{"id":"https://openalex.org/W2005201260","doi":"https://doi.org/10.1016/s0921-5107(99)00379-7","title":"Effects of ion implantation on the electrical properties of Au/n-Si Schottky diodes","display_name":"Effects of ion implantation on the electrical properties of Au/n-Si Schottky diodes","publication_year":2000,"publication_date":"2000-02-01","ids":{"openalex":"https://openalex.org/W2005201260","doi":"https://doi.org/10.1016/s0921-5107(99)00379-7","mag":"2005201260"},"language":"en","primary_location":{"id":"doi:10.1016/s0921-5107(99)00379-7","doi":"https://doi.org/10.1016/s0921-5107(99)00379-7","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0921-5107(99)00379-7","pdf_url":null,"source":{"id":"https://openalex.org/S4210190818","display_name":"Materials Science and Engineering B","issn_l":"0921-5107","issn":["0921-5107","1873-4944"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-100","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Science and Engineering: B","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109271555","display_name":"Minho Joo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"M.H. Joo","raw_affiliation_strings":["Department of Metallurgical Engineering, School of Materials Science and Engineering, Yonsei University, 134, Shinchon-dong, Seodaemoon-ku, Seoul 120-749, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Metallurgical Engineering, School of Materials Science and Engineering, Yonsei University, 134, Shinchon-dong, Seodaemoon-ku, Seoul 120-749, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100763494","display_name":"Kyoungho Lee","orcid":"https://orcid.org/0000-0003-2353-2547","observed_orcids":["https://orcid.org/0000-0003-2353-2547"]},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]},{"id":"https://openalex.org/I4405259277","display_name":"Samsung Electronics (South Korea)","ror":"https://ror.org/020m7t761","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"K.H. Lee","raw_affiliation_strings":["Samsung Electronics, Kiheung-Eup, Yongin-City, Kyungki-Do, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Kiheung-Eup, Yongin-City, Kyungki-Do, South Korea","institution_ids":["https://openalex.org/I2250650973","https://openalex.org/I4405259277"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056586583","display_name":"Jee-Hun Song","orcid":"https://orcid.org/0000-0003-0718-137X","observed_orcids":["https://orcid.org/0000-0003-0718-137X"]},"institutions":[{"id":"https://openalex.org/I58716616","display_name":"Korea Institute of Science and Technology","ror":"https://ror.org/05kzfa883","country_code":"KR","type":"facility","lineage":["https://openalex.org/I27494661","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098","https://openalex.org/I58716616"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"J.H. Song","raw_affiliation_strings":["Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 130-650, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 130-650, South Korea","institution_ids":["https://openalex.org/I58716616"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5026332374","display_name":"Seongil Im","orcid":"https://orcid.org/0000-0002-7993-0715","observed_orcids":["https://orcid.org/0000-0002-7993-0715","https://orcid.org/0000-0003-0723-5075"]},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"S. Im","raw_affiliation_strings":["Department of Physics, Yonsei University, Seoul 120\u2013749, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Yonsei University, Seoul 120\u2013749, South Korea","institution_ids":["https://openalex.org/I193775966"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5026332374"],"corresponding_institution_ids":["https://openalex.org/I193775966"],"apc_list":{"value":3140,"currency":"USD","value_usd":3140},"apc_paid":null,"fwci":0.5191,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.60005515,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":92},"biblio":{"volume":"71","issue":"1-3","first_page":"224","last_page":"228"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9794999957084656,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9794999957084656,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.00559999980032444,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12166","display_name":"Ion-surface interactions and analysis","score":0.005400000140070915,"subfield":{"id":"https://openalex.org/subfields/2508","display_name":"Surfaces, Coatings and Films"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/schottky-diodes","display_name":"Schottky diodes","score":0.9079999923706055},{"id":"https://openalex.org/keywords/ion-implantation","display_name":"ion implantation","score":0.8190000057220459},{"id":"https://openalex.org/keywords/boron-implantation","display_name":"boron implantation","score":0.9390000104904175},{"id":"https://openalex.org/keywords/silicon-ion-implantation","display_name":"silicon ion implantation","score":0.9710000157356262},{"id":"https://openalex.org/keywords/edge-termination","display_name":"edge termination","score":0.9110000133514404},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"breakdown voltage","score":0.7110000252723694},{"id":"https://openalex.org/keywords/reverse-leakage-current","display_name":"reverse leakage current","score":0.8849999904632568},{"id":"https://openalex.org/keywords/gold-contacts","display_name":"gold contacts","score":0.5080000162124634},{"id":"https://openalex.org/keywords/end-of-range-defects","display_name":"end-of-range defects","score":0.8600000143051147},{"id":"https://openalex.org/keywords/n-type-silicon","display_name":"n-type silicon","score":0.8220000267028809}],"concepts":[{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.9261189699172974},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7417352199554443},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.7370529770851135},{"id":"https://openalex.org/C41823505","wikidata":"https://www.wikidata.org/wiki/Q1436752","display_name":"Ion implantation","level":3,"score":0.7167151570320129},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.665616512298584},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.6642993688583374},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5850282311439514},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.5576269626617432},{"id":"https://openalex.org/C20615193","wikidata":"https://www.wikidata.org/wiki/Q2309288","display_name":"Reverse leakage current","level":4,"score":0.5573644638061523},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.49353039264678955},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4143204092979431},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3400144577026367},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.19010889530181885},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.1688860058784485},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0921-5107(99)00379-7","doi":"https://doi.org/10.1016/s0921-5107(99)00379-7","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0921-5107(99)00379-7","pdf_url":null,"source":{"id":"https://openalex.org/S4210190818","display_name":"Materials Science and Engineering B","issn_l":"0921-5107","issn":["0921-5107","1873-4944"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","dongbi-c","jufo-1","norway-1","poland-100","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Materials Science and Engineering: B","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321314","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1977920155","https://openalex.org/W1998370272","https://openalex.org/W2053088673","https://openalex.org/W2111643244","https://openalex.org/W2145757162","https://openalex.org/W2150066843","https://openalex.org/W2158821958","https://openalex.org/W2168579821","https://openalex.org/W2497202188","https://openalex.org/W3104994155"],"related_works":["https://openalex.org/W2004874852","https://openalex.org/W2001448679","https://openalex.org/W2093161071","https://openalex.org/W2103338478","https://openalex.org/W2319491672","https://openalex.org/W2103903091","https://openalex.org/W2102330417","https://openalex.org/W2056887000","https://openalex.org/W2119232816","https://openalex.org/W2918129396"],"abstract_inverted_index":null,"counts_by_year":[{"year":2021,"cited_by_count":1}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}