{"id":"https://openalex.org/W2004697100","doi":"https://doi.org/10.1063/1.1609051","title":"Strained silicon on SiGe: Temperature dependence of carrier effective masses","display_name":"Strained silicon on SiGe: Temperature dependence of carrier effective masses","publication_year":2003,"publication_date":"2003-10-03","ids":{"openalex":"https://openalex.org/W2004697100","doi":"https://doi.org/10.1063/1.1609051","mag":"2004697100"},"language":"en","primary_location":{"id":"doi:10.1063/1.1609051","doi":"https://doi.org/10.1063/1.1609051","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1609051","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5085248412","display_name":"Soline Boyer\u2010Richard","orcid":"https://orcid.org/0000-0002-0880-0999","observed_orcids":["https://orcid.org/0000-0002-0880-0999"]},"institutions":[{"id":"https://openalex.org/I102197404","display_name":"Universit\u00e9 Paris-Sud","ror":"https://ror.org/028rypz17","country_code":"FR","type":"education","lineage":["https://openalex.org/I102197404","https://openalex.org/I277688954"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Soline Richard","raw_affiliation_strings":["Institut d\u2019\u00c9lectronique Fondamentale, UMR 8622 CNRS, Universit\u00e9 Paris Sud, 91405\u2009Orsay Cedex, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut d\u2019\u00c9lectronique Fondamentale, UMR 8622 CNRS, Universit\u00e9 Paris Sud, 91405\u2009Orsay Cedex, France","institution_ids":["https://openalex.org/I102197404","https://openalex.org/I1294671590"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040809398","display_name":"Nicolas Cavassilas","orcid":"https://orcid.org/0000-0002-1329-8438","observed_orcids":["https://orcid.org/0000-0002-1329-8438"]},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I4210142713","display_name":"Institut de Recherche sur les Ph\u00e9nom\u00e8nes Hors \u00c9quilibre","ror":"https://ror.org/03zq0xc17","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I21491767","https://openalex.org/I4210095849","https://openalex.org/I4210142713","https://openalex.org/I4210142724"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Nicolas Cavassilas","raw_affiliation_strings":["Laboratoire Mat\u00e9riaux et Micro\u00e9lectronique de Provence, UMR 6137 CNRS, B\u00e2timent IRPHE, 49, rue Joliot-Curie, Bo\u0131\u0302te Postale 146, 13384\u2009Marseille, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire Mat\u00e9riaux et Micro\u00e9lectronique de Provence, UMR 6137 CNRS, B\u00e2timent IRPHE, 49, rue Joliot-Curie, Bo\u0131\u0302te Postale 146, 13384\u2009Marseille, France","institution_ids":["https://openalex.org/I1294671590","https://openalex.org/I4210142713"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113476187","display_name":"F. Aniel","orcid":"https://orcid.org/0009-0003-3620-8022","observed_orcids":["https://orcid.org/0009-0003-3620-8022"]},"institutions":[{"id":"https://openalex.org/I102197404","display_name":"Universit\u00e9 Paris-Sud","ror":"https://ror.org/028rypz17","country_code":"FR","type":"education","lineage":["https://openalex.org/I102197404","https://openalex.org/I277688954"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Fr\u00e9d\u00e9ric Aniel","raw_affiliation_strings":["Institut d\u2019\u00c9lectronique Fondamentale, UMR 8622 CNRS, Universit\u00e9 Paris Sud, 91405\u2009Orsay Cedex, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut d\u2019\u00c9lectronique Fondamentale, UMR 8622 CNRS, Universit\u00e9 Paris Sud, 91405\u2009Orsay Cedex, France","institution_ids":["https://openalex.org/I102197404","https://openalex.org/I1294671590"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5059874980","display_name":"G. Fishman","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I102197404","display_name":"Universit\u00e9 Paris-Sud","ror":"https://ror.org/028rypz17","country_code":"FR","type":"education","lineage":["https://openalex.org/I102197404","https://openalex.org/I277688954"]},{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Guy Fishman","raw_affiliation_strings":["Institut d\u2019\u00c9lectronique Fondamentale, UMR 8622 CNRS, Universit\u00e9 Paris Sud, 91405\u2009Orsay Cedex, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut d\u2019\u00c9lectronique Fondamentale, UMR 8622 CNRS, Universit\u00e9 Paris Sud, 91405\u2009Orsay Cedex, France","institution_ids":["https://openalex.org/I102197404","https://openalex.org/I1294671590"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":3500,"currency":"USD","value_usd":3500},"apc_paid":null,"fwci":2.0075,"has_fulltext":false,"cited_by_count":32,"citation_normalized_percentile":{"value":0.8594265,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"94","issue":"8","first_page":"5088","last_page":"5094"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9442999958992004,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9442999958992004,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.022299999371170998,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.013199999928474426,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/strained-silicon","display_name":"strained silicon","score":0.9580000042915344},{"id":"https://openalex.org/keywords/sige","display_name":"SiGe","score":0.675000011920929},{"id":"https://openalex.org/keywords/carrier-effective-mass","display_name":"carrier effective mass","score":0.7039999961853027},{"id":"https://openalex.org/keywords/temperature-dependence","display_name":"temperature dependence","score":0.9800000190734863},{"id":"https://openalex.org/keywords/kp-hamiltonian","display_name":"k\u00b7p Hamiltonian","score":0.8769999742507935},{"id":"https://openalex.org/keywords/valence-band","display_name":"valence band","score":0.8050000071525574},{"id":"https://openalex.org/keywords/conduction-band","display_name":"conduction band","score":0.9300000071525574},{"id":"https://openalex.org/keywords/density-of-states","display_name":"density of states","score":0.75},{"id":"https://openalex.org/keywords/electron-effective-mass","display_name":"electron effective mass","score":0.8500000238418579},{"id":"https://openalex.org/keywords/hole-effective-mass","display_name":"hole effective mass","score":0.949999988079071},{"id":"https://openalex.org/keywords/band-structure","display_name":"electronic band structure","score":0.42899999022483826}],"concepts":[{"id":"https://openalex.org/C179764930","wikidata":"https://www.wikidata.org/wiki/Q3509437","display_name":"Effective mass (spring\u2013mass system)","level":2,"score":0.8144240379333496},{"id":"https://openalex.org/C16291881","wikidata":"https://www.wikidata.org/wiki/Q917246","display_name":"Brillouin zone","level":2,"score":0.7826794981956482},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.6754502058029175},{"id":"https://openalex.org/C130787639","wikidata":"https://www.wikidata.org/wiki/Q5645293","display_name":"Hamiltonian (control theory)","level":2,"score":0.6732076406478882},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.643494725227356},{"id":"https://openalex.org/C27067764","wikidata":"https://www.wikidata.org/wiki/Q528769","display_name":"Conduction band","level":3,"score":0.6129173636436462},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.5537706613540649},{"id":"https://openalex.org/C125469278","wikidata":"https://www.wikidata.org/wiki/Q806380","display_name":"Electronic band structure","level":2,"score":0.5056769847869873},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.5019669532775879},{"id":"https://openalex.org/C192245399","wikidata":"https://www.wikidata.org/wiki/Q772250","display_name":"Strained silicon","level":5,"score":0.49858689308166504},{"id":"https://openalex.org/C193154288","wikidata":"https://www.wikidata.org/wiki/Q959336","display_name":"Direct and indirect band gaps","level":3,"score":0.49121659994125366},{"id":"https://openalex.org/C177909632","wikidata":"https://www.wikidata.org/wiki/Q2033925","display_name":"Semimetal","level":3,"score":0.48413142561912537},{"id":"https://openalex.org/C103272658","wikidata":"https://www.wikidata.org/wiki/Q528769","display_name":"Valence band","level":3,"score":0.45981794595718384},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4383653402328491},{"id":"https://openalex.org/C172100665","wikidata":"https://www.wikidata.org/wiki/Q7465774","display_name":"Thermal conduction","level":2,"score":0.42737337946891785},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.33509328961372375},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.14933452010154724},{"id":"https://openalex.org/C2779667780","wikidata":"https://www.wikidata.org/wiki/Q18206302","display_name":"Crystalline silicon","level":3,"score":0.13302043080329895},{"id":"https://openalex.org/C2776390347","wikidata":"https://www.wikidata.org/wiki/Q474163","display_name":"Amorphous silicon","level":4,"score":0.13082504272460938},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.10916787385940552},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C126255220","wikidata":"https://www.wikidata.org/wiki/Q141495","display_name":"Mathematical optimization","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1063/1.1609051","doi":"https://doi.org/10.1063/1.1609051","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.1609051","pdf_url":null,"source":{"id":"https://openalex.org/S187991544","display_name":"Journal of Applied Physics","issn_l":"0021-8979","issn":["0021-8979","1089-7550","1520-8850"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-d","jufo-1","norway-1","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Applied Physics","raw_type":"journal-article"},{"id":"pmh:oai:HAL:hal-05788346v1","doi":null,"is_oa":false,"landing_page_url":"https://hal.science/hal-05788346","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"listed_in":[],"host_organization":"https://openalex.org/I4405252976","host_organization_name":"Centre pour la Communication Scientifique Directe","host_organization_lineage":["https://openalex.org/I4405252976"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Journal of Applied Physics, 2003, 94 (8), pp.5088-5094. &#x27E8;10.1063/1.1609051&#x27E9;","raw_type":"info:eu-repo/semantics/article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W612876017","https://openalex.org/W1973955035","https://openalex.org/W1981014604","https://openalex.org/W1985131633","https://openalex.org/W1986614795","https://openalex.org/W1989894508","https://openalex.org/W1994350206","https://openalex.org/W1996147850","https://openalex.org/W2017791889","https://openalex.org/W2020267538","https://openalex.org/W2036539754","https://openalex.org/W2041492467","https://openalex.org/W2048366991","https://openalex.org/W2053868910","https://openalex.org/W2064573497","https://openalex.org/W2066282224","https://openalex.org/W2067207748","https://openalex.org/W2067964641","https://openalex.org/W2120112011","https://openalex.org/W2229776599","https://openalex.org/W4233269862"],"related_works":["https://openalex.org/W2061318436","https://openalex.org/W2029075499","https://openalex.org/W2031011322","https://openalex.org/W1670483784","https://openalex.org/W2025409383","https://openalex.org/W2055751181","https://openalex.org/W1442439817","https://openalex.org/W2048366991","https://openalex.org/W2146945662","https://openalex.org/W1991669620"],"abstract_inverted_index":{"A":[0],"strain":[1],"Bir\u2013Pikus":[2],"Hamiltonian":[3,12],"Hst,":[4],"based":[5],"on":[6],"a":[7],"20":[8],"band":[9,20],"sps*":[10],"k\u22c5p":[11,34],"Hkp,":[13],"is":[14,41],"used":[15,42],"to":[16,43,60,74],"describe":[17],"the":[18,22,28,37],"valence":[19],"and":[21,46],"first":[23,75],"two":[24],"conduction":[25],"bands":[26],"over":[27],"entire":[29],"Brillouin":[30],"zone.":[31],"This":[32],"full-band":[33],"computation":[35],"of":[36,55],"carrier":[38],"dispersion":[39],"relation":[40],"calculate":[44],"electron":[45,66],"hole":[47],"effective":[48,67],"masses":[49,57,68],"in":[50],"strained":[51],"silicon.":[52],"Hole":[53],"density":[54],"states":[56],"are":[58],"found":[59],"be":[61,70],"very":[62],"temperature":[63,72],"dependent":[64],"whereas":[65],"can":[69],"considered":[71],"independent":[73],"order.":[76]},"counts_by_year":[{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":3},{"year":2012,"cited_by_count":1}],"updated_date":"2026-10-25T09:29:13.331239","created_date":"2016-06-24T00:00:00"}
