{"id":"https://openalex.org/W2005348153","doi":"https://doi.org/10.1016/s0022-0248(01)01303-3","title":"Material optimisation for AlGaN/GaN HFET applications","display_name":"Material optimisation for AlGaN/GaN HFET applications","publication_year":2001,"publication_date":"2001-09-01","ids":{"openalex":"https://openalex.org/W2005348153","doi":"https://doi.org/10.1016/s0022-0248(01)01303-3","mag":"2005348153"},"language":"en","primary_location":{"id":"doi:10.1016/s0022-0248(01)01303-3","doi":"https://doi.org/10.1016/s0022-0248(01)01303-3","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0022-0248(01)01303-3","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"http://hdl.handle.net/20.500.12210/44499","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5065925942","display_name":"Zahia Bougrioua","orcid":"https://orcid.org/0000-0003-3579-7091","observed_orcids":["https://orcid.org/0000-0003-3579-7091"]},"institutions":[{"id":"https://openalex.org/I32597200","display_name":"Ghent University","ror":"https://ror.org/00cv9y106","country_code":"BE","type":"education","lineage":["https://openalex.org/I32597200"]}],"countries":["BE"],"is_corresponding":true,"raw_author_name":"Z. Bougrioua","raw_affiliation_strings":["INTEC, Ghent University-IMEC, Sint-Pietersnieuwstraat 41, B-9000 Ghent, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"INTEC, Ghent University-IMEC, Sint-Pietersnieuwstraat 41, B-9000 Ghent, Belgium","institution_ids":["https://openalex.org/I32597200"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022887237","display_name":"Ingrid Moerman","orcid":"https://orcid.org/0000-0003-2377-3674","observed_orcids":["https://orcid.org/0000-0003-2377-3674"]},"institutions":[{"id":"https://openalex.org/I32597200","display_name":"Ghent University","ror":"https://ror.org/00cv9y106","country_code":"BE","type":"education","lineage":["https://openalex.org/I32597200"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"I. Moerman","raw_affiliation_strings":["INTEC, Ghent University-IMEC, Sint-Pietersnieuwstraat 41, B-9000 Ghent, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"INTEC, Ghent University-IMEC, Sint-Pietersnieuwstraat 41, B-9000 Ghent, Belgium","institution_ids":["https://openalex.org/I32597200"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055928468","display_name":"Nikhil Sharma","orcid":"https://orcid.org/0000-0002-6441-8452","observed_orcids":["https://orcid.org/0000-0002-6441-8452"]},"institutions":[{"id":"https://openalex.org/I241749","display_name":"University of Cambridge","ror":"https://ror.org/013meh722","country_code":"GB","type":"education","lineage":["https://openalex.org/I241749"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"N. Sharma","raw_affiliation_strings":["Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, UK","institution_ids":["https://openalex.org/I241749"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086914673","display_name":"R.H. Wallis","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"R.H. Wallis","raw_affiliation_strings":["Marconi Caswell Ltd, Caswell, Towcester, Northants NN12 8 EQ, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Marconi Caswell Ltd, Caswell, Towcester, Northants NN12 8 EQ, UK","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078639964","display_name":"Jan Cheyns","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I32597200","display_name":"Ghent University","ror":"https://ror.org/00cv9y106","country_code":"BE","type":"education","lineage":["https://openalex.org/I32597200"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"J. Cheyns","raw_affiliation_strings":["INTEC, Ghent University-IMEC, Sint-Pietersnieuwstraat 41, B-9000 Ghent, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"INTEC, Ghent University-IMEC, Sint-Pietersnieuwstraat 41, B-9000 Ghent, Belgium","institution_ids":["https://openalex.org/I32597200"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114104789","display_name":"K. Jacobs","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I32597200","display_name":"Ghent University","ror":"https://ror.org/00cv9y106","country_code":"BE","type":"education","lineage":["https://openalex.org/I32597200"]}],"countries":["BE"],"is_corresponding":false,"raw_author_name":"K. Jacobs","raw_affiliation_strings":["INTEC, Ghent University-IMEC, Sint-Pietersnieuwstraat 41, B-9000 Ghent, Belgium"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"INTEC, Ghent University-IMEC, Sint-Pietersnieuwstraat 41, B-9000 Ghent, Belgium","institution_ids":["https://openalex.org/I32597200"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000288516","display_name":"Edward J. Thrush","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210157757","display_name":"Thomas Swan (United Kingdom)","ror":"https://ror.org/05c27eq92","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210157757"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"E.J. Thrush","raw_affiliation_strings":["Thomas Swan Scientific Equipment Ltd., Buckingway Business Park, Cambridge CB4 5UG, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Thomas Swan Scientific Equipment Ltd., Buckingway Business Park, Cambridge CB4 5UG, UK","institution_ids":["https://openalex.org/I4210157757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5072731976","display_name":"Laurence CONSIDINE","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210157757","display_name":"Thomas Swan (United Kingdom)","ror":"https://ror.org/05c27eq92","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210157757"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"L. Considine","raw_affiliation_strings":["Thomas Swan Scientific Equipment Ltd., Buckingway Business Park, Cambridge CB4 5UG, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Thomas Swan Scientific Equipment Ltd., Buckingway Business Park, Cambridge CB4 5UG, UK","institution_ids":["https://openalex.org/I4210157757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022452774","display_name":"Richard Beanland","orcid":"https://orcid.org/0000-0003-1749-4134","observed_orcids":["https://orcid.org/0000-0003-1749-4134"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"R. Beanland","raw_affiliation_strings":["Marconi Caswell Ltd, Caswell, Towcester, Northants NN12 8 EQ, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Marconi Caswell Ltd, Caswell, Towcester, Northants NN12 8 EQ, UK","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108485642","display_name":"J. L. Farvacque","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I2279609970","display_name":"Universit\u00e9 de Lille","ror":"https://ror.org/02kzqn938","country_code":"FR","type":"education","lineage":["https://openalex.org/I2279609970"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J.-L. Farvacque","raw_affiliation_strings":["LSPES, Universit\u00e9 des Sciences et Technologies de Lille, 59650 Villeneuve d\u2019Ascq, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"LSPES, Universit\u00e9 des Sciences et Technologies de Lille, 59650 Villeneuve d\u2019Ascq, France","institution_ids":["https://openalex.org/I2279609970"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5020842649","display_name":"Colin John Humphreys","orcid":"https://orcid.org/0000-0001-5053-3380","observed_orcids":["https://orcid.org/0000-0001-5053-3380"]},"institutions":[{"id":"https://openalex.org/I241749","display_name":"University of Cambridge","ror":"https://ror.org/013meh722","country_code":"GB","type":"education","lineage":["https://openalex.org/I241749"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"C. Humphreys","raw_affiliation_strings":["Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, UK","institution_ids":["https://openalex.org/I241749"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5065925942"],"corresponding_institution_ids":["https://openalex.org/I32597200"],"apc_list":{"value":3110,"currency":"USD","value_usd":3110},"apc_paid":null,"fwci":2.4858,"has_fulltext":false,"cited_by_count":32,"citation_normalized_percentile":{"value":0.90145913,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":93},"biblio":{"volume":"230","issue":"3-4","first_page":"573","last_page":"578"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/algan-gan-heterostructures","display_name":"AlGaN/GaN heterostructures","score":0.9290000200271606},{"id":"https://openalex.org/keywords/heterostructure-field-effect-transistors","display_name":"heterostructure field-effect transistors","score":0.9570000171661377},{"id":"https://openalex.org/keywords/epitaxial-growth","display_name":"epitaxial growth","score":0.6930000185966492},{"id":"https://openalex.org/keywords/low-pressure-movpe","display_name":"low-pressure MOVPE","score":0.6710000038146973},{"id":"https://openalex.org/keywords/two-dimensional-electron-gas","display_name":"two-dimensional electron gas","score":0.8970000147819519},{"id":"https://openalex.org/keywords/electron-mobility","display_name":"electron mobility","score":0.7860000133514404},{"id":"https://openalex.org/keywords/sheet-carrier-density","display_name":"sheet carrier density","score":0.968999981880188},{"id":"https://openalex.org/keywords/aluminum-content","display_name":"aluminum content","score":0.6779999732971191},{"id":"https://openalex.org/keywords/impurity-compensation","display_name":"impurity compensation","score":0.6389999985694885},{"id":"https://openalex.org/keywords/dislocations","display_name":"dislocations","score":0.6159999966621399},{"id":"https://openalex.org/keywords/buffer-layer-thickness","display_name":"buffer layer thickness","score":0.45899999141693115}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8487176895141602},{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.7281547784805298},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.6857192516326904},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6707944273948669},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.6091600060462952},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.5990856885910034},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5279173851013184},{"id":"https://openalex.org/C71987851","wikidata":"https://www.wikidata.org/wiki/Q7216430","display_name":"Impurity","level":2,"score":0.4699925184249878},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.18879574537277222},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11135789752006531},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.07609871029853821},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.07553493976593018},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":4,"locations":[{"id":"doi:10.1016/s0022-0248(01)01303-3","doi":"https://doi.org/10.1016/s0022-0248(01)01303-3","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0022-0248(01)01303-3","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"},{"id":"pmh:oai:HAL:hal-02906506v1","doi":null,"is_oa":false,"landing_page_url":"https://hal.science/hal-02906506","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4405252976","host_organization_name":"Centre pour la Communication Scientifique Directe","host_organization_lineage":["https://openalex.org/I4405252976"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Journal of Crystal Growth, 2001, 230 (3-4), pp.573-578. ⟨10.1016/S0022-0248(01)01303-3⟩","raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:oai:archive.ugent.be:129157","doi":null,"is_oa":false,"landing_page_url":"http://hdl.handle.net/1854/LU-129157","pdf_url":null,"source":{"id":"https://openalex.org/S4306400478","display_name":"Ghent University Academic Bibliography (Ghent University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I32597200","host_organization_name":"Ghent University","host_organization_lineage":["https://openalex.org/I32597200"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"ISSN: 0022-0248","raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:oai:lilloa.univ-lille.fr:20.500.12210/44499","doi":null,"is_oa":true,"landing_page_url":"http://hdl.handle.net/20.500.12210/44499","pdf_url":null,"source":{"id":"https://openalex.org/S4306402203","display_name":"LillOA (Universit\u00e9 de Lille (University Of Lille))","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4210123514","host_organization_name":"Centre d'\u00c9tudes en Civilisations, Langues et Lettres \u00c9trang\u00e8res","host_organization_lineage":["https://openalex.org/I4210123514"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/conferenceObject"}],"best_oa_location":{"id":"pmh:oai:lilloa.univ-lille.fr:20.500.12210/44499","doi":null,"is_oa":true,"landing_page_url":"http://hdl.handle.net/20.500.12210/44499","pdf_url":null,"source":{"id":"https://openalex.org/S4306402203","display_name":"LillOA (Universit\u00e9 de Lille (University Of Lille))","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4210123514","host_organization_name":"Centre d'\u00c9tudes en Civilisations, Langues et Lettres \u00c9trang\u00e8res","host_organization_lineage":["https://openalex.org/I4210123514"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/conferenceObject"},"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1972665795","https://openalex.org/W1976295025","https://openalex.org/W1979239511","https://openalex.org/W1982031081","https://openalex.org/W1983443828","https://openalex.org/W2004873410","https://openalex.org/W2009891531","https://openalex.org/W2020537924","https://openalex.org/W2043636680","https://openalex.org/W2047079453","https://openalex.org/W2063988554","https://openalex.org/W2064847650","https://openalex.org/W2084786092","https://openalex.org/W2112734063","https://openalex.org/W2113488710","https://openalex.org/W2166183827","https://openalex.org/W2253866451","https://openalex.org/W4239078308"],"related_works":["https://openalex.org/W2029249974","https://openalex.org/W2334883603","https://openalex.org/W1612583816","https://openalex.org/W1970191901","https://openalex.org/W2063697273","https://openalex.org/W1978226030","https://openalex.org/W2042896269","https://openalex.org/W2384209597","https://openalex.org/W2554249918","https://openalex.org/W2909659649"],"abstract_inverted_index":null,"counts_by_year":[{"year":2020,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2014,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}