{"id":"https://openalex.org/W2005494718","doi":"https://doi.org/10.1143/jjap.30.l941","title":"Crystallization of Amorphous Silicon with Clean Surfaces","display_name":"Crystallization of Amorphous Silicon with Clean Surfaces","publication_year":1991,"publication_date":"1991-06-01","ids":{"openalex":"https://openalex.org/W2005494718","doi":"https://doi.org/10.1143/jjap.30.l941","mag":"2005494718"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.30.l941","doi":"https://doi.org/10.1143/jjap.30.l941","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.30.l941","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.30.L941/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1143/JJAP.30.L941/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103275942","display_name":"Akira Sakai","orcid":"https://orcid.org/0000-0002-0654-504X","observed_orcids":["https://orcid.org/0000-0002-0654-504X"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Akira Sakai","raw_affiliation_strings":["Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111591397","display_name":"Haruhiko Ono","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Haruhiko Ono","raw_affiliation_strings":["Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102094179","display_name":"Koichi Ishida","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Koichi Ishida","raw_affiliation_strings":["Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083933528","display_name":"Taeko Niino","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Taeko Niino","raw_affiliation_strings":["Microelectronics Research Laboratories, NEC Corporation, 4-1-1, Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 213"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Research Laboratories, NEC Corporation, 4-1-1, Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 213","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110181401","display_name":"Toru Tatsumi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Toru Tatsumi","raw_affiliation_strings":["Microelectronics Research Laboratories, NEC Corporation, 4-1-1, Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 213"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Microelectronics Research Laboratories, NEC Corporation, 4-1-1, Miyazaki, Miyamae-ku, Kawasaki, Kanagawa 213","institution_ids":["https://openalex.org/I118347220"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I118347220"],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":4.929,"has_fulltext":true,"cited_by_count":38,"citation_normalized_percentile":{"value":0.95063788,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"30","issue":"6A","first_page":"L941","last_page":"L941"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.32199999690055847,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.32199999690055847,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.2842000126838684,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.18490000069141388,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amorphous-silicon-crystallization","display_name":"amorphous silicon crystallization","score":0.9070000052452087},{"id":"https://openalex.org/keywords/sio2-layer","display_name":"SiO2 layer","score":0.48899999260902405},{"id":"https://openalex.org/keywords/ultra-high-vacuum","display_name":"ultrahigh vacuum","score":0.7919999957084656},{"id":"https://openalex.org/keywords/grain-growth","display_name":"grain growth","score":0.9150000214576721},{"id":"https://openalex.org/keywords/crystallization-mechanism","display_name":"crystallization mechanism","score":0.8199999928474426},{"id":"https://openalex.org/keywords/thin-film-deposition","display_name":"thin film deposition","score":0.4059999883174896}],"concepts":[{"id":"https://openalex.org/C203036418","wikidata":"https://www.wikidata.org/wiki/Q284256","display_name":"Crystallization","level":2,"score":0.879055380821228},{"id":"https://openalex.org/C61048295","wikidata":"https://www.wikidata.org/wiki/Q909022","display_name":"Nucleation","level":2,"score":0.780231237411499},{"id":"https://openalex.org/C146088050","wikidata":"https://www.wikidata.org/wiki/Q744818","display_name":"Transmission electron microscopy","level":2,"score":0.7016394138336182},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6844473481178284},{"id":"https://openalex.org/C77557913","wikidata":"https://www.wikidata.org/wiki/Q864822","display_name":"Electron diffraction","level":3,"score":0.6343515515327454},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.6067662835121155},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.5967078804969788},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5045393705368042},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.46820002794265747},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.45309075713157654},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.4183698892593384},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.3684942424297333},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.2761232852935791},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.23304638266563416},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.20281252264976501},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.15599939227104187},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.13710877299308777},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.12771952152252197},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/jjap.30.l941","doi":"https://doi.org/10.1143/jjap.30.l941","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.30.l941","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.30.L941/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1143/jjap.30.l941","doi":"https://doi.org/10.1143/jjap.30.l941","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.30.l941","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.30.L941/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2005494718.pdf","grobid_xml":"https://content.openalex.org/works/W2005494718.grobid-xml"},"referenced_works_count":14,"referenced_works":["https://openalex.org/W1986301779","https://openalex.org/W1991895970","https://openalex.org/W1997066788","https://openalex.org/W2001921679","https://openalex.org/W2004765737","https://openalex.org/W2007127043","https://openalex.org/W2007729243","https://openalex.org/W2012557762","https://openalex.org/W2027603232","https://openalex.org/W2034387811","https://openalex.org/W2058815746","https://openalex.org/W2072191441","https://openalex.org/W2076136028","https://openalex.org/W2083967379"],"related_works":["https://openalex.org/W2975496570","https://openalex.org/W2066920323","https://openalex.org/W2007672562","https://openalex.org/W2016242018","https://openalex.org/W2102059217","https://openalex.org/W2080916286","https://openalex.org/W2054188502","https://openalex.org/W1992134790","https://openalex.org/W3036384735","https://openalex.org/W2027856187"],"abstract_inverted_index":{"Crystallization":[0],"of":[1,66,92,99,109],"amorphous":[2],"Si":[3,101],"(a-Si)":[4],"on":[5,31],"SiO2":[6,26,33],"layers":[7],"in":[8,45,70,81,96],"ultra-high":[9],"vacuum":[10],"(UHV)":[11],"was":[12,112],"examined":[13],"by":[14],"transmission":[15],"electron":[16,23],"microscopy":[17],"(TEM)":[18],"and":[19,35,58],"reflection":[20],"high":[21],"energy":[22],"diffraction.":[24],"The":[25,107],"growth,":[27],"the":[28,32,36,39,55,59,64,67,73,76,82,97,104,110],"a-Si":[29,68,105],"deposition":[30],"layer,":[34,69],"annealing":[37],"for":[38],"crystallization":[40,93,111],"were":[41],"successively":[42],"carried":[43],"out":[44],"a":[46,89],"UHV":[47],"molecular-beam-epitaxy":[48],"chamber.":[49],"It":[50],"has":[51],"been":[52],"found":[53],"that":[54],"initial":[56],"nucleation":[57,74],"grain":[60],"growth":[61],"occur":[62],"at":[63,75,103],"surface":[65],"contrast":[71],"with":[72],"a-Si/SiO2":[77],"interface":[78],"ordinarily":[79],"observed":[80],"previous":[83],"studies.":[84],"Cross-sectional":[85],"TEM":[86],"observations":[87],"revealed":[88],"novel":[90],"mode":[91],"which":[94],"resulted":[95],"formation":[98],"mushroom-shaped":[100],"grains":[102],"surface.":[106],"mechanism":[108],"also":[113],"discussed.":[114]},"counts_by_year":[{"year":2015,"cited_by_count":1}],"updated_date":"2026-10-01T08:54:57.152042","created_date":"2016-06-24T00:00:00"}