{"id":"https://openalex.org/W2008454595","doi":"https://doi.org/10.1063/1.98194","title":"Study of interface states in the metal-semiconductor junction using deep level transient spectroscopy","display_name":"Study of interface states in the metal-semiconductor junction using deep level transient spectroscopy","publication_year":1987,"publication_date":"1987-02-09","ids":{"openalex":"https://openalex.org/W2008454595","doi":"https://doi.org/10.1063/1.98194","mag":"2008454595"},"language":"en","primary_location":{"id":"doi:10.1063/1.98194","doi":"https://doi.org/10.1063/1.98194","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.98194","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100399276","display_name":"Han Zhang","orcid":"https://orcid.org/0000-0002-0166-1973","observed_orcids":["https://orcid.org/0000-0002-0166-1973","https://orcid.org/0009-0006-9948-2696","https://orcid.org/0000-0002-6645-8810","https://orcid.org/0000-0001-7336-6394","https://orcid.org/0000-0003-4043-1967","https://orcid.org/0009-0000-9999-1649","https://orcid.org/0009-0003-1573-2167","https://orcid.org/0009-0005-9122-1638","https://orcid.org/0009-0008-4560-0372","https://orcid.org/0000-0002-3185-5680"]},"institutions":[{"id":"https://openalex.org/I4210110652","display_name":"RIKEN","ror":"https://ror.org/01sjwvz98","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210110652"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Han Zhang","raw_affiliation_strings":["The Institute of Physical and Chemical Research, Wako-shi, Saitama 351-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The Institute of Physical and Chemical Research, Wako-shi, Saitama 351-01, Japan","institution_ids":["https://openalex.org/I4210110652"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100831980","display_name":"Yoshinobu Aoyagi","orcid":"https://orcid.org/0009-0000-2732-6498","observed_orcids":["https://orcid.org/0009-0000-2732-6498"]},"institutions":[{"id":"https://openalex.org/I4210110652","display_name":"RIKEN","ror":"https://ror.org/01sjwvz98","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210110652"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yoshinobu Aoyagi","raw_affiliation_strings":["The Institute of Physical and Chemical Research, Wako-shi, Saitama 351-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The Institute of Physical and Chemical Research, Wako-shi, Saitama 351-01, Japan","institution_ids":["https://openalex.org/I4210110652"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111753621","display_name":"Sohachi Iwai","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210110652","display_name":"RIKEN","ror":"https://ror.org/01sjwvz98","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210110652"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Sohachi Iwai","raw_affiliation_strings":["The Institute of Physical and Chemical Research, Wako-shi, Saitama 351-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The Institute of Physical and Chemical Research, Wako-shi, Saitama 351-01, Japan","institution_ids":["https://openalex.org/I4210110652"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5108455243","display_name":"Susumu Namba","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210110652","display_name":"RIKEN","ror":"https://ror.org/01sjwvz98","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210110652"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Susumu Namba","raw_affiliation_strings":["The Institute of Physical and Chemical Research, Wako-shi, Saitama 351-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The Institute of Physical and Chemical Research, Wako-shi, Saitama 351-01, Japan","institution_ids":["https://openalex.org/I4210110652"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210110652"],"apc_list":null,"apc_paid":null,"fwci":2.1839,"has_fulltext":false,"cited_by_count":30,"citation_normalized_percentile":{"value":0.86472084,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":96},"biblio":{"volume":"50","issue":"6","first_page":"341","last_page":"343"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9800000190734863,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9800000190734863,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.01769999973475933,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.0007999999797903001,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/interface-states","display_name":"interface states","score":0.9779999852180481},{"id":"https://openalex.org/keywords/metal-semiconductor-junction","display_name":"metal-semiconductor contacts","score":0.9810000061988831},{"id":"https://openalex.org/keywords/deep-level-transient-spectroscopy","display_name":"deep level transient spectroscopy","score":0.9829999804496765},{"id":"https://openalex.org/keywords/schottky-barrier","display_name":"Schottky barrier","score":0.6290000081062317}],"concepts":[{"id":"https://openalex.org/C2780080961","wikidata":"https://www.wikidata.org/wiki/Q176282","display_name":"Deep-level transient spectroscopy","level":3,"score":0.9033476114273071},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.7230499982833862},{"id":"https://openalex.org/C27067764","wikidata":"https://www.wikidata.org/wiki/Q528769","display_name":"Conduction band","level":3,"score":0.5956110954284668},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5924354195594788},{"id":"https://openalex.org/C32891209","wikidata":"https://www.wikidata.org/wiki/Q483666","display_name":"Spectroscopy","level":2,"score":0.5829137563705444},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.5300338864326477},{"id":"https://openalex.org/C113843644","wikidata":"https://www.wikidata.org/wiki/Q901882","display_name":"Interface (matter)","level":4,"score":0.5083042979240417},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.49154648184776306},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.48491865396499634},{"id":"https://openalex.org/C204323151","wikidata":"https://www.wikidata.org/wiki/Q905424","display_name":"Range (aeronautics)","level":2,"score":0.4662885367870331},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.45986035466194153},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.35488882660865784},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.3229495882987976},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.13829681277275085},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.11357584595680237},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11026784777641296},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.10921898484230042},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.07217493653297424},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.056704312562942505},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C28413391","wikidata":"https://www.wikidata.org/wiki/Q785542","display_name":"Capillary number","level":3,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C196806460","wikidata":"https://www.wikidata.org/wiki/Q188603","display_name":"Capillary action","level":2,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1063/1.98194","doi":"https://doi.org/10.1063/1.98194","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.98194","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},{"id":"pmh:oai:irdb.nii.ac.jp:00897:0003861514","doi":null,"is_oa":false,"landing_page_url":"http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100459426","pdf_url":null,"source":{"id":"https://openalex.org/S7407056385","display_name":"Institutional Repositories DataBase (IRDB)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I184597095","host_organization_name":"National Institute of Informatics","host_organization_lineage":["https://openalex.org/I184597095"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Appl.Phys.Letters","raw_type":"journal article"},{"id":"pmh:oai:t2r2.star.titech.ac.jp:00062646","doi":null,"is_oa":false,"landing_page_url":"http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100459426","pdf_url":null,"source":{"id":"https://openalex.org/S4377196385","display_name":"Tokyo Tech Research Repository (Tokyo Institute of Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I114531698","host_organization_name":"Tokyo Institute of Technology","host_organization_lineage":["https://openalex.org/I114531698"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Journal Article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1963865610","https://openalex.org/W1983840242","https://openalex.org/W1995429055","https://openalex.org/W1996835348","https://openalex.org/W2005306336","https://openalex.org/W2010212764","https://openalex.org/W2020191978","https://openalex.org/W2024364089","https://openalex.org/W2032867332","https://openalex.org/W2052430412","https://openalex.org/W2066982076","https://openalex.org/W2076935039","https://openalex.org/W2088099758","https://openalex.org/W2092665187","https://openalex.org/W2094408261"],"related_works":["https://openalex.org/W2004780496","https://openalex.org/W2015147877","https://openalex.org/W1997990934","https://openalex.org/W2036958040","https://openalex.org/W1995753008","https://openalex.org/W1973820527","https://openalex.org/W1979544114","https://openalex.org/W2050025569","https://openalex.org/W2086100927","https://openalex.org/W2078977870"],"abstract_inverted_index":{"A":[0],"new":[1],"technique":[2,45,65],"is":[3,48,66],"reported":[4],"for":[5,31],"determining":[6],"the":[7,11,25,32,44,53,64],"interface":[8,21],"states":[9],"in":[10,24],"metal-semiconductor":[12],"junction":[13,27],"by":[14,43],"deep":[15],"level":[16],"transient":[17],"spectroscopy.":[18],"The":[19,59],"continuous":[20],"state":[22],"distribution":[23],"Al-GaAs":[26],"has":[28],"been":[29],"studied":[30],"energy":[33],"range":[34],"from":[35],"0.19":[36],"to":[37,50],"0.57":[38],"eV":[39],"below":[40],"conduction":[41],"band":[42],"and":[46,69],"it":[47],"found":[49],"be":[51],"of":[52,55],"order":[54],"4.3\u00d71010\u20137.9\u00d71010":[56],"eV\u22121":[57],"cm\u22122.":[58],"results":[60],"have":[61],"shown":[62],"that":[63],"very":[67],"effective":[68],"credible.":[70]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2017,"cited_by_count":2}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}