{"id":"https://openalex.org/W2010403190","doi":"https://doi.org/10.4028/www.scientific.net/msf.778-780.971","title":"Comparison of 600V Si, SiC and GaN Power Devices","display_name":"Comparison of 600V Si, SiC and GaN Power Devices","publication_year":2014,"publication_date":"2014-02-26","ids":{"openalex":"https://openalex.org/W2010403190","doi":"https://doi.org/10.4028/www.scientific.net/msf.778-780.971","mag":"2010403190"},"language":"en","primary_location":{"id":"doi:10.4028/www.scientific.net/msf.778-780.971","doi":"https://doi.org/10.4028/www.scientific.net/msf.778-780.971","is_oa":false,"landing_page_url":"https://doi.org/10.4028/www.scientific.net/msf.778-780.971","pdf_url":null,"source":{"id":"https://openalex.org/S87940674","display_name":"Materials science forum","issn_l":"0255-5476","issn":["0255-5476","1662-9752","1662-9760"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1","poland-20"],"host_organization":"https://openalex.org/P4310317839","host_organization_name":"Trans Tech Publications","host_organization_lineage":["https://openalex.org/P4310317839"],"host_organization_lineage_names":["Trans Tech Publications"],"type":"book series"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Science Forum","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5087357926","display_name":"Sauvik Chowdhury","orcid":"https://orcid.org/0000-0002-2708-4705","observed_orcids":["https://orcid.org/0000-0002-2708-4705"]},"institutions":[{"id":"https://openalex.org/I165799507","display_name":"Rensselaer Polytechnic Institute","ror":"https://ror.org/01rtyzb94","country_code":"US","type":"education","lineage":["https://openalex.org/I165799507"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Sauvik Chowdhury","raw_affiliation_strings":["Rensselaer Polytechnic Institute"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Rensselaer Polytechnic Institute","institution_ids":["https://openalex.org/I165799507"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109221938","display_name":"Zachary Stum","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1332737386","display_name":"General Electric (United States)","ror":"https://ror.org/013msgt25","country_code":"US","type":"company","lineage":["https://openalex.org/I1332737386"]},{"id":"https://openalex.org/I4210134512","display_name":"GE Global Research (United States)","ror":"https://ror.org/03e06qt98","country_code":"US","type":"company","lineage":["https://openalex.org/I4210134512"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Zachary Stum","raw_affiliation_strings":["General Electric Global Research"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"General Electric Global Research","institution_ids":["https://openalex.org/I1332737386","https://openalex.org/I4210134512"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064303809","display_name":"Zhong Da Li","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I165799507","display_name":"Rensselaer Polytechnic Institute","ror":"https://ror.org/01rtyzb94","country_code":"US","type":"education","lineage":["https://openalex.org/I165799507"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Zhong Da Li","raw_affiliation_strings":["Rensselaer Polytechnic Institute"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Rensselaer Polytechnic Institute","institution_ids":["https://openalex.org/I165799507"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101687362","display_name":"Katsunori Ueno","orcid":"https://orcid.org/0000-0002-6062-5761","observed_orcids":["https://orcid.org/0000-0002-6062-5761"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Katsunori Ueno","raw_affiliation_strings":["Advance Power Device Research Association"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advance Power Device Research Association","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5059828920","display_name":"T. Paul Chow","orcid":"https://orcid.org/0000-0002-1078-1707","observed_orcids":["https://orcid.org/0000-0002-1078-1707"]},"institutions":[{"id":"https://openalex.org/I165799507","display_name":"Rensselaer Polytechnic Institute","ror":"https://ror.org/01rtyzb94","country_code":"US","type":"education","lineage":["https://openalex.org/I165799507"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"T. Paul Chow","raw_affiliation_strings":["Rensselaer Polytechnic Institute"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Rensselaer Polytechnic Institute","institution_ids":["https://openalex.org/I165799507"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5087357926"],"corresponding_institution_ids":["https://openalex.org/I165799507"],"apc_list":null,"apc_paid":null,"fwci":0.6901,"has_fulltext":false,"cited_by_count":45,"citation_normalized_percentile":{"value":0.73572653,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":99},"biblio":{"volume":"778-780","issue":null,"first_page":"971","last_page":"974"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-power-devices","display_name":"silicon power devices","score":0.6029999852180481},{"id":"https://openalex.org/keywords/silicon-carbide-power-devices","display_name":"silicon carbide power devices","score":0.8460000157356262},{"id":"https://openalex.org/keywords/gallium-nitride-power-devices","display_name":"gallium nitride power devices","score":0.9929999709129333},{"id":"https://openalex.org/keywords/superjunction-mosfet","display_name":"superjunction MOSFET","score":0.9269999861717224},{"id":"https://openalex.org/keywords/field-stop-igbt","display_name":"field-stop IGBT","score":0.9340000152587891},{"id":"https://openalex.org/keywords/gan-hemt","display_name":"GaN HEMT","score":0.9940000176429749},{"id":"https://openalex.org/keywords/dc-performance","display_name":"DC performance","score":0.8349999785423279},{"id":"https://openalex.org/keywords/switching-performance","display_name":"switching performance","score":0.9509999752044678},{"id":"https://openalex.org/keywords/device-simulation","display_name":"device simulation","score":0.8040000200271606}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8724904656410217},{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.775862991809845},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7523304224014282},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6295746564865112},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5989546775817871},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.5638639330863953},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.551470160484314},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.5083815455436707},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.49543678760528564},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.43608349561691284},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.3895878195762634},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.37705469131469727},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1866247057914734},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.14909744262695312},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08626100420951843},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.05800914764404297},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.4028/www.scientific.net/msf.778-780.971","doi":"https://doi.org/10.4028/www.scientific.net/msf.778-780.971","is_oa":false,"landing_page_url":"https://doi.org/10.4028/www.scientific.net/msf.778-780.971","pdf_url":null,"source":{"id":"https://openalex.org/S87940674","display_name":"Materials science forum","issn_l":"0255-5476","issn":["0255-5476","1662-9752","1662-9760"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1","poland-20"],"host_organization":"https://openalex.org/P4310317839","host_organization_name":"Trans Tech Publications","host_organization_lineage":["https://openalex.org/P4310317839"],"host_organization_lineage_names":["Trans Tech Publications"],"type":"book series"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Science Forum","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2775248108","https://openalex.org/W2067620498","https://openalex.org/W2210065833","https://openalex.org/W4391043216","https://openalex.org/W2034525477","https://openalex.org/W7139498685","https://openalex.org/W2585548000","https://openalex.org/W2135482189","https://openalex.org/W2049642638","https://openalex.org/W2749564824"],"abstract_inverted_index":{"In":[0],"this":[1],"paper":[2],"the":[3],"DC":[4],"and":[5,12,32],"switching":[6],"performance":[7],"of":[8],"600V":[9],"Si,":[10],"SiC":[11,30],"GaN":[13,33],"power":[14],"devices":[15,20],"using":[16],"device":[17],"simulation.":[18],"The":[19],"compared":[21],"are":[22],"Si":[23,26],"superjunction":[24],"MOSFET,":[25],"field":[27],"stop":[28],"IGBT,":[29],"UMOSFET":[31],"HEMT.":[34]},"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":10},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":4},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":1}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}