{"id":"https://openalex.org/W2008776359","doi":"https://doi.org/10.1109/ted.2012.2218111","title":"Theoretical Investigation of Terahertz GaN Mesa Transferred-Electron Device by Means of Time-Domain Energy/Momentum Modeling","display_name":"Theoretical Investigation of Terahertz GaN Mesa Transferred-Electron Device by Means of Time-Domain Energy/Momentum Modeling","publication_year":2012,"publication_date":"2012-10-11","ids":{"openalex":"https://openalex.org/W2008776359","doi":"https://doi.org/10.1109/ted.2012.2218111","mag":"2008776359"},"language":"en","primary_location":{"id":"doi:10.1109/ted.2012.2218111","doi":"https://doi.org/10.1109/ted.2012.2218111","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ted.2012.2218111","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5006231307","display_name":"C. Dalle","orcid":"https://orcid.org/0000-0001-9409-5204","observed_orcids":["https://orcid.org/0000-0001-9409-5204"]},"institutions":[{"id":"https://openalex.org/I4210123471","display_name":"Institut d'Electronique, de Micro\u00e9lectronique et de Nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I2279609970","https://openalex.org/I4210095849","https://openalex.org/I4210116330","https://openalex.org/I4210123471","https://openalex.org/I70348806","https://openalex.org/I7454413"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Christophe Dalle","raw_affiliation_strings":["Institut d'Electronique de Micro\u00e9lectonique et de Nanotechnologie, Villeneuve d'Ascq, France","Inst. d'Electron. de Microelectonique et de Nanotechnol., Villeneuve d'Ascq, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut d'Electronique de Micro\u00e9lectonique et de Nanotechnologie, Villeneuve d'Ascq, France","institution_ids":["https://openalex.org/I4210123471"]},{"raw_affiliation_string":"Inst. d'Electron. de Microelectonique et de Nanotechnol., Villeneuve d'Ascq, France","institution_ids":["https://openalex.org/I4210123471"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073419688","display_name":"F. Dessenne","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2279609970","display_name":"Universit\u00e9 de Lille","ror":"https://ror.org/02kzqn938","country_code":"FR","type":"education","lineage":["https://openalex.org/I2279609970"]},{"id":"https://openalex.org/I4387154560","display_name":"Universit\u00e9 Lille 1","ror":"https://ror.org/040hwdc70","country_code":"FR","type":"education","lineage":["https://openalex.org/I2279609970","https://openalex.org/I4387154560"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Fran\u00e7ois Dessenne","raw_affiliation_strings":["University of Lille 1, Villeneuve d'Ascq, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Lille 1, Villeneuve d'Ascq, France","institution_ids":["https://openalex.org/I2279609970","https://openalex.org/I4387154560"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5023742200","display_name":"Jean\u2010Luc Thobel","orcid":"https://orcid.org/0000-0002-4242-0383","observed_orcids":["https://orcid.org/0000-0002-4242-0383"]},"institutions":[{"id":"https://openalex.org/I4210123471","display_name":"Institut d'Electronique, de Micro\u00e9lectronique et de Nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I2279609970","https://openalex.org/I4210095849","https://openalex.org/I4210116330","https://openalex.org/I4210123471","https://openalex.org/I70348806","https://openalex.org/I7454413"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Jean-Luc Thobel","raw_affiliation_strings":["Institut d'Electronique de Micro\u00e9lectonique et de Nanotechnologie, Villeneuve d'Ascq, France","Inst. d'Electron. de Microelectonique et de Nanotechnol., Villeneuve d'Ascq, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut d'Electronique de Micro\u00e9lectonique et de Nanotechnologie, Villeneuve d'Ascq, France","institution_ids":["https://openalex.org/I4210123471"]},{"raw_affiliation_string":"Inst. d'Electron. de Microelectonique et de Nanotechnol., Villeneuve d'Ascq, France","institution_ids":["https://openalex.org/I4210123471"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":0.3228,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.55018144,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"59","issue":"12","first_page":"3321","last_page":"3326"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.875,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.875,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10752","display_name":"Terahertz technology and applications","score":0.09700000286102295,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11175","display_name":"Gyrotron and Vacuum Electronics Research","score":0.0052999998442828655,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mesa-structure","display_name":"mesa structure","score":0.47699999809265137},{"id":"https://openalex.org/keywords/device-structure-optimization","display_name":"device structure optimization","score":0.6899999976158142},{"id":"https://openalex.org/keywords/rf-emission","display_name":"RF emissions","score":0.46799999475479126},{"id":"https://openalex.org/keywords/continuous-wave-terahertz-source","display_name":"continuous-wave terahertz source","score":0.7990000247955322},{"id":"https://openalex.org/keywords/maximum-operating-frequency","display_name":"maximum operating frequency","score":0.7419999837875366},{"id":"https://openalex.org/keywords/thermal-limits","display_name":"thermal limits","score":0.6299999952316284}],"concepts":[{"id":"https://openalex.org/C107816215","wikidata":"https://www.wikidata.org/wiki/Q647887","display_name":"Terahertz radiation","level":2,"score":0.8303377628326416},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.5558056235313416},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5453072190284729},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5383478403091431},{"id":"https://openalex.org/C2781089630","wikidata":"https://www.wikidata.org/wiki/Q21856745","display_name":"Realization (probability)","level":2,"score":0.5227668285369873},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.4596623182296753},{"id":"https://openalex.org/C186370098","wikidata":"https://www.wikidata.org/wiki/Q442787","display_name":"Energy (signal processing)","level":2,"score":0.4426334500312805},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.11622649431228638},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.090364009141922},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/ted.2012.2218111","doi":"https://doi.org/10.1109/ted.2012.2218111","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ted.2012.2218111","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"},{"id":"pmh:oai:HAL:hal-00788232v1","doi":null,"is_oa":false,"landing_page_url":"https://hal.science/hal-00788232","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4405252976","host_organization_name":"Centre pour la Communication Scientifique Directe","host_organization_lineage":["https://openalex.org/I4405252976"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Transactions on Electron Devices, 2012, 59, pp.3321-3326. ⟨10.1109/TED.2012.2218111⟩","raw_type":"info:eu-repo/semantics/article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W352538250","https://openalex.org/W1536879103","https://openalex.org/W1977154912","https://openalex.org/W1986118601","https://openalex.org/W1999328582","https://openalex.org/W2007002676","https://openalex.org/W2024643745","https://openalex.org/W2037956039","https://openalex.org/W2076955724","https://openalex.org/W2082191249","https://openalex.org/W2106250628","https://openalex.org/W2115625037","https://openalex.org/W2117606922","https://openalex.org/W2121732650","https://openalex.org/W2133716739","https://openalex.org/W2141771855","https://openalex.org/W2147777907","https://openalex.org/W2937947362"],"related_works":["https://openalex.org/W2580384022","https://openalex.org/W2946278590","https://openalex.org/W2897666941","https://openalex.org/W105112085","https://openalex.org/W7028469589","https://openalex.org/W2088662230","https://openalex.org/W2077824876","https://openalex.org/W3202167502","https://openalex.org/W2785422868","https://openalex.org/W2028142264"],"abstract_inverted_index":{"The":[0,34,40,46],"potential":[1,57],"of":[2,6,23,62,74],"N+NN+GaN":[3],"transferred-electron":[4],"devices":[5],"mesa":[7],"type":[8],"operating":[9,42,83],"in":[10],"the":[11,60,80],"accumulation":[12],"layer":[13],"transit-time":[14],"mode":[15,43],"at":[16,69],"1":[17,70,88],"THz":[18],"is":[19,44,55,85],"investigated":[20],"by":[21],"means":[22],"1-D":[24],"time-domain":[25],"energy/momentum":[26],"numerical":[27],"modeling.":[28],"GaN":[29],"transport":[30],"parameters":[31],"are":[32],"specified.":[33],"device":[35],"structure":[36],"has":[37],"been":[38],"optimized.":[39],"RF":[41,47],"analyzed.":[45],"emitted":[48],"performance":[49],"demonstrates":[50],"that":[51],"such":[52],"a":[53,56],"diode":[54],"candidate":[58],"for":[59],"realization":[61],"continuous-wave":[63],"cooled":[64],"or":[65],"pulsed":[66],"low-power":[67],"sources":[68],"THz.":[71,89],"Moreover,":[72],"because":[73],"both":[75],"electronic":[76],"and":[77],"thermal":[78],"limitations,":[79],"maximum":[81],"achievable":[82],"frequency":[84],"close":[86],"to":[87]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}