{"id":"https://openalex.org/W2010579858","doi":"https://doi.org/10.1016/0022-0248(86)90522-1","title":"Fast Si sheet growth by the horizontal supported web technique","display_name":"Fast Si sheet growth by the horizontal supported web technique","publication_year":1986,"publication_date":"1986-12-01","ids":{"openalex":"https://openalex.org/W2010579858","doi":"https://doi.org/10.1016/0022-0248(86)90522-1","mag":"2010579858"},"language":"en","primary_location":{"id":"doi:10.1016/0022-0248(86)90522-1","doi":"https://doi.org/10.1016/0022-0248(86)90522-1","is_oa":false,"landing_page_url":"https://doi.org/10.1016/0022-0248(86)90522-1","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5020181522","display_name":"G. Hoyler","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1325886976","display_name":"Siemens (Germany)","ror":"https://ror.org/059mq0909","country_code":"DE","type":"company","lineage":["https://openalex.org/I1325886976"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"G. Hoyler","raw_affiliation_strings":["Siemens Research Laboratories, Otto-Hahn-Ring 6, D-8000 M\u00fcnchen 83, Fed. Rep. of Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Siemens Research Laboratories, Otto-Hahn-Ring 6, D-8000 M\u00fcnchen 83, Fed. Rep. of Germany","institution_ids":["https://openalex.org/I1325886976"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041297397","display_name":"R. Falckenberg","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1325886976","display_name":"Siemens (Germany)","ror":"https://ror.org/059mq0909","country_code":"DE","type":"company","lineage":["https://openalex.org/I1325886976"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"R. Falckenberg","raw_affiliation_strings":["Siemens Research Laboratories, Otto-Hahn-Ring 6, D-8000 M\u00fcnchen 83, Fed. Rep. of Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Siemens Research Laboratories, Otto-Hahn-Ring 6, D-8000 M\u00fcnchen 83, Fed. Rep. of Germany","institution_ids":["https://openalex.org/I1325886976"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083462166","display_name":"Josef Gabriel Grabmaier","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1325886976","display_name":"Siemens (Germany)","ror":"https://ror.org/059mq0909","country_code":"DE","type":"company","lineage":["https://openalex.org/I1325886976"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"J.G. Grabmaier","raw_affiliation_strings":["Siemens Research Laboratories, Otto-Hahn-Ring 6, D-8000 M\u00fcnchen 83, Fed. Rep. of Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Siemens Research Laboratories, Otto-Hahn-Ring 6, D-8000 M\u00fcnchen 83, Fed. Rep. of Germany","institution_ids":["https://openalex.org/I1325886976"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5029413942","display_name":"B. Freienstein","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1325886976","display_name":"Siemens (Germany)","ror":"https://ror.org/059mq0909","country_code":"DE","type":"company","lineage":["https://openalex.org/I1325886976"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"B. Freienstein","raw_affiliation_strings":["Siemens Research Laboratories, Otto-Hahn-Ring 6, D-8000 M\u00fcnchen 83, Fed. Rep. of Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Siemens Research Laboratories, Otto-Hahn-Ring 6, D-8000 M\u00fcnchen 83, Fed. Rep. of Germany","institution_ids":["https://openalex.org/I1325886976"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I1325886976"],"apc_list":{"value":3110,"currency":"USD","value_usd":3110},"apc_paid":null,"fwci":0.5259,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.66581234,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"79","issue":"1-3","first_page":"572","last_page":"577"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9955999851226807,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9955999851226807,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11087","display_name":"Solidification and crystal growth phenomena","score":0.003000000026077032,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-crystal-growth","display_name":"silicon crystal growth","score":0.6060000061988831},{"id":"https://openalex.org/keywords/crystalline-silicon-solar-cells","display_name":"crystalline silicon solar cells","score":0.6990000009536743},{"id":"https://openalex.org/keywords/low-cost-solar-cells","display_name":"low-cost solar cells","score":0.7229999899864197},{"id":"https://openalex.org/keywords/high-throughput-production","display_name":"high-throughput production","score":0.6899999976158142},{"id":"https://openalex.org/keywords/pulling-speed","display_name":"pulling speed","score":0.859000027179718},{"id":"https://openalex.org/keywords/sheet-thickness","display_name":"sheet thickness","score":0.6579999923706055},{"id":"https://openalex.org/keywords/solar-cell-efficiency","display_name":"solar cell efficiency","score":0.6349999904632568}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6706120371818542},{"id":"https://openalex.org/C203036418","wikidata":"https://www.wikidata.org/wiki/Q284256","display_name":"Crystallization","level":2,"score":0.6420248746871948},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6053678393363953},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.48414379358291626},{"id":"https://openalex.org/C2779667780","wikidata":"https://www.wikidata.org/wiki/Q18206302","display_name":"Crystalline silicon","level":3,"score":0.48098528385162354},{"id":"https://openalex.org/C140205800","wikidata":"https://www.wikidata.org/wiki/Q5860","display_name":"Carbon fibers","level":3,"score":0.47289860248565674},{"id":"https://openalex.org/C28719098","wikidata":"https://www.wikidata.org/wiki/Q44946","display_name":"Point (geometry)","level":2,"score":0.4436764717102051},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.3575359880924225},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.26142024993896484},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.17747467756271362},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.12350758910179138},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08599773049354553},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0667245090007782},{"id":"https://openalex.org/C104779481","wikidata":"https://www.wikidata.org/wiki/Q50707","display_name":"Composite number","level":2,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/0022-0248(86)90522-1","doi":"https://doi.org/10.1016/0022-0248(86)90522-1","is_oa":false,"landing_page_url":"https://doi.org/10.1016/0022-0248(86)90522-1","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.75,"display_name":"Affordable and clean energy"}],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320324232","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1981938759","https://openalex.org/W2015850864","https://openalex.org/W2032800800","https://openalex.org/W2077505233","https://openalex.org/W2087660374"],"related_works":["https://openalex.org/W1652797965","https://openalex.org/W141417998","https://openalex.org/W2506878759","https://openalex.org/W1673588085","https://openalex.org/W1921840109","https://openalex.org/W2128011397","https://openalex.org/W1978167098","https://openalex.org/W30149911","https://openalex.org/W1975684707","https://openalex.org/W2121037983"],"abstract_inverted_index":null,"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":1}],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}