{"id":"https://openalex.org/W2010399652","doi":"https://doi.org/10.1143/jjap.23.l342","title":"A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n+-Layer using MOCVD","display_name":"A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n+-Layer using MOCVD","publication_year":1984,"publication_date":"1984-05-01","ids":{"openalex":"https://openalex.org/W2010399652","doi":"https://doi.org/10.1143/jjap.23.l342","mag":"2010399652"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.23.l342","doi":"https://doi.org/10.1143/jjap.23.l342","is_oa":false,"landing_page_url":"https://doi.org/10.1143/jjap.23.l342","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"Kenichi Imamura","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2252096349","display_name":"Fujitsu (Japan)","ror":"https://ror.org/038e2g226","country_code":"JP","type":"company","lineage":["https://openalex.org/I2252096349"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kenichi Imamura","raw_affiliation_strings":["Fujitsu Laboratories Limited"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fujitsu Laboratories Limited","institution_ids":["https://openalex.org/I2252096349"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103004161","display_name":"Naoki Yokoyama","orcid":"https://orcid.org/0009-0002-2919-936X","observed_orcids":["https://orcid.org/0009-0002-2919-936X"]},"institutions":[{"id":"https://openalex.org/I2252096349","display_name":"Fujitsu (Japan)","ror":"https://ror.org/038e2g226","country_code":"JP","type":"company","lineage":["https://openalex.org/I2252096349"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Naoki Yokoyama","raw_affiliation_strings":["Fujitsu Laboratories Limited"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fujitsu Laboratories Limited","institution_ids":["https://openalex.org/I2252096349"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108497625","display_name":"Toyokazu Ohnishi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2252096349","display_name":"Fujitsu (Japan)","ror":"https://ror.org/038e2g226","country_code":"JP","type":"company","lineage":["https://openalex.org/I2252096349"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Toyokazu Ohnishi","raw_affiliation_strings":["Fujitsu Laboratories Limited"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fujitsu Laboratories Limited","institution_ids":["https://openalex.org/I2252096349"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110794188","display_name":"Shoichi Suzuki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2252096349","display_name":"Fujitsu (Japan)","ror":"https://ror.org/038e2g226","country_code":"JP","type":"company","lineage":["https://openalex.org/I2252096349"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shoichi Suzuki","raw_affiliation_strings":["Fujitsu Laboratories Limited"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fujitsu Laboratories Limited","institution_ids":["https://openalex.org/I2252096349"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102189292","display_name":"Kenya Nakai","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2252096349","display_name":"Fujitsu (Japan)","ror":"https://ror.org/038e2g226","country_code":"JP","type":"company","lineage":["https://openalex.org/I2252096349"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kenya Nakai","raw_affiliation_strings":["Fujitsu Laboratories Limited"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fujitsu Laboratories Limited","institution_ids":["https://openalex.org/I2252096349"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011408312","display_name":"H. Nishi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2252096349","display_name":"Fujitsu (Japan)","ror":"https://ror.org/038e2g226","country_code":"JP","type":"company","lineage":["https://openalex.org/I2252096349"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hidetoshi Nishi","raw_affiliation_strings":["Fujitsu Laboratories Limited"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fujitsu Laboratories Limited","institution_ids":["https://openalex.org/I2252096349"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110125111","display_name":"Akihiro Shibatomi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2252096349","display_name":"Fujitsu (Japan)","ror":"https://ror.org/038e2g226","country_code":"JP","type":"company","lineage":["https://openalex.org/I2252096349"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Akihiro Shibatomi","raw_affiliation_strings":["Fujitsu Laboratories Limited"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fujitsu Laboratories Limited","institution_ids":["https://openalex.org/I2252096349"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I2252096349"],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":2.8764,"has_fulltext":false,"cited_by_count":26,"citation_normalized_percentile":{"value":0.89363654,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"23","issue":"5A","first_page":"L342","last_page":"L342"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.44999998807907104,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.44999998807907104,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.3644999861717224,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.1509999930858612,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gaas-mesfet","display_name":"GaAs MESFET","score":0.9890000224113464},{"id":"https://openalex.org/keywords/self-aligned-gate","display_name":"self-aligned gate","score":0.925000011920929},{"id":"https://openalex.org/keywords/n-layer","display_name":"n+ layer","score":0.8299999833106995},{"id":"https://openalex.org/keywords/metal-organic-chemical-vapor-deposition","display_name":"metalorganic chemical vapor deposition","score":0.7400000095367432},{"id":"https://openalex.org/keywords/microwave-devices","display_name":"microwave devices","score":0.6830000281333923}],"concepts":[{"id":"https://openalex.org/C134123091","wikidata":"https://www.wikidata.org/wiki/Q1837339","display_name":"MESFET","level":5,"score":0.8653696775436401},{"id":"https://openalex.org/C525849907","wikidata":"https://www.wikidata.org/wiki/Q1096","display_name":"Tin","level":2,"score":0.8478868007659912},{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.7854845523834229},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.683853030204773},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6763167977333069},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.5770850777626038},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.27631866931915283},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2519373297691345},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.21474513411521912},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.19789549708366394},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.12668943405151367},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07915306091308594},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.07569587230682373},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/jjap.23.l342","doi":"https://doi.org/10.1143/jjap.23.l342","is_oa":false,"landing_page_url":"https://doi.org/10.1143/jjap.23.l342","pdf_url":null,"source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W1968631546","https://openalex.org/W2050674064","https://openalex.org/W2093547401","https://openalex.org/W2096289047"],"related_works":["https://openalex.org/W2067006136","https://openalex.org/W2007640019","https://openalex.org/W3131826777","https://openalex.org/W4391877390","https://openalex.org/W2163753357","https://openalex.org/W2571101559","https://openalex.org/W2009689003","https://openalex.org/W2291724589","https://openalex.org/W4391877362","https://openalex.org/W2126879533"],"abstract_inverted_index":{"A":[0,67],"WSi/TiN/Au":[1,11,81],"gate":[2,12,33,42,82],"self-aligned":[3,83],"GaAs":[4,84],"MESFET":[5],"was":[6,46,56],"formed":[7],"using":[8,79],"MOCVD.":[9],"The":[10,41],"acts":[13],"as":[14],"a":[15],"selective":[16],"growth":[17],"mask":[18],"for":[19,30],"the":[20,32,64,80],"n+-layer.":[21],"This":[22],"new":[23],"process":[24],"is":[25],"demonstrated":[26],"to":[27,61],"be":[28,76],"effective":[29],"reducing":[31],"resistance":[34,37],"and":[35,55,70],"source":[36],"of":[38,63],"FETs":[39],"simultaneously.":[40],"resistance,":[43],"R":[44],"g,":[45],"3.4":[47],"\u03a9":[48],"(L":[49],"g=1.3":[50],"um,":[51],"W":[52],"g=30":[53],"um)":[54],"reduced":[57],"one":[58],"tenth":[59],"compared":[60],"that":[62],"WSi":[65],"gate.":[66],"high-speed":[68],"MSI":[69],"high":[71],"performance":[72],"microwave":[73],"device":[74],"can":[75],"obtained":[77],"by":[78],"MESFETs.":[85]},"counts_by_year":[],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2016-06-24T00:00:00"}