{"id":"https://openalex.org/W2010109760","doi":"https://doi.org/10.1016/0039-6028(95)00762-8","title":"Domain formation on the reconstructed GaAs(001) surface","display_name":"Domain formation on the reconstructed GaAs(001) surface","publication_year":1995,"publication_date":"1995-11-01","ids":{"openalex":"https://openalex.org/W2010109760","doi":"https://doi.org/10.1016/0039-6028(95)00762-8","mag":"2010109760"},"language":"en","primary_location":{"id":"doi:10.1016/0039-6028(95)00762-8","doi":"https://doi.org/10.1016/0039-6028(95)00762-8","is_oa":false,"landing_page_url":"https://doi.org/10.1016/0039-6028(95)00762-8","pdf_url":null,"source":{"id":"https://openalex.org/S137865625","display_name":"Surface Science","issn_l":"0039-6028","issn":["0039-6028","1879-2758"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-100","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Surface Science","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5022609306","display_name":"J. Behrend","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210116306","display_name":"Paul Drude Institute for Solid State Electronics","ror":"https://ror.org/01mk1hj86","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I4210116306"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"J. Behrend","raw_affiliation_strings":["Paul-Drude-Institut f\u00fcr Festk\u00f6rperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Paul-Drude-Institut f\u00fcr Festk\u00f6rperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany","institution_ids":["https://openalex.org/I4210116306"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001920292","display_name":"M. Wassermeier","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210116306","display_name":"Paul Drude Institute for Solid State Electronics","ror":"https://ror.org/01mk1hj86","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I4210116306"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"M. Wassermeier","raw_affiliation_strings":["Paul-Drude-Institut f\u00fcr Festk\u00f6rperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Paul-Drude-Institut f\u00fcr Festk\u00f6rperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany","institution_ids":["https://openalex.org/I4210116306"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006792914","display_name":"L. D\u00e4weritz","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210116306","display_name":"Paul Drude Institute for Solid State Electronics","ror":"https://ror.org/01mk1hj86","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I4210116306"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"L. D\u00e4weritz","raw_affiliation_strings":["Paul-Drude-Institut f\u00fcr Festk\u00f6rperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Paul-Drude-Institut f\u00fcr Festk\u00f6rperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany","institution_ids":["https://openalex.org/I4210116306"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111849375","display_name":"Klaus Ploog","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210116306","display_name":"Paul Drude Institute for Solid State Electronics","ror":"https://ror.org/01mk1hj86","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I4210116306"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"K.H. Ploog","raw_affiliation_strings":["Paul-Drude-Institut f\u00fcr Festk\u00f6rperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Paul-Drude-Institut f\u00fcr Festk\u00f6rperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany","institution_ids":["https://openalex.org/I4210116306"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5022609306"],"corresponding_institution_ids":["https://openalex.org/I4210116306"],"apc_list":{"value":3340,"currency":"USD","value_usd":3340},"apc_paid":null,"fwci":1.9043,"has_fulltext":false,"cited_by_count":36,"citation_normalized_percentile":{"value":0.85002329,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"342","issue":"1-3","first_page":"63","last_page":"68"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T13531","display_name":"Surface and Thin Film Phenomena","score":0.9804999828338623,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T13531","display_name":"Surface and Thin Film Phenomena","score":0.9804999828338623,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.016300000250339508,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12285","display_name":"Surface Chemistry and Catalysis","score":0.0012000000569969416,"subfield":{"id":"https://openalex.org/subfields/1606","display_name":"Physical and Theoretical Chemistry"},"field":{"id":"https://openalex.org/fields/16","display_name":"Chemistry"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gaas-001-surface","display_name":"GaAs(001) surface","score":0.9940000176429749},{"id":"https://openalex.org/keywords/surface-reconstruction","display_name":"surface reconstruction","score":0.9629999995231628},{"id":"https://openalex.org/keywords/domain-formation","display_name":"domain formation","score":0.5899999737739563},{"id":"https://openalex.org/keywords/post-growth-annealing","display_name":"post-growth annealing","score":0.8920000195503235},{"id":"https://openalex.org/keywords/ultra-high-vacuum-annealing","display_name":"ultrahigh vacuum annealing","score":0.7760000228881836},{"id":"https://openalex.org/keywords/step-bunching","display_name":"step bunching","score":0.6159999966621399},{"id":"https://openalex.org/keywords/sublimation","display_name":"sublimation","score":0.7459999918937683}],"concepts":[{"id":"https://openalex.org/C20885615","wikidata":"https://www.wikidata.org/wiki/Q825595","display_name":"Surface reconstruction","level":3,"score":0.8990631699562073},{"id":"https://openalex.org/C200096950","wikidata":"https://www.wikidata.org/wiki/Q455003","display_name":"Reflection high-energy electron diffraction","level":4,"score":0.8734443187713623},{"id":"https://openalex.org/C6518042","wikidata":"https://www.wikidata.org/wiki/Q175646","display_name":"Scanning tunneling microscope","level":2,"score":0.8252270221710205},{"id":"https://openalex.org/C77557913","wikidata":"https://www.wikidata.org/wiki/Q864822","display_name":"Electron diffraction","level":3,"score":0.6688145399093628},{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.6528018712997437},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6286518573760986},{"id":"https://openalex.org/C58437636","wikidata":"https://www.wikidata.org/wiki/Q217249","display_name":"Sublimation (psychology)","level":2,"score":0.5162181854248047},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.4854024350643158},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.4802825152873993},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4439467191696167},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.395906001329422},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3879351019859314},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.37095749378204346},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.34396663308143616},{"id":"https://openalex.org/C2776799497","wikidata":"https://www.wikidata.org/wiki/Q484298","display_name":"Surface (topology)","level":2,"score":0.23978838324546814},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2200627624988556},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12017226219177246},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.09049144387245178},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0829571783542633},{"id":"https://openalex.org/C542102704","wikidata":"https://www.wikidata.org/wiki/Q183257","display_name":"Psychotherapist","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C15744967","wikidata":"https://www.wikidata.org/wiki/Q9418","display_name":"Psychology","level":0,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/0039-6028(95)00762-8","doi":"https://doi.org/10.1016/0039-6028(95)00762-8","is_oa":false,"landing_page_url":"https://doi.org/10.1016/0039-6028(95)00762-8","pdf_url":null,"source":{"id":"https://openalex.org/S137865625","display_name":"Surface Science","issn_l":"0039-6028","issn":["0039-6028","1879-2758"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-100","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Surface Science","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W1971822462","https://openalex.org/W1973125711","https://openalex.org/W1982465695","https://openalex.org/W1983594517","https://openalex.org/W1996653433","https://openalex.org/W2005539872","https://openalex.org/W2008209490","https://openalex.org/W2027194772","https://openalex.org/W2031375804","https://openalex.org/W2031718609","https://openalex.org/W2038052186","https://openalex.org/W2042708632","https://openalex.org/W2055315532","https://openalex.org/W2070187372","https://openalex.org/W2074370128","https://openalex.org/W2074575514","https://openalex.org/W2082498932","https://openalex.org/W2146415792","https://openalex.org/W2977703781","https://openalex.org/W3215798690","https://openalex.org/W4319721064"],"related_works":["https://openalex.org/W2047549625","https://openalex.org/W2012312065","https://openalex.org/W2107703333","https://openalex.org/W2142529822","https://openalex.org/W2060202229","https://openalex.org/W4238624214","https://openalex.org/W2078790762","https://openalex.org/W2034227161","https://openalex.org/W1674609665","https://openalex.org/W2004658425"],"abstract_inverted_index":null,"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2016-06-24T00:00:00"}