{"id":"https://openalex.org/W2007884069","doi":"https://doi.org/10.1109/t-ed.1983.21198","title":"Anomalous gate-to-drain capacitance characteristics of GaAs MESFET's","display_name":"Anomalous gate-to-drain capacitance characteristics of GaAs MESFET's","publication_year":1983,"publication_date":"1983-06-01","ids":{"openalex":"https://openalex.org/W2007884069","doi":"https://doi.org/10.1109/t-ed.1983.21198","mag":"2007884069"},"language":"en","primary_location":{"id":"doi:10.1109/t-ed.1983.21198","doi":"https://doi.org/10.1109/t-ed.1983.21198","is_oa":false,"landing_page_url":"https://doi.org/10.1109/t-ed.1983.21198","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5006150695","display_name":"K. Yokoyama","orcid":"https://orcid.org/0000-0003-0286-2416","observed_orcids":["https://orcid.org/0000-0003-0286-2416"]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Yokoyama","raw_affiliation_strings":["Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan","Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Nippon Telegraph and Telephone Public Corporation, Kanagawa, Japan","institution_ids":["https://openalex.org/I2251713219"]},{"raw_affiliation_string":"Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102775389","display_name":"M. Tomizawa","orcid":"https://orcid.org/0000-0002-1888-3863","observed_orcids":["https://orcid.org/0000-0002-1888-3863"]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Tomizawa","raw_affiliation_strings":["Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000119817","display_name":"T. Takada","orcid":"https://orcid.org/0000-0002-5099-8855","observed_orcids":["https://orcid.org/0000-0002-5099-8855"]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Takada","raw_affiliation_strings":["Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111668661","display_name":"A. Yoshii","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"A. Yoshii","raw_affiliation_strings":["Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Japan","institution_ids":["https://openalex.org/I2251713219"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I2251713219"],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":3.8633,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.92516737,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":null,"biblio":{"volume":"30","issue":"6","first_page":"719","last_page":"721"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9398999810218811,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9398999810218811,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.024399999529123306,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.01889999955892563,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gaas-mesfet","display_name":"GaAs MESFET","score":0.9520000219345093},{"id":"https://openalex.org/keywords/gate-drain-capacitance","display_name":"gate-drain capacitance","score":0.9990000128746033},{"id":"https://openalex.org/keywords/two-dimensional-device-simulation","display_name":"two-dimensional device simulation","score":0.8119999766349792},{"id":"https://openalex.org/keywords/charge-carrier-distribution","display_name":"carrier distribution","score":0.7009999752044678}],"concepts":[{"id":"https://openalex.org/C134123091","wikidata":"https://www.wikidata.org/wiki/Q1837339","display_name":"MESFET","level":5,"score":0.8759143352508545},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.7646297812461853},{"id":"https://openalex.org/C2984119601","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Gate voltage","level":4,"score":0.4864380359649658},{"id":"https://openalex.org/C121932024","wikidata":"https://www.wikidata.org/wiki/Q5159376","display_name":"Conductance","level":2,"score":0.4469171166419983},{"id":"https://openalex.org/C36503486","wikidata":"https://www.wikidata.org/wiki/Q11235244","display_name":"Domain (mathematical analysis)","level":2,"score":0.43879082798957825},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4371492266654968},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.41030511260032654},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3819129467010498},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3677983283996582},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3659818768501282},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.35210973024368286},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3518359065055847},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.32948529720306396},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.26258397102355957},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.21772253513336182},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14292988181114197},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.12588286399841309},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.12283596396446228},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.09097707271575928},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.090325266122818},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.07599806785583496}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/t-ed.1983.21198","doi":"https://doi.org/10.1109/t-ed.1983.21198","is_oa":false,"landing_page_url":"https://doi.org/10.1109/t-ed.1983.21198","pdf_url":null,"source":{"id":"https://openalex.org/S162355128","display_name":"IEEE Transactions on Electron Devices","issn_l":"0018-9383","issn":["0018-9383","1557-9646"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-b","jufo-3","norway-2","poland-100","russia-white-list-1"],"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Electron Devices","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W2009610110","https://openalex.org/W2027787009","https://openalex.org/W2049272725","https://openalex.org/W2057864178","https://openalex.org/W2060826425","https://openalex.org/W2108636490"],"related_works":["https://openalex.org/W2095058838","https://openalex.org/W2138967341","https://openalex.org/W2025588561","https://openalex.org/W2105872341","https://openalex.org/W2044147109","https://openalex.org/W1972951673","https://openalex.org/W2054220641","https://openalex.org/W1975082326","https://openalex.org/W2076460565","https://openalex.org/W2169160309"],"abstract_inverted_index":{"Anomalous":[0],"gate-to-drain":[1,48],"capacitance":[2,15],"characteristics":[3,19],"of":[4,42],"GaAs":[5],"MESFET's":[6],"are":[7],"discussed":[8,79],"using":[9],"a":[10,27,34,46,60],"two-dimensional":[11],"device":[12,32],"simulator.":[13],"Gate-to-drain":[14],"CGDshows":[16],"sharp":[17],"undershoot":[18],"with":[20],"an":[21],"increase":[22],"in":[23,84],"drain-to-source":[24],"voltage":[25,49],"VDSfor":[26],"large":[28],"donor":[29],"concentration-thickness":[30],"product":[31],"having":[33],"negative":[35],"drain":[36,66],"conductance.":[37],"By":[38],"analyzing":[39],"the":[40,55,65,69,74,82],"distribution":[41],"carrier":[43],"variation":[44],"against":[45],"small":[47],"change,":[50],"it":[51],"is":[52,77],"found":[53],"that":[54],"CGDundershoot":[56],"occurs":[57],"due":[58],"to":[59,80],"stationary":[61],"domain":[62,75],"formation":[63,76],"at":[64],"side":[67],"under":[68],"gate.":[70],"The":[71],"condition":[72],"for":[73],"also":[78],"clarify":[81],"anomaly":[83],"CGD.":[85]},"counts_by_year":[],"updated_date":"2026-10-02T10:15:12.560889","created_date":"2016-06-24T00:00:00"}