{"id":"https://openalex.org/W2005380170","doi":"https://doi.org/10.1147/rd.431.0039","title":"Plasma-etching processes for ULSI semiconductor circuits","display_name":"Plasma-etching processes for ULSI semiconductor circuits","publication_year":1999,"publication_date":"1999-01-01","ids":{"openalex":"https://openalex.org/W2005380170","doi":"https://doi.org/10.1147/rd.431.0039","mag":"2005380170"},"language":"en","primary_location":{"id":"doi:10.1147/rd.431.0039","doi":"https://doi.org/10.1147/rd.431.0039","is_oa":false,"landing_page_url":"https://doi.org/10.1147/rd.431.0039","pdf_url":null,"source":{"id":"https://openalex.org/S4210219925","display_name":"IBM Journal of Research and Development","issn_l":"0018-8646","issn":["0018-8646","2151-8556"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320652","host_organization_name":"IBM","host_organization_lineage":["https://openalex.org/P4310320652"],"host_organization_lineage_names":["IBM"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IBM Journal of Research and Development","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5023406052","display_name":"M. Armacost","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Armacost","raw_affiliation_strings":["IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5084781871","display_name":"Peter D. Hoh","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"P. D. Hoh","raw_affiliation_strings":["IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030540979","display_name":"Rich S. Wise","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Wise","raw_affiliation_strings":["IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047171802","display_name":"Wenjin Yan","orcid":"https://orcid.org/0000-0003-0947-7836","observed_orcids":["https://orcid.org/0000-0003-0947-7836","https://orcid.org/0000-0003-3763-9812"]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"W. Yan","raw_affiliation_strings":["IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113560347","display_name":"J.J. Brown","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J.J. Brown","raw_affiliation_strings":["IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078705057","display_name":"John H. Keller","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J. H. Keller","raw_affiliation_strings":["IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056161927","display_name":"George A. Kaplita","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"G. A. Kaplita","raw_affiliation_strings":["IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052486554","display_name":"Scott D. Halle","orcid":"https://orcid.org/0000-0002-5466-8298","observed_orcids":["https://orcid.org/0000-0002-5466-8298"]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. D. Halle","raw_affiliation_strings":["IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110919955","display_name":"K. Paul Muller","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"K. P. Muller","raw_affiliation_strings":["IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001356909","display_name":"Munir D. Naeem","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. D. Naeem","raw_affiliation_strings":["IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","Siemens Microelectronics, IBM Semiconductor Research and Development Center, Hopewell Junction, New York"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"Siemens Microelectronics, IBM Semiconductor Research and Development Center, Hopewell Junction, New York","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080589941","display_name":"Sunil Srinivasan","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Srinivasan","raw_affiliation_strings":["IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","Siemens Microelectronics, IBM Semiconductor Research and Development Center, Hopewell Junction, New York"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"Siemens Microelectronics, IBM Semiconductor Research and Development Center, Hopewell Junction, New York","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109711009","display_name":"Hong Ng","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"H. Y. Ng","raw_affiliation_strings":["IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell Junction, New York#TAB#","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":null,"display_name":"M. Gutsche","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M. Gutsche","raw_affiliation_strings":["IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","Siemens Microelectronics, IBM Semiconductor Research and Development Center, Hopewell Junction, New York"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"Siemens Microelectronics, IBM Semiconductor Research and Development Center, Hopewell Junction, New York","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055067041","display_name":"A. Gutmann","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. Gutmann","raw_affiliation_strings":["IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","Siemens Microelectronics, IBM Semiconductor Research and Development Center, Hopewell Junction, New York"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"Siemens Microelectronics, IBM Semiconductor Research and Development Center, Hopewell Junction, New York","institution_ids":["https://openalex.org/I1341412227"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5011936735","display_name":"B. Spuler","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"B. Spuler","raw_affiliation_strings":["IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","Siemens Microelectronics, IBM Semiconductor Research and Development Center, Hopewell Junction, New York"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, IBM Semiconductor Research and Development Center, Hopewell, NY, USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"Siemens Microelectronics, IBM Semiconductor Research and Development Center, Hopewell Junction, New York","institution_ids":["https://openalex.org/I1341412227"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I1341412227"],"apc_list":null,"apc_paid":null,"fwci":2.9927,"has_fulltext":false,"cited_by_count":58,"citation_normalized_percentile":{"value":0.89921737,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":97},"biblio":{"volume":"43","issue":"1.2","first_page":"39","last_page":"72"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10781","display_name":"Low-Pressure Plasma Processing and Diagnostics","score":0.9473000168800354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10781","display_name":"Low-Pressure Plasma Processing and Diagnostics","score":0.9473000168800354,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.04430000111460686,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.002099999925121665,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/plasma-etching","display_name":"plasma etching","score":0.9990000128746033},{"id":"https://openalex.org/keywords/antireflection-coatings","display_name":"antireflection coatings","score":0.8899999856948853},{"id":"https://openalex.org/keywords/high-aspect-ratio-etching","display_name":"high aspect ratio etching","score":0.8650000095367432},{"id":"https://openalex.org/keywords/self-aligned-contacts","display_name":"self-aligned contacts","score":0.8080000281333923},{"id":"https://openalex.org/keywords/etch-selectivity","display_name":"etch selectivity","score":0.8199999928474426},{"id":"https://openalex.org/keywords/linewidth-variation","display_name":"linewidth variation","score":0.6930000185966492},{"id":"https://openalex.org/keywords/device-damage","display_name":"device damage","score":0.7720000147819519},{"id":"https://openalex.org/keywords/dense-plasma","display_name":"high-density plasma","score":0.8309999704360962},{"id":"https://openalex.org/keywords/capacitively-coupled-plasma","display_name":"capacitively coupled plasma","score":0.7239999771118164}],"concepts":[{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.788163423538208},{"id":"https://openalex.org/C107187091","wikidata":"https://www.wikidata.org/wiki/Q2392011","display_name":"Plasma etching","level":4,"score":0.7071037292480469},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.6811597347259521},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6769447326660156},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.6139910817146301},{"id":"https://openalex.org/C204223013","wikidata":"https://www.wikidata.org/wiki/Q133036","display_name":"Lithography","level":2,"score":0.5782725811004639},{"id":"https://openalex.org/C66018809","wikidata":"https://www.wikidata.org/wiki/Q1570432","display_name":"Semiconductor device fabrication","level":3,"score":0.5687940716743469},{"id":"https://openalex.org/C1291036","wikidata":"https://www.wikidata.org/wiki/Q1191918","display_name":"Dry etching","level":4,"score":0.5609620809555054},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.5388519167900085},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.5317631363868713},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5249826312065125},{"id":"https://openalex.org/C105487726","wikidata":"https://www.wikidata.org/wiki/Q622938","display_name":"Photolithography","level":2,"score":0.5206400752067566},{"id":"https://openalex.org/C180088628","wikidata":"https://www.wikidata.org/wiki/Q1069404","display_name":"Chemical-mechanical planarization","level":3,"score":0.5205332040786743},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.4724738299846649},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.45952850580215454},{"id":"https://openalex.org/C130472188","wikidata":"https://www.wikidata.org/wiki/Q1640159","display_name":"Reactive-ion etching","level":4,"score":0.4426393210887909},{"id":"https://openalex.org/C53524968","wikidata":"https://www.wikidata.org/wiki/Q7315582","display_name":"Resist","level":3,"score":0.42787712812423706},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4260692596435547},{"id":"https://openalex.org/C33220542","wikidata":"https://www.wikidata.org/wiki/Q6086567","display_name":"Isotropic etching","level":4,"score":0.41684114933013916},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.17997458577156067},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.10984128713607788},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.05219089984893799},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1147/rd.431.0039","doi":"https://doi.org/10.1147/rd.431.0039","is_oa":false,"landing_page_url":"https://doi.org/10.1147/rd.431.0039","pdf_url":null,"source":{"id":"https://openalex.org/S4210219925","display_name":"IBM Journal of Research and Development","issn_l":"0018-8646","issn":["0018-8646","2151-8556"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","norway-1","poland-70","russia-white-list-1"],"host_organization":"https://openalex.org/P4310320652","host_organization_name":"IBM","host_organization_lineage":["https://openalex.org/P4310320652"],"host_organization_lineage_names":["IBM"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IBM Journal of Research and Development","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W202876497","https://openalex.org/W635001031","https://openalex.org/W2034972470","https://openalex.org/W2064516642","https://openalex.org/W2066951675","https://openalex.org/W2076329047","https://openalex.org/W2152744728","https://openalex.org/W2205590358"],"related_works":["https://openalex.org/W2792025616","https://openalex.org/W571149497","https://openalex.org/W1995687750","https://openalex.org/W1965504141","https://openalex.org/W2043142236","https://openalex.org/W2672900037","https://openalex.org/W1974140104","https://openalex.org/W1665547045","https://openalex.org/W4297293618","https://openalex.org/W2021427360"],"abstract_inverted_index":{"An":[0],"overview":[1],"is":[2,79],"presented":[3],"of":[4,11,32,51,151],"plasma-etching":[5,120],"processes":[6],"used":[7],"in":[8,21,38,41],"the":[9,49,59,68,89],"fabrication":[10],"ULSI":[12],"(ultralarge-scale":[13],"integrated)":[14],"semiconductor":[15],"circuits,":[16],"with":[17],"emphasis":[18],"on":[19],"work":[20],"our":[22],"facilities.":[23],"Such":[24],"circuits":[25],"contain":[26],"structures":[27,93],"having":[28],"minimum":[29],"pattern":[30],"widths":[31],"0.25":[33],"\u00b5m":[34],"and":[35,54,83,99,114,136],"less.":[36],"Challenges":[37],"plasma":[39],"etching":[40,71],"evolving":[42],"to":[43,64,134],"such":[44,87],"dimensions":[45],"have":[46],"come":[47],"from":[48,127],"implementation":[50],"antireflective":[52],"coatings":[53],"thinner,":[55],"more":[56],"etch-sensitive":[57],"photoresists;":[58],"increased":[60,84],"aspect":[61],"ratios":[62],"needed":[63,73],"meet":[65],"design":[66],"requirements;":[67],"additional":[69],"hard-mask":[70],"steps":[72],"at":[74,76],"levels":[75,124],"which":[77],"lithography":[78],"unsuitable":[80],"for":[81,105,122,148],"patterning;":[82],"selectivity":[85],"requirements,":[86],"as":[88],"requirement":[90],"that":[91],"contact":[92],"be":[94],"self-aligning.":[95],"Future":[96],"circuit":[97],"density":[98],"performance":[100],"requirements":[101],"dictate":[102],"tighter":[103],"specifications":[104],"linewidth":[106],"variations":[107],"permitted":[108],"across":[109],"a":[110,118],"wafer,":[111],"microloading":[112],"effects,":[113],"device":[115],"damage.":[116],"As":[117],"result,":[119],"systems":[121,133,138],"critical":[123],"are":[125],"migrating":[126],"traditional":[128],"multifilm,":[129],"capacitively":[130],"coupled":[131],"low-density-plasma":[132],"medium-":[135],"high-density-plasma":[137],"employing":[139],"exotic":[140],"or":[141],"highly":[142],"polymerizing":[143],"chemical":[144],"species":[145],"specifically":[146],"designed":[147],"one":[149],"type":[150],"film.":[152]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2016,"cited_by_count":3},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":3}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}