{"id":"https://openalex.org/W2005462741","doi":"https://doi.org/10.1143/jjap.43.8030","title":"Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes","display_name":"Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes","publication_year":2004,"publication_date":"2004-12-09","ids":{"openalex":"https://openalex.org/W2005462741","doi":"https://doi.org/10.1143/jjap.43.8030","mag":"2005462741"},"language":"en","primary_location":{"id":"doi:10.1143/jjap.43.8030","doi":"https://doi.org/10.1143/jjap.43.8030","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.43.8030","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.43.8030/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://iopscience.iop.org/article/10.1143/JJAP.43.8030/pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113848006","display_name":"Katsushi Akita","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Katsushi Akita","raw_affiliation_strings":["Sumitomo Electric Industries, Ltd., Semiconductor R & D Laboratories, 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sumitomo Electric Industries, Ltd., Semiconductor R & D Laboratories, 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan","institution_ids":["https://openalex.org/I4210166210"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Takao Nakamura","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takao Nakamura","raw_affiliation_strings":["Sumitomo Electric Industries, Ltd., Semiconductor R & D Laboratories, 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Sumitomo Electric Industries, Ltd., Semiconductor R & D Laboratories, 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan","institution_ids":["https://openalex.org/I4210166210"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5109851670","display_name":"Hideki Hirayama","orcid":"https://orcid.org/0000-0003-1253-6278","observed_orcids":["https://orcid.org/0000-0003-1253-6278"]},"institutions":[{"id":"https://openalex.org/I4210110652","display_name":"RIKEN","ror":"https://ror.org/01sjwvz98","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210110652"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hideki Hirayama","raw_affiliation_strings":["RIKEN (The Institute of Physical and Chemical Research), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"RIKEN (The Institute of Physical and Chemical Research), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan","institution_ids":["https://openalex.org/I4210110652"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":2210,"currency":"USD","value_usd":2210},"apc_paid":null,"fwci":1.2349,"has_fulltext":true,"cited_by_count":15,"citation_normalized_percentile":{"value":0.77933594,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":95},"biblio":{"volume":"43","issue":"12","first_page":"8030","last_page":"8031"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12309","display_name":"solar cell performance optimization","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/inalgan","display_name":"InAlGaN","score":0.847000002861023},{"id":"https://openalex.org/keywords/uv-led","display_name":"ultraviolet light-emitting diodes","score":0.9100000262260437},{"id":"https://openalex.org/keywords/gan-substrates","display_name":"GaN substrates","score":0.9750000238418579},{"id":"https://openalex.org/keywords/gan-templates","display_name":"GaN templates","score":0.7639999985694885},{"id":"https://openalex.org/keywords/sapphire-substrate","display_name":"sapphire substrate","score":0.8299999833106995},{"id":"https://openalex.org/keywords/dislocation-density","display_name":"dislocation density","score":0.9829999804496765},{"id":"https://openalex.org/keywords/power-output","display_name":"output power","score":0.9279999732971191},{"id":"https://openalex.org/keywords/current-saturation","display_name":"current saturation","score":0.6830000281333923},{"id":"https://openalex.org/keywords/cathodoluminescence","display_name":"cathodoluminescence","score":0.8600000143051147},{"id":"https://openalex.org/keywords/quaternary-alloys","display_name":"quaternary alloys","score":0.699999988079071}],"concepts":[{"id":"https://openalex.org/C176666156","wikidata":"https://www.wikidata.org/wiki/Q25504","display_name":"Light-emitting diode","level":2,"score":0.9073723554611206},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7897948622703552},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7716639041900635},{"id":"https://openalex.org/C2776798109","wikidata":"https://www.wikidata.org/wiki/Q11391","display_name":"Ultraviolet","level":2,"score":0.7375441193580627},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6269170045852661},{"id":"https://openalex.org/C2780064504","wikidata":"https://www.wikidata.org/wiki/Q127583","display_name":"Sapphire","level":3,"score":0.5908840894699097},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.4816909730434418},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.28018707036972046},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.20927393436431885},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1143/jjap.43.8030","doi":"https://doi.org/10.1143/jjap.43.8030","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.43.8030","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.43.8030/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1143/jjap.43.8030","doi":"https://doi.org/10.1143/jjap.43.8030","is_oa":true,"landing_page_url":"https://doi.org/10.1143/jjap.43.8030","pdf_url":"https://iopscience.iop.org/article/10.1143/JJAP.43.8030/pdf","source":{"id":"https://openalex.org/S143744711","display_name":"Japanese Journal of Applied Physics","issn_l":"0021-4922","issn":["0021-4922","1347-4065"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-d","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310311669","host_organization_name":"Institute of Physics","host_organization_lineage":["https://openalex.org/P4310311669"],"host_organization_lineage_names":["Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Japanese Journal of Applied Physics","raw_type":"journal-article"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2005462741.pdf","grobid_xml":"https://content.openalex.org/works/W2005462741.grobid-xml"},"referenced_works_count":2,"referenced_works":["https://openalex.org/W1536508252","https://openalex.org/W2086077539"],"related_works":["https://openalex.org/W2088682384","https://openalex.org/W2126533123","https://openalex.org/W2102428634","https://openalex.org/W2053708899","https://openalex.org/W2000212644","https://openalex.org/W2019552165","https://openalex.org/W2022311498","https://openalex.org/W2128845938","https://openalex.org/W1976563328","https://openalex.org/W2014314942"],"abstract_inverted_index":{"We":[0],"fabricated":[1],"InAlGaN":[2,73],"quaternary":[3],"ultraviolet":[4],"(UV)-light-emitting":[5],"diodes":[6],"(LEDs)":[7],"on":[8,17,23,36,48],"GaN":[9,18,38,50,70],"substrates":[10,71],"with":[11],"a":[12,37,41,49],"low":[13],"dislocation":[14],"density":[15],"and":[16,26,52],"templates":[19],"consisting":[20],"of":[21,30,60,68],"n-GaN":[22],"sapphire":[24],"substrates,":[25],"compared":[27],"the":[28,66],"characteristics":[29],"these":[31],"LEDs.":[32,75],"A":[33],"UV":[34,74],"LED":[35],"substrate":[39],"showed":[40],"considerably":[42],"higher":[43],"output":[44],"power":[45],"than":[46],"that":[47],"template":[51],"no":[53],"saturation":[54],"even":[55],"at":[56],"an":[57],"injection":[58],"current":[59],"500":[61],"mA.":[62],"Cathodeluminescence":[63],"images":[64],"indicated":[65],"advantages":[67],"using":[69],"in":[72]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2026-10-14T16:39:01.820549","created_date":"2016-06-24T00:00:00"}