{"id":"https://openalex.org/W2008304201","doi":"https://doi.org/10.1149/1.3242360","title":"Electrical and Reliability Characteristics of Barrierless Cu-Based Contact for High Dielectric Constant Oxide Thin-Film Device Integration","display_name":"Electrical and Reliability Characteristics of Barrierless Cu-Based Contact for High Dielectric Constant Oxide Thin-Film Device Integration","publication_year":2009,"publication_date":"2009-01-01","ids":{"openalex":"https://openalex.org/W2008304201","doi":"https://doi.org/10.1149/1.3242360","mag":"2008304201"},"language":"en","primary_location":{"id":"doi:10.1149/1.3242360","doi":"https://doi.org/10.1149/1.3242360","is_oa":false,"landing_page_url":"https://doi.org/10.1149/1.3242360","pdf_url":null,"source":{"id":"https://openalex.org/S138759888","display_name":"Journal of The Electrochemical Society","issn_l":"0013-4651","issn":["0013-4651","1945-7111"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of The Electrochemical Society","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100925140","display_name":"Couchen Wu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I154864474","display_name":"National Taiwan University of Science and Technology","ror":"https://ror.org/00q09pe49","country_code":"TW","type":"education","lineage":["https://openalex.org/I154864474"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"C. H. Wu","raw_affiliation_strings":["Graduate Institute of Engineering and Department of Polymer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan","#N#aGraduate Institute of Engineering and Department of Polymer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate Institute of Engineering and Department of Polymer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan","institution_ids":["https://openalex.org/I154864474"]},{"raw_affiliation_string":"#N#aGraduate Institute of Engineering and Department of Polymer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan","institution_ids":["https://openalex.org/I154864474"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059438050","display_name":"Jinn Peter Chu","orcid":"https://orcid.org/0000-0001-5354-2143","observed_orcids":["https://orcid.org/0000-0001-5354-2143"]},"institutions":[{"id":"https://openalex.org/I154864474","display_name":"National Taiwan University of Science and Technology","ror":"https://ror.org/00q09pe49","country_code":"TW","type":"education","lineage":["https://openalex.org/I154864474"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"J. P. Chu","raw_affiliation_strings":["Graduate Institute of Engineering and Department of Polymer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan","#N#aGraduate Institute of Engineering and Department of Polymer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Graduate Institute of Engineering and Department of Polymer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan","institution_ids":["https://openalex.org/I154864474"]},{"raw_affiliation_string":"#N#aGraduate Institute of Engineering and Department of Polymer Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan","institution_ids":["https://openalex.org/I154864474"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010285135","display_name":"Cherng\u2010Yuan Lin","orcid":"https://orcid.org/0000-0002-4076-6655","observed_orcids":["https://orcid.org/0000-0002-4076-6655"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"C. H. Lin","raw_affiliation_strings":["Department of Electronic Materials, Chin-Min Institute of Technology, Tou-Fen 35153, Taiwan","#N#bDepartment of Electronic Materials, Chin-Min Institute of Technology, Tou-Fen 35153, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic Materials, Chin-Min Institute of Technology, Tou-Fen 35153, Taiwan","institution_ids":[]},{"raw_affiliation_string":"#N#bDepartment of Electronic Materials, Chin-Min Institute of Technology, Tou-Fen 35153, Taiwan","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5022912018","display_name":"Sea\u2010Fue Wang","orcid":"https://orcid.org/0000-0001-8915-6180","observed_orcids":["https://orcid.org/0000-0001-8915-6180"]},"institutions":[{"id":"https://openalex.org/I118292597","display_name":"National Taipei University of Technology","ror":"https://ror.org/00cn92c09","country_code":"TW","type":"education","lineage":["https://openalex.org/I118292597"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"S. F. Wang","raw_affiliation_strings":["Department of Materials and Minerals Resources Engineering, National Taipei University of Technology, Taipei 10608, Taiwan","#N#cDepartment of Materials and Minerals Resources Engineering, National Taipei University of Technology, Taipei 10608, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials and Minerals Resources Engineering, National Taipei University of Technology, Taipei 10608, Taiwan","institution_ids":["https://openalex.org/I118292597"]},{"raw_affiliation_string":"#N#cDepartment of Materials and Minerals Resources Engineering, National Taipei University of Technology, Taipei 10608, Taiwan","institution_ids":["https://openalex.org/I118292597"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1950,"currency":"USD","value_usd":1950},"apc_paid":null,"fwci":0.5289,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.71733252,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":"156","issue":"12","first_page":"G226","last_page":"G226"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.6582000255584717,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.6582000255584717,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.0940999984741211,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.08730000257492065,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/batio3-thin-films","display_name":"BaTiO3 thin films","score":0.7990000247955322},{"id":"https://openalex.org/keywords/tantalum-nitride","display_name":"tantalum nitride","score":0.781000018119812},{"id":"https://openalex.org/keywords/rhenium-nitride","display_name":"rhenium nitride","score":0.843999981880188},{"id":"https://openalex.org/keywords/copper-diffusion","display_name":"copper diffusion","score":0.6510000228881836},{"id":"https://openalex.org/keywords/cu-oxidation","display_name":"Cu oxidation","score":0.8090000152587891},{"id":"https://openalex.org/keywords/contact-reliability","display_name":"contact reliability","score":0.45399999618530273},{"id":"https://openalex.org/keywords/interfacial-compatibility","display_name":"interfacial compatibility","score":0.5690000057220459},{"id":"https://openalex.org/keywords/annealing","display_name":"annealing","score":0.5509999990463257}],"concepts":[{"id":"https://openalex.org/C9395851","wikidata":"https://www.wikidata.org/wiki/Q177929","display_name":"Stack (abstract data type)","level":2,"score":0.7563049793243408},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6837528347969055},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.672645092010498},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.5867629051208496},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.5757601261138916},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.5608711838722229},{"id":"https://openalex.org/C132235601","wikidata":"https://www.wikidata.org/wiki/Q394001","display_name":"Electrical contacts","level":2,"score":0.5190597176551819},{"id":"https://openalex.org/C2778836790","wikidata":"https://www.wikidata.org/wiki/Q5275435","display_name":"Diffusion barrier","level":3,"score":0.4778147041797638},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.38763171434402466},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3491297662258148},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.3206368088722229},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.19910401105880737},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.18514877557754517},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.15271028876304626},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.13004031777381897},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1149/1.3242360","doi":"https://doi.org/10.1149/1.3242360","is_oa":false,"landing_page_url":"https://doi.org/10.1149/1.3242360","pdf_url":null,"source":{"id":"https://openalex.org/S138759888","display_name":"Journal of The Electrochemical Society","issn_l":"0013-4651","issn":["0013-4651","1945-7111"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of The Electrochemical Society","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1493247923","https://openalex.org/W1576558633","https://openalex.org/W1606134763","https://openalex.org/W1642293796","https://openalex.org/W1975844107","https://openalex.org/W1977647016","https://openalex.org/W1980160439","https://openalex.org/W2040906412","https://openalex.org/W2042231556","https://openalex.org/W2051733846","https://openalex.org/W2062485772","https://openalex.org/W2093038767","https://openalex.org/W2095530109","https://openalex.org/W2172182039","https://openalex.org/W4239163601"],"related_works":["https://openalex.org/W2118262584","https://openalex.org/W2033906688","https://openalex.org/W2004097479","https://openalex.org/W2161322222","https://openalex.org/W2084194503","https://openalex.org/W2059727017","https://openalex.org/W2244064939","https://openalex.org/W2029296450","https://openalex.org/W2106922152","https://openalex.org/W4239163601"],"abstract_inverted_index":{"We":[0],"report":[1],"a":[2],"stable":[3],"Cu-based":[4,96],"contact":[5,40,73,97,146],"stack":[6,41,74,98,147],"to":[7,78,102],"overcome":[8],"Cu":[9,34,72,126,135],"diffusion":[10],"and":[11,70,123],"oxidation":[12],"problems":[13],"encountered":[14],"during":[15],"the":[16,46,51,87,105,109,112],"high":[17],"dielectric":[18],"constant":[19],"oxide":[20],"thin-film":[21,56],"device":[22,57],"integration.":[23],"Our":[24],"Si":[25,27],"\u2215":[26,30,33,141],"O":[28,54,68,84,144],"2":[29],"Ta":[31],"N":[32,37,138],"(":[35,90,136],"Re":[36,137],"x":[38,139],")":[39,95,140],"is":[42,115,127,148],"also":[43],"beneficial":[44],"from":[45],"barrierless":[47,71,134],"scheme":[48],"for":[49,151],"improving":[50],"Ba":[52,66,82,142],"Ti":[53,67,83,143],"3":[55,69,85,145],"performance.":[58],"Interfacial":[59],"investigation":[60],"reveals":[61],"no":[62],"extensive":[63],"interaction":[64],"between":[65],"after":[75],"annealing":[76],"up":[77],"873":[79],"K":[80],".":[81],"on":[86,104],"low":[88],"resistivity":[89],"4.5":[91],"\u03bc":[92],"\u03a9":[93],"cm":[94],"behaves":[99],"fairly":[100],"similar":[101],"that":[103],"Pt":[106],"counterpart":[107],"as":[108],"symmetry":[110],"of":[111],"leakage":[113],"current":[114],"obtained":[116],"using":[117],"different":[118],"work":[119],"function":[120],"contacts":[121],"(Cu":[122],"Pt).":[124],"As":[125],"compatible":[128],"with":[129,153],"integrated":[130],"circuit":[131],"processing,":[132],"our":[133],"readily":[149],"applicable":[150],"integration":[152],"Si-based":[154],"devices.":[155]},"counts_by_year":[{"year":2015,"cited_by_count":2},{"year":2012,"cited_by_count":2}],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}