{"id":"https://openalex.org/W2006066377","doi":"https://doi.org/10.1049/el:19920203","title":"High speed non-selfaligned GaInP/GaAs-TEBT","display_name":"High speed non-selfaligned GaInP/GaAs-TEBT","publication_year":1992,"publication_date":"1992-01-30","ids":{"openalex":"https://openalex.org/W2006066377","doi":"https://doi.org/10.1049/el:19920203","mag":"2006066377"},"language":"en","primary_location":{"id":"doi:10.1049/el:19920203","doi":"https://doi.org/10.1049/el:19920203","is_oa":false,"landing_page_url":"https://doi.org/10.1049/el:19920203","pdf_url":null,"source":{"id":"https://openalex.org/S149016011","display_name":"Electronics Letters","issn_l":"0013-5194","issn":["0013-5194","1350-911X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1","norway-1","oarl","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electronics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref","doaj"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5018418202","display_name":"P. Zwicknagl","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1325886976","display_name":"Siemens (Germany)","ror":"https://ror.org/059mq0909","country_code":"DE","type":"company","lineage":["https://openalex.org/I1325886976"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"P. Zwicknagl","raw_affiliation_strings":["Research Laboratories, Siemens AG, Otto Hahn Ring 6, M\u00fcnchen, D-8000 83, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Laboratories, Siemens AG, Otto Hahn Ring 6, M\u00fcnchen, D-8000 83, Germany","institution_ids":["https://openalex.org/I1325886976"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061119542","display_name":"U. Schaper","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1325886976","display_name":"Siemens (Germany)","ror":"https://ror.org/059mq0909","country_code":"DE","type":"company","lineage":["https://openalex.org/I1325886976"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"U. Schaper","raw_affiliation_strings":["Research Laboratories, Siemens AG, Otto Hahn Ring 6, M\u00fcnchen, D-8000 83, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Laboratories, Siemens AG, Otto Hahn Ring 6, M\u00fcnchen, D-8000 83, Germany","institution_ids":["https://openalex.org/I1325886976"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060149283","display_name":"L. Schleicher","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1325886976","display_name":"Siemens (Germany)","ror":"https://ror.org/059mq0909","country_code":"DE","type":"company","lineage":["https://openalex.org/I1325886976"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"L. Schleicher","raw_affiliation_strings":["Research Laboratories, Siemens AG, Otto Hahn Ring 6, M\u00fcnchen, D-8000 83, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Laboratories, Siemens AG, Otto Hahn Ring 6, M\u00fcnchen, D-8000 83, Germany","institution_ids":["https://openalex.org/I1325886976"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052883377","display_name":"H.J. Siweris","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1325886976","display_name":"Siemens (Germany)","ror":"https://ror.org/059mq0909","country_code":"DE","type":"company","lineage":["https://openalex.org/I1325886976"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"H. Siweris","raw_affiliation_strings":["Research Laboratories, Siemens AG, Otto Hahn Ring 6, M\u00fcnchen, D-8000 83, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Research Laboratories, Siemens AG, Otto Hahn Ring 6, M\u00fcnchen, D-8000 83, Germany","institution_ids":["https://openalex.org/I1325886976"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025755862","display_name":"K. H. Bachem","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210090068","display_name":"Fraunhofer Institute for Applied Solid State Physics","ror":"https://ror.org/0083ncs46","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210090068","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"K.H. Bachem","raw_affiliation_strings":["Fraunhofer-Institut f\u00fcr Angewandte Festk\u00f6rperphysik, Freiburg, D-7800, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer-Institut f\u00fcr Angewandte Festk\u00f6rperphysik, Freiburg, D-7800, Germany","institution_ids":["https://openalex.org/I4210090068"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089146450","display_name":"Th. Lauterbach","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210090068","display_name":"Fraunhofer Institute for Applied Solid State Physics","ror":"https://ror.org/0083ncs46","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210090068","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"T. Lauterbach","raw_affiliation_strings":["Fraunhofer-Institut f\u00fcr Angewandte Festk\u00f6rperphysik, Freiburg, D-7800, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer-Institut f\u00fcr Angewandte Festk\u00f6rperphysik, Freiburg, D-7800, Germany","institution_ids":["https://openalex.org/I4210090068"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5008334370","display_name":"Wilfried Pletschen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210090068","display_name":"Fraunhofer Institute for Applied Solid State Physics","ror":"https://ror.org/0083ncs46","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210090068","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"W. Pletschen","raw_affiliation_strings":["Fraunhofer-Institut f\u00fcr Angewandte Festk\u00f6rperphysik, Freiburg, D-7800, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fraunhofer-Institut f\u00fcr Angewandte Festk\u00f6rperphysik, Freiburg, D-7800, Germany","institution_ids":["https://openalex.org/I4210090068"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2590,"currency":"USD","value_usd":2590},"apc_paid":null,"fwci":4.6355,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.94640203,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":null,"biblio":{"volume":"28","issue":"3","first_page":"327","last_page":"328"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.8521000146865845,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.8521000146865845,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.04809999838471413,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.022099999710917473,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gainp-gaas-heterostructures","display_name":"GaInP/GaAs heterostructures","score":0.8360000252723694},{"id":"https://openalex.org/keywords/high-frequency-transistors","display_name":"high-frequency transistors","score":0.6190000176429749},{"id":"https://openalex.org/keywords/rf-performance","display_name":"RF performance","score":0.421999990940094},{"id":"https://openalex.org/keywords/base-sheet-resistance","display_name":"base sheet resistance","score":0.7110000252723694},{"id":"https://openalex.org/keywords/mocvd-growth","display_name":"MOCVD growth","score":0.6840000152587891}],"concepts":[{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6094710230827332},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.5408523678779602},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5336201190948486},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.332194447517395},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.32980161905288696},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21999713778495789}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1049/el:19920203","doi":"https://doi.org/10.1049/el:19920203","is_oa":false,"landing_page_url":"https://doi.org/10.1049/el:19920203","pdf_url":null,"source":{"id":"https://openalex.org/S149016011","display_name":"Electronics Letters","issn_l":"0013-5194","issn":["0013-5194","1350-911X"],"is_oa":false,"is_in_doaj":true,"is_core":true,"listed_in":["cwts-core","doaj","dongbi-d","jufo-1","norway-1","oarl","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Electronics Letters","raw_type":"journal-article"},{"id":"pmh:oai:publica.fraunhofer.de:publica/181444","doi":null,"is_oa":false,"landing_page_url":"https://publica.fraunhofer.de/handle/publica/181444","pdf_url":null,"source":{"id":"https://openalex.org/S4306400318","display_name":"Fraunhofer-Publica (Fraunhofer-Gesellschaft)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4923324","host_organization_name":"Fraunhofer-Gesellschaft","host_organization_lineage":["https://openalex.org/I4923324"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"journal article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2052210024","https://openalex.org/W2088757726","https://openalex.org/W2144216499"],"related_works":["https://openalex.org/W2052852366","https://openalex.org/W2045507612","https://openalex.org/W2054528100","https://openalex.org/W2127615236","https://openalex.org/W2034850696","https://openalex.org/W2126074977","https://openalex.org/W2136393533","https://openalex.org/W2064903601","https://openalex.org/W2144216499","https://openalex.org/W1504388016"],"abstract_inverted_index":{"Tunnelling":[0],"emitter":[1,12],"bipolar":[2],"transistors":[3],"(TEBTs)":[4],"with":[5,61],"a":[6,17,45,56],"10":[7],"nm":[8],"GaInP":[9],"layer":[10,33,39],"between":[11],"and":[13,52,66],"base":[14,38,46],"acting":[15],"as":[16],"hole":[18],"repelling":[19],"potential":[20],"barrier":[21],"in":[22],"the":[23],"valence":[24],"band":[25],"have":[26],"been":[27],"fabricated":[28],"from":[29],"MOCVD":[30],"grown":[31],"Ga0.5In0.5P/GaAs":[32],"structures.":[34],"The":[35],"carbon":[36],"doped":[37],"(110nm,":[40],"6.5":[41],"\u00d7":[42],"1019cm-3)":[43],"exhibits":[44],"sheet":[47],"resistance":[48],"of":[49,55],"100\u03a9/\u25a1.":[50],"DC":[51],"RF":[53],"characterisation":[54],"non-selfaligned":[57],"GaAs":[58],"asymmetric":[59],"TEBT":[60],"fr":[62],">":[63,68],"40":[64],"GHz":[65,70],"fmax":[67],"90":[69],"are":[71],"reported.":[72]},"counts_by_year":[],"updated_date":"2026-09-22T06:50:58.402377","created_date":"2016-06-24T00:00:00"}