{"id":"https://openalex.org/W2005503016","doi":"https://doi.org/10.1117/12.382094","title":"AlGaInN-based laser diodes","display_name":"AlGaInN-based laser diodes","publication_year":2000,"publication_date":"2000-04-18","ids":{"openalex":"https://openalex.org/W2005503016","doi":"https://doi.org/10.1117/12.382094","mag":"2005503016"},"language":"en","primary_location":{"id":"doi:10.1117/12.382094","doi":"https://doi.org/10.1117/12.382094","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.382094","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5052267962","display_name":"Shiro Uchida","orcid":"https://orcid.org/0000-0001-7555-9114","observed_orcids":["https://orcid.org/0000-0001-7555-9114","https://orcid.org/0000-0002-7086-896X"]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shiro Uchida","raw_affiliation_strings":["Sony Shiroishi Semiconductor Inc. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Shiroishi Semiconductor Inc. (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019750858","display_name":"Satoru Kijima","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Satoru Kijima","raw_affiliation_strings":["Sony Shiroishi Semiconductor Inc. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Shiroishi Semiconductor Inc. (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112613078","display_name":"Tsuyoshi Tojyo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tsuyoshi Tojyo","raw_affiliation_strings":["Sony Shiroishi Semiconductor Inc. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Shiroishi Semiconductor Inc. (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074080714","display_name":"Shinichi Ansai","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shinichi Ansai","raw_affiliation_strings":["Sony Shiroishi Semiconductor Inc. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Shiroishi Semiconductor Inc. (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031439788","display_name":"Motonubu Takeya","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Motonubu Takeya","raw_affiliation_strings":["Sony Shiroishi Semiconductor Inc. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Shiroishi Semiconductor Inc. (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109279756","display_name":"Tomonori Hino","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tomonori Hino","raw_affiliation_strings":["Sony Shiroishi Semiconductor Inc. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Shiroishi Semiconductor Inc. (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064737037","display_name":"Katsuyoshi Shibuya","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Katsuyoshi Shibuya","raw_affiliation_strings":["Sony Shiroishi Semiconductor Inc. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Shiroishi Semiconductor Inc. (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055468064","display_name":"Shinroh Ikeda","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shinroh Ikeda","raw_affiliation_strings":["Sony Shiroishi Semiconductor Inc. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Shiroishi Semiconductor Inc. (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Takeharu Asano","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takeharu Asano","raw_affiliation_strings":["Sony Shiroishi Semiconductor Inc. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Shiroishi Semiconductor Inc. (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000678087","display_name":"Katsunori Yanashima","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Katsunori Yanashima","raw_affiliation_strings":["Sony Shiroishi Semiconductor Inc. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Shiroishi Semiconductor Inc. (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Shigeki Hashimoto","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shigeki Hashimoto","raw_affiliation_strings":["Sony Corp. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Corp. (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048651423","display_name":"Tsunenori Asatsuma","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tsunenori Asatsuma","raw_affiliation_strings":["Sony Corp. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Corp. (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065569108","display_name":"Masafumi Ozawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masafumi Ozawa","raw_affiliation_strings":["Sony Corp. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Corp. (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111783695","display_name":"Toshimasa Kobayashi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Toshimasa Kobayashi","raw_affiliation_strings":["Sony Corp. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Corp. (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037765237","display_name":"Yoshifumi Yabuki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yoshifumi Yabuki","raw_affiliation_strings":["Sony Shiroishi Semiconductor, Inc. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Shiroishi Semiconductor, Inc. (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075015395","display_name":"Tsuneyoshi Aoki","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tsuneyoshi Aoki","raw_affiliation_strings":["Sony Shiroishi Semiconductor, Inc. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Shiroishi Semiconductor, Inc. (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111662812","display_name":"Masao Ikeda","orcid":"https://orcid.org/0009-0009-8990-2708","observed_orcids":["https://orcid.org/0009-0009-8990-2708"]},"institutions":[{"id":"https://openalex.org/I4210143797","display_name":"Sony (Japan)","ror":"https://ror.org/04wzv3n59","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210143797"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masao Ikeda","raw_affiliation_strings":["Sony Shiroishi Semiconductor, Inc. (Japan)"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sony Shiroishi Semiconductor, Inc. (Japan)","institution_ids":["https://openalex.org/I4210143797"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210143797"],"apc_list":null,"apc_paid":null,"fwci":44.2723,"has_fulltext":false,"cited_by_count":13,"citation_normalized_percentile":{"value":1.0,"is_in_top_1_percent":true,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":93,"max":95},"biblio":{"volume":"3947","issue":null,"first_page":"156","last_page":"156"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/violet-laser","display_name":"violet laser","score":0.9359999895095825},{"id":"https://openalex.org/keywords/device-lifetime","display_name":"device lifetime","score":0.6259999871253967},{"id":"https://openalex.org/keywords/dislocation-density","display_name":"dislocation density","score":0.9359999895095825},{"id":"https://openalex.org/keywords/algan-gan-superlattice","display_name":"AlGaN/GaN superlattice","score":0.9739999771118164},{"id":"https://openalex.org/keywords/p-type-cladding-layer","display_name":"p-type cladding layer","score":0.9729999899864197},{"id":"https://openalex.org/keywords/threshold-current","display_name":"threshold current","score":0.6990000009536743},{"id":"https://openalex.org/keywords/room-temperature-operation","display_name":"room-temperature operation","score":0.574999988079071}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8139352798461914},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7199375629425049},{"id":"https://openalex.org/C105382558","wikidata":"https://www.wikidata.org/wiki/Q332431","display_name":"Superlattice","level":2,"score":0.6383394002914429},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.634086012840271},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6236334443092346},{"id":"https://openalex.org/C36456112","wikidata":"https://www.wikidata.org/wiki/Q288064","display_name":"Cladding (metalworking)","level":2,"score":0.6090010404586792},{"id":"https://openalex.org/C159122135","wikidata":"https://www.wikidata.org/wiki/Q737571","display_name":"Dislocation","level":2,"score":0.5364136695861816},{"id":"https://openalex.org/C121477167","wikidata":"https://www.wikidata.org/wiki/Q17154002","display_name":"Semiconductor laser theory","level":3,"score":0.49809813499450684},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.4428303837776184},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.4357061982154846},{"id":"https://openalex.org/C88815150","wikidata":"https://www.wikidata.org/wiki/Q1050156","display_name":"Blue laser","level":3,"score":0.4109705090522766},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.3382049798965454},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.2837457060813904},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08202952146530151},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.06901741027832031},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1117/12.382094","doi":"https://doi.org/10.1117/12.382094","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.382094","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2087038076","https://openalex.org/W2060037047","https://openalex.org/W1980552739","https://openalex.org/W2313643830","https://openalex.org/W2047482018","https://openalex.org/W2059783326","https://openalex.org/W2094553131","https://openalex.org/W2088407791","https://openalex.org/W2045579871","https://openalex.org/W2067763906"],"abstract_inverted_index":{"The":[0,53,93,114],"longer":[1],"lifetime":[2,15,115],"is":[3,16,116],"desired":[4],"for":[5],"high":[6,103],"power":[7,25,101,127],"AlGaInN":[8],"based":[9],"violet":[10],"lasers.":[11],"We":[12,79],"found":[13],"that":[14],"strongly":[17],"dependent":[18],"on":[19],"both":[20],"the":[21,27,31,50,61,65,72,81],"initial":[22],"operating":[23,51],"consumption":[24],"and":[26,38,64],"dislocation":[28,88],"densities":[29],"in":[30],"laser":[32],"stripe.":[33],"Pd/Pt/Au":[34],"as":[35,41,58,60,102,104],"a":[36,42,125],"metal":[37],"AlGaN/GaN":[39],"superlattice":[40],"p-type":[43],"cladding":[44],"layer":[45],"were":[46],"incorporated":[47],"to":[48,71,85],"reduce":[49],"voltage.":[52],"optimization":[54],"of":[55,76,128],"device":[56,68],"parameters":[57],"well":[59],"stripe":[62],"width":[63],"RIE":[66],"etching":[67],"depth":[69],"led":[70],"lower":[73,87],"threshold":[74],"current":[75],"3.4":[77],"kA/cm2.":[78],"used":[80],"Pendeo":[82],"epitaxy":[83],"technique":[84],"get":[86],"density":[89],"approximately":[90],"107":[91],"cm-2.":[92],"LDs":[94],"with":[95,124],"these":[96],"technologies":[97],"showed":[98],"an":[99],"output":[100],"35":[105],"mW":[106,130],"under":[107,121],"room":[108],"temperature":[109],"CW":[110,122],"condition":[111],"without":[112],"kink.":[113],"more":[117],"than":[118],"500":[119],"hours":[120],"operation":[123],"constant":[126],"20":[129],"at":[131],"25":[132],"degree(s)C.":[133]},"counts_by_year":[{"year":2013,"cited_by_count":2}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}