{"id":"https://openalex.org/W2005192532","doi":"https://doi.org/10.1587/elex.7.1008","title":"Characterization of SiC power module for high switching frequency operation","display_name":"Characterization of SiC power module for high switching frequency operation","publication_year":2010,"publication_date":"2010-01-01","ids":{"openalex":"https://openalex.org/W2005192532","doi":"https://doi.org/10.1587/elex.7.1008","mag":"2005192532"},"language":"en","primary_location":{"id":"doi:10.1587/elex.7.1008","doi":"https://doi.org/10.1587/elex.7.1008","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.7.1008","pdf_url":"https://www.jstage.jst.go.jp/article/elex/7/14/7_14_1008/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","ki-jl-1","norway-1","poland-20","russia-white-list-3"],"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"bronze","oa_url":"https://www.jstage.jst.go.jp/article/elex/7/14/7_14_1008/_pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5059950859","display_name":"Tsuyoshi Funaki","orcid":"https://orcid.org/0000-0001-8776-5118","observed_orcids":["https://orcid.org/0000-0001-8776-5118"]},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tsuyoshi Funaki","raw_affiliation_strings":["Osaka University, Div. of Electrical, Electronic and Information Eng. Graduate school of Engineering"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Osaka University, Div. of Electrical, Electronic and Information Eng. Graduate school of Engineering","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Hiroyasu Inoue","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I98285908","display_name":"The University of Osaka","ror":"https://ror.org/035t8zc32","country_code":"JP","type":"education","lineage":["https://openalex.org/I98285908"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroyasu Inoue","raw_affiliation_strings":["Osaka University, Div. of Electrical, Electronic and Information Eng. Graduate school of Engineering"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Osaka University, Div. of Electrical, Electronic and Information Eng. Graduate school of Engineering","institution_ids":["https://openalex.org/I98285908"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074920377","display_name":"Masashi Sasagawa","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I162282272","display_name":"ROHM","ror":"https://ror.org/00vttj605","country_code":"JP","type":"company","lineage":["https://openalex.org/I162282272"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masashi Sasagawa","raw_affiliation_strings":["Rohm Co. Ltd"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Rohm Co. Ltd","institution_ids":["https://openalex.org/I162282272"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5086485936","display_name":"Takashi Nakamura","orcid":"https://orcid.org/0000-0003-0326-1903","observed_orcids":["https://orcid.org/0000-0003-0326-1903"]},"institutions":[{"id":"https://openalex.org/I162282272","display_name":"ROHM","ror":"https://ror.org/00vttj605","country_code":"JP","type":"company","lineage":["https://openalex.org/I162282272"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takashi Nakamura","raw_affiliation_strings":["Rohm Co. Ltd"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Rohm Co. Ltd","institution_ids":["https://openalex.org/I162282272"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":true,"cited_by_count":9,"citation_normalized_percentile":{"value":0.15943786,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":95},"biblio":{"volume":"7","issue":"14","first_page":"1008","last_page":"1013"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10228","display_name":"Multilevel Inverters and Converters","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/sic-power-modules","display_name":"SiC power modules","score":0.9259999990463257},{"id":"https://openalex.org/keywords/sic-mosfet","display_name":"SiC MOSFET","score":0.921999990940094},{"id":"https://openalex.org/keywords/high-frequency-switching","display_name":"high switching frequency","score":0.9409999847412109},{"id":"https://openalex.org/keywords/switching-losses","display_name":"switching losses","score":0.871999979019165},{"id":"https://openalex.org/keywords/boost-converter","display_name":"boost converter","score":0.8600000143051147},{"id":"https://openalex.org/keywords/current-voltage-characteristics","display_name":"current-voltage characteristics","score":0.7950000166893005},{"id":"https://openalex.org/keywords/power-semiconductor-switching","display_name":"power semiconductor switching","score":0.3400000035762787}],"concepts":[{"id":"https://openalex.org/C2780841128","wikidata":"https://www.wikidata.org/wiki/Q5073781","display_name":"Characterization (materials science)","level":2,"score":0.6971246600151062},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5513187050819397},{"id":"https://openalex.org/C2777151078","wikidata":"https://www.wikidata.org/wiki/Q30671714","display_name":"Switching frequency","level":3,"score":0.4820009768009186},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.42899808287620544},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4198862910270691},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.40395575761795044},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19622114300727844},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09892618656158447},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0940999686717987},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.08766135573387146},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1587/elex.7.1008","doi":"https://doi.org/10.1587/elex.7.1008","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.7.1008","pdf_url":"https://www.jstage.jst.go.jp/article/elex/7/14/7_14_1008/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","ki-jl-1","norway-1","poland-20","russia-white-list-3"],"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"}],"best_oa_location":{"id":"doi:10.1587/elex.7.1008","doi":"https://doi.org/10.1587/elex.7.1008","is_oa":true,"landing_page_url":"https://doi.org/10.1587/elex.7.1008","pdf_url":"https://www.jstage.jst.go.jp/article/elex/7/14/7_14_1008/_pdf","source":{"id":"https://openalex.org/S207433681","display_name":"IEICE Electronics Express","issn_l":"1349-2543","issn":["1349-2543","1349-9467"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","jufo-1","ki-jl-1","norway-1","poland-20","russia-white-list-3"],"host_organization":"https://openalex.org/P4320800604","host_organization_name":"Institute of Electronics, Information and Communication Engineers","host_organization_lineage":["https://openalex.org/P4320800604"],"host_organization_lineage_names":["Institute of Electronics, Information and Communication Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEICE Electronics Express","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.651199996471405,"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure"},{"score":0.571399986743927,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2005192532.pdf","grobid_xml":"https://content.openalex.org/works/W2005192532.grobid-xml"},"referenced_works_count":7,"referenced_works":["https://openalex.org/W1996920421","https://openalex.org/W2004930617","https://openalex.org/W2051938988","https://openalex.org/W2097550317","https://openalex.org/W2102947425","https://openalex.org/W2117924042","https://openalex.org/W2154017162"],"related_works":["https://openalex.org/W2078494083","https://openalex.org/W1980045847","https://openalex.org/W1545313670","https://openalex.org/W3166457930","https://openalex.org/W2962935972","https://openalex.org/W2035250623","https://openalex.org/W3120672425","https://openalex.org/W3048328303","https://openalex.org/W4407304610","https://openalex.org/W3180384839"],"abstract_inverted_index":{"The":[0,66],"authors":[1],"developed":[2,73],"SiC":[3,13,54,74],"power":[4,55,75],"module":[5,56,76],"with":[6,31],"large":[7],"rated":[8],"current":[9],"by":[10,28],"connecting":[11],"multiple":[12],"MOSFETs":[14],"in":[15,60],"parallel.":[16],"This":[17],"paper":[18],"characterizes":[19],"and":[20,42,81],"evaluates":[21],"its":[22],"high":[23],"switching":[24,50,79,83],"frequency":[25],"operation":[26],"performance":[27],"comparing":[29],"it":[30],"the":[32,38,49,53,61,69,72],"conventional":[33],"Si":[34],"IGBT":[35],"module.":[36],"First,":[37],"static":[39],"current-voltage":[40],"characteristics":[41,45],"terminal":[43],"capacitance-voltage":[44],"are":[46],"evaluated.":[47],"Then,":[48],"behavior":[51],"of":[52,71],"is":[57],"experimentally":[58],"evaluated":[59],"DC-DC":[62],"boost":[63],"converter":[64],"circuit.":[65],"results":[67],"clarified":[68],"superiority":[70],"for":[77],"fast":[78],"capability":[80],"low":[82],"loss.":[84]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}