{"id":"https://openalex.org/W2007455808","doi":"https://doi.org/10.1063/1.117830","title":"Self-assembling GaN quantum dots on AlxGa1\u2212xN surfaces using a surfactant","display_name":"Self-assembling GaN quantum dots on AlxGa1\u2212xN surfaces using a surfactant","publication_year":1996,"publication_date":"1996-12-23","ids":{"openalex":"https://openalex.org/W2007455808","doi":"https://doi.org/10.1063/1.117830","mag":"2007455808"},"language":"en","primary_location":{"id":"doi:10.1063/1.117830","doi":"https://doi.org/10.1063/1.117830","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.117830","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5016583345","display_name":"\u609f \u7530\u4e2d","orcid":"https://orcid.org/0000-0002-0939-8698","observed_orcids":["https://orcid.org/0000-0002-0939-8698","https://orcid.org/0000-0003-0426-0427"]},"institutions":[{"id":"https://openalex.org/I4210110652","display_name":"RIKEN","ror":"https://ror.org/01sjwvz98","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210110652"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Satoru Tanaka","raw_affiliation_strings":["The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan","institution_ids":["https://openalex.org/I4210110652"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111753621","display_name":"Sohachi Iwai","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210110652","display_name":"RIKEN","ror":"https://ror.org/01sjwvz98","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210110652"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Sohachi Iwai","raw_affiliation_strings":["The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan","institution_ids":["https://openalex.org/I4210110652"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100831980","display_name":"Yoshinobu Aoyagi","orcid":"https://orcid.org/0009-0000-2732-6498","observed_orcids":["https://orcid.org/0009-0000-2732-6498"]},"institutions":[{"id":"https://openalex.org/I4210110652","display_name":"RIKEN","ror":"https://ror.org/01sjwvz98","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210110652"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yoshinobu Aoyagi","raw_affiliation_strings":["The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan","institution_ids":["https://openalex.org/I4210110652"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210110652"],"apc_list":null,"apc_paid":null,"fwci":8.8114,"has_fulltext":false,"cited_by_count":278,"citation_normalized_percentile":{"value":0.98683667,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":87,"max":99},"biblio":{"volume":"69","issue":"26","first_page":"4096","last_page":"4098"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.0003000000142492354,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gan-quantum-dots","display_name":"GaN quantum dots","score":0.9860000014305115},{"id":"https://openalex.org/keywords/self-assembly","display_name":"self-assembly","score":0.765999972820282},{"id":"https://openalex.org/keywords/algan","display_name":"AlGaN","score":0.7609999775886536},{"id":"https://openalex.org/keywords/surfactants","display_name":"surfactants","score":0.925000011920929},{"id":"https://openalex.org/keywords/surface-energy","display_name":"surface energy","score":0.8989999890327454},{"id":"https://openalex.org/keywords/growth-temperature","display_name":"growth temperature","score":0.5479999780654907},{"id":"https://openalex.org/keywords/aluminum-content","display_name":"aluminum content","score":0.7300000190734863},{"id":"https://openalex.org/keywords/photoluminescence","display_name":"photoluminescence","score":0.8209999799728394},{"id":"https://openalex.org/keywords/metal-organic-chemical-vapor-deposition","display_name":"metalorganic chemical vapor deposition","score":0.8840000033378601}],"concepts":[{"id":"https://openalex.org/C124657808","wikidata":"https://www.wikidata.org/wiki/Q1133068","display_name":"Quantum dot","level":2,"score":0.7853409051895142},{"id":"https://openalex.org/C2781201450","wikidata":"https://www.wikidata.org/wiki/Q7990177","display_name":"Wetting layer","level":3,"score":0.7734888792037964},{"id":"https://openalex.org/C85080765","wikidata":"https://www.wikidata.org/wiki/Q614893","display_name":"Photoluminescence","level":2,"score":0.7716773748397827},{"id":"https://openalex.org/C58226133","wikidata":"https://www.wikidata.org/wiki/Q1324199","display_name":"Pulmonary surfactant","level":2,"score":0.7367845177650452},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7025338411331177},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.619650661945343},{"id":"https://openalex.org/C2778024649","wikidata":"https://www.wikidata.org/wiki/Q410572","display_name":"Silane","level":2,"score":0.5822688341140747},{"id":"https://openalex.org/C134514944","wikidata":"https://www.wikidata.org/wiki/Q817136","display_name":"Wetting","level":2,"score":0.5594487190246582},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5164018273353577},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.4888269305229187},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.48320162296295166},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.47739166021347046},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.46017447113990784},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.43399178981781006},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.27836406230926514},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.13401612639427185},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1063/1.117830","doi":"https://doi.org/10.1063/1.117830","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.117830","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},{"id":"pmh:oai:irdb.nii.ac.jp:00897:0003886151","doi":null,"is_oa":false,"landing_page_url":"http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100462527","pdf_url":null,"source":{"id":"https://openalex.org/S7407056385","display_name":"Institutional Repositories DataBase (IRDB)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I184597095","host_organization_name":"National Institute of Informatics","host_organization_lineage":["https://openalex.org/I184597095"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Appl.Phys.Lett.","raw_type":"journal article"},{"id":"pmh:oai:t2r2.star.titech.ac.jp:00058718","doi":null,"is_oa":false,"landing_page_url":"http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100455829","pdf_url":null,"source":{"id":"https://openalex.org/S4377196385","display_name":"Tokyo Tech Research Repository (Tokyo Institute of Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I114531698","host_organization_name":"Tokyo Institute of Technology","host_organization_lineage":["https://openalex.org/I114531698"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Journal Article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":1,"referenced_works":["https://openalex.org/W1577676867"],"related_works":["https://openalex.org/W2328438075","https://openalex.org/W2082659685","https://openalex.org/W7071596609","https://openalex.org/W2167409090","https://openalex.org/W2090441871","https://openalex.org/W1581377937","https://openalex.org/W1964281845","https://openalex.org/W2019149164","https://openalex.org/W2331176684","https://openalex.org/W2062782066"],"abstract_inverted_index":{"Nanoscale":[0],"GaN":[1,30,63,83,122],"quantum":[2],"dots":[3,84,123],"were":[4,85],"fabricated":[5],"on":[6,32],"AlxGa1\u2212xN":[7,33,107],"layer":[8],"surfaces":[9,35],"via":[10],"metalorganic":[11],"chemical":[12],"vapor":[13],"deposition.":[14],"In":[15],"order":[16],"to":[17,60,71,87,90],"achieve":[18],"a":[19,23,49,54,99],"self-assembling":[20],"dot":[21],"structure,":[22],"two-dimensional":[24],"growth":[25,43,111],"mode":[26,51],"(step":[27],"flow)":[28],"of":[29,82,94,105],"films":[31],"(x=0\u20130.2)":[34],"that":[36],"is":[37,58],"energetically":[38],"commenced":[39],"under":[40],"the":[41,62,67,72,91,101,106,110,121,126],"conventional":[42],"conditions":[44],"was":[45,118],"intentionally":[46],"modified":[47],"into":[48],"three-dimensional":[50],"by":[52],"using":[53],"\u2018\u2018surfactant.\u2019\u2019":[55],"The":[56,78],"surfactant":[57],"believed":[59],"inhibit":[61],"film":[64],"from":[65,120],"wetting":[66],"AlGaN":[68,127],"surface":[69,75],"due":[70],"change":[73],"in":[74,125],"free":[76],"energy.":[77],"resulting":[79],"morphological":[80],"structures":[81],"found":[86],"be":[88],"sensitive":[89],"doping":[92],"rate":[93],"tetraethyl":[95],"silane":[96],"used":[97],"as":[98],"surfactant,":[100],"Al":[102],"content":[103],"(x)":[104],"layer,":[108],"and":[109],"temperature.":[112],"A":[113],"very":[114],"intense":[115],"photoluminescence":[116],"emission":[117],"observed":[119],"embedded":[124],"layers.":[128]},"counts_by_year":[{"year":2024,"cited_by_count":5},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":5},{"year":2018,"cited_by_count":5},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":4},{"year":2015,"cited_by_count":6},{"year":2014,"cited_by_count":9},{"year":2013,"cited_by_count":7},{"year":2012,"cited_by_count":6}],"updated_date":"2026-11-10T11:39:43.021295","created_date":"2016-06-24T00:00:00"}