{"id":"https://openalex.org/W2004168977","doi":"https://doi.org/10.1016/j.spmi.2012.02.005","title":"Novel carbon nanotube field effect transistor with graded double halo channel","display_name":"Novel carbon nanotube field effect transistor with graded double halo channel","publication_year":2012,"publication_date":"2012-02-14","ids":{"openalex":"https://openalex.org/W2004168977","doi":"https://doi.org/10.1016/j.spmi.2012.02.005","mag":"2004168977"},"language":"en","primary_location":{"id":"doi:10.1016/j.spmi.2012.02.005","doi":"https://doi.org/10.1016/j.spmi.2012.02.005","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.spmi.2012.02.005","pdf_url":null,"source":{"id":"https://openalex.org/S107898947","display_name":"Superlattices and Microstructures","issn_l":"0749-6036","issn":["0749-6036","1096-3677"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1","poland-20"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Superlattices and Microstructures","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103275545","display_name":"Ali Naderi","orcid":"https://orcid.org/0000-0002-7281-2150","observed_orcids":["https://orcid.org/0000-0002-7281-2150"]},"institutions":[{"id":"https://openalex.org/I928334797","display_name":"Semnan University","ror":"https://ror.org/029gksw03","country_code":"IR","type":"education","lineage":["https://openalex.org/I928334797"]}],"countries":["IR"],"is_corresponding":true,"raw_author_name":"Ali Naderi","raw_affiliation_strings":["Electrical Engineering Department, Semnan University, Semnan, Iran"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical Engineering Department, Semnan University, Semnan, Iran","institution_ids":["https://openalex.org/I928334797"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5046499166","display_name":"Parviz Keshavarzi","orcid":"https://orcid.org/0000-0002-3223-742X","observed_orcids":["https://orcid.org/0000-0002-3223-742X"]},"institutions":[{"id":"https://openalex.org/I928334797","display_name":"Semnan University","ror":"https://ror.org/029gksw03","country_code":"IR","type":"education","lineage":["https://openalex.org/I928334797"]}],"countries":["IR"],"is_corresponding":false,"raw_author_name":"Parviz Keshavarzi","raw_affiliation_strings":["Electrical Engineering Department, Semnan University, Semnan, Iran"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electrical Engineering Department, Semnan University, Semnan, Iran","institution_ids":["https://openalex.org/I928334797"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5103275545"],"corresponding_institution_ids":["https://openalex.org/I928334797"],"apc_list":{"value":2550,"currency":"USD","value_usd":2550},"apc_paid":null,"fwci":1.7579,"has_fulltext":false,"cited_by_count":24,"citation_normalized_percentile":{"value":0.8451774,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":87,"max":98},"biblio":{"volume":"51","issue":"5","first_page":"668","last_page":"679"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9955999851226807,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9955999851226807,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.0010999999940395355,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10074","display_name":"Carbon Nanotubes in Composites","score":0.0005000000237487257,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/carbon-nanotube-field-effect-transistors","display_name":"carbon nanotube field-effect transistors","score":0.9980000257492065},{"id":"https://openalex.org/keywords/drain-induced-barrier-lowering","display_name":"drain-induced barrier lowering","score":0.9629999995231628},{"id":"https://openalex.org/keywords/graded-doping-profile","display_name":"graded doping profile","score":0.7120000123977661},{"id":"https://openalex.org/keywords/short-channel-effects","display_name":"short-channel effects","score":0.7229999899864197},{"id":"https://openalex.org/keywords/power-delay-product","display_name":"power-delay product","score":0.7870000004768372},{"id":"https://openalex.org/keywords/on-off-ratio","display_name":"on/off current ratio","score":0.7749999761581421}],"concepts":[{"id":"https://openalex.org/C184665706","wikidata":"https://www.wikidata.org/wiki/Q186310","display_name":"Halo","level":3,"score":0.7919327020645142},{"id":"https://openalex.org/C58916441","wikidata":"https://www.wikidata.org/wiki/Q1778563","display_name":"Carbon nanotube field-effect transistor","level":5,"score":0.7897974252700806},{"id":"https://openalex.org/C513720949","wikidata":"https://www.wikidata.org/wiki/Q1778729","display_name":"Carbon nanotube","level":2,"score":0.7591567039489746},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.715459942817688},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.6251335144042969},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.6035487651824951},{"id":"https://openalex.org/C154267886","wikidata":"https://www.wikidata.org/wiki/Q5037978","display_name":"Carbon nanotube quantum dot","level":4,"score":0.5872650742530823},{"id":"https://openalex.org/C2777619693","wikidata":"https://www.wikidata.org/wiki/Q539430","display_name":"Nanotube","level":3,"score":0.5743537545204163},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4891119599342346},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.4309011697769165},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.42410799860954285},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.14171501994132996},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.12856528162956238},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.09539511799812317},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C98444146","wikidata":"https://www.wikidata.org/wiki/Q318","display_name":"Galaxy","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.spmi.2012.02.005","doi":"https://doi.org/10.1016/j.spmi.2012.02.005","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.spmi.2012.02.005","pdf_url":null,"source":{"id":"https://openalex.org/S107898947","display_name":"Superlattices and Microstructures","issn_l":"0749-6036","issn":["0749-6036","1096-3677"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1","poland-20"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Superlattices and Microstructures","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":30,"referenced_works":["https://openalex.org/W32476254","https://openalex.org/W1482306278","https://openalex.org/W1646294624","https://openalex.org/W1970062820","https://openalex.org/W1979224914","https://openalex.org/W1988519318","https://openalex.org/W1994937123","https://openalex.org/W1998107126","https://openalex.org/W2007737299","https://openalex.org/W2018858346","https://openalex.org/W2018884651","https://openalex.org/W2039703452","https://openalex.org/W2043399112","https://openalex.org/W2043820815","https://openalex.org/W2043917332","https://openalex.org/W2055673935","https://openalex.org/W2057665591","https://openalex.org/W2085583951","https://openalex.org/W2091767459","https://openalex.org/W2113706824","https://openalex.org/W2125398680","https://openalex.org/W2144383902","https://openalex.org/W2146669227","https://openalex.org/W2148293531","https://openalex.org/W2166350871","https://openalex.org/W2542613239","https://openalex.org/W2548149450","https://openalex.org/W2787607414","https://openalex.org/W4291474432","https://openalex.org/W6684834498"],"related_works":["https://openalex.org/W1994937123","https://openalex.org/W2165413370","https://openalex.org/W1988519318","https://openalex.org/W3114129591","https://openalex.org/W2528692353","https://openalex.org/W2999464600","https://openalex.org/W2772911531","https://openalex.org/W2316752030","https://openalex.org/W2028761908","https://openalex.org/W2076263701"],"abstract_inverted_index":null,"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":5},{"year":2015,"cited_by_count":5},{"year":2014,"cited_by_count":2},{"year":2012,"cited_by_count":2}],"updated_date":"2026-11-04T10:54:05.112534","created_date":"2016-06-24T00:00:00"}