{"id":"https://openalex.org/W2004375331","doi":"https://doi.org/10.1063/1.97943","title":"Defect structure of epitaxial CdTe layers grown on {100} and {111}B GaAs and on {111}B CdTe by metalorganic chemical vapor deposition","display_name":"Defect structure of epitaxial CdTe layers grown on {100} and {111}B GaAs and on {111}B CdTe by metalorganic chemical vapor deposition","publication_year":1987,"publication_date":"1987-04-27","ids":{"openalex":"https://openalex.org/W2004375331","doi":"https://doi.org/10.1063/1.97943","mag":"2004375331"},"language":"en","primary_location":{"id":"doi:10.1063/1.97943","doi":"https://doi.org/10.1063/1.97943","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.97943","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"},"volume":null,"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5077191342","display_name":"Paul D. Brown","orcid":"https://orcid.org/0000-0002-1911-5225","observed_orcids":["https://orcid.org/0000-0002-1911-5225"]},"institutions":[{"id":"https://openalex.org/I190082696","display_name":"Durham University","ror":"https://ror.org/01v29qb04","country_code":"GB","type":"education","lineage":["https://openalex.org/I190082696"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"P. D. Brown","raw_affiliation_strings":["Department of Applied Physics and Electronics, University of Durham, South Road, Durham, DH1 3LE United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Applied Physics and Electronics, University of Durham, South Road, Durham, DH1 3LE United Kingdom","institution_ids":["https://openalex.org/I190082696"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025786521","display_name":"Janet E. Hails","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I190082696","display_name":"Durham University","ror":"https://ror.org/01v29qb04","country_code":"GB","type":"education","lineage":["https://openalex.org/I190082696"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"J. E. Hails","raw_affiliation_strings":["Department of Applied Physics and Electronics, University of Durham, South Road, Durham, DH1 3LE United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Applied Physics and Electronics, University of Durham, South Road, Durham, DH1 3LE United Kingdom","institution_ids":["https://openalex.org/I190082696"]}]},{"author_position":"middle","author":{"id":null,"display_name":"G. J. Russell","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I190082696","display_name":"Durham University","ror":"https://ror.org/01v29qb04","country_code":"GB","type":"education","lineage":["https://openalex.org/I190082696"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"G. J. Russell","raw_affiliation_strings":["Department of Applied Physics and Electronics, University of Durham, South Road, Durham, DH1 3LE United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Applied Physics and Electronics, University of Durham, South Road, Durham, DH1 3LE United Kingdom","institution_ids":["https://openalex.org/I190082696"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5076553166","display_name":"J. Woods","orcid":"https://orcid.org/0000-0001-8661-4844","observed_orcids":["https://orcid.org/0000-0001-8661-4844"]},"institutions":[{"id":"https://openalex.org/I190082696","display_name":"Durham University","ror":"https://ror.org/01v29qb04","country_code":"GB","type":"education","lineage":["https://openalex.org/I190082696"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"J. Woods","raw_affiliation_strings":["Department of Applied Physics and Electronics, University of Durham, South Road, Durham, DH1 3LE United Kingdom"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Applied Physics and Electronics, University of Durham, South Road, Durham, DH1 3LE United Kingdom","institution_ids":["https://openalex.org/I190082696"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I190082696"],"apc_list":null,"apc_paid":null,"fwci":10.8026,"has_fulltext":false,"cited_by_count":50,"citation_normalized_percentile":{"value":0.9885305,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"50","issue":"17","first_page":"1144","last_page":"1145"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.9340999722480774,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.9340999722480774,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.04230000078678131,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10590","display_name":"Chalcogenide Semiconductor Thin Films","score":0.01489999983459711,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/misfit-dislocations","display_name":"misfit dislocations","score":0.9129999876022339},{"id":"https://openalex.org/keywords/epitaxial-orientation","display_name":"epitaxial orientation","score":0.6809999942779541},{"id":"https://openalex.org/keywords/homoepitaxy","display_name":"homoepitaxy","score":0.8840000033378601},{"id":"https://openalex.org/keywords/lattice-mismatch","display_name":"lattice mismatch","score":0.6460000276565552},{"id":"https://openalex.org/keywords/metal-organic-chemical-vapor-deposition","display_name":"metalorganic chemical vapor deposition","score":0.7570000290870667},{"id":"https://openalex.org/keywords/structural-defects","display_name":"structural defects","score":0.4749999940395355}],"concepts":[{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.7811128497123718},{"id":"https://openalex.org/C6110044","wikidata":"https://www.wikidata.org/wiki/Q4118086","display_name":"Cadmium telluride photovoltaics","level":2,"score":0.7623075842857361},{"id":"https://openalex.org/C6840138","wikidata":"https://www.wikidata.org/wiki/Q109856","display_name":"Crystal twinning","level":3,"score":0.686231255531311},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6497633457183838},{"id":"https://openalex.org/C136301237","wikidata":"https://www.wikidata.org/wiki/Q3247568","display_name":"Lamella (surface anatomy)","level":2,"score":0.6403444409370422},{"id":"https://openalex.org/C57410435","wikidata":"https://www.wikidata.org/wiki/Q505668","display_name":"Chemical vapor deposition","level":2,"score":0.6349731087684631},{"id":"https://openalex.org/C146088050","wikidata":"https://www.wikidata.org/wiki/Q744818","display_name":"Transmission electron microscopy","level":2,"score":0.6171282529830933},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.5813462734222412},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3373376131057739},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.23855504393577576},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.22245126962661743},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1606416404247284},{"id":"https://openalex.org/C87976508","wikidata":"https://www.wikidata.org/wiki/Q1498213","display_name":"Microstructure","level":2,"score":0.146330326795578},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.05923038721084595}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1063/1.97943","doi":"https://doi.org/10.1063/1.97943","is_oa":false,"landing_page_url":"https://doi.org/10.1063/1.97943","pdf_url":null,"source":{"id":"https://openalex.org/S105243760","display_name":"Applied Physics Letters","issn_l":"0003-6951","issn":["0003-6951","1077-3118","1520-8842"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-a","jufo-3","ki-jl-1","norway-2","poland-100","russia-white-list-1","vabb-shw"],"host_organization":"https://openalex.org/P4310320257","host_organization_name":"American Institute of Physics","host_organization_lineage":["https://openalex.org/P4310320257"],"host_organization_lineage_names":["American Institute of Physics"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Applied Physics Letters","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1966628713","https://openalex.org/W1974818474","https://openalex.org/W1981301687","https://openalex.org/W1987949886","https://openalex.org/W2011946464","https://openalex.org/W2042328393","https://openalex.org/W2051253403","https://openalex.org/W2069928140","https://openalex.org/W2073235673","https://openalex.org/W2147181490"],"related_works":["https://openalex.org/W1978202619","https://openalex.org/W2237598905","https://openalex.org/W2036270400","https://openalex.org/W2073803817","https://openalex.org/W1967192713","https://openalex.org/W2084010608","https://openalex.org/W1992353644","https://openalex.org/W2021826664","https://openalex.org/W2089889634","https://openalex.org/W2023956320"],"abstract_inverted_index":{"The":[0,119],"technique":[1],"of":[2,15,44,53,88,105,113,121,131],"cross-sectional":[3],"transmission":[4],"electron":[5],"microscopy":[6],"has":[7],"been":[8],"used":[9],"to":[10,42,61,74],"investigate":[11],"the":[12,62,83,92,97,129],"defect":[13],"content":[14],"epitaxial":[16],"CdTe":[17,28,143],"layers":[18,43,66,114],"grown":[19,67,115,126],"on":[20,26,35,68,116],"{100}":[21,69,77],"and":[22,25,47,103],"{111}B":[23,27,142],"GaAs":[24,70],"by":[29],"metalorganic":[30],"chemical":[31],"vapor":[32],"deposition.":[33],"Growth":[34],"{111}":[36,45,79,117],"oriented":[37],"substrates":[38,71],"invaribly":[39],"gave":[40],"rise":[41],"orientation":[46,99],"these":[48,122],"contained":[49,86],"a":[50,101,146],"large":[51],"number":[52],"thin":[54],"(100\u20131000":[55],"\u00c5)":[56],"lamella":[57,106],"twins":[58,107],"lying":[59],"parallel":[60],"interface.":[63],"In":[64],"contrast,":[65],"were":[72,109],"found":[73],"exhibit":[75],"either":[76],"or":[78],"orientation.":[80],"Epilayers":[81],"with":[82,96,111],"former":[84],"alignment":[85],"arrays":[87],"misfit":[89],"dislocations":[90],"at":[91],"interface,":[93],"whereas":[94],"those":[95,112],"latter":[98],"exhibited":[100],"density":[102],"distribution":[104],"which":[108],"comparable":[110],"substrates.":[118],"presence":[120],"defects":[123],"in":[124,141],"homoepitaxially":[125],"CdTe,":[127],"where":[128],"effects":[130],"lattice":[132],"mismatch":[133],"do":[134],"not":[135],"arise,":[136],"clearly":[137],"indicates":[138],"that":[139],"twinning":[140],"epilayers":[144],"is":[145],"growth":[147],"phenomenon.":[148]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2016,"cited_by_count":1}],"updated_date":"2026-10-12T09:40:04.860316","created_date":"2016-06-24T00:00:00"}