{"id":"https://openalex.org/W2008296147","doi":"https://doi.org/10.1149/1.2124199","title":"Crystalline Structure Changes of Molybdenum Silicide Films Deposited by Sputtering and by Coevaporation after Isochronal Annealing","display_name":"Crystalline Structure Changes of Molybdenum Silicide Films Deposited by Sputtering and by Coevaporation after Isochronal Annealing","publication_year":1982,"publication_date":"1982-07-01","ids":{"openalex":"https://openalex.org/W2008296147","doi":"https://doi.org/10.1149/1.2124199","mag":"2008296147"},"language":"en","primary_location":{"id":"doi:10.1149/1.2124199","doi":"https://doi.org/10.1149/1.2124199","is_oa":true,"landing_page_url":"https://doi.org/10.1149/1.2124199","pdf_url":"https://iopscience.iop.org/article/10.1149/1.2124199/pdf","source":{"id":"https://openalex.org/S138759888","display_name":"Journal of The Electrochemical Society","issn_l":"0013-4651","issn":["0013-4651","1945-7111"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of The Electrochemical Society","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1149/1.2124199/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5041906456","display_name":"Kenji Shibata","orcid":"https://orcid.org/0000-0002-7167-1704","observed_orcids":["https://orcid.org/0000-0002-7167-1704"]},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kenji Shibata","raw_affiliation_strings":["Toshiba Corporation, Toshiba Research and Development Center, 1, Komukai Toshiba\u2010cho, Saiwai\u2010ku, Kawasaki\u2010city Kanagawa 210 Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Toshiba Corporation, Toshiba Research and Development Center, 1, Komukai Toshiba\u2010cho, Saiwai\u2010ku, Kawasaki\u2010city Kanagawa 210 Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112293268","display_name":"Shohei Shima","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shohei Shima","raw_affiliation_strings":["Toshiba Corporation, Toshiba Research and Development Center, 1, Komukai Toshiba\u2010cho, Saiwai\u2010ku, Kawasaki\u2010city Kanagawa 210 Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Toshiba Corporation, Toshiba Research and Development Center, 1, Komukai Toshiba\u2010cho, Saiwai\u2010ku, Kawasaki\u2010city Kanagawa 210 Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"last","author":{"id":null,"display_name":"Masahiro Kashiwagi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masahiro Kashiwagi","raw_affiliation_strings":["Toshiba Corporation, Toshiba Research and Development Center, 1, Komukai Toshiba\u2010cho, Saiwai\u2010ku, Kawasaki\u2010city Kanagawa 210 Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Toshiba Corporation, Toshiba Research and Development Center, 1, Komukai Toshiba\u2010cho, Saiwai\u2010ku, Kawasaki\u2010city Kanagawa 210 Japan","institution_ids":["https://openalex.org/I1292669757"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I1292669757"],"apc_list":{"value":1950,"currency":"USD","value_usd":1950},"apc_paid":null,"fwci":0.8308,"has_fulltext":true,"cited_by_count":13,"citation_normalized_percentile":{"value":0.66128495,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"129","issue":"7","first_page":"1527","last_page":"1531"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.98580002784729,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.98580002784729,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.006099999882280827,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.002899999963119626,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/molybdenum-silicide","display_name":"molybdenum silicide","score":0.9139999747276306},{"id":"https://openalex.org/keywords/thin-films","display_name":"thin films","score":0.8090000152587891},{"id":"https://openalex.org/keywords/crystal-structure","display_name":"crystal structure","score":0.7480000257492065},{"id":"https://openalex.org/keywords/isochronal-annealing","display_name":"isochronal annealing","score":0.9610000252723694},{"id":"https://openalex.org/keywords/sputter-deposition","display_name":"sputter deposition","score":0.7699999809265137},{"id":"https://openalex.org/keywords/co-evaporation","display_name":"co-evaporation","score":0.9739999771118164},{"id":"https://openalex.org/keywords/carbon-contamination","display_name":"carbon contamination","score":0.6520000100135803},{"id":"https://openalex.org/keywords/surface-oxidation","display_name":"surface oxidation","score":0.9049999713897705},{"id":"https://openalex.org/keywords/amorphous-films","display_name":"amorphous films","score":0.7170000076293945}],"concepts":[{"id":"https://openalex.org/C2780901251","wikidata":"https://www.wikidata.org/wiki/Q426473","display_name":"Silicide","level":3,"score":0.8135145902633667},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7442720532417297},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.7309901118278503},{"id":"https://openalex.org/C549387045","wikidata":"https://www.wikidata.org/wiki/Q1053","display_name":"Molybdenum","level":2,"score":0.693320631980896},{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.6771482229232788},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.6440904140472412},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.5810240507125854},{"id":"https://openalex.org/C170751736","wikidata":"https://www.wikidata.org/wiki/Q503601","display_name":"Tetragonal crystal system","level":3,"score":0.5752539038658142},{"id":"https://openalex.org/C146088050","wikidata":"https://www.wikidata.org/wiki/Q744818","display_name":"Transmission electron microscopy","level":2,"score":0.4694981575012207},{"id":"https://openalex.org/C144082473","wikidata":"https://www.wikidata.org/wiki/Q213185","display_name":"Stoichiometry","level":2,"score":0.4549509882926941},{"id":"https://openalex.org/C61427134","wikidata":"https://www.wikidata.org/wiki/Q847609","display_name":"Sputter deposition","level":4,"score":0.4497947692871094},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.4240332245826721},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.4190112352371216},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4048003852367401},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3547287881374359},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.2906475067138672},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.16728109121322632},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.13477179408073425},{"id":"https://openalex.org/C115624301","wikidata":"https://www.wikidata.org/wiki/Q895901","display_name":"Crystal structure","level":2,"score":0.09976273775100708},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1149/1.2124199","doi":"https://doi.org/10.1149/1.2124199","is_oa":true,"landing_page_url":"https://doi.org/10.1149/1.2124199","pdf_url":"https://iopscience.iop.org/article/10.1149/1.2124199/pdf","source":{"id":"https://openalex.org/S138759888","display_name":"Journal of The Electrochemical Society","issn_l":"0013-4651","issn":["0013-4651","1945-7111"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of The Electrochemical Society","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1149/1.2124199","doi":"https://doi.org/10.1149/1.2124199","is_oa":true,"landing_page_url":"https://doi.org/10.1149/1.2124199","pdf_url":"https://iopscience.iop.org/article/10.1149/1.2124199/pdf","source":{"id":"https://openalex.org/S138759888","display_name":"Journal of The Electrochemical Society","issn_l":"0013-4651","issn":["0013-4651","1945-7111"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of The Electrochemical Society","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2008296147.pdf","grobid_xml":"https://content.openalex.org/works/W2008296147.grobid-xml"},"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2951359443","https://openalex.org/W2090991428","https://openalex.org/W1661605782","https://openalex.org/W2061608002","https://openalex.org/W2010797243","https://openalex.org/W2136485811","https://openalex.org/W2034011376","https://openalex.org/W1970449298","https://openalex.org/W1970468670","https://openalex.org/W1974902346"],"abstract_inverted_index":{"Crystalline":[0],"structure":[1],"changes":[2],"of":[3,20,32,39,46,119,141],"molybdenum":[4,33],"silicide":[5],"films":[6,21,49,131],"after":[7],"isochronal":[8],"annealing":[9,136],"are":[10,41,51,59],"studied":[11],"by":[12,23,113],"x\u2010ray":[13],"and":[14,30,34,53,66,123],"transmission":[15],"electron":[16],"microscopy.":[17],"Two":[18],"types":[19,45],"deposited":[22,130],"sputtering":[24],"from":[25,72],"a":[26],"hot":[27],"pressed":[28],"source":[29],"coevaporation":[31],"silicon,":[35],"with":[36],"controlled":[37],"stoichiometry":[38],",":[40],"prepared.":[42],"For":[43],"both":[44],"depositions,":[47],"the":[48,80,90,102,108,116,120,129,135,142],"that":[50,107,128],"as\u2010deposited":[52],"annealed":[54,63],"at":[55],"temperatures":[56],"below":[57],"350\u00b0C":[58],"amorphous,":[60],"but":[61],"those":[62],"between":[64],"400\u00b0":[65],"600\u00b0C":[67],"show":[68],"hexagonal":[69,73],".":[70],"Transformation":[71],"to":[74,138],"tetragonal":[75],"occurs":[76],"above":[77,87,99,124],"700\u00b0C":[78,125],"for":[79,89,101],"coevaporated":[81],"film,":[82,104],"whereas":[83],"it":[84],"proceeds":[85],"gradually":[86],"800\u00b0C":[88],"sputtered":[91,103,109],"film.":[92],"A":[93],"carbon":[94,114],"stabilized":[95],"phase":[96],"is":[97,111,126],"observed":[98],"750\u00b0C":[100],"which":[105],"suggests":[106],"film":[110,143],"contaminated":[112],"during":[115,134],"deposition.":[117],"Formation":[118],"Mo\u2010rich":[121,133],"silicides":[122],"evidence":[127],"become":[132],"due":[137],"slight":[139],"oxidation":[140],"surface.":[144]},"counts_by_year":[],"updated_date":"2026-09-29T14:09:16.559479","created_date":"2016-06-24T00:00:00"}