{"id":"https://openalex.org/W2008678283","doi":"https://doi.org/10.1016/j.optlastec.2006.10.003","title":"Gain and threshold properties of InGaAsN/GaAsN material system for 1.3-\u03bcm semiconductor lasers","display_name":"Gain and threshold properties of InGaAsN/GaAsN material system for 1.3-\u03bcm semiconductor lasers","publication_year":2006,"publication_date":"2006-11-17","ids":{"openalex":"https://openalex.org/W2008678283","doi":"https://doi.org/10.1016/j.optlastec.2006.10.003","mag":"2008678283"},"language":"en","primary_location":{"id":"doi:10.1016/j.optlastec.2006.10.003","doi":"https://doi.org/10.1016/j.optlastec.2006.10.003","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.optlastec.2006.10.003","pdf_url":null,"source":{"id":"https://openalex.org/S112574528","display_name":"Optics & Laser Technology","issn_l":"0030-3992","issn":["0030-3992","0374-3926","1878-7371","1879-2545"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Optics &amp; Laser Technology","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111468232","display_name":"Sheng\u2010Horng Yen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I70522481","display_name":"National Changhua University of Education","ror":"https://ror.org/005gkfa10","country_code":"TW","type":"education","lineage":["https://openalex.org/I70522481"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Sheng-Horng Yen","raw_affiliation_strings":["Department of Physics, National ChangHua University of Education,Changhua 500,Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, National ChangHua University of Education,Changhua 500,Taiwan","institution_ids":["https://openalex.org/I70522481"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114195617","display_name":"Mei-Ling Chen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I70522481","display_name":"National Changhua University of Education","ror":"https://ror.org/005gkfa10","country_code":"TW","type":"education","lineage":["https://openalex.org/I70522481"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Mei-Ling Chen","raw_affiliation_strings":["Department of Physics, National ChangHua University of Education,Changhua 500,Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, National ChangHua University of Education,Changhua 500,Taiwan","institution_ids":["https://openalex.org/I70522481"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5082459335","display_name":"Yen\u2010Kuang Kuo","orcid":"https://orcid.org/0000-0001-5475-2513","observed_orcids":["https://orcid.org/0000-0001-5475-2513"]},"institutions":[{"id":"https://openalex.org/I70522481","display_name":"National Changhua University of Education","ror":"https://ror.org/005gkfa10","country_code":"TW","type":"education","lineage":["https://openalex.org/I70522481"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Yen-Kuang Kuo","raw_affiliation_strings":["Department of Physics, National ChangHua University of Education,Changhua 500,Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, National ChangHua University of Education,Changhua 500,Taiwan","institution_ids":["https://openalex.org/I70522481"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I70522481"],"apc_list":{"value":3230,"currency":"USD","value_usd":3230},"apc_paid":null,"fwci":0.1878,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.49099598,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"39","issue":"7","first_page":"1432","last_page":"1436"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.6553000211715698,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.6553000211715698,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.2890999913215637,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.02590000070631504,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/1-3-mum-semiconductor-lasers","display_name":"1.3 \u03bcm semiconductor lasers","score":0.9179999828338623},{"id":"https://openalex.org/keywords/quantum-well-lasers","display_name":"quantum well lasers","score":0.6620000004768372},{"id":"https://openalex.org/keywords/material-gain","display_name":"material gain","score":0.7390000224113464},{"id":"https://openalex.org/keywords/threshold-properties","display_name":"threshold properties","score":0.5860000252723694},{"id":"https://openalex.org/keywords/valence-subbands","display_name":"valence subbands","score":0.8539999723434448},{"id":"https://openalex.org/keywords/compressive-strain","display_name":"compressive strain","score":0.7760000228881836},{"id":"https://openalex.org/keywords/tensile-strain","display_name":"tensile strain","score":0.9279999732971191},{"id":"https://openalex.org/keywords/auger-recombination","display_name":"Auger recombination","score":0.9419999718666077}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7767884731292725},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6513227820396423},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.6407927870750427},{"id":"https://openalex.org/C29169072","wikidata":"https://www.wikidata.org/wiki/Q521166","display_name":"Quantum well","level":3,"score":0.6143117547035217},{"id":"https://openalex.org/C171627272","wikidata":"https://www.wikidata.org/wiki/Q719512","display_name":"Auger effect","level":3,"score":0.5910279750823975},{"id":"https://openalex.org/C121477167","wikidata":"https://www.wikidata.org/wiki/Q17154002","display_name":"Semiconductor laser theory","level":3,"score":0.5607798099517822},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.5425326228141785},{"id":"https://openalex.org/C111154242","wikidata":"https://www.wikidata.org/wiki/Q923545","display_name":"Spontaneous emission","level":3,"score":0.44515499472618103},{"id":"https://openalex.org/C2780646311","wikidata":"https://www.wikidata.org/wiki/Q1142501","display_name":"Auger","level":2,"score":0.3417867422103882},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.24006769061088562},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10666146874427795},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.10163313150405884}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.optlastec.2006.10.003","doi":"https://doi.org/10.1016/j.optlastec.2006.10.003","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.optlastec.2006.10.003","pdf_url":null,"source":{"id":"https://openalex.org/S112574528","display_name":"Optics & Laser Technology","issn_l":"0030-3992","issn":["0030-3992","0374-3926","1878-7371","1879-2545"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-c","jufo-1","ki-jl-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Optics &amp; Laser Technology","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1556372185","https://openalex.org/W1556942888","https://openalex.org/W1614288780","https://openalex.org/W1974735716","https://openalex.org/W1988197161","https://openalex.org/W2027533919","https://openalex.org/W2034203939","https://openalex.org/W2050898400","https://openalex.org/W2081993496","https://openalex.org/W2097151945","https://openalex.org/W2102926064","https://openalex.org/W2129535649","https://openalex.org/W2151975722","https://openalex.org/W2160682213","https://openalex.org/W2163085198","https://openalex.org/W2171587031"],"related_works":["https://openalex.org/W1969655330","https://openalex.org/W1614288780","https://openalex.org/W1978759751","https://openalex.org/W1965587577","https://openalex.org/W1965943839","https://openalex.org/W2035370100","https://openalex.org/W2139134176","https://openalex.org/W1974735716","https://openalex.org/W2059891540","https://openalex.org/W2130028374"],"abstract_inverted_index":null,"counts_by_year":[{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":3},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":2}],"updated_date":"2026-08-21T09:56:20.448147","created_date":"2016-06-24T00:00:00"}
