{"id":"https://openalex.org/W2004157914","doi":"https://doi.org/10.1016/s0022-0248(02)01753-0","title":"Some effects of oxygen impurities on AlN and GaN","display_name":"Some effects of oxygen impurities on AlN and GaN","publication_year":2002,"publication_date":"2002-11-11","ids":{"openalex":"https://openalex.org/W2004157914","doi":"https://doi.org/10.1016/s0022-0248(02)01753-0","mag":"2004157914"},"language":"en","primary_location":{"id":"doi:10.1016/s0022-0248(02)01753-0","doi":"https://doi.org/10.1016/s0022-0248(02)01753-0","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0022-0248(02)01753-0","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"},"volume":null,"type":"article","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111540196","display_name":"Glen A. Slack","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I165799507","display_name":"Rensselaer Polytechnic Institute","ror":"https://ror.org/01rtyzb94","country_code":"US","type":"education","lineage":["https://openalex.org/I165799507"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Glen A. Slack","raw_affiliation_strings":["Crystal IS, Inc., Latham, NY 12110, USA","Rensselaer Polytechnic Institute, Troy, NY 12180, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Crystal IS, Inc., Latham, NY 12110, USA","institution_ids":[]},{"raw_affiliation_string":"Rensselaer Polytechnic Institute, Troy, NY 12180, USA","institution_ids":["https://openalex.org/I165799507"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089184114","display_name":"LEO J. SCHOWALTER","orcid":"https://orcid.org/0000-0002-4854-8521","observed_orcids":["https://orcid.org/0000-0002-4854-8521"]},"institutions":[{"id":"https://openalex.org/I165799507","display_name":"Rensselaer Polytechnic Institute","ror":"https://ror.org/01rtyzb94","country_code":"US","type":"education","lineage":["https://openalex.org/I165799507"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Leo J. Schowalter","raw_affiliation_strings":["Crystal IS, Inc., Latham, NY 12110, USA","Rensselaer Polytechnic Institute, Troy, NY 12180, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Crystal IS, Inc., Latham, NY 12110, USA","institution_ids":[]},{"raw_affiliation_string":"Rensselaer Polytechnic Institute, Troy, NY 12180, USA","institution_ids":["https://openalex.org/I165799507"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033664254","display_name":"Donald T. Morelli","orcid":"https://orcid.org/0000-0002-4396-7516","observed_orcids":["https://orcid.org/0000-0002-4396-7516"]},"institutions":[{"id":"https://openalex.org/I126452172","display_name":"Aptiv (United States)","ror":"https://ror.org/02967gp58","country_code":"US","type":"company","lineage":["https://openalex.org/I126452172","https://openalex.org/I4210107152"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Donald Morelli","raw_affiliation_strings":["Delphi Research Laboratories, Shelby Township, MI 48315, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Delphi Research Laboratories, Shelby Township, MI 48315, USA","institution_ids":["https://openalex.org/I126452172"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5072605793","display_name":"Jaime A. Freitas","orcid":"https://orcid.org/0000-0001-6662-9109","observed_orcids":["https://orcid.org/0000-0001-6662-9109"]},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jaime A. Freitas","raw_affiliation_strings":["Naval Research Laboratory, Washington, DC 20375, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Naval Research Laboratory, Washington, DC 20375, USA","institution_ids":["https://openalex.org/I1288214837"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5089184114"],"corresponding_institution_ids":["https://openalex.org/I165799507"],"apc_list":{"value":3110,"currency":"USD","value_usd":3110},"apc_paid":null,"fwci":8.6915,"has_fulltext":false,"cited_by_count":420,"citation_normalized_percentile":{"value":0.98641513,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":99,"max":100},"biblio":{"volume":"246","issue":"3-4","first_page":"287","last_page":"298"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/oxygen-impurities","display_name":"oxygen impurities","score":0.968999981880188},{"id":"https://openalex.org/keywords/aluminum-nitride","display_name":"aluminum nitride","score":0.8550000190734863},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"gallium nitride","score":1.0},{"id":"https://openalex.org/keywords/substitutional-impurities","display_name":"substitutional impurities","score":0.9350000023841858},{"id":"https://openalex.org/keywords/luminescence","display_name":"luminescence","score":0.9539999961853027},{"id":"https://openalex.org/keywords/optical-absorption","display_name":"optical absorption","score":0.9990000128746033},{"id":"https://openalex.org/keywords/thermal-conductivity","display_name":"thermal conductivity","score":1.0},{"id":"https://openalex.org/keywords/crystal-defects","display_name":"crystal defects","score":0.7990000247955322}],"concepts":[{"id":"https://openalex.org/C3045981","wikidata":"https://www.wikidata.org/wiki/Q8039317","display_name":"Wurtzite crystal structure","level":3,"score":0.9361967444419861},{"id":"https://openalex.org/C71987851","wikidata":"https://www.wikidata.org/wiki/Q7216430","display_name":"Impurity","level":2,"score":0.8724321126937866},{"id":"https://openalex.org/C148869448","wikidata":"https://www.wikidata.org/wiki/Q184240","display_name":"Luminescence","level":2,"score":0.7658501267433167},{"id":"https://openalex.org/C540031477","wikidata":"https://www.wikidata.org/wiki/Q629","display_name":"Oxygen","level":2,"score":0.7035538554191589},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5893339514732361},{"id":"https://openalex.org/C125287762","wikidata":"https://www.wikidata.org/wiki/Q1758948","display_name":"Absorption (acoustics)","level":2,"score":0.5020675659179688},{"id":"https://openalex.org/C2781285689","wikidata":"https://www.wikidata.org/wiki/Q21921428","display_name":"Crystal (programming language)","level":2,"score":0.5009536743164062},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.46753308176994324},{"id":"https://openalex.org/C44280652","wikidata":"https://www.wikidata.org/wiki/Q104837","display_name":"Phase (matter)","level":2,"score":0.43853509426116943},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.37910473346710205},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.28324151039123535},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.22256794571876526},{"id":"https://openalex.org/C535196362","wikidata":"https://www.wikidata.org/wiki/Q758","display_name":"Zinc","level":2,"score":0.19824782013893127},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17736127972602844},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.1054610013961792},{"id":"https://openalex.org/C107872376","wikidata":"https://www.wikidata.org/wiki/Q321355","display_name":"Environmental chemistry","level":1,"score":0.06252896785736084},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0022-0248(02)01753-0","doi":"https://doi.org/10.1016/s0022-0248(02)01753-0","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0022-0248(02)01753-0","pdf_url":null,"source":{"id":"https://openalex.org/S10719676","display_name":"Journal of Crystal Growth","issn_l":"0022-0248","issn":["0022-0248","1873-5002"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["anvur-scientific","cwts-core","dongbi-b","jufo-1","ki-jl-1","norway-1","poland-70","russia-white-list-2"],"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Journal of Crystal Growth","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":56,"referenced_works":["https://openalex.org/W126983335","https://openalex.org/W205371034","https://openalex.org/W971766965","https://openalex.org/W1965904439","https://openalex.org/W1969842884","https://openalex.org/W1972999933","https://openalex.org/W1974011962","https://openalex.org/W1980442265","https://openalex.org/W1987332961","https://openalex.org/W1991873383","https://openalex.org/W1992590431","https://openalex.org/W2000882441","https://openalex.org/W2005750404","https://openalex.org/W2023095011","https://openalex.org/W2023919646","https://openalex.org/W2026278391","https://openalex.org/W2027197488","https://openalex.org/W2034233574","https://openalex.org/W2034794961","https://openalex.org/W2037063615","https://openalex.org/W2042431123","https://openalex.org/W2055668230","https://openalex.org/W2057237194","https://openalex.org/W2057653725","https://openalex.org/W2059310165","https://openalex.org/W2060017576","https://openalex.org/W2062970180","https://openalex.org/W2067637314","https://openalex.org/W2068665387","https://openalex.org/W2072329528","https://openalex.org/W2075570951","https://openalex.org/W2077243040","https://openalex.org/W2081196441","https://openalex.org/W2084647979","https://openalex.org/W2084915563","https://openalex.org/W2086077539","https://openalex.org/W2086892231","https://openalex.org/W2101267509","https://openalex.org/W2117407325","https://openalex.org/W2119392370","https://openalex.org/W2125109504","https://openalex.org/W2129178872","https://openalex.org/W2133351565","https://openalex.org/W2137560559","https://openalex.org/W2140847475","https://openalex.org/W2145505151","https://openalex.org/W2150575322","https://openalex.org/W2158236407","https://openalex.org/W2158483334","https://openalex.org/W2159725185","https://openalex.org/W2278340534","https://openalex.org/W2318179158","https://openalex.org/W2323600407","https://openalex.org/W2469179594","https://openalex.org/W2737044704","https://openalex.org/W4206639094"],"related_works":["https://openalex.org/W2904540240","https://openalex.org/W1967842346","https://openalex.org/W2016858325","https://openalex.org/W2009640489","https://openalex.org/W212789078","https://openalex.org/W2067637314","https://openalex.org/W181082219","https://openalex.org/W2137560559","https://openalex.org/W4309448141","https://openalex.org/W4223542815"],"abstract_inverted_index":null,"counts_by_year":[{"year":2026,"cited_by_count":13},{"year":2025,"cited_by_count":22},{"year":2024,"cited_by_count":24},{"year":2023,"cited_by_count":19},{"year":2022,"cited_by_count":16},{"year":2021,"cited_by_count":20},{"year":2020,"cited_by_count":20},{"year":2019,"cited_by_count":24},{"year":2018,"cited_by_count":19},{"year":2017,"cited_by_count":20},{"year":2016,"cited_by_count":14},{"year":2015,"cited_by_count":14},{"year":2014,"cited_by_count":17},{"year":2013,"cited_by_count":18},{"year":2012,"cited_by_count":18}],"updated_date":"2026-11-07T11:25:07.637180","created_date":"2016-06-24T00:00:00"}