{"id":"https://openalex.org/W2010451022","doi":"https://doi.org/10.1109/55.119161","title":"High-mobility modulation-doped SiGe-channel p-MOSFETs","display_name":"High-mobility modulation-doped SiGe-channel p-MOSFETs","publication_year":1991,"publication_date":"1991-08-01","ids":{"openalex":"https://openalex.org/W2010451022","doi":"https://doi.org/10.1109/55.119161","mag":"2010451022"},"language":"en","primary_location":{"id":"doi:10.1109/55.119161","doi":"https://doi.org/10.1109/55.119161","is_oa":false,"landing_page_url":"https://doi.org/10.1109/55.119161","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://research.tue.nl/en/publications/163b7870-f903-4dcd-aed1-32bbc416d2c0","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5063477901","display_name":"Sophie Verdonckt-Vandebroek","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Verdonckt-Vandebroek","raw_affiliation_strings":["IBM General Technology Division, East Fishkill, NY, USA","IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM General Technology Division, East Fishkill, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040713914","display_name":"Emmanuel F. Crabb\u00e9","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"E.F. Crabbe","raw_affiliation_strings":["IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023200609","display_name":"Bernard S. Meyerson","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"B.S. Meyerson","raw_affiliation_strings":["IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027533604","display_name":"David L. Harame","orcid":"https://orcid.org/0000-0002-4590-8114","observed_orcids":["https://orcid.org/0000-0002-4590-8114"]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D.L. Harame","raw_affiliation_strings":["IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054155143","display_name":"Phillip J. Restle","orcid":"https://orcid.org/0000-0002-3124-4265","observed_orcids":["https://orcid.org/0000-0002-3124-4265"]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P.J. Restle","raw_affiliation_strings":["IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037640771","display_name":"Johannes M. C. Stork","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J.M.C. Stork","raw_affiliation_strings":["IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035828162","display_name":"A.C. Megdanis","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A.C. Megdanis","raw_affiliation_strings":["IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001692894","display_name":"Carol L. Stanis","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C.L. Stanis","raw_affiliation_strings":["IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052941649","display_name":"A. A. Bright","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A.A. Bright","raw_affiliation_strings":["IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110145675","display_name":"Gerrit M. W. Kroesen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"G.M.W. Kroesen","raw_affiliation_strings":["IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5033474096","display_name":"A.C. Warren","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A.C. Warren","raw_affiliation_strings":["IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":9.4099,"has_fulltext":true,"cited_by_count":120,"citation_normalized_percentile":{"value":0.98498749,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"12","issue":"8","first_page":"447","last_page":"449"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9970999956130981,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.002300000051036477,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/p-mosfet","display_name":"pMOSFET","score":0.8799999952316284},{"id":"https://openalex.org/keywords/sige-channel","display_name":"SiGe channel","score":0.8539999723434448},{"id":"https://openalex.org/keywords/modulation-doping","display_name":"modulation doping","score":0.9649999737739563},{"id":"https://openalex.org/keywords/threshold-voltage-tuning","display_name":"threshold voltage control","score":0.8709999918937683},{"id":"https://openalex.org/keywords/transconductance","display_name":"transconductance","score":0.6660000085830688},{"id":"https://openalex.org/keywords/submicrometer-transistors","display_name":"submicrometer transistors","score":0.6970000267028809},{"id":"https://openalex.org/keywords/low-temperature-mobility","display_name":"low-temperature mobility","score":0.6179999709129333}],"concepts":[{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.9030135869979858},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.7318816184997559},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6654319763183594},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6405304670333862},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.6242706775665283},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.583757758140564},{"id":"https://openalex.org/C123079801","wikidata":"https://www.wikidata.org/wiki/Q750240","display_name":"Modulation (music)","level":2,"score":0.5412291288375854},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.509709358215332},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.47512322664260864},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4543924927711487},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.41884082555770874},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35326218605041504},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3385124206542969},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.17552345991134644},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.16460534930229187},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08456182479858398},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.0}],"mesh":[],"locations_count":6,"locations":[{"id":"doi:10.1109/55.119161","doi":"https://doi.org/10.1109/55.119161","is_oa":false,"landing_page_url":"https://doi.org/10.1109/55.119161","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},{"id":"pmh:oai:pure.tue.nl:openaire/163b7870-f903-4dcd-aed1-32bbc416d2c0","doi":null,"is_oa":true,"landing_page_url":"https://research.tue.nl/en/publications/163b7870-f903-4dcd-aed1-32bbc416d2c0","pdf_url":null,"source":{"id":"https://openalex.org/S4406922641","display_name":"TU/e Research Portal","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Verdonckt-Vandebroek, S, Crabbe, E F, Meyerson, B S, Harame, D L, Restle, P J, Stork, J M C, Megdanis, A C, Stanis, C L, Bright, A A, Kroesen, G M W & Warren, A C 1991, 'High-mobility modulation-doped graded SiGe-channel p-MOSFET's', IEEE Electron Device Letters, vol. 12, no. 8, pp. 447-449. https://doi.org/10.1109/55.119161","raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:684223","doi":null,"is_oa":false,"landing_page_url":"http://library.tue.nl/csp/dare/LinkToRepository.csp?recordnumber=684223","pdf_url":null,"source":{"id":"https://openalex.org/S4406922641","display_name":"TU/e Research Portal","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"ISSN:0741-3106","raw_type":"Article / Letter to the editor"},{"id":"pmh:oai:library.tue.nl:684223","doi":null,"is_oa":false,"landing_page_url":"http://repository.tue.nl/684223","pdf_url":null,"source":{"id":"https://openalex.org/S4406922641","display_name":"TU/e Research Portal","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"ISSN:0741-3106","raw_type":"Article / Letter to the editor"},{"id":"pmh:tue:oai:library.tue.nl:684223","doi":null,"is_oa":false,"landing_page_url":"http://repository.tue.nl/684223","pdf_url":null,"source":{"id":"https://openalex.org/S4406922641","display_name":"TU/e Research Portal","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Electron Device Letters, 12(8), 447","raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:tue:oai:pure.tue.nl:publications/163b7870-f903-4dcd-aed1-32bbc416d2c0","doi":null,"is_oa":true,"landing_page_url":"https://research.tue.nl/nl/publications/163b7870-f903-4dcd-aed1-32bbc416d2c0","pdf_url":null,"source":{"id":"https://openalex.org/S4406922641","display_name":"TU/e Research Portal","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Electron Device Letters, 12(8), 447 - 449. Institute of Electrical and Electronics Engineers","raw_type":"info:eu-repo/semantics/article"}],"best_oa_location":{"id":"pmh:oai:pure.tue.nl:openaire/163b7870-f903-4dcd-aed1-32bbc416d2c0","doi":null,"is_oa":true,"landing_page_url":"https://research.tue.nl/en/publications/163b7870-f903-4dcd-aed1-32bbc416d2c0","pdf_url":null,"source":{"id":"https://openalex.org/S4406922641","display_name":"TU/e Research Portal","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Verdonckt-Vandebroek, S, Crabbe, E F, Meyerson, B S, Harame, D L, Restle, P J, Stork, J M C, Megdanis, A C, Stanis, C L, Bright, A A, Kroesen, G M W & Warren, A C 1991, 'High-mobility modulation-doped graded SiGe-channel p-MOSFET's', IEEE Electron Device Letters, vol. 12, no. 8, pp. 447-449. https://doi.org/10.1109/55.119161","raw_type":"info:eu-repo/semantics/article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W2015873494","https://openalex.org/W2020974902","https://openalex.org/W2023259654","https://openalex.org/W2043971006","https://openalex.org/W2158594571","https://openalex.org/W2538078145","https://openalex.org/W3006332195"],"related_works":["https://openalex.org/W1490957097","https://openalex.org/W1992352882","https://openalex.org/W2158594571","https://openalex.org/W2171743727","https://openalex.org/W2070382711","https://openalex.org/W248926659","https://openalex.org/W2042934583","https://openalex.org/W2113456848","https://openalex.org/W165564467","https://openalex.org/W2468179927"],"abstract_inverted_index":{"A":[0,23,45],"novel":[1,24],"subsurface":[2],"SiGe-channel":[3],"p-MOSFET":[4],"is":[5,11,43,48],"demonstrated":[6],"in":[7,83],"which":[8],"modulation":[9,41],"doping":[10,42],"used":[12],"to":[13,57],"control":[14],"the":[15,20,51],"threshold":[16],"voltage":[17],"without":[18],"degrading":[19],"channel":[21,56],"mobility.":[22],"device":[25],"design":[26],"consisting":[27],"of":[28,67],"a":[29],"graded":[30,52],"SiGe":[31,55],"channel,":[32],"an":[33],"n/sup":[34],"+/":[35,40],"polysilicon":[36],"gate,":[37],"and":[38,53,61,74],"p/sup":[39],"used.":[44],"boron-doped":[46],"layer":[47],"located":[49],"underneath":[50],"undoped":[54],"minimize":[58],"process":[59],"sensitivity":[60],"maximize":[62],"transconductance.":[63],"Low-field":[64],"hole":[65],"mobilities":[66],"220":[68],"cm/sup":[69,76],"2//V-s":[70,77],"at":[71,78],"300":[72],"K":[73,80],"980":[75],"82":[79],"were":[81],"achieved":[82],"functional":[84],"submicrometer":[85],"p-MOSFETs.>":[86]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":1},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":4}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}