{"id":"https://openalex.org/W2004874852","doi":"https://doi.org/10.1116/1.1458953","title":"Optimum B+ implantation conditions for the edge termination of the Au/n-Si Schottky diodes","display_name":"Optimum B+ implantation conditions for the edge termination of the Au/n-Si Schottky diodes","publication_year":2002,"publication_date":"2002-03-01","ids":{"openalex":"https://openalex.org/W2004874852","doi":"https://doi.org/10.1116/1.1458953","mag":"2004874852"},"language":"en","primary_location":{"id":"doi:10.1116/1.1458953","doi":"https://doi.org/10.1116/1.1458953","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.1458953","pdf_url":null,"source":{"id":"https://openalex.org/S4210169477","display_name":"Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena","issn_l":"1071-1023","issn":["1071-1023","1520-8567"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","poland-70"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103526637","display_name":"C. S. Choi","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"C. S. Choi","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Yonsei University, Seoul\u2009120-749, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Yonsei University, Seoul\u2009120-749, Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101781672","display_name":"Woo\u2010Young Choi","orcid":"https://orcid.org/0000-0003-0067-4657","observed_orcids":["https://orcid.org/0000-0003-0067-4657","https://orcid.org/0000-0001-6844-6613","https://orcid.org/0000-0002-4433-3013","https://orcid.org/0000-0002-6797-0154"]},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"W. Y. Choi","raw_affiliation_strings":["Department of Electrical and Electronic Engineering, Yonsei University, Seoul\u2009120-749, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Electronic Engineering, Yonsei University, Seoul\u2009120-749, Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109271555","display_name":"Minho Joo","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"M. H. Joo","raw_affiliation_strings":["Department of Physics, Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056586583","display_name":"Jee-Hun Song","orcid":"https://orcid.org/0000-0003-0718-137X","observed_orcids":["https://orcid.org/0000-0003-0718-137X"]},"institutions":[{"id":"https://openalex.org/I58716616","display_name":"Korea Institute of Science and Technology","ror":"https://ror.org/05kzfa883","country_code":"KR","type":"facility","lineage":["https://openalex.org/I27494661","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098","https://openalex.org/I58716616"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"J. H. Song","raw_affiliation_strings":["Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 130-650, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 130-650, Korea","institution_ids":["https://openalex.org/I58716616"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5026332374","display_name":"Seongil Im","orcid":"https://orcid.org/0000-0002-7993-0715","observed_orcids":["https://orcid.org/0000-0002-7993-0715","https://orcid.org/0000-0003-0723-5075"]},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"S. Im","raw_affiliation_strings":["Department of Physics, Institute of Physics and Applied Physics, Yonsei University, Seoul\u2009120-749, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Physics, Institute of Physics and Applied Physics, Yonsei University, Seoul\u2009120-749, Korea","institution_ids":["https://openalex.org/I193775966"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.4367,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.57405751,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":92},"biblio":{"volume":"20","issue":"2","first_page":"613","last_page":"617"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9829000234603882,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9829000234603882,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.009100000374019146,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.0015999999595806003,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/schottky-diodes","display_name":"Schottky diodes","score":0.8889999985694885},{"id":"https://openalex.org/keywords/edge-termination","display_name":"edge termination","score":0.7480000257492065},{"id":"https://openalex.org/keywords/boron-implantation","display_name":"boron implantation","score":0.9959999918937683},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"breakdown voltage","score":0.9649999737739563},{"id":"https://openalex.org/keywords/implantation-dose","display_name":"implantation dose","score":0.9020000100135803},{"id":"https://openalex.org/keywords/implantation-energy","display_name":"implantation energy","score":0.8970000147819519},{"id":"https://openalex.org/keywords/leakage-current","display_name":"leakage current","score":0.7739999890327454},{"id":"https://openalex.org/keywords/deep-level-defects","display_name":"deep levels","score":0.9819999933242798},{"id":"https://openalex.org/keywords/two-dimensional-simulation","display_name":"two-dimensional simulation","score":0.6140000224113464}],"concepts":[{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.8919057846069336},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.7869802117347717},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7090649604797363},{"id":"https://openalex.org/C41823505","wikidata":"https://www.wikidata.org/wiki/Q1436752","display_name":"Ion implantation","level":3,"score":0.6477296352386475},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6045042276382446},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.5968866348266602},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.580592155456543},{"id":"https://openalex.org/C20615193","wikidata":"https://www.wikidata.org/wiki/Q2309288","display_name":"Reverse leakage current","level":4,"score":0.5305317640304565},{"id":"https://openalex.org/C162307627","wikidata":"https://www.wikidata.org/wiki/Q204833","display_name":"Enhanced Data Rates for GSM Evolution","level":2,"score":0.5277286767959595},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.493224561214447},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.46407297253608704},{"id":"https://openalex.org/C501308230","wikidata":"https://www.wikidata.org/wiki/Q618","display_name":"Boron","level":2,"score":0.44019991159439087},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.435939759016037},{"id":"https://openalex.org/C184779094","wikidata":"https://www.wikidata.org/wiki/Q26383","display_name":"Atomic physics","level":1,"score":0.3952085077762604},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3748879134654999},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2054457664489746},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.19238725304603577},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11024439334869385},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.042386025190353394},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1116/1.1458953","doi":"https://doi.org/10.1116/1.1458953","is_oa":false,"landing_page_url":"https://doi.org/10.1116/1.1458953","pdf_url":null,"source":{"id":"https://openalex.org/S4210169477","display_name":"Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena","issn_l":"1071-1023","issn":["1071-1023","1520-8567"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","poland-70"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321314","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1977920155","https://openalex.org/W1998370272","https://openalex.org/W2001448679","https://openalex.org/W2005201260","https://openalex.org/W2102665688","https://openalex.org/W2104796983","https://openalex.org/W2111643244","https://openalex.org/W2145757162","https://openalex.org/W2150066843","https://openalex.org/W2158821958","https://openalex.org/W2168579821"],"related_works":["https://openalex.org/W2001448679","https://openalex.org/W2005201260","https://openalex.org/W2908399267","https://openalex.org/W2003553382","https://openalex.org/W2918129396","https://openalex.org/W2103903091","https://openalex.org/W1978643172","https://openalex.org/W2319491672","https://openalex.org/W4399164593","https://openalex.org/W2103338478"],"abstract_inverted_index":{"Boron":[0],"ion":[1,35,64,137],"implantation":[2,74],"for":[3],"edge":[4,54,77],"termination":[5,55,78],"was":[6],"performed":[7],"as":[8],"a":[9],"simple":[10],"technique":[11],"to":[12,69,130],"improve":[13],"the":[14,34,45,52,71,80,89,100,108,115,125,131,146,151,159,164],"breakdown":[15,102,117,148],"characteristics":[16],"in":[17,79,150],"Au/n-Si":[18],"Schottky":[19,41,81],"diodes.":[20,82],"Four":[21],"doses":[22],"of":[23,37,47,73,104],"1\u00d71013,":[24],"1\u00d71014,":[25],"1\u00d71015,":[26],"and":[27,61],"1\u00d71016":[28],"B":[29,49,94],"cm\u22122":[30,50,95],"were":[31,66],"implanted":[32,43,91,153],"at":[33,96,111,118,124,154],"energy":[36],"30":[38,97],"keV.":[39],"The":[40,83],"diode":[42,90,109,152],"with":[44,92],"dose":[46],"1\u00d71013":[48,93],"shows":[51],"best":[53],"characteristics.":[56],"In":[57],"addition,":[58],"20,":[59],"40,":[60],"50":[62],"keV":[63,98,113,156],"energies":[65,75],"also":[67],"adopted":[68],"investigate":[70],"influences":[72],"on":[76],"current\u2013voltage":[84],"measurement":[85],"results":[86],"show":[87],"that":[88,145],"has":[99,114],"highest":[101],"voltage":[103],"386":[105],"V":[106],"while":[107],"treated":[110],"20":[112,155],"abrupt":[116],"only":[119],"150":[120],"V.":[121],"Leakage":[122],"currents":[123],"reverse":[126],"bias":[127],"are":[128],"attributed":[129],"deep":[132],"level":[133],"defects":[134],"introduced":[135],"by":[136],"implantation.":[138],"Using":[139],"two-dimensional":[140],"simulation,":[141],"it":[142],"is":[143],"verified":[144],"anomalous":[147],"phenomena":[149],"result":[157],"from":[158],"high":[160],"electric":[161],"field":[162],"near":[163],"Au":[165],"contact":[166],"edge.":[167]},"counts_by_year":[{"year":2021,"cited_by_count":1}],"updated_date":"2026-10-16T09:59:22.235173","created_date":"2016-06-24T00:00:00"}