{"id":"https://openalex.org/W2010515804","doi":"https://doi.org/10.1016/s0022-3093(00)00352-5","title":"The impact of the nitridation process on the properties of the Si\u2013SiO2 interface","display_name":"The impact of the nitridation process on the properties of the Si\u2013SiO2 interface","publication_year":2001,"publication_date":"2001-02-01","ids":{"openalex":"https://openalex.org/W2010515804","doi":"https://doi.org/10.1016/s0022-3093(00)00352-5","mag":"2010515804"},"language":"en","primary_location":{"id":"doi:10.1016/s0022-3093(00)00352-5","doi":"https://doi.org/10.1016/s0022-3093(00)00352-5","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0022-3093(00)00352-5","pdf_url":null,"source":{"id":"https://openalex.org/S59020844","display_name":"Journal of Non-Crystalline Solids","issn_l":"0022-3093","issn":["0022-3093","1873-4812"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Non-Crystalline Solids","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5029398783","display_name":"Maria Luisa Polignano","orcid":"https://orcid.org/0000-0001-5441-1022","observed_orcids":["https://orcid.org/0000-0001-5441-1022"]},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":true,"raw_author_name":"M.L. Polignano","raw_affiliation_strings":["ST Microelectronics, Via Olivette 2, 20041 Agrate Brianza Milan, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ST Microelectronics, Via Olivette 2, 20041 Agrate Brianza Milan, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":null,"display_name":"M. Alessandri","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"M. Alessandri","raw_affiliation_strings":["ST Microelectronics, Via Olivette 2, 20041 Agrate Brianza Milan, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ST Microelectronics, Via Olivette 2, 20041 Agrate Brianza Milan, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035368314","display_name":"Barbara Crivelli","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"B. Crivelli","raw_affiliation_strings":["ST Microelectronics, Via Olivette 2, 20041 Agrate Brianza Milan, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ST Microelectronics, Via Olivette 2, 20041 Agrate Brianza Milan, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083225583","display_name":"Romina Zonca","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210154781","display_name":"STMicroelectronics (Italy)","ror":"https://ror.org/053bqv655","country_code":"IT","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210154781"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"R. Zonca","raw_affiliation_strings":["ST Microelectronics, Via Olivette 2, 20041 Agrate Brianza Milan, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ST Microelectronics, Via Olivette 2, 20041 Agrate Brianza Milan, Italy","institution_ids":["https://openalex.org/I4210154781"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030550644","display_name":"A. P. Caricato","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"A.P. Caricato","raw_affiliation_strings":["INFM-MDM, 20041 Agrate Brianza Milan, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"INFM-MDM, 20041 Agrate Brianza Milan, Italy","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079814380","display_name":"Massimo Bersani","orcid":"https://orcid.org/0000-0003-4062-5286","observed_orcids":["https://orcid.org/0000-0003-4062-5286"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. Bersani","raw_affiliation_strings":["ITC-irst, 38050 Povo (Trento), Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ITC-irst, 38050 Povo (Trento), Italy","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039616036","display_name":"M. Sbetti","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. Sbetti","raw_affiliation_strings":["ITC-irst, 38050 Povo (Trento), Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ITC-irst, 38050 Povo (Trento), Italy","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5028147318","display_name":"L. Vanzetti","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"L. Vanzetti","raw_affiliation_strings":["ITC-irst, 38050 Povo (Trento), Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ITC-irst, 38050 Povo (Trento), Italy","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5029398783"],"corresponding_institution_ids":["https://openalex.org/I4210154781"],"apc_list":{"value":3380,"currency":"USD","value_usd":3380},"apc_paid":null,"fwci":0.801,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.73976005,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"280","issue":"1-3","first_page":"39","last_page":"47"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9848999977111816,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9848999977111816,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.0066999997943639755,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.004100000020116568,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/si-sio2-interface","display_name":"Si/SiO2 interface","score":0.8389999866485596},{"id":"https://openalex.org/keywords/surface-recombination-velocity","display_name":"surface recombination velocity","score":0.8519999980926514},{"id":"https://openalex.org/keywords/minority-carrier-lifetime","display_name":"minority carrier lifetime","score":0.828000009059906},{"id":"https://openalex.org/keywords/interface-state-density","display_name":"interface state density","score":0.7609999775886536},{"id":"https://openalex.org/keywords/n2o-nitridation","display_name":"N2O nitridation","score":0.9919999837875366},{"id":"https://openalex.org/keywords/n2-annealing","display_name":"N2 annealing","score":0.8339999914169312},{"id":"https://openalex.org/keywords/rapid-thermal-oxidation","display_name":"rapid thermal oxidation","score":0.7720000147819519},{"id":"https://openalex.org/keywords/rapid-thermal-nitridation","display_name":"rapid thermal nitridation","score":0.8600000143051147}],"concepts":[{"id":"https://openalex.org/C175708663","wikidata":"https://www.wikidata.org/wiki/Q899559","display_name":"X-ray photoelectron spectroscopy","level":2,"score":0.779575765132904},{"id":"https://openalex.org/C13862629","wikidata":"https://www.wikidata.org/wiki/Q720899","display_name":"Nitriding","level":3,"score":0.7561019659042358},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.7494118213653564},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.6117808818817139},{"id":"https://openalex.org/C77671233","wikidata":"https://www.wikidata.org/wiki/Q556046","display_name":"Secondary ion mass spectrometry","level":3,"score":0.6058498024940491},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.5605437159538269},{"id":"https://openalex.org/C537208039","wikidata":"https://www.wikidata.org/wiki/Q627","display_name":"Nitrogen","level":2,"score":0.5464339852333069},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5382717847824097},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.532258927822113},{"id":"https://openalex.org/C2779105228","wikidata":"https://www.wikidata.org/wiki/Q2286029","display_name":"Silicon oxide","level":4,"score":0.4677349030971527},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.31298917531967163},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.31106850504875183},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2803417444229126},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.24289649724960327},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.19853156805038452},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.1780795454978943},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17570942640304565},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.12611758708953857},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1016/s0022-3093(00)00352-5","doi":"https://doi.org/10.1016/s0022-3093(00)00352-5","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0022-3093(00)00352-5","pdf_url":null,"source":{"id":"https://openalex.org/S59020844","display_name":"Journal of Non-Crystalline Solids","issn_l":"0022-3093","issn":["0022-3093","1873-4812"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-1","norway-1","poland-70","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Non-Crystalline Solids","raw_type":"journal-article"},{"id":"pmh:oai:iris.unisalento.it:11587/107024","doi":null,"is_oa":false,"landing_page_url":"http://hdl.handle.net/11587/107024","pdf_url":null,"source":{"id":"https://openalex.org/S7407055257","display_name":"AIRUS","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"info:eu-repo/semantics/article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W125753325","https://openalex.org/W1488501388","https://openalex.org/W1984324013","https://openalex.org/W2026854929","https://openalex.org/W2034663159","https://openalex.org/W2038482556","https://openalex.org/W2052328608","https://openalex.org/W2060060520","https://openalex.org/W2062736185","https://openalex.org/W2070999600"],"related_works":["https://openalex.org/W2142911348","https://openalex.org/W2262062489","https://openalex.org/W2061420139","https://openalex.org/W2138386551","https://openalex.org/W7160853240","https://openalex.org/W1978940787","https://openalex.org/W2158601799","https://openalex.org/W7217216729","https://openalex.org/W1972901390","https://openalex.org/W2047014022"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2026-10-12T09:40:04.860316","created_date":"2016-06-24T00:00:00"}