{"id":"https://openalex.org/W2004946005","doi":"https://doi.org/10.1063/1.1939073","title":"Nanometer-scale crystallization of thin HfO2 films studied by HF-chemical etching","display_name":"Nanometer-scale crystallization of thin HfO2 films studied by HF-chemical etching","publication_year":2005,"publication_date":"2005-05-20","ids":{"openalex":"https://openalex.org/W2004946005","doi":"https://doi.org/10.1063/1.1939073","mag":"2004946005"},"language":"en","primary_location":{"id":"doi:10.1063/1.1939073","doi":"https://doi.org/10.1063/1.1939073","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1939073","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"Shinji Fujii","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210127336","display_name":"Association of Super-Advanced Electronics","ror":"https://ror.org/0292ym357","country_code":"JP","type":"other","lineage":["https://openalex.org/I4210127336"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shinji Fujii","raw_affiliation_strings":["MIRAI , Association of Super-Advanced Electronics Technology (ASET), Tsukuba 305-8569, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MIRAI , Association of Super-Advanced Electronics Technology (ASET), Tsukuba 305-8569, Japan","institution_ids":["https://openalex.org/I4210127336"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056052720","display_name":"Noriyuki Miyata","orcid":"https://orcid.org/0000-0003-0964-2694","observed_orcids":["https://orcid.org/0000-0003-0964-2694"]},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Noriyuki Miyata","raw_affiliation_strings":["MIRAI , Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (ASRC, AIST), Tsukuba 305-8562, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MIRAI , Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (ASRC, AIST), Tsukuba 305-8562, Japan","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075919114","display_name":"Shinji Migita","orcid":"https://orcid.org/0000-0002-5936-9182","observed_orcids":["https://orcid.org/0000-0002-5936-9182"]},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shinji Migita","raw_affiliation_strings":["MIRAI , Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (ASRC, AIST), Tsukuba 305-8562, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MIRAI , Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (ASRC, AIST), Tsukuba 305-8562, Japan","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017841002","display_name":"Tsuyoshi Horikawa","orcid":"https://orcid.org/0000-0002-0084-0654","observed_orcids":["https://orcid.org/0000-0002-0084-0654"]},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Tsuyoshi Horikawa","raw_affiliation_strings":["MIRAI , Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (ASRC, AIST), Tsukuba 305-8562, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MIRAI , Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (ASRC, AIST), Tsukuba 305-8562, Japan","institution_ids":["https://openalex.org/I73613424"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5033762025","display_name":"Akira Toriumi","orcid":"https://orcid.org/0009-0005-0275-0854","observed_orcids":["https://orcid.org/0009-0005-0275-0854"]},"institutions":[{"id":"https://openalex.org/I73613424","display_name":"National Institute of Advanced Industrial Science and Technology","ror":"https://ror.org/01703db54","country_code":"JP","type":"government","lineage":["https://openalex.org/I73613424"]},{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Akira Toriumi","raw_affiliation_strings":["MIRAI , Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (ASRC, AIST), Tsukuba 305-8569, Japan and , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan","The University of Tokyo , Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (ASRC, AIST), Tsukuba 305-8569, Japan and , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan","MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (ASRC, AIST), Tsukuba 305-8569, Japan and The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"MIRAI , Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (ASRC, AIST), Tsukuba 305-8569, Japan and , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan","institution_ids":["https://openalex.org/I73613424"]},{"raw_affiliation_string":"The University of Tokyo , Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (ASRC, AIST), Tsukuba 305-8569, Japan and , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan","institution_ids":["https://openalex.org/I73613424","https://openalex.org/I74801974"]},{"raw_affiliation_string":"MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (ASRC, AIST), Tsukuba 305-8569, Japan and The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan","institution_ids":["https://openalex.org/I73613424","https://openalex.org/I74801974"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.3814,"has_fulltext":false,"cited_by_count":48,"citation_normalized_percentile":{"value":0.9145288,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":88,"max":98},"biblio":{"volume":"86","issue":"21","first_page":"1","last_page":"212907"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.98580002784729,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.98580002784729,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.004699999932199717,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.004000000189989805,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/hafnium-oxide","display_name":"hafnium oxide","score":0.8899999856948853},{"id":"https://openalex.org/keywords/hfo2-thin-films","display_name":"HfO2 thin films","score":0.9200000166893005},{"id":"https://openalex.org/keywords/crystalline-nuclei","display_name":"crystalline nuclei","score":0.718999981880188},{"id":"https://openalex.org/keywords/metal-organic-chemical-vapor-deposition","display_name":"metalorganic chemical vapor deposition","score":0.9169999957084656},{"id":"https://openalex.org/keywords/deposition-temperature","display_name":"deposition temperature","score":0.9160000085830688},{"id":"https://openalex.org/keywords/nucleation-density","display_name":"nucleation density","score":0.6859999895095825}],"concepts":[{"id":"https://openalex.org/C203036418","wikidata":"https://www.wikidata.org/wiki/Q284256","display_name":"Crystallization","level":2,"score":0.8115806579589844},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.7611805200576782},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.6894510388374329},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.6759254336357117},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6554906368255615},{"id":"https://openalex.org/C77066764","wikidata":"https://www.wikidata.org/wiki/Q178674","display_name":"Nanometre","level":2,"score":0.6366141438484192},{"id":"https://openalex.org/C64297162","wikidata":"https://www.wikidata.org/wiki/Q1987070","display_name":"Deposition (geology)","level":3,"score":0.5579233765602112},{"id":"https://openalex.org/C33220542","wikidata":"https://www.wikidata.org/wiki/Q6086567","display_name":"Isotropic etching","level":4,"score":0.46413323283195496},{"id":"https://openalex.org/C183866003","wikidata":"https://www.wikidata.org/wiki/Q515503","display_name":"Combustion chemical vapor deposition","level":4,"score":0.4457832872867584},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.444620817899704},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.34885895252227783},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.34723228216171265},{"id":"https://openalex.org/C75937256","wikidata":"https://www.wikidata.org/wiki/Q1440781","display_name":"Carbon film","level":3,"score":0.2959165573120117},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.2370891571044922},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.16783607006072998},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.11328169703483582},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.056873977184295654},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C2816523","wikidata":"https://www.wikidata.org/wiki/Q180184","display_name":"Sediment","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1063/1.1939073","doi":"https://doi.org/10.1063/1.1939073","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1939073","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},{"id":"mag:3135781860","doi":null,"is_oa":false,"landing_page_url":"https://jglobal.jst.go.jp/detail?JGLOBAL_ID=200902275080458810","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":false,"raw_source_name":"Applied Physics Letters","raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W1976862169","https://openalex.org/W1984824120","https://openalex.org/W2004169869","https://openalex.org/W2037587145","https://openalex.org/W2073898770","https://openalex.org/W2076614108","https://openalex.org/W2086190855","https://openalex.org/W2169933013"],"related_works":["https://openalex.org/W2405291203","https://openalex.org/W2104989744","https://openalex.org/W2004728674","https://openalex.org/W4408286372","https://openalex.org/W843920470","https://openalex.org/W142465658","https://openalex.org/W1972179520","https://openalex.org/W2036748586","https://openalex.org/W4252647168","https://openalex.org/W2144573290"],"abstract_inverted_index":{"We":[0,56],"used":[1],"a":[2,69],"HF-chemical":[3],"etching":[4],"process":[5,71],"to":[6],"examine":[7],"crystalline":[8,24,77],"structures":[9],"in":[10,68],"thin":[11,62],"HfO2":[12,25,32,63,78],"films":[13],"grown":[14],"by":[15],"metal":[16],"organic":[17],"chemical":[18],"vapor":[19],"deposition":[20,41,54],"at":[21],"350\u2013550\u00b0C.":[22],"Nanometer-scale":[23],"nuclei":[26,48],"were":[27],"identified":[28],"from":[29],"all":[30],"the":[31,44,47,53,59,73,76],"films.":[33],"The":[34],"nucleus":[35],"density":[36],"exponentially":[37],"increased":[38],"with":[39,72],"increasing":[40],"temperature,":[42],"but":[43],"diameter":[45],"of":[46,61,75],"did":[49],"not":[50],"depend":[51],"on":[52],"temperature.":[55],"propose":[57],"that":[58],"crystallization":[60],"film":[64],"during":[65],"growth":[66],"proceeds":[67],"patchwork":[70],"increase":[74],"nuclei.":[79]},"counts_by_year":[{"year":2021,"cited_by_count":8},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":5},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":3},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":2}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}