{"id":"https://openalex.org/W2004287385","doi":"https://doi.org/10.1016/j.nimb.2009.10.177","title":"Effect of antimony incorporation on structural properties of CuInS2 crystals","display_name":"Effect of antimony incorporation on structural properties of CuInS2 crystals","publication_year":2009,"publication_date":"2009-10-16","ids":{"openalex":"https://openalex.org/W2004287385","doi":"https://doi.org/10.1016/j.nimb.2009.10.177","mag":"2004287385"},"language":"en","primary_location":{"id":"doi:10.1016/j.nimb.2009.10.177","doi":"https://doi.org/10.1016/j.nimb.2009.10.177","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.nimb.2009.10.177","pdf_url":null,"source":{"id":"https://openalex.org/S113542562","display_name":"Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms","issn_l":"0168-583X","issn":["0168-583X","1872-9584"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-2","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","raw_type":"journal-article"},"parent_works":[],"lineage":["https://openalex.org/W2004287385"],"child_works_count":0,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5048536335","display_name":"Mohamed Ben Rabeh","orcid":"https://orcid.org/0000-0002-1341-0274","observed_orcids":["https://orcid.org/0000-0002-1341-0274"]},"institutions":[{"id":"https://openalex.org/I4210131288","display_name":"National Engineering School of Tunis","ror":"https://ror.org/03b1zjt31","country_code":"TN","type":"education","lineage":["https://openalex.org/I4210131288","https://openalex.org/I63596082"]}],"countries":["TN"],"is_corresponding":true,"raw_author_name":"M. Ben Rabeh","raw_affiliation_strings":["Laboratoire de Photovolta\u00efque et Mat\u00e9riaux Semi-Conducteurs \u2013 ENIT BP 37, Le belv\u00e9d\u00e8re, 1002 Tunis, Tunisia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire de Photovolta\u00efque et Mat\u00e9riaux Semi-Conducteurs \u2013 ENIT BP 37, Le belv\u00e9d\u00e8re, 1002 Tunis, Tunisia","institution_ids":["https://openalex.org/I4210131288"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014535952","display_name":"N. Chaglabou","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210131288","display_name":"National Engineering School of Tunis","ror":"https://ror.org/03b1zjt31","country_code":"TN","type":"education","lineage":["https://openalex.org/I4210131288","https://openalex.org/I63596082"]}],"countries":["TN"],"is_corresponding":false,"raw_author_name":"N. Chaglabou","raw_affiliation_strings":["Laboratoire de Photovolta\u00efque et Mat\u00e9riaux Semi-Conducteurs \u2013 ENIT BP 37, Le belv\u00e9d\u00e8re, 1002 Tunis, Tunisia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire de Photovolta\u00efque et Mat\u00e9riaux Semi-Conducteurs \u2013 ENIT BP 37, Le belv\u00e9d\u00e8re, 1002 Tunis, Tunisia","institution_ids":["https://openalex.org/I4210131288"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5019652427","display_name":"M. Kanzari","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210131288","display_name":"National Engineering School of Tunis","ror":"https://ror.org/03b1zjt31","country_code":"TN","type":"education","lineage":["https://openalex.org/I4210131288","https://openalex.org/I63596082"]}],"countries":["TN"],"is_corresponding":false,"raw_author_name":"M. Kanzari","raw_affiliation_strings":["Laboratoire de Photovolta\u00efque et Mat\u00e9riaux Semi-Conducteurs \u2013 ENIT BP 37, Le belv\u00e9d\u00e8re, 1002 Tunis, Tunisia"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratoire de Photovolta\u00efque et Mat\u00e9riaux Semi-Conducteurs \u2013 ENIT BP 37, Le belv\u00e9d\u00e8re, 1002 Tunis, Tunisia","institution_ids":["https://openalex.org/I4210131288"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5048536335"],"corresponding_institution_ids":["https://openalex.org/I4210131288"],"apc_list":{"value":2810,"currency":"USD","value_usd":2810},"apc_paid":null,"fwci":0.5056,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.68003917,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":97},"biblio":{"volume":"268","issue":"3-4","first_page":"273","last_page":"276"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10590","display_name":"Chalcogenide Semiconductor Thin Films","score":0.9872999787330627,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10590","display_name":"Chalcogenide Semiconductor Thin Films","score":0.9872999787330627,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11637","display_name":"Advanced Semiconductor Detectors and Materials","score":0.006800000090152025,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10939","display_name":"Crystal Structures and Properties","score":0.002899999963119626,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cuins2","display_name":"CuInS2","score":0.9890000224113464},{"id":"https://openalex.org/keywords/sb-doping","display_name":"antimony doping","score":0.9549999833106995},{"id":"https://openalex.org/keywords/single-crystal-growth","display_name":"single crystal growth","score":0.6930000185966492},{"id":"https://openalex.org/keywords/bridgman-growth","display_name":"Bridgman growth","score":0.8159999847412109},{"id":"https://openalex.org/keywords/crystallographic-texture","display_name":"crystallographic texture","score":0.7870000004768372},{"id":"https://openalex.org/keywords/acceptor-doping","display_name":"acceptor doping","score":0.7110000252723694},{"id":"https://openalex.org/keywords/photoluminescence","display_name":"photoluminescence","score":0.9240000247955322},{"id":"https://openalex.org/keywords/p-type-conductivity","display_name":"p-type conductivity","score":0.906000018119812}],"concepts":[{"id":"https://openalex.org/C541565711","wikidata":"https://www.wikidata.org/wiki/Q1099","display_name":"Antimony","level":2,"score":0.866401195526123},{"id":"https://openalex.org/C170751736","wikidata":"https://www.wikidata.org/wiki/Q503601","display_name":"Tetragonal crystal system","level":3,"score":0.7760049104690552},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.6476330161094666},{"id":"https://openalex.org/C543292547","wikidata":"https://www.wikidata.org/wiki/Q1094","display_name":"Indium","level":2,"score":0.5994015336036682},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5871402025222778},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5810660719871521},{"id":"https://openalex.org/C207114421","wikidata":"https://www.wikidata.org/wiki/Q133900","display_name":"Diffraction","level":2,"score":0.48043251037597656},{"id":"https://openalex.org/C2781285689","wikidata":"https://www.wikidata.org/wiki/Q21921428","display_name":"Crystal (programming language)","level":2,"score":0.4758436679840088},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.46413442492485046},{"id":"https://openalex.org/C26771246","wikidata":"https://www.wikidata.org/wiki/Q321095","display_name":"Scanning electron microscope","level":2,"score":0.42384085059165955},{"id":"https://openalex.org/C115624301","wikidata":"https://www.wikidata.org/wiki/Q895901","display_name":"Crystal structure","level":2,"score":0.4225160479545593},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.28388649225234985},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.11258578300476074},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.04153880476951599},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.nimb.2009.10.177","doi":"https://doi.org/10.1016/j.nimb.2009.10.177","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.nimb.2009.10.177","pdf_url":null,"source":{"id":"https://openalex.org/S113542562","display_name":"Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms","issn_l":"0168-583X","issn":["0168-583X","1872-9584"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-2","ki-jl-1","norway-1","poland-70","russia-white-list-2","vabb-shw"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":22,"referenced_works":["https://openalex.org/W374142109","https://openalex.org/W1620597804","https://openalex.org/W1644523840","https://openalex.org/W1969837233","https://openalex.org/W1970749214","https://openalex.org/W1978402509","https://openalex.org/W1987867322","https://openalex.org/W1997689992","https://openalex.org/W1997844519","https://openalex.org/W2001604706","https://openalex.org/W2008160198","https://openalex.org/W2009473945","https://openalex.org/W2015842003","https://openalex.org/W2039199010","https://openalex.org/W2049443716","https://openalex.org/W2050360873","https://openalex.org/W2068870326","https://openalex.org/W2072622105","https://openalex.org/W2086455582","https://openalex.org/W2090234689","https://openalex.org/W2092888578","https://openalex.org/W2332362420"],"related_works":["https://openalex.org/W2072622105","https://openalex.org/W2749288318","https://openalex.org/W2093974357","https://openalex.org/W2003098318","https://openalex.org/W2901410095","https://openalex.org/W1620597804","https://openalex.org/W2061399518","https://openalex.org/W2011928273","https://openalex.org/W2189246301","https://openalex.org/W1539301963"],"abstract_inverted_index":null,"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2015,"cited_by_count":3},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":2}],"updated_date":"2026-11-12T12:28:57.059296","created_date":"2016-06-24T00:00:00"}