{"id":"https://openalex.org/W2007973196","doi":"https://doi.org/10.1109/led.2013.2266123","title":"Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT","display_name":"Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT","publication_year":2013,"publication_date":"2013-06-19","ids":{"openalex":"https://openalex.org/W2007973196","doi":"https://doi.org/10.1109/led.2013.2266123","mag":"2007973196"},"language":"en","primary_location":{"id":"doi:10.1109/led.2013.2266123","doi":"https://doi.org/10.1109/led.2013.2266123","is_oa":false,"landing_page_url":"https://doi.org/10.1109/led.2013.2266123","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5040055808","display_name":"Francois Lecourt","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I2279609970","display_name":"Universit\u00e9 de Lille","ror":"https://ror.org/02kzqn938","country_code":"FR","type":"education","lineage":["https://openalex.org/I2279609970"]},{"id":"https://openalex.org/I4210123471","display_name":"Institut d'Electronique, de Micro\u00e9lectronique et de Nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I2279609970","https://openalex.org/I4210095849","https://openalex.org/I4210116330","https://openalex.org/I4210123471","https://openalex.org/I70348806","https://openalex.org/I7454413"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Francois Lecourt","raw_affiliation_strings":["Microwave Power Devices Group, Institut dElectronique Micro\u00e9lectronique et Nanotechnologie UMR-CNRS, Lille University, Villeneuve d'Ascq, France","Microwave Power Devices Group, Lille Univ., Villeneuve-d'Ascq, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microwave Power Devices Group, Institut dElectronique Micro\u00e9lectronique et Nanotechnologie UMR-CNRS, Lille University, Villeneuve d'Ascq, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I4210123471"]},{"raw_affiliation_string":"Microwave Power Devices Group, Lille Univ., Villeneuve-d'Ascq, France","institution_ids":["https://openalex.org/I2279609970"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055088919","display_name":"Alain Agboton","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I2279609970","display_name":"Universit\u00e9 de Lille","ror":"https://ror.org/02kzqn938","country_code":"FR","type":"education","lineage":["https://openalex.org/I2279609970"]},{"id":"https://openalex.org/I4210123471","display_name":"Institut d'Electronique, de Micro\u00e9lectronique et de Nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I2279609970","https://openalex.org/I4210095849","https://openalex.org/I4210116330","https://openalex.org/I4210123471","https://openalex.org/I70348806","https://openalex.org/I7454413"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Alain Agboton","raw_affiliation_strings":["Microwave Power Devices Group, Institut dElectronique Micro\u00e9lectronique et Nanotechnologie UMR-CNRS, Lille University, Villeneuve d'Ascq, France","Microwave Power Devices Group, Lille Univ., Villeneuve-d'Ascq, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microwave Power Devices Group, Institut dElectronique Micro\u00e9lectronique et Nanotechnologie UMR-CNRS, Lille University, Villeneuve d'Ascq, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I4210123471"]},{"raw_affiliation_string":"Microwave Power Devices Group, Lille Univ., Villeneuve-d'Ascq, France","institution_ids":["https://openalex.org/I2279609970"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047103876","display_name":"Nico Ketteniss","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Nico Ketteniss","raw_affiliation_strings":["GaN Device Technology, RWTH Aachen University, Aachen, Germany","GaN Device Technol., RWTH Aachen Univ., Aachen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GaN Device Technology, RWTH Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]},{"raw_affiliation_string":"GaN Device Technol., RWTH Aachen Univ., Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057118900","display_name":"Hannes Behmenburg","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Hannes Behmenburg","raw_affiliation_strings":["GaN Device Technology, RWTH Aachen University, Aachen, Germany","GaN Device Technol., RWTH Aachen Univ., Aachen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GaN Device Technology, RWTH Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]},{"raw_affiliation_string":"GaN Device Technol., RWTH Aachen Univ., Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038329967","display_name":"Nicolas Defrance","orcid":"https://orcid.org/0000-0002-3944-9652","observed_orcids":["https://orcid.org/0000-0002-3944-9652"]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I2279609970","display_name":"Universit\u00e9 de Lille","ror":"https://ror.org/02kzqn938","country_code":"FR","type":"education","lineage":["https://openalex.org/I2279609970"]},{"id":"https://openalex.org/I4210123471","display_name":"Institut d'Electronique, de Micro\u00e9lectronique et de Nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I2279609970","https://openalex.org/I4210095849","https://openalex.org/I4210116330","https://openalex.org/I4210123471","https://openalex.org/I70348806","https://openalex.org/I7454413"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Nicolas Defrance","raw_affiliation_strings":["Microwave Power Devices Group, Institut dElectronique Micro\u00e9lectronique et Nanotechnologie UMR-CNRS, Lille University, Villeneuve d'Ascq, France","Microwave Power Devices Group, Lille Univ., Villeneuve-d'Ascq, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microwave Power Devices Group, Institut dElectronique Micro\u00e9lectronique et Nanotechnologie UMR-CNRS, Lille University, Villeneuve d'Ascq, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I4210123471"]},{"raw_affiliation_string":"Microwave Power Devices Group, Lille Univ., Villeneuve-d'Ascq, France","institution_ids":["https://openalex.org/I2279609970"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059693495","display_name":"Virginie Hoel","orcid":"https://orcid.org/0000-0003-4652-4742","observed_orcids":["https://orcid.org/0000-0003-4652-4742"]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I2279609970","display_name":"Universit\u00e9 de Lille","ror":"https://ror.org/02kzqn938","country_code":"FR","type":"education","lineage":["https://openalex.org/I2279609970"]},{"id":"https://openalex.org/I4210123471","display_name":"Institut d'Electronique, de Micro\u00e9lectronique et de Nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I2279609970","https://openalex.org/I4210095849","https://openalex.org/I4210116330","https://openalex.org/I4210123471","https://openalex.org/I70348806","https://openalex.org/I7454413"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Virginie Hoel","raw_affiliation_strings":["Microwave Power Devices Group, Institut dElectronique Micro\u00e9lectronique et Nanotechnologie UMR-CNRS, Lille University, Villeneuve d'Ascq, France","Microwave Power Devices Group, Lille Univ., Villeneuve-d'Ascq, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microwave Power Devices Group, Institut dElectronique Micro\u00e9lectronique et Nanotechnologie UMR-CNRS, Lille University, Villeneuve d'Ascq, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I4210123471"]},{"raw_affiliation_string":"Microwave Power Devices Group, Lille Univ., Villeneuve-d'Ascq, France","institution_ids":["https://openalex.org/I2279609970"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046505569","display_name":"H. Kalisch","orcid":"https://orcid.org/0009-0000-4475-3766","observed_orcids":["https://orcid.org/0009-0000-4475-3766"]},"institutions":[{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Holger Kalisch","raw_affiliation_strings":["GaN Device Technology, RWTH Aachen University, Aachen, Germany","GaN Device Technol., RWTH Aachen Univ., Aachen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GaN Device Technology, RWTH Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]},{"raw_affiliation_string":"GaN Device Technol., RWTH Aachen Univ., Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042867835","display_name":"Andrei Vescan","orcid":"https://orcid.org/0000-0001-9465-2621","observed_orcids":["https://orcid.org/0000-0001-9465-2621"]},"institutions":[{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Andrei Vescan","raw_affiliation_strings":["GaN Device Technology, RWTH Aachen University, Aachen, Germany","GaN Device Technol., RWTH Aachen Univ., Aachen, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GaN Device Technology, RWTH Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]},{"raw_affiliation_string":"GaN Device Technol., RWTH Aachen Univ., Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022414227","display_name":"M. Heuken","orcid":"https://orcid.org/0000-0001-9739-9692","observed_orcids":["https://orcid.org/0000-0001-9739-9692"]},"institutions":[{"id":"https://openalex.org/I2801287017","display_name":"Aixtron (Germany)","ror":"https://ror.org/02adgag39","country_code":"DE","type":"company","lineage":["https://openalex.org/I2801287017"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Michael Heuken","raw_affiliation_strings":["AIXTRON SE, Herzogenrath, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"AIXTRON SE, Herzogenrath, Germany","institution_ids":["https://openalex.org/I2801287017"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111829464","display_name":"J.C. de Jaeger","orcid":"https://orcid.org/0000-0002-9033-7672","observed_orcids":["https://orcid.org/0000-0002-9033-7672"]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I2279609970","display_name":"Universit\u00e9 de Lille","ror":"https://ror.org/02kzqn938","country_code":"FR","type":"education","lineage":["https://openalex.org/I2279609970"]},{"id":"https://openalex.org/I4210123471","display_name":"Institut d'Electronique, de Micro\u00e9lectronique et de Nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I2279609970","https://openalex.org/I4210095849","https://openalex.org/I4210116330","https://openalex.org/I4210123471","https://openalex.org/I70348806","https://openalex.org/I7454413"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Jean-Claude De Jaeger","raw_affiliation_strings":["Microwave Power Devices Group, Institut dElectronique Micro\u00e9lectronique et Nanotechnologie UMR-CNRS, Lille University, Villeneuve d'Ascq, France","Microwave Power Devices Group, Lille Univ., Villeneuve-d'Ascq, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microwave Power Devices Group, Institut dElectronique Micro\u00e9lectronique et Nanotechnologie UMR-CNRS, Lille University, Villeneuve d'Ascq, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I4210123471"]},{"raw_affiliation_string":"Microwave Power Devices Group, Lille Univ., Villeneuve-d'Ascq, France","institution_ids":["https://openalex.org/I2279609970"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":1.2743,"has_fulltext":false,"cited_by_count":47,"citation_normalized_percentile":{"value":0.79248852,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":99},"biblio":{"volume":"34","issue":"8","first_page":"978","last_page":"980"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility","display_name":"high electron mobility","score":0.7829999923706055},{"id":"https://openalex.org/keywords/depletion-mode-hemt","display_name":"depletion-mode HEMT","score":0.8650000095367432},{"id":"https://openalex.org/keywords/cutoff-frequency","display_name":"cutoff frequency","score":0.6660000085830688},{"id":"https://openalex.org/keywords/power-gain","display_name":"power gain","score":0.7210000157356262},{"id":"https://openalex.org/keywords/output-power-density","display_name":"output power density","score":0.871999979019165},{"id":"https://openalex.org/keywords/millimeter-wave-transistors","display_name":"millimeter-wave transistors","score":0.7940000295639038},{"id":"https://openalex.org/keywords/t-shaped-gate","display_name":"T-shaped gate","score":0.7250000238418579},{"id":"https://openalex.org/keywords/sapphire-substrate","display_name":"sapphire substrate","score":0.7730000019073486}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7360587120056152},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.46096134185791016},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.42394378781318665},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.4010583758354187},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.39924517273902893},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3273150324821472},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07840070128440857},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07550382614135742},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.07435140013694763}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/led.2013.2266123","doi":"https://doi.org/10.1109/led.2013.2266123","is_oa":false,"landing_page_url":"https://doi.org/10.1109/led.2013.2266123","pdf_url":null,"source":{"id":"https://openalex.org/S19887683","display_name":"IEEE Electron Device Letters","issn_l":"0741-3106","issn":["0741-3106","1558-0563"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-2","norway-1","poland-140","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Electron Device Letters","raw_type":"journal-article"},{"id":"pmh:oai:HAL:hal-00872022v1","doi":null,"is_oa":false,"landing_page_url":"https://hal.science/hal-00872022","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4405252976","host_organization_name":"Centre pour la Communication Scientifique Directe","host_organization_lineage":["https://openalex.org/I4405252976"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Electron Device Letters, 2013, 34, pp.978-980. ⟨10.1109/LED.2013.2266123⟩","raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:oai:publications.rwth-aachen.de:233640","doi":null,"is_oa":false,"landing_page_url":"https://publications.rwth-aachen.de/search?p=id:%22RWTH-CONV-082527%22","pdf_url":null,"source":{"id":"https://openalex.org/S4306401362","display_name":"RWTH Publications (RWTH Aachen)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I887968799","host_organization_name":"RWTH Aachen University","host_organization_lineage":["https://openalex.org/I887968799"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE electron device letters : EDL 34(8), 978-980 (2013). doi:10.1109/LED.2013.2266123","raw_type":"info:eu-repo/semantics/article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1553133211","https://openalex.org/W1976513495","https://openalex.org/W2034570190","https://openalex.org/W2069618557","https://openalex.org/W2104703756","https://openalex.org/W2109649652","https://openalex.org/W2111289411","https://openalex.org/W2123444016","https://openalex.org/W2125864840","https://openalex.org/W2150768402","https://openalex.org/W2151628329","https://openalex.org/W2155188608","https://openalex.org/W2168415825"],"related_works":["https://openalex.org/W2104703756","https://openalex.org/W7096882099","https://openalex.org/W1893065166","https://openalex.org/W2981880629","https://openalex.org/W2572210133","https://openalex.org/W2789916501","https://openalex.org/W2766306758","https://openalex.org/W3088065166","https://openalex.org/W2290682720","https://openalex.org/W1975849574"],"abstract_inverted_index":{"Depletion-mode":[0],"high-electron":[1],"mobility":[2,27],"transistors":[3],"(HEMTs)":[4],"based":[5],"on":[6,12,38],"a":[7,22,47,76,81],"quaternary":[8,106],"barrier":[9],"In0.11Al0.72Ga0.17N/GaN":[10],"heterostructure":[11],"sapphire":[13],"substrate":[14],"are":[15,67],"fabricated":[16],"and":[17,56,64],"characterized.":[18],"This":[19],"structure":[20],"shows":[21],"very":[23],"high":[24],"Hall":[25],"electron":[26],"of":[28,50,62,75,84,92,104],"2200":[29],"cm2/V\u00b7s,":[30],"which":[31],"is":[32],"the":[33,102],"highest":[34],"value":[35],"ever":[36],"reported":[37],"In-containing":[39],"GaN-based":[40],"HEMTs.":[41],"For":[42],"T-shaped":[43,77],"gate":[44,48,78,82],"transistor":[45],"with":[46,80],"length":[49,83],"75":[51],"nm,":[52],"current":[53],"gain":[54,58],"(ft)":[55],"power":[57,90],"(fmax)":[59],"cutoff":[60],"frequencies":[61],"113":[63],"200":[65],"GHz":[66],"extracted":[68],"from":[69],"S-parameter":[70],"measurements,":[71],"respectively.":[72],"Nonlinear":[73],"characterization":[74],"device":[79],"225":[85],"nm":[86],"gives":[87],"an":[88],"output":[89],"density":[91],"2":[93],"W/mm":[94],"at":[95],"40":[96],"GHz.":[97],"These":[98],"results":[99],"clearly":[100],"demonstrate":[101],"capabilities":[103],"such":[105],"barrier-based":[107],"devices.":[108]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":7},{"year":2022,"cited_by_count":8},{"year":2021,"cited_by_count":7},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":2}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}