{"id":"https://openalex.org/W2005305771","doi":"https://doi.org/10.1063/1.2921052","title":"A hydrogen storage layer on the surface of silicon nitride films","display_name":"A hydrogen storage layer on the surface of silicon nitride films","publication_year":2008,"publication_date":"2008-05-12","ids":{"openalex":"https://openalex.org/W2005305771","doi":"https://doi.org/10.1063/1.2921052","mag":"2005305771"},"language":"en","primary_location":{"id":"doi:10.1063/1.2921052","doi":"https://doi.org/10.1063/1.2921052","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.2921052","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100702703","display_name":"Ziyuan Liu","orcid":"https://orcid.org/0009-0002-1367-3004","observed_orcids":["https://orcid.org/0009-0002-1367-3004"]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ziyuan Liu","raw_affiliation_strings":["NEC Electronics Corporation 1 Test and Analysis Engineering Division, , 1753 Shimonumabe, Nakahara-ku, Kawasaki, Kanagawa 211-8668, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NEC Electronics Corporation 1 Test and Analysis Engineering Division, , 1753 Shimonumabe, Nakahara-ku, Kawasaki, Kanagawa 211-8668, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108520323","display_name":"Shuu Ito","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I118347220","display_name":"NEC (Japan)","ror":"https://ror.org/04jndar25","country_code":"JP","type":"company","lineage":["https://openalex.org/I118347220"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shuu Ito","raw_affiliation_strings":["NEC Electronics Corporation 1 Test and Analysis Engineering Division, , 1753 Shimonumabe, Nakahara-ku, Kawasaki, Kanagawa 211-8668, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"NEC Electronics Corporation 1 Test and Analysis Engineering Division, , 1753 Shimonumabe, Nakahara-ku, Kawasaki, Kanagawa 211-8668, Japan","institution_ids":["https://openalex.org/I118347220"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003983147","display_name":"Markus Wilde","orcid":"https://orcid.org/0000-0002-6397-2208","observed_orcids":["https://orcid.org/0000-0002-6397-2208"]},"institutions":[{"id":"https://openalex.org/I4210086780","display_name":"Japan Science and Technology Agency","ror":"https://ror.org/00097mb19","country_code":"JP","type":"government","lineage":["https://openalex.org/I1319490839","https://openalex.org/I4210086780"]},{"id":"https://openalex.org/I4405287318","display_name":"Institute of Industrial Science, The University of Tokyo","ror":"https://ror.org/04t6zpd80","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4405287318","https://openalex.org/I74801974"]},{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Markus Wilde","raw_affiliation_strings":["University of Tokyo 2 Institute of Industrial Science, , and CREST-JST, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Tokyo 2 Institute of Industrial Science, , and CREST-JST, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan","institution_ids":["https://openalex.org/I4210086780","https://openalex.org/I4405287318","https://openalex.org/I74801974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036715462","display_name":"Katsuyuki Fukutani","orcid":"https://orcid.org/0000-0002-6270-3620","observed_orcids":["https://orcid.org/0000-0002-6270-3620"]},"institutions":[{"id":"https://openalex.org/I4210086780","display_name":"Japan Science and Technology Agency","ror":"https://ror.org/00097mb19","country_code":"JP","type":"government","lineage":["https://openalex.org/I1319490839","https://openalex.org/I4210086780"]},{"id":"https://openalex.org/I4405287318","display_name":"Institute of Industrial Science, The University of Tokyo","ror":"https://ror.org/04t6zpd80","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4405287318","https://openalex.org/I74801974"]},{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Katsuyuki Fukutani","raw_affiliation_strings":["University of Tokyo 2 Institute of Industrial Science, , and CREST-JST, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Tokyo 2 Institute of Industrial Science, , and CREST-JST, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan","institution_ids":["https://openalex.org/I4210086780","https://openalex.org/I4405287318","https://openalex.org/I74801974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051510147","display_name":"Ichiro Hirozawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210111000","display_name":"Japan Synchrotron Radiation Research Institute","ror":"https://ror.org/01xjv7358","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210111000"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ichiro Hirozawa","raw_affiliation_strings":["Japan Synchrotron Radiation Research Institute 3 , 1-1-1, Kouto, Sayo, Hyogo 679-5198, SPring-8, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Japan Synchrotron Radiation Research Institute 3 , 1-1-1, Kouto, Sayo, Hyogo 679-5198, SPring-8, Japan","institution_ids":["https://openalex.org/I4210111000"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5051175242","display_name":"Tomoyuki Koganezawa","orcid":"https://orcid.org/0000-0002-9302-5025","observed_orcids":["https://orcid.org/0000-0002-9302-5025"]},"institutions":[{"id":"https://openalex.org/I4210111000","display_name":"Japan Synchrotron Radiation Research Institute","ror":"https://ror.org/01xjv7358","country_code":"JP","type":"facility","lineage":["https://openalex.org/I4210111000"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tomoyuki Koganezawa","raw_affiliation_strings":["Japan Synchrotron Radiation Research Institute 3 , 1-1-1, Kouto, Sayo, Hyogo 679-5198, SPring-8, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Japan Synchrotron Radiation Research Institute 3 , 1-1-1, Kouto, Sayo, Hyogo 679-5198, SPring-8, Japan","institution_ids":["https://openalex.org/I4210111000"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.0905,"has_fulltext":false,"cited_by_count":18,"citation_normalized_percentile":{"value":0.86246841,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":88,"max":97},"biblio":{"volume":"92","issue":"19","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9937000274658203,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9937000274658203,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.0017000000225380063,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.0006000000284984708,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/hydrogen-storage","display_name":"hydrogen storage","score":0.9200000166893005},{"id":"https://openalex.org/keywords/silicon-nitride-films","display_name":"silicon nitride thin films","score":0.9279999732971191},{"id":"https://openalex.org/keywords/n2-annealing","display_name":"N2 annealing","score":0.8410000205039978},{"id":"https://openalex.org/keywords/hydrogen-retention","display_name":"hydrogen retention","score":0.5189999938011169},{"id":"https://openalex.org/keywords/silicon-transistors","display_name":"silicon transistors","score":0.7599999904632568},{"id":"https://openalex.org/keywords/integrated-circuit-fabrication","display_name":"integrated circuit fabrication","score":0.7730000019073486}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7323204874992371},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.6856039762496948},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.6565879583358765},{"id":"https://openalex.org/C2779476251","wikidata":"https://www.wikidata.org/wiki/Q7515030","display_name":"Silicon oxynitride","level":4,"score":0.6369203329086304},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.5841101408004761},{"id":"https://openalex.org/C2778836790","wikidata":"https://www.wikidata.org/wiki/Q5275435","display_name":"Diffusion barrier","level":3,"score":0.5463316440582275},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.5249005556106567},{"id":"https://openalex.org/C2780839960","wikidata":"https://www.wikidata.org/wiki/Q2004543","display_name":"Nuclear reaction analysis","level":3,"score":0.5052774548530579},{"id":"https://openalex.org/C512968161","wikidata":"https://www.wikidata.org/wiki/Q556","display_name":"Hydrogen","level":2,"score":0.4960096776485443},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4787016212940216},{"id":"https://openalex.org/C2779105228","wikidata":"https://www.wikidata.org/wiki/Q2286029","display_name":"Silicon oxide","level":4,"score":0.47638386487960815},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.41240212321281433},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.26667124032974243},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.14884477853775024},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.09158328175544739},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.2921052","doi":"https://doi.org/10.1063/1.2921052","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.2921052","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"sustainable_development_goals_aurora":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1992466084","https://openalex.org/W2007861189","https://openalex.org/W2049468491","https://openalex.org/W2076974404","https://openalex.org/W2091590619","https://openalex.org/W2107314913","https://openalex.org/W2149041497","https://openalex.org/W2151654658"],"related_works":["https://openalex.org/W2324415220","https://openalex.org/W394470939","https://openalex.org/W2054252833","https://openalex.org/W1988197536","https://openalex.org/W4256515841","https://openalex.org/W1498400747","https://openalex.org/W2063915693","https://openalex.org/W1969310731","https://openalex.org/W2051984647","https://openalex.org/W2021234635"],"abstract_inverted_index":{"Composition,":[0],"layer":[1,33,46,70],"structure,":[2],"and":[3,24,87],"H-retaining":[4],"stability":[5],"of":[6,30,38,84],"980\u00b0C":[7],"N2-annealed":[8,39],"silicon":[9,85,88],"nitride-oxide":[10],"(ON)":[11],"stacks":[12],"were":[13],"analyzed":[14],"using":[15],"high":[16],"resolution":[17],"rutherford":[18],"backscattering,":[19],"synchrotron":[20],"x-ray":[21],"specular":[22],"reflectometry,":[23],"nuclear":[25],"reaction":[26],"analysis.":[27],"The":[28,44],"formation":[29],"a":[31],"Si2N2O":[32,45,69],"in":[34,66,79],"the":[35,68,80],"near-surface":[36],"part":[37],"nitride":[40],"films":[41],"was":[42],"discovered.":[43],"can":[47],"store":[48],"hydrogen":[49,74],"species":[50],"that":[51],"are":[52,77],"resistant":[53],"against":[54],"energetic":[55],"electron":[56],"damage":[57],"due":[58],"to":[59],"their":[60],"reduced":[61],"diffusion":[62],"mobility.":[63],"Although":[64],"degrading":[65],"air,":[67],"thus":[71],"provides":[72],"reliable":[73],"species,":[75],"which":[76],"desirable":[78],"integrated":[81],"circuit":[82],"processing":[83],"transistors":[86],"ONO":[89],"trap":[90],"memories.":[91]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":3},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2026-10-24T09:50:30.924529","created_date":"2025-10-10T00:00:00"}