{"id":"https://openalex.org/W2007502363","doi":"https://doi.org/10.1002/pssa.2210880142","title":"Ion beam contacting of silicon. II. Antimony in n-silicon","display_name":"Ion beam contacting of silicon. II. Antimony in n-silicon","publication_year":1985,"publication_date":"1985-03-16","ids":{"openalex":"https://openalex.org/W2007502363","doi":"https://doi.org/10.1002/pssa.2210880142","mag":"2007502363"},"language":"en","primary_location":{"id":"doi:10.1002/pssa.2210880142","doi":"https://doi.org/10.1002/pssa.2210880142","is_oa":false,"landing_page_url":"https://doi.org/10.1002/pssa.2210880142","pdf_url":null,"source":{"id":"https://openalex.org/S4210228582","display_name":"physica status solidi (a)","issn_l":"0031-8965","issn":["0031-8965","1521-396X","1862-6300","1862-6319"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"physica status solidi (a)","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5054033758","display_name":"A. Mertens","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I39343248","display_name":"Humboldt-Universit\u00e4t zu Berlin","ror":"https://ror.org/01hcx6992","country_code":"DE","type":"education","lineage":["https://openalex.org/I39343248"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"A. Mertens","raw_affiliation_strings":["Sektion Physik der Humboldt- Universita\u0308t zu Berlin, Bereich Atomsto\u00dfprozesse der Festko\u0308rperphysik","Sektion Physik der Humboldt-Universit\u00e4t zu Berlin, (Bereich Atomsto\u00dfprozesse der Festk\u00f6rperphysik \u2020"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sektion Physik der Humboldt- Universita\u0308t zu Berlin, Bereich Atomsto\u00dfprozesse der Festko\u0308rperphysik","institution_ids":["https://openalex.org/I39343248"]},{"raw_affiliation_string":"Sektion Physik der Humboldt-Universit\u00e4t zu Berlin, (Bereich Atomsto\u00dfprozesse der Festk\u00f6rperphysik \u2020","institution_ids":["https://openalex.org/I39343248"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113656804","display_name":"Heinz A. Klose","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I39343248","display_name":"Humboldt-Universit\u00e4t zu Berlin","ror":"https://ror.org/01hcx6992","country_code":"DE","type":"education","lineage":["https://openalex.org/I39343248"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"H. Klose","raw_affiliation_strings":["Sektion Physik der Humboldt- Universita\u0308t zu Berlin, Bereich Atomsto\u00dfprozesse der Festko\u0308rperphysik","Sektion Physik der Humboldt-Universit\u00e4t zu Berlin, (Bereich Atomsto\u00dfprozesse der Festk\u00f6rperphysik \u2020"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sektion Physik der Humboldt- Universita\u0308t zu Berlin, Bereich Atomsto\u00dfprozesse der Festko\u0308rperphysik","institution_ids":["https://openalex.org/I39343248"]},{"raw_affiliation_string":"Sektion Physik der Humboldt-Universit\u00e4t zu Berlin, (Bereich Atomsto\u00dfprozesse der Festk\u00f6rperphysik \u2020","institution_ids":["https://openalex.org/I39343248"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5081521650","display_name":"Ng. Tang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I39343248","display_name":"Humboldt-Universit\u00e4t zu Berlin","ror":"https://ror.org/01hcx6992","country_code":"DE","type":"education","lineage":["https://openalex.org/I39343248"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Ng. Tang","raw_affiliation_strings":["Sektion Physik der Humboldt- Universita\u0308t zu Berlin, Bereich Atomsto\u00dfprozesse der Festko\u0308rperphysik","Sektion Physik der Humboldt-Universit\u00e4t zu Berlin, (Bereich Atomsto\u00dfprozesse der Festk\u00f6rperphysik \u2020"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sektion Physik der Humboldt- Universita\u0308t zu Berlin, Bereich Atomsto\u00dfprozesse der Festko\u0308rperphysik","institution_ids":["https://openalex.org/I39343248"]},{"raw_affiliation_string":"Sektion Physik der Humboldt-Universit\u00e4t zu Berlin, (Bereich Atomsto\u00dfprozesse der Festk\u00f6rperphysik \u2020","institution_ids":["https://openalex.org/I39343248"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I39343248"],"apc_list":{"value":3780,"currency":"USD","value_usd":3780},"apc_paid":null,"fwci":0.2383,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.50121494,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"88","issue":"1","first_page":"369","last_page":"374"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9937000274658203,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9937000274658203,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.003599999938160181,"subfield":{"id":"https://openalex.org/subfields/2206","display_name":"Computational Mechanics"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.0010000000474974513,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ion-implantation","display_name":"ion implantation","score":0.8050000071525574},{"id":"https://openalex.org/keywords/antimony","display_name":"antimony","score":0.9390000104904175},{"id":"https://openalex.org/keywords/n-type-silicon","display_name":"n-type silicon","score":0.9929999709129333},{"id":"https://openalex.org/keywords/metal-semiconductor-junction","display_name":"metal-semiconductor contacts","score":0.7960000038146973},{"id":"https://openalex.org/keywords/contact-resistivity","display_name":"contact resistivity","score":0.9829999804496765},{"id":"https://openalex.org/keywords/annealing","display_name":"annealing","score":0.6679999828338623},{"id":"https://openalex.org/keywords/current-voltage-characteristics","display_name":"current-voltage characteristics","score":0.7080000042915344},{"id":"https://openalex.org/keywords/rutherford-backscattering-spectrometry","display_name":"Rutherford backscattering spectrometry","score":0.8019999861717224}],"concepts":[{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.7154525518417358},{"id":"https://openalex.org/C541565711","wikidata":"https://www.wikidata.org/wiki/Q1099","display_name":"Antimony","level":2,"score":0.7054561972618103},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6819379925727844},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5582289099693298},{"id":"https://openalex.org/C69990965","wikidata":"https://www.wikidata.org/wiki/Q65402698","display_name":"Electrical resistivity and conductivity","level":2,"score":0.5239700675010681},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.45291635394096375},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.43264853954315186},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2418312430381775},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.12716838717460632},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.10546597838401794},{"id":"https://openalex.org/C179104552","wikidata":"https://www.wikidata.org/wiki/Q11165","display_name":"Inorganic chemistry","level":1,"score":0.10182788968086243},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.05639803409576416},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1002/pssa.2210880142","doi":"https://doi.org/10.1002/pssa.2210880142","is_oa":false,"landing_page_url":"https://doi.org/10.1002/pssa.2210880142","pdf_url":null,"source":{"id":"https://openalex.org/S4210228582","display_name":"physica status solidi (a)","issn_l":"0031-8965","issn":["0031-8965","1521-396X","1862-6300","1862-6319"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310320595","host_organization_name":"Wiley","host_organization_lineage":["https://openalex.org/P4310320595"],"host_organization_lineage_names":["Wiley"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"physica status solidi (a)","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1996548838","https://openalex.org/W2026061978","https://openalex.org/W2135277126","https://openalex.org/W2152022850","https://openalex.org/W2159913145","https://openalex.org/W2494739996","https://openalex.org/W3135306692"],"related_works":["https://openalex.org/W1996548838","https://openalex.org/W2087674068","https://openalex.org/W2316370999","https://openalex.org/W2613979958","https://openalex.org/W4413647017","https://openalex.org/W4381745419","https://openalex.org/W1970964055","https://openalex.org/W2077510084","https://openalex.org/W2318973850","https://openalex.org/W2060109916"],"abstract_inverted_index":{"Low-energy":[0],"high-dose":[1],"ion":[2],"implantation":[3],"of":[4,21,89],"antimony":[5],"atoms":[6],"in":[7],"n-type":[8,68],"silicon":[9,69],"is":[10,46,83],"used":[11],"to":[12,48],"form":[13],"high":[14,87],"conductive":[15,67],"contact":[16,27,39,70],"resistivities.":[17],"For":[18],"the":[19,22,26,29,90],"characterization":[20],"implanted":[23],"metal-semiconductor":[24],"junctions":[25],"resistivity,":[28],"current":[30],"density-voltage":[31],"graphs":[32],"and":[33,54,77,92],"RBS-spectra":[34],"are":[35],"determined.":[36],"The":[37,81],"lowest":[38],"resistivity":[40],"without":[41],"a":[42,56,86],"special":[43],"annealing":[44,94],"procedure":[45],"measured":[47],"be":[49,73],"about":[50],"10\u22124":[51,76],"\u03a9":[52,62,79],"cm2":[53],"with":[55],"673":[57],"K":[58],"annealing,":[59],"below":[60],"10\u22125":[61,78],"cm2.":[63,80],"Especially":[64],"for":[65],"low":[66,93],"resistivities":[71],"can":[72],"realized":[74],"between":[75],"method":[82],"characterized":[84],"by":[85],"reproducibility":[88],"results":[91],"temperatures.":[95]},"counts_by_year":[],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}