{"id":"https://openalex.org/W2010774256","doi":"https://doi.org/10.1116/1.578783","title":"Pregrowth treatment dependence of surface morphology for GaAs grown on exactly oriented (111)A substrates by molecular-beam epitaxy","display_name":"Pregrowth treatment dependence of surface morphology for GaAs grown on exactly oriented (111)A substrates by molecular-beam epitaxy","publication_year":1993,"publication_date":"1993-05-01","ids":{"openalex":"https://openalex.org/W2010774256","doi":"https://doi.org/10.1116/1.578783","mag":"2010774256"},"language":"en","primary_location":{"id":"doi:10.1116/1.578783","doi":"https://doi.org/10.1116/1.578783","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.578783","pdf_url":null,"source":{"id":"https://openalex.org/S4210190837","display_name":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","issn_l":"0734-2101","issn":["0734-2101","1520-8559"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109185590","display_name":"Teiji Yamamoto","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210104143","display_name":"Advanced Telecommunications Research Institute International","ror":"https://ror.org/01pe1d703","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210104143"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Teiji Yamamoto","raw_affiliation_strings":["ATR Optical and Radio Communications Research Laboratories, Seika-cho, Soraku-gun, Kyoto 619-02, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ATR Optical and Radio Communications Research Laboratories, Seika-cho, Soraku-gun, Kyoto 619-02, Japan","institution_ids":["https://openalex.org/I4210104143"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Makoto Inai","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210104143","display_name":"Advanced Telecommunications Research Institute International","ror":"https://ror.org/01pe1d703","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210104143"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Makoto Inai","raw_affiliation_strings":["ATR Optical and Radio Communications Research Laboratories, Seika-cho, Soraku-gun, Kyoto 619-02, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ATR Optical and Radio Communications Research Laboratories, Seika-cho, Soraku-gun, Kyoto 619-02, Japan","institution_ids":["https://openalex.org/I4210104143"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109182263","display_name":"T. Takebe","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210104143","display_name":"Advanced Telecommunications Research Institute International","ror":"https://ror.org/01pe1d703","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210104143"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Toshihiko Takebe","raw_affiliation_strings":["ATR Optical and Radio Communications Research Laboratories, Seika-cho, Soraku-gun, Kyoto 619-02, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ATR Optical and Radio Communications Research Laboratories, Seika-cho, Soraku-gun, Kyoto 619-02, Japan","institution_ids":["https://openalex.org/I4210104143"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5027649930","display_name":"Toshihide WATANABE","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210104143","display_name":"Advanced Telecommunications Research Institute International","ror":"https://ror.org/01pe1d703","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210104143"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Toshihide Watanabe","raw_affiliation_strings":["ATR Optical and Radio Communications Research Laboratories, Seika-cho, Soraku-gun, Kyoto 619-02, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ATR Optical and Radio Communications Research Laboratories, Seika-cho, Soraku-gun, Kyoto 619-02, Japan","institution_ids":["https://openalex.org/I4210104143"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210104143"],"apc_list":null,"apc_paid":null,"fwci":6.379,"has_fulltext":false,"cited_by_count":40,"citation_normalized_percentile":{"value":0.97997395,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"11","issue":"3","first_page":"631","last_page":"636"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.6689000129699707,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.6689000129699707,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.1428000032901764,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.08060000091791153,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"GaAs","score":0.8759999871253967},{"id":"https://openalex.org/keywords/surface-morphology","display_name":"surface morphology","score":0.8820000290870667},{"id":"https://openalex.org/keywords/etching","display_name":"etching","score":0.550000011920929},{"id":"https://openalex.org/keywords/surface-stoichiometry","display_name":"surface stoichiometry","score":0.8289999961853027},{"id":"https://openalex.org/keywords/surface-roughness","display_name":"surface roughness","score":0.847000002861023}],"concepts":[{"id":"https://openalex.org/C499950583","wikidata":"https://www.wikidata.org/wiki/Q183252","display_name":"Morphology (biology)","level":2,"score":0.7640142440795898},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.7459262609481812},{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.7020668983459473},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.6612994074821472},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6487343311309814},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.6455078125},{"id":"https://openalex.org/C144082473","wikidata":"https://www.wikidata.org/wiki/Q213185","display_name":"Stoichiometry","level":2,"score":0.6298871040344238},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.594405472278595},{"id":"https://openalex.org/C71039073","wikidata":"https://www.wikidata.org/wiki/Q3439090","display_name":"Surface finish","level":2,"score":0.5429679155349731},{"id":"https://openalex.org/C107365816","wikidata":"https://www.wikidata.org/wiki/Q114817","display_name":"Surface roughness","level":2,"score":0.5313416719436646},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4308048188686371},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.37481480836868286},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2911648750305176},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.26244163513183594},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.22622808814048767},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.08305981755256653},{"id":"https://openalex.org/C54355233","wikidata":"https://www.wikidata.org/wiki/Q7162","display_name":"Genetics","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1116/1.578783","doi":"https://doi.org/10.1116/1.578783","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.578783","pdf_url":null,"source":{"id":"https://openalex.org/S4210190837","display_name":"Journal of Vacuum Science & Technology A Vacuum Surfaces and Films","issn_l":"0734-2101","issn":["0734-2101","1520-8559"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320325282","display_name":"Murata Science Foundation","ror":"https://ror.org/04hd8bd67"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2001571900","https://openalex.org/W2765574982","https://openalex.org/W1992972137","https://openalex.org/W2040736909","https://openalex.org/W2036758062","https://openalex.org/W2006466306","https://openalex.org/W1966274789","https://openalex.org/W1987193411","https://openalex.org/W4210725887","https://openalex.org/W4205222344"],"abstract_inverted_index":{"We":[0],"investigate":[1],"the":[2,47,62,92,102],"dependence":[3],"of":[4,26,46],"growth":[5,29,76],"layer":[6,30],"surface":[7,10,24,48,56,103],"morphology":[8,25,57],"on":[9,31,42,61],"treatment":[11],"processes,":[12],"i.e.,":[13],"etching,":[14],"mounting,":[15],"and":[16,44,82,105],"loading":[17],"wafers":[18,67],"before":[19,49],"molecular-beam":[20],"epitaxial":[21],"growth.":[22,50],"The":[23],"a":[27,54,75],"GaAs":[28,35,66],"exactly":[32,63],"oriented":[33,64],"(111)A":[34,65,97],"is":[36,87],"found":[37],"to":[38,90],"be":[39],"strongly":[40],"dependent":[41],"stoichiometry":[43,104],"roughness":[45],"Device-quality":[51],"layers":[52],"with":[53,69,78,96],"good":[55],"were":[58],"obtained":[59],"only":[60],"etched":[68],"NH4OH:H2O2:H2O":[70],"(2:1:96)":[71,95],"etchant,":[72],"loaded":[73],"into":[74],"chamber":[77],"little":[79],"residual":[80],"As4,":[81],"mounted":[83],"without":[84],"In.":[85],"It":[86],"very":[88],"important":[89],"use":[91],"NH4OH":[93],"etchant":[94],"GaAs,":[98],"because":[99],"it":[100],"maintains":[101],"smoothness.":[106]},"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2016,"cited_by_count":1}],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2016-06-24T00:00:00"}