{"id":"https://openalex.org/W2008803249","doi":"https://doi.org/10.1109/epe.2013.6631910","title":"Robustness requirements on semiconductors for high power applications","display_name":"Robustness requirements on semiconductors for high power applications","publication_year":2013,"publication_date":"2013-09-01","ids":{"openalex":"https://openalex.org/W2008803249","doi":"https://doi.org/10.1109/epe.2013.6631910","mag":"2008803249"},"language":"en","primary_location":{"id":"doi:10.1109/epe.2013.6631910","doi":"https://doi.org/10.1109/epe.2013.6631910","is_oa":false,"landing_page_url":"https://doi.org/10.1109/epe.2013.6631910","pdf_url":null,"source":{"id":"https://openalex.org/S4306418342","display_name":"European Conference on Power Electronics and Applications","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 15th European Conference on Power Electronics and Applications (EPE)","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5000645650","display_name":"Andreas Nagel","orcid":"https://orcid.org/0009-0008-0374-5549","observed_orcids":["https://orcid.org/0009-0008-0374-5549"]},"institutions":[{"id":"https://openalex.org/I1325886976","display_name":"Siemens (Germany)","ror":"https://ror.org/059mq0909","country_code":"DE","type":"company","lineage":["https://openalex.org/I1325886976"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Andreas Nagel","raw_affiliation_strings":["Siemens AG, Nuernberg, Germany","Siemens AG, Nu\u0308rnberg, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Siemens AG, Nuernberg, Germany","institution_ids":["https://openalex.org/I1325886976"]},{"raw_affiliation_string":"Siemens AG, Nu\u0308rnberg, Germany","institution_ids":["https://openalex.org/I1325886976"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5031727720","display_name":"Mark\u2010M. Bakran","orcid":"https://orcid.org/0000-0002-0622-5855","observed_orcids":["https://orcid.org/0000-0002-0622-5855"]},"institutions":[{"id":"https://openalex.org/I54009628","display_name":"University of Bayreuth","ror":"https://ror.org/0234wmv40","country_code":"DE","type":"education","lineage":["https://openalex.org/I54009628"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Mark M. Bakran","raw_affiliation_strings":["University of Bayreuth, Bayreuth, Germany","Univ. Bayreuth, Bayreuth, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Bayreuth, Bayreuth, Germany","institution_ids":["https://openalex.org/I54009628"]},{"raw_affiliation_string":"Univ. Bayreuth, Bayreuth, Germany","institution_ids":["https://openalex.org/I54009628"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.4073,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.48881697,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"9"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9771000146865845,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9771000146865845,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.013100000098347664,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":0.0017999999690800905,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/power-semiconductor-devices","display_name":"power semiconductor devices","score":0.9350000023841858},{"id":"https://openalex.org/keywords/robustness","display_name":"robustness","score":0.7089999914169312},{"id":"https://openalex.org/keywords/high-power-converters","display_name":"high-power converters","score":0.8349999785423279},{"id":"https://openalex.org/keywords/power-converter-reliability","display_name":"converter reliability","score":0.6800000071525574},{"id":"https://openalex.org/keywords/semiconductor-device-design","display_name":"semiconductor device design","score":0.718999981880188},{"id":"https://openalex.org/keywords/device-reliability","display_name":"device reliability","score":0.33000001311302185}],"concepts":[{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.8842086791992188},{"id":"https://openalex.org/C188198153","wikidata":"https://www.wikidata.org/wiki/Q1613840","display_name":"Limiting","level":2,"score":0.7210890650749207},{"id":"https://openalex.org/C2778422915","wikidata":"https://www.wikidata.org/wiki/Q10302051","display_name":"Converters","level":3,"score":0.7139524817466736},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5978534817695618},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.5046566724777222},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5038072466850281},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5037292838096619},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.457391619682312},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.414158433675766},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4046958386898041},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.28095167875289917},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.17939811944961548},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12151172757148743},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.09196385741233826},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.07317957282066345},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/epe.2013.6631910","doi":"https://doi.org/10.1109/epe.2013.6631910","is_oa":false,"landing_page_url":"https://doi.org/10.1109/epe.2013.6631910","pdf_url":null,"source":{"id":"https://openalex.org/S4306418342","display_name":"European Conference on Power Electronics and Applications","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 15th European Conference on Power Electronics and Applications (EPE)","raw_type":"proceedings-article"},{"id":"pmh:oai::3594","doi":null,"is_oa":false,"landing_page_url":"https://eref.uni-bayreuth.de/3594/","pdf_url":null,"source":{"id":"https://openalex.org/S4377196442","display_name":"ERef Bayreuth (University of Bayreuth)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I54009628","host_organization_name":"University of Bayreuth","host_organization_lineage":["https://openalex.org/I54009628"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Aufsatz in einem Buch"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.75,"display_name":"Affordable and clean energy"},{"id":"https://metadata.un.org/sdg/9","score":0.7207000255584717,"display_name":"Industry, innovation and infrastructure"}],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1488427103","https://openalex.org/W1495991269","https://openalex.org/W1712744536","https://openalex.org/W2008123299","https://openalex.org/W2105557297","https://openalex.org/W2132796962","https://openalex.org/W2137056443","https://openalex.org/W2540627174"],"related_works":["https://openalex.org/W2061106462","https://openalex.org/W2061913805","https://openalex.org/W4411604401","https://openalex.org/W2117490088","https://openalex.org/W4411055055","https://openalex.org/W2134643560","https://openalex.org/W2917984724","https://openalex.org/W6967296032","https://openalex.org/W1988056095","https://openalex.org/W2543154952"],"abstract_inverted_index":{"Robustness":[0],"of":[1,50,54],"power":[2,24],"semiconductors":[3],"is":[4],"a":[5],"key":[6],"parameter":[7],"for":[8,31],"reliable":[9],"converter":[10],"operation.":[11],"This":[12],"paper":[13],"discusses":[14],"the":[15,20,32,39,45,48,55],"main":[16],"robustness":[17],"characteristics":[18],"limiting":[19],"performance":[21],"in":[22],"high":[23],"converters.":[25],"It":[26],"shows":[27],"necessary":[28],"design":[29,34],"precautions":[30],"circuit":[33],"and":[35],"also":[36],"explains":[37],"where":[38],"semiconductor":[40],"manufacturer":[41],"has":[42],"to":[43],"improve":[44],"devices":[46],"with":[47],"aim":[49],"maximum":[51],"electrical":[52],"exploitation":[53],"semiconductor.":[56]},"counts_by_year":[{"year":2017,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2016-06-24T00:00:00"}