{"id":"https://openalex.org/W2007241394","doi":"https://doi.org/10.1063/1.1328768","title":"Elemental B distributions and clustering in low-energy B+ ion-implanted Si","display_name":"Elemental B distributions and clustering in low-energy B+ ion-implanted Si","publication_year":2000,"publication_date":"2000-11-27","ids":{"openalex":"https://openalex.org/W2007241394","doi":"https://doi.org/10.1063/1.1328768","mag":"2007241394"},"language":"en","primary_location":{"id":"doi:10.1063/1.1328768","doi":"https://doi.org/10.1063/1.1328768","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1328768","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5021329349","display_name":"T.-S. Wang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I91136226","display_name":"University of Sheffield","ror":"https://ror.org/05krs5044","country_code":"GB","type":"education","lineage":["https://openalex.org/I91136226"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"T.-S. Wang","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD United Kingdom","institution_ids":["https://openalex.org/I91136226"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024773977","display_name":"A.G. Cullis","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I91136226","display_name":"University of Sheffield","ror":"https://ror.org/05krs5044","country_code":"GB","type":"education","lineage":["https://openalex.org/I91136226"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"A. G. Cullis","raw_affiliation_strings":["Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD United Kingdom","institution_ids":["https://openalex.org/I91136226"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110338053","display_name":"E. J. H. Collart","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210087370","display_name":"Applied Materials (United Kingdom)","ror":"https://ror.org/006471y50","country_code":"GB","type":"company","lineage":["https://openalex.org/I193427800","https://openalex.org/I4210087370"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"E. J. H. Collart","raw_affiliation_strings":["Applied Materials, Thermal Processing and Implant Division, Foundry Lane, Horsham, West Sussex, RH13 5PY United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Applied Materials, Thermal Processing and Implant Division, Foundry Lane, Horsham, West Sussex, RH13 5PY United Kingdom","institution_ids":["https://openalex.org/I4210087370"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059074078","display_name":"Adrian J. Murrell","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210087370","display_name":"Applied Materials (United Kingdom)","ror":"https://ror.org/006471y50","country_code":"GB","type":"company","lineage":["https://openalex.org/I193427800","https://openalex.org/I4210087370"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"A. J. Murrell","raw_affiliation_strings":["Applied Materials, Thermal Processing and Implant Division, Foundry Lane, Horsham, West Sussex, RH13 5PY United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Applied Materials, Thermal Processing and Implant Division, Foundry Lane, Horsham, West Sussex, RH13 5PY United Kingdom","institution_ids":["https://openalex.org/I4210087370"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5075204354","display_name":"Majeed A. Foad","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I193427800","display_name":"Applied Materials (United States)","ror":"https://ror.org/04h1q4c89","country_code":"US","type":"company","lineage":["https://openalex.org/I193427800"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. A. Foad","raw_affiliation_strings":["Applied Materials, Transistor Doping and Junction Division, 3050 Bowers Avenue, Santa Clara, California 95054"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Applied Materials, Transistor Doping and Junction Division, 3050 Bowers Avenue, Santa Clara, California 95054","institution_ids":["https://openalex.org/I193427800"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.5901,"has_fulltext":false,"cited_by_count":19,"citation_normalized_percentile":{"value":0.92981644,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"77","issue":"22","first_page":"3586","last_page":"3588"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.9911999702453613,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.9911999702453613,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0052999998442828655,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.002099999925121665,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/boron-implantation","display_name":"boron implantation","score":0.9879999756813049},{"id":"https://openalex.org/keywords/silicon","display_name":"silicon","score":0.8009999990463257},{"id":"https://openalex.org/keywords/low-energy-ion-implantation","display_name":"low-energy ion implantation","score":0.7929999828338623},{"id":"https://openalex.org/keywords/concentration-profiles","display_name":"concentration profiles","score":0.5180000066757202},{"id":"https://openalex.org/keywords/energy-filtered-imaging","display_name":"energy-filtered imaging","score":0.7020000219345093},{"id":"https://openalex.org/keywords/post-implantation-annealing","display_name":"post-implantation annealing","score":0.6330000162124634}],"concepts":[{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.7267319560050964},{"id":"https://openalex.org/C41823505","wikidata":"https://www.wikidata.org/wiki/Q1436752","display_name":"Ion implantation","level":3,"score":0.6747126579284668},{"id":"https://openalex.org/C77066764","wikidata":"https://www.wikidata.org/wiki/Q178674","display_name":"Nanometre","level":2,"score":0.6518783569335938},{"id":"https://openalex.org/C146088050","wikidata":"https://www.wikidata.org/wiki/Q744818","display_name":"Transmission electron microscopy","level":2,"score":0.6481012105941772},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.6433548927307129},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6024414896965027},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5542084574699402},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5431380271911621},{"id":"https://openalex.org/C77671233","wikidata":"https://www.wikidata.org/wiki/Q556046","display_name":"Secondary ion mass spectrometry","level":3,"score":0.4864620864391327},{"id":"https://openalex.org/C64885871","wikidata":"https://www.wikidata.org/wiki/Q2533665","display_name":"Elemental analysis","level":2,"score":0.4467487931251526},{"id":"https://openalex.org/C41999313","wikidata":"https://www.wikidata.org/wiki/Q489328","display_name":"Molecular physics","level":1,"score":0.34610995650291443},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.27564048767089844},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.18215543031692505},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.14003142714500427},{"id":"https://openalex.org/C179104552","wikidata":"https://www.wikidata.org/wiki/Q11165","display_name":"Inorganic chemistry","level":1,"score":0.0755009651184082},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.06735292077064514},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.1328768","doi":"https://doi.org/10.1063/1.1328768","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1328768","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1533462079","https://openalex.org/W1627555696","https://openalex.org/W1967007879","https://openalex.org/W1984356524","https://openalex.org/W1989564944","https://openalex.org/W1991287871","https://openalex.org/W2000336171","https://openalex.org/W2015144097","https://openalex.org/W2024172140","https://openalex.org/W2035205264","https://openalex.org/W2044607392","https://openalex.org/W2064606745","https://openalex.org/W2064921423","https://openalex.org/W2071610772","https://openalex.org/W2081875192","https://openalex.org/W2093425031","https://openalex.org/W2137837405"],"related_works":["https://openalex.org/W1990918077","https://openalex.org/W2063602026","https://openalex.org/W2070442217","https://openalex.org/W2006372157","https://openalex.org/W2013493318","https://openalex.org/W2000336171","https://openalex.org/W2013608688","https://openalex.org/W1972266599","https://openalex.org/W2607895016","https://openalex.org/W1995717040"],"abstract_inverted_index":{"A":[0],"detailed":[1],"study":[2],"is":[3,53,106],"presented":[4],"of":[5,80,93],"characteristic":[6],"elemental":[7,111],"B":[8,61,104],"distributions":[9],"in":[10,34],"Si":[11,120],"produced":[12],"by":[13,85,108],"low-energy":[14],"B+":[15,41],"ion":[16,42,87],"implantation":[17],"and":[18,74],"annealing.":[19],"Implant":[20],"concentration":[21,66],"profiles":[22],"have":[23],"been":[24],"determined":[25],"with":[26,71],"approximately":[27],"nanometer":[28],"spatial":[29],"resolution":[30],"using":[31],"energy-filtered":[32],"imaging":[33],"the":[35,59,81,94,96,102,118],"transmission":[36],"electron":[37],"microscope,":[38],"for":[39,56],"a":[40,64],"dose":[43],"close":[44],"to":[45,48],"those":[46],"relevant":[47],"electronic":[49],"device":[50],"processing.":[51],"It":[52],"demonstrated":[54],"that,":[55],"as-implanted":[57],"Si,":[58],"near-surface":[60],"distribution":[62,105],"shows":[63,75],"smooth":[65],"peak":[67],"which":[68,113],"correlates":[69],"well":[70],"theoretical":[72],"simulation":[73],"no":[76],"anomalous":[77],"surface":[78],"buildup":[79],"type":[82],"generally":[83],"indicated":[84],"secondary":[86],"mass":[88],"spectrometry":[89],"measurements.":[90],"After":[91],"annealing":[92],"layers,":[95],"present":[97],"direct":[98],"observations":[99],"reveal":[100],"that":[101],"final":[103],"characterized":[107],"residual":[109],"nanometer-scale":[110],"clusters":[112],"comprise":[114],"disordered":[115],"zones":[116],"within":[117],"restructured":[119],"lattice.":[121]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2026-09-26T08:19:03.415552","created_date":"2016-06-24T00:00:00"}