{"id":"https://openalex.org/W2005487687","doi":"https://doi.org/10.1063/1.1328787","title":"Designing two-dimensional electron gases in GaAs/InGaAs/AlGaAs, \u03b4-doped AlGaAs/GaAs, and AlGaAs/InGaAs/GaAs heterostructures for single electron transistor application","display_name":"Designing two-dimensional electron gases in GaAs/InGaAs/AlGaAs, \u03b4-doped AlGaAs/GaAs, and AlGaAs/InGaAs/GaAs heterostructures for single electron transistor application","publication_year":2001,"publication_date":"2001-02-01","ids":{"openalex":"https://openalex.org/W2005487687","doi":"https://doi.org/10.1063/1.1328787","mag":"2005487687"},"language":"en","primary_location":{"id":"doi:10.1063/1.1328787","doi":"https://doi.org/10.1063/1.1328787","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1328787","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103131754","display_name":"Yulan Fu","orcid":"https://orcid.org/0000-0003-3362-2474","observed_orcids":["https://orcid.org/0000-0003-3362-2474"]},"institutions":[{"id":"https://openalex.org/I66862912","display_name":"Chalmers University of Technology","ror":"https://ror.org/040wg7k59","country_code":"SE","type":"education","lineage":["https://openalex.org/I66862912"]},{"id":"https://openalex.org/I881427289","display_name":"University of Gothenburg","ror":"https://ror.org/01tm6cn81","country_code":"SE","type":"education","lineage":["https://openalex.org/I881427289"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"Y. Fu","raw_affiliation_strings":["Physical Electronics and Photonics, Microtechnology Center at Chalmers, Department of Physics, Fysikgr\u00e4nd 3, University of G\u00f6teborg and Chalmers University of Technology, S-412 96 G\u00f6teborg, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Physical Electronics and Photonics, Microtechnology Center at Chalmers, Department of Physics, Fysikgr\u00e4nd 3, University of G\u00f6teborg and Chalmers University of Technology, S-412 96 G\u00f6teborg, Sweden","institution_ids":["https://openalex.org/I66862912","https://openalex.org/I881427289"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040056999","display_name":"T. H. Wang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210159876","display_name":"Institute of Physics","ror":"https://ror.org/05cvf7v30","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"T. H. Wang","raw_affiliation_strings":["Institute of Physics, Chinese Academy of Science, No.8, South 3rd Street, Zhongguancun, Beijing 100080 People\u2019s Republic of China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Physics, Chinese Academy of Science, No.8, South 3rd Street, Zhongguancun, Beijing 100080 People\u2019s Republic of China","institution_ids":["https://openalex.org/I19820366","https://openalex.org/I4210159876"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5074258399","display_name":"M. Willander","orcid":"https://orcid.org/0000-0001-6235-7038","observed_orcids":["https://orcid.org/0000-0001-6235-7038"]},"institutions":[{"id":"https://openalex.org/I66862912","display_name":"Chalmers University of Technology","ror":"https://ror.org/040wg7k59","country_code":"SE","type":"education","lineage":["https://openalex.org/I66862912"]},{"id":"https://openalex.org/I881427289","display_name":"University of Gothenburg","ror":"https://ror.org/01tm6cn81","country_code":"SE","type":"education","lineage":["https://openalex.org/I881427289"]}],"countries":["SE"],"is_corresponding":false,"raw_author_name":"M. Willander","raw_affiliation_strings":["Physical Electronics and Photonics, Microtechnology Center at Chalmers, Department of Physics, Fysikgr\u00e4nd 3, University of G\u00f6teborg and Chalmers University of Technology, S-412 96 G\u00f6teborg, Sweden"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Physical Electronics and Photonics, Microtechnology Center at Chalmers, Department of Physics, Fysikgr\u00e4nd 3, University of G\u00f6teborg and Chalmers University of Technology, S-412 96 G\u00f6teborg, Sweden","institution_ids":["https://openalex.org/I66862912","https://openalex.org/I881427289"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":0.9416,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.72758638,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"89","issue":"3","first_page":"1759","last_page":"1763"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.6699000000953674,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10382","display_name":"Quantum and electron transport phenomena","score":0.6699000000953674,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.30079999566078186,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.023499999195337296,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/two-dimensional-electron-gas","display_name":"two-dimensional electron gas","score":0.9769999980926514},{"id":"https://openalex.org/keywords/single-electron-transistor","display_name":"single-electron transistor","score":0.7820000052452087},{"id":"https://openalex.org/keywords/algaas-ingaas-gaas-heterostructure","display_name":"AlGaAs/InGaAs/GaAs heterostructure","score":0.9779999852180481},{"id":"https://openalex.org/keywords/sheet-charge-density","display_name":"sheet density","score":0.5649999976158142},{"id":"https://openalex.org/keywords/charge-carrier-mobility","display_name":"carrier mobility","score":0.972000002861023},{"id":"https://openalex.org/keywords/ionized-impurity-scattering","display_name":"ionized impurity scattering","score":0.9980000257492065},{"id":"https://openalex.org/keywords/schrodinger-poisson-self-consistency","display_name":"Schr\u00f6dinger-Poisson self-consistency","score":0.8429999947547913}],"concepts":[{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.8162977695465088},{"id":"https://openalex.org/C85867844","wikidata":"https://www.wikidata.org/wiki/Q1072904","display_name":"Fermi gas","level":3,"score":0.6644588708877563},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.5826851725578308},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.563649594783783},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.5559428930282593},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5534140467643738},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5057897567749023},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.48984524607658386},{"id":"https://openalex.org/C132882038","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"Induced high electron mobility transistor","level":5,"score":0.4581299424171448},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4417842626571655},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.4372893273830414},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4282866418361664},{"id":"https://openalex.org/C191486275","wikidata":"https://www.wikidata.org/wiki/Q210028","display_name":"Scattering","level":2,"score":0.4271446764469147},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.14332789182662964},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.09484255313873291},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.056470632553100586},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.1328787","doi":"https://doi.org/10.1063/1.1328787","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1328787","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W296245259","https://openalex.org/W648141296","https://openalex.org/W1972189186","https://openalex.org/W1984429399","https://openalex.org/W1991066419","https://openalex.org/W2018121995","https://openalex.org/W2019555515","https://openalex.org/W2045521849","https://openalex.org/W2073677293","https://openalex.org/W2094386779"],"related_works":["https://openalex.org/W1661861157","https://openalex.org/W2032677106","https://openalex.org/W2566498281","https://openalex.org/W1984777384","https://openalex.org/W3039830479","https://openalex.org/W1981200640","https://openalex.org/W2026526957","https://openalex.org/W2019555515","https://openalex.org/W2136023394","https://openalex.org/W1641409604"],"abstract_inverted_index":{"We":[0],"have":[1],"theoretically":[2],"studied":[3],"two":[4],"types":[5],"of":[6,32,62,83],"two-dimensional":[7],"electron":[8],"gases":[9],"(2DEGs)":[10],"in":[11,37],"GaAs/InGaAs/AlGaAs":[12],"and":[13,25,65,73,90],"\u03b4-doped-AlGaAs/GaAs":[14],"heterostructures":[15,75],"for":[16],"single-electron":[17],"transistor":[18],"applications":[19],"by":[20],"self-consistently":[21],"solving":[22],"the":[23,29,33,39,53,59,63,66,84],"Schr\u00f6dinger":[24],"Poisson":[26],"equations.":[27],"Assuming":[28],"dominant":[30],"effect":[31],"ionized":[34],"impurity":[35],"scattering":[36],"determining":[38],"low-field":[40],"carrier":[41,68,91],"mobility,":[42],"it":[43],"has":[44],"been":[45],"shown":[46],"that":[47],"introducing":[48],"an":[49,79],"InGaAs":[50],"layer":[51],"to":[52],"conventional":[54],"GaAs/AlGaAs":[55],"heterostructure":[56],"greatly":[57],"increases":[58],"sheet":[60,88],"density":[61,89],"2DEG":[64,85],"corresponding":[67],"mobility.":[69,92],"The":[70],"\u03b4-doped":[71],"AlGaAs/GaAs":[72],"AlGaAs/InGaAs/GaAs":[74],"provide":[76],"us":[77],"with":[78,86],"even":[80],"better":[81],"control":[82],"higher":[87]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}