726041793823},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.32868197560310364},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.1055651605129242},{"id":"https://openalex.org/C2779667780","wikidata":"https://www.wikidata.org/wiki/Q18206302","display_name":"Crystalline silicon","level":3,"score":0.10532861948013306},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C550623735","wikidata":"https://www.wikidata.org/wiki/Q867","display_name":"Germanium","level":3,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/0022-3093(96)00016-6","doi":"https://doi.org/10.1016/0022-3093(96)00016-6","is_oa":false,"landing_page_url":"https://doi.org/10.1016/0022-3093(96)00016-6","pdf_url":null,"source":{"id":"https://openalex.org/S59020844","display_name":"Journal of Non-Crystalline Solids","issn_l":"0022-3093","issn":["0022-3093","1873-4812"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Non-Crystalline Solids","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1983336256","https://openalex.org/W1996435477","https://openalex.org/W2004961340","https://openalex.org/W2073711492","https://openalex.org/W2078183599"],"related_works":["https://openalex.org/W2078183599","https://openalex.org/W2104440362","https://openalex.org/W2090550466","https://openalex.org/W2041477454","https://openalex.org/W2079855886","https://openalex.org/W2013996497","https://openalex.org/W2086916135","https://openalex.org/W2088141525","https://openalex.org/W2083431783","https://openalex.org/W2071788567"],"abstract_inverted_index":null,"counts_by_year":[{"year":2015,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-09-21T07:43:02.447757","created_date":"2016-06-24T00:00:00"}