{"id":"https://openalex.org/W2010780476","doi":"https://doi.org/10.1109/55.936343","title":"300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V","display_name":"300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V","publication_year":2001,"publication_date":"2001-08-01","ids":{"openalex":"https://openalex.org/W2010780476","doi":"https://doi.org/10.1109/55.936343","mag":"2010780476"},"language":"en","primary_location":{"id":"doi:10.1109/55.936343","doi":"https://doi.org/10.1109/55.936343","is_oa":false,"landing_page_url":"https://doi.org/10.1109/55.936343","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5074753678","display_name":"M.W. Dvorak","orcid":"https://orcid.org/0000-0002-9245-1639","observed_orcids":["https://orcid.org/0000-0002-9245-1639"]},"institutions":[{"id":"https://openalex.org/I18014758","display_name":"Simon Fraser University","ror":"https://ror.org/0213rcc28","country_code":"CA","type":"education","lineage":["https://openalex.org/I18014758"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"M.W. Dvorak","raw_affiliation_strings":["School of Engineering Science, Department of Physics, Simon Fraser University, Burnaby, BC, Canada"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Engineering Science, Department of Physics, Simon Fraser University, Burnaby, BC, Canada","institution_ids":["https://openalex.org/I18014758"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008672841","display_name":"C. R. Bolognesi","orcid":"https://orcid.org/0000-0002-5651-4532","observed_orcids":["https://orcid.org/0000-0002-5651-4532"]},"institutions":[{"id":"https://openalex.org/I18014758","display_name":"Simon Fraser University","ror":"https://ror.org/0213rcc28","country_code":"CA","type":"education","lineage":["https://openalex.org/I18014758"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"C.R. Bolognesi","raw_affiliation_strings":["School of Engineering Science, Department of Physics, Simon Fraser University, Burnaby, BC, Canada"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Engineering Science, Department of Physics, Simon Fraser University, Burnaby, BC, Canada","institution_ids":["https://openalex.org/I18014758"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065388789","display_name":"Oliver J. Pitts","orcid":"https://orcid.org/0000-0002-5740-9443","observed_orcids":["https://orcid.org/0000-0002-5740-9443"]},"institutions":[{"id":"https://openalex.org/I18014758","display_name":"Simon Fraser University","ror":"https://ror.org/0213rcc28","country_code":"CA","type":"education","lineage":["https://openalex.org/I18014758"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"O.J. Pitts","raw_affiliation_strings":["School of Engineering Science, Department of Physics, Simon Fraser University, Burnaby, BC, Canada"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Engineering Science, Department of Physics, Simon Fraser University, Burnaby, BC, Canada","institution_ids":["https://openalex.org/I18014758"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5021128859","display_name":"Simon P Watkins","orcid":"https://orcid.org/0000-0002-7359-0721","observed_orcids":["https://orcid.org/0000-0002-7359-0721"]},"institutions":[{"id":"https://openalex.org/I18014758","display_name":"Simon Fraser University","ror":"https://ror.org/0213rcc28","country_code":"CA","type":"education","lineage":["https://openalex.org/I18014758"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"S.P. Watkins","raw_affiliation_strings":["School of Engineering Science, Department of Physics, Simon Fraser University, Burnaby, BC, Canada"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Engineering Science, Department of Physics, Simon Fraser University, Burnaby, BC, Canada","institution_ids":["https://openalex.org/I18014758"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I18014758"],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":20.8264,"has_fulltext":false,"cited_by_count":182,"citation_normalized_percentile":{"value":0.99670438,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":99},"biblio":{"volume":"22","issue":"8","first_page":"361","last_page":"363"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9086999893188477,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9086999893188477,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.039799999445676804,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.009800000116229057,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/double-heterojunction-bipolar-transistors","display_name":"double heterojunction bipolar transistors","score":0.9599999785423279},{"id":"https://openalex.org/keywords/npn-transistors","display_name":"NPN transistors","score":0.6890000104904175},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"breakdown voltage","score":0.8109999895095825},{"id":"https://openalex.org/keywords/mocvd-growth","display_name":"MOCVD growth","score":0.6840000152587891},{"id":"https://openalex.org/keywords/high-electron-mobility-transistors","display_name":"high electron mobility transistors","score":0.5659999847412109}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7325962781906128},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6500824689865112},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.6332899928092957},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.6203967928886414},{"id":"https://openalex.org/C2776152967","wikidata":"https://www.wikidata.org/wiki/Q416291","display_name":"Indium phosphide","level":3,"score":0.6061168909072876},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.5954734683036804},{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.544510006904602},{"id":"https://openalex.org/C27067764","wikidata":"https://www.wikidata.org/wiki/Q528769","display_name":"Conduction band","level":3,"score":0.528342604637146},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.5121254920959473},{"id":"https://openalex.org/C9930424","wikidata":"https://www.wikidata.org/wiki/Q7426587","display_name":"Saturation (graph theory)","level":2,"score":0.449648916721344},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.36958545446395874},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.365985631942749},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.32081466913223267},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.16861507296562195},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.15879768133163452},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1505117416381836},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.08695554733276367},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C114614502","wikidata":"https://www.wikidata.org/wiki/Q76592","display_name":"Combinatorics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/55.936343","doi":"https://doi.org/10.1109/55.936343","is_oa":false,"landing_page_url":"https://doi.org/10.1109/55.936343","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},{"id":"mag:2188438669","doi":null,"is_oa":false,"landing_page_url":"http://ieeexplore.ieee.org/iel5/55/20273/00936343.pdf","pdf_url":null,"source":null,"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1589628775","https://openalex.org/W1627286237","https://openalex.org/W1965255746","https://openalex.org/W1975034260","https://openalex.org/W1976218071","https://openalex.org/W1982184877","https://openalex.org/W1983821985","https://openalex.org/W1993902847","https://openalex.org/W2032065400","https://openalex.org/W2032226849","https://openalex.org/W2039923701","https://openalex.org/W2062924739","https://openalex.org/W2078933321","https://openalex.org/W2113769048","https://openalex.org/W2136392091","https://openalex.org/W2542280716","https://openalex.org/W3216664630"],"related_works":["https://openalex.org/W2099689722","https://openalex.org/W1993918690","https://openalex.org/W2542280716","https://openalex.org/W2029934213","https://openalex.org/W1558777550","https://openalex.org/W2108120286","https://openalex.org/W1521822122","https://openalex.org/W1937734479","https://openalex.org/W2044665160","https://openalex.org/W2038441349"],"abstract_inverted_index":{"We":[0],"report":[1],"MOCVD-grown":[2],"NpN":[3],"InP/GaAsSb/InP":[4],"abrupt":[5],"double":[6],"heterojunction":[7],"bipolar":[8],"transistors":[9],"(DHBTs)":[10],"with":[11,123],"simultaneous":[12],"values":[13],"of":[14,44,74,98,108],"f/sub":[15,18,124],"T/":[16],"and":[17,102],"MAX/":[19],"as":[20,22],"high":[21],"300":[23],"GHz":[24,126],"for":[25],"J/sub":[26,128],"C/=410":[27],"kA/cm/sup":[28,130],"2/":[29],"at":[30,119,127],"V/sub":[31],"CE/=1.8":[32],"V.":[33],"The":[34,88],"devices":[35],"maintain":[36],"outstanding":[37],"dynamic":[38],"performances":[39],"over":[40],"a":[41,103],"wide":[42],"range":[43],"biases":[45],"including":[46],"the":[47,54,65,72,79],"saturation":[48],"mode.":[49],"In":[50],"this":[51],"material":[52],"system":[53],"p+":[55],"GaAsSb":[56],"base":[57],"conduction":[58,68],"band":[59],"edge":[60],"lies":[61],"0.10-0.15":[62],"eV":[63],"above":[64],"InP":[66,92],"collector":[67,93,105],"band,":[69],"thus":[70],"favoring":[71],"use":[73],"nongraded":[75],"base-collector":[76],"designs":[77],"without":[78],"current":[80],"blocking":[81],"effect":[82],"found":[83],"in":[84],"conventional":[85],"InP/GaInAs-based":[86],"DHBTs.":[87],"2000":[89],"/spl":[90,109,114],"Aring/":[91,115],"provides":[94],"good":[95],"breakdown":[96],"voltages":[97],"BV/sub":[99],"CEO/=6":[100],"V":[101],"small":[104],"signal":[106],"delay":[107],"sim/0.23":[110],"ps.":[111],"Thinner":[112],"1500":[113],"collectors":[116],"allow":[117],"operation":[118],"still":[120],"higher":[121],"currents":[122],"T/>200":[125],"C/=650":[129],"2/.":[131]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":4},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":5},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":8}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2016-06-24T00:00:00"}