{"id":"https://openalex.org/W2006035075","doi":"https://doi.org/10.1063/1.2949700","title":"Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability","display_name":"Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability","publication_year":2008,"publication_date":"2008-08-01","ids":{"openalex":"https://openalex.org/W2006035075","doi":"https://doi.org/10.1063/1.2949700","mag":"2006035075"},"language":"en","primary_location":{"id":"doi:10.1063/1.2949700","doi":"https://doi.org/10.1063/1.2949700","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.2949700","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5055178988","display_name":"Neil M. Zimmerman","orcid":"https://orcid.org/0000-0002-7129-1883","observed_orcids":["https://orcid.org/0000-0002-7129-1883"]},"institutions":[{"id":"https://openalex.org/I1321296531","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416","country_code":"US","type":"government","lineage":["https://openalex.org/I1321296531","https://openalex.org/I1343035065"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Neil M. Zimmerman","raw_affiliation_strings":["National Institute of Standards and Technology 1 , Gaithersburg, Maryland 20899, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Standards and Technology 1 , Gaithersburg, Maryland 20899, USA","institution_ids":["https://openalex.org/I1321296531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063737379","display_name":"William H. Huber","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]},{"id":"https://openalex.org/I4210105847","display_name":"NTT Basic Research Laboratories","ror":"https://ror.org/01m2pas06","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210105847"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"William H. Huber","raw_affiliation_strings":["NTT Basic Research Laboratories 2 , NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Basic Research Laboratories 2 , NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan","institution_ids":["https://openalex.org/I2251713219","https://openalex.org/I4210105847"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033482280","display_name":"Brian J. Simonds","orcid":"https://orcid.org/0000-0002-9758-0704","observed_orcids":["https://orcid.org/0000-0002-9758-0704"]},"institutions":[{"id":"https://openalex.org/I1321296531","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416","country_code":"US","type":"government","lineage":["https://openalex.org/I1321296531","https://openalex.org/I1343035065"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Brian Simonds","raw_affiliation_strings":["National Institute of Standards and Technology 1 , Gaithersburg, Maryland 20899, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Standards and Technology 1 , Gaithersburg, Maryland 20899, USA","institution_ids":["https://openalex.org/I1321296531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023213632","display_name":"Emmanouel Hourdakis","orcid":"https://orcid.org/0000-0002-1009-6689","observed_orcids":["https://orcid.org/0000-0002-1009-6689"]},"institutions":[{"id":"https://openalex.org/I1321296531","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416","country_code":"US","type":"government","lineage":["https://openalex.org/I1321296531","https://openalex.org/I1343035065"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Emmanouel Hourdakis","raw_affiliation_strings":["National Institute of Standards and Technology 1 , Gaithersburg, Maryland 20899, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Standards and Technology 1 , Gaithersburg, Maryland 20899, USA","institution_ids":["https://openalex.org/I1321296531"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075094436","display_name":"Akira Fujiwara","orcid":"https://orcid.org/0000-0001-9173-8614","observed_orcids":["https://orcid.org/0000-0001-9173-8614"]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]},{"id":"https://openalex.org/I4210105847","display_name":"NTT Basic Research Laboratories","ror":"https://ror.org/01m2pas06","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210105847"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Akira Fujiwara","raw_affiliation_strings":["NTT Basic Research Laboratories 2 , NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Basic Research Laboratories 2 , NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan","institution_ids":["https://openalex.org/I2251713219","https://openalex.org/I4210105847"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113521882","display_name":"Yukinori Ono","orcid":"https://orcid.org/0009-0006-7523-8197","observed_orcids":["https://orcid.org/0009-0006-7523-8197"]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]},{"id":"https://openalex.org/I4210105847","display_name":"NTT Basic Research Laboratories","ror":"https://ror.org/01m2pas06","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210105847"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yukinori Ono","raw_affiliation_strings":["NTT Basic Research Laboratories 2 , NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Basic Research Laboratories 2 , NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan","institution_ids":["https://openalex.org/I2251713219","https://openalex.org/I4210105847"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101398452","display_name":"Yasuo Takahashi","orcid":"https://orcid.org/0000-0002-1603-0058","observed_orcids":["https://orcid.org/0000-0002-1603-0058"]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]},{"id":"https://openalex.org/I4210105847","display_name":"NTT Basic Research Laboratories","ror":"https://ror.org/01m2pas06","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210105847"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yasuo Takahashi","raw_affiliation_strings":["NTT Basic Research Laboratories 2 , NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Basic Research Laboratories 2 , NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan","institution_ids":["https://openalex.org/I2251713219","https://openalex.org/I4210105847"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025960288","display_name":"Hiroshi Inokawa","orcid":"https://orcid.org/0000-0002-8647-3524","observed_orcids":["https://orcid.org/0000-0002-8647-3524"]},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]},{"id":"https://openalex.org/I4210105847","display_name":"NTT Basic Research Laboratories","ror":"https://ror.org/01m2pas06","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210105847"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroshi Inokawa","raw_affiliation_strings":["NTT Basic Research Laboratories 2 , NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NTT Basic Research Laboratories 2 , NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan","institution_ids":["https://openalex.org/I2251713219","https://openalex.org/I4210105847"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Miha Furlan","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]},{"id":"https://openalex.org/I4210103407","display_name":"Swiss Federal Institute of Metrology","ror":"https://ror.org/0115xv923","country_code":"CH","type":"government","lineage":["https://openalex.org/I4210103407"]},{"id":"https://openalex.org/I4405253320","display_name":"Laboratory for Solid State Physics","ror":"https://ror.org/00hwfrn96","country_code":"CH","type":"facility","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088","https://openalex.org/I4405253320"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Miha Furlan","raw_affiliation_strings":["Solid State Physics Laboratory 3 , ETH Zurich, CH-8093 Zurich, Switzerland, Swiss Federal Office of Metrology and Accreditation METAS, CH-3003 Bern-Wabern, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Solid State Physics Laboratory 3 , ETH Zurich, CH-8093 Zurich, Switzerland, Swiss Federal Office of Metrology and Accreditation METAS, CH-3003 Bern-Wabern, Switzerland","institution_ids":["https://openalex.org/I35440088","https://openalex.org/I4210103407","https://openalex.org/I4405253320"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5058405194","display_name":"Mark W. Keller","orcid":"https://orcid.org/0000-0001-8573-2953","observed_orcids":["https://orcid.org/0000-0001-8573-2953"]},"institutions":[{"id":"https://openalex.org/I1321296531","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416","country_code":"US","type":"government","lineage":["https://openalex.org/I1321296531","https://openalex.org/I1343035065"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mark W. Keller","raw_affiliation_strings":["National Institute of Standards and Technology 4 , Boulder, Colorado 80303, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute of Standards and Technology 4 , Boulder, Colorado 80303, USA","institution_ids":["https://openalex.org/I1321296531"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":6,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":1.5271,"has_fulltext":false,"cited_by_count":49,"citation_normalized_percentile":{"value":0.81038816,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":99},"biblio":{"volume":"104","issue":"3","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.7300000190734863,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.7300000190734863,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.10790000110864639,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.04399999976158142,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/single-electron-transistor","display_name":"single-electron transistor","score":0.9700000286102295},{"id":"https://openalex.org/keywords/two-level-fluctuators","display_name":"two-level fluctuators","score":0.9670000076293945},{"id":"https://openalex.org/keywords/silicon-devices","display_name":"silicon devices","score":0.5400000214576721},{"id":"https://openalex.org/keywords/charge-noise","display_name":"charge noise","score":0.949999988079071},{"id":"https://openalex.org/keywords/defect-stability","display_name":"defect stability","score":0.6449999809265137},{"id":"https://openalex.org/keywords/long-term-device-stability","display_name":"long-term device stability","score":0.6060000061988831}],"concepts":[{"id":"https://openalex.org/C175291020","wikidata":"https://www.wikidata.org/wiki/Q1156822","display_name":"Offset (computer science)","level":2,"score":0.8065968751907349},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.7343713045120239},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5994862914085388},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5977801084518433},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.5082935690879822},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5043867826461792},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.5021913051605225},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.4483562111854553},{"id":"https://openalex.org/C74859849","wikidata":"https://www.wikidata.org/wiki/Q2466686","display_name":"Non-equilibrium thermodynamics","level":2,"score":0.4423443078994751},{"id":"https://openalex.org/C207821765","wikidata":"https://www.wikidata.org/wiki/Q405372","display_name":"Instability","level":2,"score":0.43849918246269226},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.4129635691642761},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.21620413661003113},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.1333926022052765},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1315644383430481},{"id":"https://openalex.org/C57879066","wikidata":"https://www.wikidata.org/wiki/Q41217","display_name":"Mechanics","level":1,"score":0.07124453783035278},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.2949700","doi":"https://doi.org/10.1063/1.2949700","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.2949700","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320332178","display_name":"National Institute of Standards and Technology","ror":"https://ror.org/05xpvk416"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":24,"referenced_works":["https://openalex.org/W1582376057","https://openalex.org/W1967536905","https://openalex.org/W1972942004","https://openalex.org/W1993036859","https://openalex.org/W1995054690","https://openalex.org/W1995668077","https://openalex.org/W1997460603","https://openalex.org/W2014426329","https://openalex.org/W2017429608","https://openalex.org/W2017677047","https://openalex.org/W2024399322","https://openalex.org/W2030263170","https://openalex.org/W2034059915","https://openalex.org/W2035374584","https://openalex.org/W2064292078","https://openalex.org/W2069579767","https://openalex.org/W2070571631","https://openalex.org/W2072186095","https://openalex.org/W2083243992","https://openalex.org/W2092387582","https://openalex.org/W2102986313","https://openalex.org/W2493151527","https://openalex.org/W2506356478","https://openalex.org/W3092914166"],"related_works":["https://openalex.org/W2083243992","https://openalex.org/W1960214842","https://openalex.org/W2064292078","https://openalex.org/W256208234","https://openalex.org/W2030263170","https://openalex.org/W3098242089","https://openalex.org/W2814006963","https://openalex.org/W2467528802","https://openalex.org/W2105866227","https://openalex.org/W3093880615"],"abstract_inverted_index":{"A":[0,53],"common":[1],"observation":[2,146],"in":[3,31,49,90,99,125,151,159,186,193,215,218],"metal-based":[4,51,92,195],"(specifically,":[5],"those":[6],"with":[7,162,221],"AlOx":[8],"tunnel":[9],"junctions)":[10],"single-electron":[11],"tunneling":[12],"(SET)":[13],"devices":[14,93,102,174,196],"is":[15,28,36],"a":[16,126,136,156],"time-dependent":[17],"instability":[18],"known":[19],"as":[20],"the":[21,39,47,50,70,83,91,100,103,115,139,145,172,180,188,194,201,213],"long-term":[22],"charge":[23,104,122,140,164,202,229],"offset":[24,105,141,165,203,230],"drift.":[25,204],"This":[26],"drift":[27,48,142,166],"not":[29,76,95,176],"seen":[30],"Si-based":[32,101],"devices.":[33,52],"Our":[34],"aim":[35],"to":[37,45,81,200,228],"understand":[38],"difference":[40],"between":[41],"these,":[42],"and":[43,85,114,154,178,184,217],"ultimately":[44],"overcome":[46],"comprehensive":[54],"set":[55],"of":[56,66,132,147],"measurements":[57,62,124],"shows":[58],"that":[59,225],"(1)":[60],"brief":[61],"over":[63,111,129],"short":[64],"periods":[65],"time":[67],"can":[68],"mask":[69],"underlying":[71],"drift,":[72,84],"(2)":[73],"we":[74],"have":[75],"found":[77],"any":[78],"reproducible":[79],"technique":[80],"eliminate":[82],"(3)":[86],"two-level":[87],"fluctuators":[88],"(TLFs)":[89],"are":[94,117,175,182,197],"stable.":[96,118],"In":[97],"contrast,":[98,187],"drifts":[106],"by":[107,207],"less":[108],"than":[109],"0.01e":[110],"many":[112],"days,":[113],"TLFs":[116],"We":[119,134,168,205],"also":[120],"show":[121],"noise":[123],"SET":[127],"device":[128],"four":[130],"decades":[131],"temperature.":[133],"present":[135],"model":[137],"for":[138,212],"based":[143],"on":[144],"nonequilibrium":[148],"heat":[149],"evolution":[150],"glassy":[152],"materials,":[153],"obtain":[155],"numerical":[157],"estimate":[158],"good":[160],"agreement":[161],"our":[163],"observations.":[167],"conclude":[169],"that,":[170],"while":[171],"Si":[173],"perfect":[177],"defect-free,":[179],"defects":[181,192],"stable":[183],"noninteracting;":[185],"interacting,":[189],"unstable":[190],"glasslike":[191],"what":[198],"lead":[199,227],"end":[206],"suggesting":[208],"some":[209],"particular":[210],"directions":[211],"improvement":[214],"fabrication,":[216],"particular,":[219],"fabrication":[220],"crystalline":[222],"metal-oxide":[223],"barriers,":[224],"may":[226],"drift-free":[231],"behavior.":[232]},"counts_by_year":[{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":4},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":3},{"year":2016,"cited_by_count":4},{"year":2015,"cited_by_count":4},{"year":2014,"cited_by_count":8},{"year":2012,"cited_by_count":5}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}