{"id":"https://openalex.org/W2003751766","doi":"https://doi.org/10.1117/12.769591","title":"An ultra-narrow FinFET poly-Si gate structure fabricated with 193nm photolithography and in-situ PR/BARC and TEOS hard mask etching","display_name":"An ultra-narrow FinFET poly-Si gate structure fabricated with 193nm photolithography and in-situ PR/BARC and TEOS hard mask etching","publication_year":2008,"publication_date":"2008-03-11","ids":{"openalex":"https://openalex.org/W2003751766","doi":"https://doi.org/10.1117/12.769591","mag":"2003751766"},"language":"en","primary_location":{"id":"doi:10.1117/12.769591","doi":"https://doi.org/10.1117/12.769591","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.769591","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"},"volume":null,"type":"conference-paper","is_traditional":true,"indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5010983933","display_name":"Wen\u2010Shiang Liao","orcid":"https://orcid.org/0000-0002-5453-4134","observed_orcids":["https://orcid.org/0000-0002-5453-4134"]},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Wen-Shiang Liao","raw_affiliation_strings":["United Microelectronics Corp., Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"United Microelectronics Corp., Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065344819","display_name":"Cheng-Han Wu","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Cheng-Han Wu","raw_affiliation_strings":["United Microelectronics Corp., Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"United Microelectronics Corp., Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103430257","display_name":"Mao-Chyuan Tang","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Mao-Chyuan Tang","raw_affiliation_strings":["United Microelectronics Corp., Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"United Microelectronics Corp., Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101442842","display_name":"Shengyi Huang","orcid":"https://orcid.org/0000-0003-4986-1365","observed_orcids":["https://orcid.org/0000-0003-4986-1365"]},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Sheng-Yi Huang","raw_affiliation_strings":["United Microelectronics Corp., Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"United Microelectronics Corp., Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009289202","display_name":"Tommy Shih","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Tommy Shih","raw_affiliation_strings":["United Microelectronics Corp., Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"United Microelectronics Corp., Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111626373","display_name":"Yue-Gie Liaw","orcid":null,"observed_orcids":[]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yue-Gie Liaw","raw_affiliation_strings":["ASint Technology Corp. (United States)","ASint Technology Corp"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"ASint Technology Corp. (United States)","institution_ids":[]},{"raw_affiliation_string":"ASint Technology Corp","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103209031","display_name":"Kun\u2010Ming Chen","orcid":"https://orcid.org/0000-0002-2938-4250","observed_orcids":["https://orcid.org/0000-0002-2938-4250"]},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Kun-Ming Chen","raw_affiliation_strings":["National Nano Device Labs. (United States)","National Nano Device Labs"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Nano Device Labs. (United States)","institution_ids":[]},{"raw_affiliation_string":"National Nano Device Labs","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044983099","display_name":"Tung-Hung Chen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Tung-Hung Chen","raw_affiliation_strings":["United Microelectronics Corp., Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"United Microelectronics Corp., Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090910414","display_name":"Huan-Chiu Tsen","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Huan-Chiu Tsen","raw_affiliation_strings":["United Microelectronics Corp., Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"United Microelectronics Corp., Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5084942993","display_name":"Lee Chung","orcid":null,"observed_orcids":[]},"institutions":[{"id":"https://openalex.org/I4210161555","display_name":"United Microelectronics (Taiwan)","ror":"https://ror.org/0580qje17","country_code":"TW","type":"company","lineage":["https://openalex.org/I4210161555"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Lee Chung","raw_affiliation_strings":["United Microelectronics Corp., Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"United Microelectronics Corp., Taiwan","institution_ids":["https://openalex.org/I4210161555"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.06950763,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"6921","issue":null,"first_page":"69212N","last_page":"69212N"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.8695999979972839,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11338","display_name":"Advancements in Photolithography Techniques","score":0.8695999979972839,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.09030000120401382,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.03240000084042549,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/finfet","display_name":"FinFET","score":0.9950000047683716},{"id":"https://openalex.org/keywords/polysilicon-gate","display_name":"polysilicon gate","score":0.8270000219345093},{"id":"https://openalex.org/keywords/bhabha-atomic-research-centre","display_name":"BARC","score":0.6480000019073486},{"id":"https://openalex.org/keywords/photoresist","display_name":"photoresist","score":0.6819999814033508},{"id":"https://openalex.org/keywords/plasma-etching","display_name":"plasma etching","score":0.8989999890327454},{"id":"https://openalex.org/keywords/in-situ-etching","display_name":"in situ etching","score":0.7390000224113464},{"id":"https://openalex.org/keywords/nitrided-gate-oxide","display_name":"nitrided gate oxide","score":0.7990000247955322},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"silicon-on-insulator","score":0.9900000095367432},{"id":"https://openalex.org/keywords/endpoint-detection","display_name":"endpoint detection","score":0.8759999871253967},{"id":"https://openalex.org/keywords/buried-oxide-layer","display_name":"buried oxide","score":0.6959999799728394},{"id":"https://openalex.org/keywords/double-gate-mosfet","display_name":"double-gate MOSFET","score":0.6079999804496765}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8090559244155884},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.7537773847579956},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6217878460884094},{"id":"https://openalex.org/C105487726","wikidata":"https://www.wikidata.org/wiki/Q622938","display_name":"Photolithography","level":2,"score":0.5582836866378784},{"id":"https://openalex.org/C130472188","wikidata":"https://www.wikidata.org/wiki/Q1640159","display_name":"Reactive-ion etching","level":4,"score":0.546866238117218},{"id":"https://openalex.org/C134406635","wikidata":"https://www.wikidata.org/wiki/Q1439684","display_name":"Photoresist","level":3,"score":0.5329689979553223},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.511422336101532},{"id":"https://openalex.org/C124634506","wikidata":"https://www.wikidata.org/wiki/Q486936","display_name":"Deep reactive-ion etching","level":5,"score":0.49652916193008423},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.4945652186870575},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.4916437268257141},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.4725762903690338},{"id":"https://openalex.org/C107187091","wikidata":"https://www.wikidata.org/wiki/Q2392011","display_name":"Plasma etching","level":4,"score":0.43949997425079346},{"id":"https://openalex.org/C204223013","wikidata":"https://www.wikidata.org/wiki/Q133036","display_name":"Lithography","level":2,"score":0.43222135305404663},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.42824485898017883},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.4212646484375},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3501971960067749},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.3444315791130066},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.23751670122146606},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.16396445035934448},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.07601308822631836},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1117/12.769591","doi":"https://doi.org/10.1117/12.769591","is_oa":false,"landing_page_url":"https://doi.org/10.1117/12.769591","pdf_url":null,"source":{"id":"https://openalex.org/S183492911","display_name":"Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE","issn_l":"0277-786X","issn":["0277-786X","1996-756X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"listed_in":["cwts-core","norway-1"],"host_organization":"https://openalex.org/P4310315543","host_organization_name":"SPIE","host_organization_lineage":["https://openalex.org/P4310315543"],"host_organization_lineage_names":["SPIE"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"SPIE Proceedings","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"study_designs":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2084742292","https://openalex.org/W2014917073","https://openalex.org/W2085509970","https://openalex.org/W2166475725","https://openalex.org/W2002503531","https://openalex.org/W2066278812","https://openalex.org/W1988948616","https://openalex.org/W2056484401","https://openalex.org/W2131605789","https://openalex.org/W1487623587"],"abstract_inverted_index":{"A":[0,61],"vertical":[1],"double":[2],"gate":[3,11,27,46,142,189],"MOSFET":[4],"(FinFET)":[5],"device":[6,16],"with":[7,198],"an":[8,84,127,186],"ultra-small":[9,75],"poly-Si":[10,45,76,141,145,188],"of":[12,90,166,196],"30nm":[13],"and":[14,55,93,122,125,130,177],"promising":[15],"performances":[17],"has":[18],"been":[19],"successfully":[20,205],"developed":[21],"after":[22,161,175,192],"integrating":[23],"a":[24,34,43,158],"14\u00c5":[25],"nitrided":[26],"oxide":[28,38,98,170],"on":[29],"silicon-on-insulator":[30],"(SOI)":[31],"wafers.":[32],"First,":[33],"500\u00c5-thick":[35],"TEOS":[36,96,131,201],"capping":[37,97,200],"layer":[39,99],"was":[40,71,100,135,204],"deposited":[41],"upon":[42],"1000\u00c5-thick":[44,140],"layer.":[47,173],"Second,":[48],"both":[49,91],"1050\u00c5-thick":[50],"bottom":[51,168],"anti-reflective":[52],"coating":[53],"(BARC)":[54],"2650\u00c5-thick":[56],"photoresist":[57],"(PR)":[58],"were":[59],"coated.":[60],"deep":[62],"ultra-violet":[63],"(DUV)":[64],"193nm":[65],"wavelength":[66],"ASML":[67],"scanner":[68],"lithography":[69],"tool":[70],"used":[72],"for":[73,137],"the":[74,95,110,118,138,153,163,167],"layout":[77],"patterning":[78],"under":[79],"high":[80],"energy":[81],"exposure.":[82],"After":[83],"organic-based":[85],"trimming":[86],"down":[87],"plasma":[88,101,111,120,179],"etching":[89,106,134,146,155,193],"PR":[92,124,176],"BARC,":[94,126],"etched":[102],"in":[103],"another":[104],"oxide-based":[105],"chambers":[107],"without":[108,116],"breaking":[109],"etcher's":[112],"loadlock":[113],"vacuum.":[114],"Then,":[115],"removing":[117],"already":[119],"patterned":[121],"trim-downed":[123],"in-situ":[128],"PR/BARC":[129],"hard":[132,202],"mask":[133,203],"rendered":[136],"final":[139],"electrode.":[143],"The":[144],"can":[147],"be":[148],"automatically":[149],"stopped":[150],"by":[151],"setting":[152],"over-time":[154],"mode":[156],"to":[157],"few":[159],"seconds":[160],"detecting":[162],"endpoint":[164],"signal":[165],"buried":[169],"(BOX)":[171],"insulating":[172],"Finally,":[174],"BARC":[178],"as":[180,182],"well":[181],"additional":[183],"wet":[184],"cleaning,":[185],"ultra-narrow":[187],"electrode,":[190],"i.e.,":[191],"inspection":[194],"(AEI)":[195],"30nm,":[197],"its":[199],"fabricated.":[206]},"counts_by_year":[],"updated_date":"2026-10-30T12:39:25.321706","created_date":"2016-06-24T00:00:00"}